Structure and chemical states of highly eptiaxial CeO2（001） films grown on SrTiO_3 substrate by laser molecular beam epitaxy

Highly epitaxial and pure（001）-oriented CeO2 films were grown on SrTiO3（001） substrates by laser molecular beam epitaxy method without any gas ambient.Layer-by-layer epitaxial growth mode of CeO2 was confirmed by in situ reflection high-energy electron diffraction（RHEED） observations.High-resolution X-ray diffraction（HRXRD） and high-resolution transmission electron microscopy（HRTEM） results indicated the STO（100）//CeO2（100）,STO[100]//CeO2 [110] epitaxial relationship for out-of-plane and in-plane,respectively.The formation mechanism of the epitaxial film was also discussed in the light of a theoretical model.Chemical states of the LMBE ceria films were evaluated and evidences for the existence of Ce3＋and oxygen vacancies were presented.     

Crystal structure,microstructure and magnetic properties of SmCo-based films treated by different annealing methods

Effect of conventional thermal annealing(CTA) and rapid recurrent thermal annealing(RRTA) processes on crystal structure,mi-crostructure,and magnetic properties of the SmCo-based films were investigated.The results indicated that the CTA-treated films exhibited poor permanent magnetic properties,and a low intrinsic coercivity of 72.8 kA/m was observed.Wide hysteresis loop was obtained for the RRTA-treated films,providing better permanent magnetic properties.The intrinsic coercivity reached 312.0 kA/m.According to the X-ray diffraction(XRD) and atomic force microscopy(AFM) results,the magnetic properties of the CTA-treated films and RRTA-treated films were found to be correlated with the crystal structure and microstructure,which were strongly determined by the annealing treatment.CTA treatment led to poor crystallization effects for the films,and a rough surface(RMS=3.47 nm and P-V=35.42 nm) and large grain size of 92.7 nm were observed correspondingly.However,the RRTA treatment exhibited great contributions on the crystallization of the films,which is accountable for the smooth surface(RMS=2.047 nm and P-V=16.43 nm) and fine grain size of 60.8 nm.     

Luminescent Properties of A Novel Terbium Complex Tb（o-BBA）3（phen）

A novel rare earth complex of terbium ion with 2-benzoylbenzoic acid and 1, 10-phenathroline （Tb（o-BBA）3 （phen）, o-BBA-2-benzoylbenzoic acid, phen = 1, 10-phenathroline） was used as an electroluminescent material for the first time. The Tb complex was blended with poly（N-vinylcarbazole） （PVK） in different weight ratios and spinn to coated into films （noted as PVK ：Tb films）. The photoluminescence （PL） properties of films were investigated and the optimum weight ratio between PVK and Tb（o-BBA）3（phen） was found to be 3：1. Monolayer devices with the structure ITO/PVK： Tb/AI were fabricated and emitted green light, which was characteristic of Tb^3＋ emission. The results show that mecha- nisms for PL and EL are different. The PL is considered to be caused because of energy transfer and direct excitation to the Tb（o-BBA）3（phen） molecule, while EL is mainly on charging trapping.     

Investigation of Tribological Behavior of Lanthanum-Based Thin Films Deposited on Sulfonated Self-Assembled Monolayer

3-mercaptopropyl trimethoxysilane （MPTS） was prepared on glass substrate so as to form a two-dimensional self-assembled monolayer （SAM）, and the terminal - SH group in the film was in situ oxidized to - SO3H group to confer good chemisorption ability to the film. Thus, lanthanum-based thin films were deposited on oxidized MPTS-SAM, making use of the chemisorption ability of -SOaH group. Atomic force microscopy （AFM） and X-ray photoelectron spectrometry （XPS） and contact angle measurements were used to characterize the thin films. The tribological properties of the as-prepared thin films sliding against a steel ball were evaluated on a friction and wear tester. Tribological experiment shows that the friction coefficient of glass substrate decreases from 0.8 to 0.08 after the rare earth （RE） self-assembled films （SAMs） are formed on its surface. And the RE self-assembled films have longer wear life （500 sliding passes）. It is demonstrated that RE self-assembled film exhibits good wear-resistant property. The marked decrease in friction and the longer wear life of RE films are attributed to the excellent adhesion of the film to the substrate and to the special characteristics of the RE elements. The frictional behaviors of RE thin-films-coated silicon surface were sensitive to the applied load and the sliding velocity of the steel ball.     

Luminescence Properties of Tb^3＋ -Doped LuAG Films Prepared by Pechini Sol-Gel Method

Lu3Al5O12（LuAG） thin films with different Tb^3＋ concentration were prepared on carefully cleaned （111 ） silicon wafer by a Peehini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 ℃. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 ℃, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb^3＋ doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Th3 ＋ on the luminescent properties were also investigated. For a comparison study, Th^3＋-doped LuAG powders were also prepared by the same sol-gel method.     

Magnetic properties of SmCo-based permanent magnetic films during 25 to 300 ℃

Magnetic properties of the SmCo-based permanent magnetic films prepared on hot substrate with Mo and Cr underlayer without subsequent annealing process were investigated by vibrating sample magnetometer （VSM）, X-ray diffraction （XRD）, and en- ergy dispersive X-ray spectroscopy （EDS）. The results showed that the film thickness of the SmCo-based films presented complex effect on the intrinsic coercivity Hci. Optimal Hc~ for the films with Mo underlayer, Cr underlayer, and without underlayer was ob- served with different film thicknesses. Furthermore, the monotonous temperature dependence of Hci was found to be strongly corre- lated with the magnetic parameters for the 3.0 μm thick SmCo7 films with Mo underlayer. From 25 to 300 ℃, the Hci decreased from 281.6 to 211.2 kA/m with a temperature coefficient of-0.091%/℃, exhibiting good temperature stability.     

Relationship between crystal growth mode,preferred orientation and magnetostriction of （Tb0.3Dy0.7）Fe1.95 alloys

The relationship between crystal growth mode, preferred orientation and magnetostrictive properties of （Tb0.3Dy0.7）Fe1.95 alloys was investigated at different directional solidification rates. The results showed that preferred orientation had a strong influence on the characteristics of （Tb0.3Dy0.7）Fe1.95 alloys. At lower solidification rates, the sample with 〈110〉 preferred orientation showed larger low-field magnetostriction and apparent compressive stress effect. The excessive solidification rate resulted in failure of preferred orientation and a poor magnetostrictive performance. With an increase in solidification rates, the crystal growth modes changed gradually from cellular and primary dendrite morphology to developed dendritic morphology. In addition, domain configurations were observed using magnetic force microscopy, and the change of magnetostrictive properties was interpreted in terms of revealing the domain configurations.     

Effect of oxygen pressure on electrical transport properties for （110） oriented La2/3Sr1/3MnO3 films directly deposited on silicon

La2/3Sr1/3MnO3 films with(110) preferred orientation were deposited on Si(100) substrate without any buffer layer by pulsed laser deposition technique.Effect of oxygen pressure on orientation,surface morphology,and electrical transport properties were investigated.The film deposited at 10 Pa presented(110) preferred orientation with the best crystalline quality,the largest grain size,and the smallest roughness.The(110) oriented film presented higher metal-insulator transition temperature,and the lower resistivity than that of the samples without preferred orientation.     

Influence of bias voltage on structure,mechanical and corrosion properties of reactively sputtered nanocrystalline TiN films

Nanocrystalline TiN films were prepared by DC reactive magnetron sputtering. The influence of substrate biases on structure, mechanical and corrosion properties of the deposited films was studied using X-ray diffraction, field emission scanning electron microscopy, nanoindentation and electrochemical techniques. The deposited films have a columnar structure, and their preferential orientation strongly depends on bias voltage. The preferential orientations change from (200) plane at low bias to (111) plane at moderate bias and then to (220) plane at relatively high bias. Nanohardness H, elastic modulus E, H/E? and H3/E?2 ratios, and corrosion resistance of the deposited films increase first and then decrease with the increase in bias voltage. All the best values appear at bias of －120 V, attributing to the film with a fine, compact and less defective structure. This demonstrates that there is a close relation among microstructure, mechanical and corrosion properties of the TiN films, and the film with the best mechanical property can also provide the most effective corrosion protection．     

Structural and mechanical properties of La_(1/3)NbO_3 and La_(1/3)TaO_3 thin films prepared by chemical solution deposition

In this work, properties of perovskite lanthanum niobate La_(1/3)NbO_3(LN) and tantalate La_(1/3)TaO_3(LT)transparent thin films(~200 nm thickness) prepared by chemical solution deposition on Pt/SiO_2/Si substrates were described. The precursors and films were analyzed using FTIR and XPS spectra, XRD and SEM imaging. The both films after annealing at 1100 ℃ contained perovskite phase with a small fraction of pyrochlore LaNb_5 O_(14)(in LN). The heterogeneous micro structure of LN film was composed from spherical or needle-like particles and homogeneous LT film that resulted in significant changes of their mechanical properties. The elastic modulus and hardness of these films were characterized for the first time by conventional and continuous stiffness(CSM) nanoindentation. The LT film modulus(E) and hardness(H) were higher(~105.7 and 5.3 GPa) than LN(~91.5 and 3.8 GPa). The effect of microstructure on mechanical properties is significant. In addition, the average Derjaguin-Muller-Toporov(DMT)-based elastic modulus of LN film surface were estimated ~50 GPa using AFM PeakForce QNM elastic mapping. The findings presented here can contribute to the fabrication of LN and LT films for the application to electrolytic thin film devices.     

Microstructure and Properties of La_(0.7)Sr_(0.3)MnO_3 Films Deposited on LaAlO_3 (100), (110), and (111) Substrates

Recently , doped perovskite manganite has kin-dled a renewed interest because they exhibit a varietyof unique magnetic and electronic behaviors such ascolossal magnetoresistance (CMR) ,percolative phaseseparation,and spin/charge/orbital ordering[1 ~3].Theemphasis of both theoretical and experi mental studiesof doped materials has beenthe effect of CMRbecauseit can be usedfor potential applicationin magnetic de-vices .As a member of the CMR materials ,La0 .7Sr0 .3MnO3(LSMO) possesses the …     

Preparation and Electrorheological Property of Y4O（OH）9（NO3）-NH4NO3 Materials

The new electrorheological (ER) material, a particle material composed of Y4O(OH)9(NO3) and NH4NO3, was obtained.They display better ER performance.The shear stress of the suspension of Y4O(OH)9(NO3)(NH4NO3)2.8 material in dimethyl silicone oil reaches 1469 Pa at an electric field strength (E) of 4.2 kV·mm-1 and the shear rate (γ) of 150 s-1.The relative shear stress, τE/τ0 (τE and τ0 are the shear stresses at E=4.2 and 0 kV·mm-1, respectively), is up to 29, which is 19 times that of pure Y2O3 material.The dielectric and conductive property of the materials play important roles in the modification of the ER effect of the particle materials.The researches on these new ER materials are very useful for obtaining a better understanding on the mechanism of the ER effect and finding an ideal ER material.     

Nanoscratch behaviors of La0.7Sr0.3MnO3＋δ thin films

The nanoscratch behaviors of La0.7Sr0.3MnO3＋δ films, which were deposited with ratio of O2/（O2＋Ar）, ranging from 4.4% to 45.6% by DC magnetron sputter, were investigated by a nanoindentation technique. The results indicated that the friction coefficient between the films and the diamond tip depended on the loading critical load. The friction coefficient was about 0.08-0.12 when the loading normal load was less than the loading critical load. The films displayed excellent elastic recovery after unloading. When the loading load was larger than the loading critical load, plastic deformation and ploughing appeared for the films. The friction coefficient was about 0.43 when the film was damaged completely. The suitable decrease in ratio of O2/（O2＋Ar） could improve the nanoscratch resistance of the films. The film deposited with O2/（O2＋Ar）=25% possessed better scratch resistance due to good elastic recovery, high nanohardness, and critical load. The loading critical load of the film was larger than 80 raN.     

Electrical Transport and Giant Magnetoresistance in （ 1 - x ） La0.67 Ca0.33 MnO3/x CuO Composites

Samples with nominal composition of （1 - x）La0.67Ca0.33MnO3 （LCMO）/xCuO （x = 0%, 2%, 4% and 20% ） were made using a special experimental method. The temperature dependence of the resistivity （ρ） of the composites was investigated in the temperature range of 10 - 300 K and different magnetic fields of H = 0, 0.1, 0.3, 0.5, 1.0 and 3.0 T. The results showed that CuO percentage x had important effects on metal-insulator transition temperature （Tp）, zero field peak resistivity （ρmax）, and magnetoresistance （MR） properties of the composites. Tp shifted sharply towards low temperature with the increase of x in the range of x ≤4%, but was almost independent of x at high level of CuO content. Composites with x = 4 % and 20 % exhibited similar electrical transmission behavior. Compared with pure LCMO, enhanced magnetoresistance could be clearly observed even in a quite low magnetic field of 0.3 T. For x =4% and 20% samples, the MR value at 0.3 T could reach as high as - 88% and - 90%, respectively. XRD and SEM analysis showed that the substantial enhancement of MR, especially near Tp, was because of local spin disorder between contiguous LCMO ferromagnetic particles caused by the addition of CuO.     

Transport Property of La0.67-xSmxSr0.33MnO3 at Heavy Samarium Doping （0.40≤x≤0.60）

The influence of heavy samarion （Sm） doping （0.40≤x≤0.60） on magnetic and electric properties of La0.67-xSmxSr0.33MnO3 was investigated by measuring the magnetization-temperature （M - T） curves, magnetization-magnetic density （ M - H） curves, resistivity-temperature （ρ- T） curves and magnetoresistivity-temperature （ MR - T） curves of the samples under different temperatures. It is found that, form from long-range ferromagnetic order to spin-cluster glass with the increase of Sm doping amount, the samples transstate and anti-ferromagnetic state; and when x = 0.60, the transport property becomes abnormal under magnetic background; and the magnetic structure changes and extra magnetic coupling induced by doping leads to colossal magnetoresistance effect. The transport mechanism of metallic conduction at low temperature is mainly electron-magneton interaction and can be fitted by the formula ρ = ρ0 ＋ AT^4.5, and the insulatorlike transport mechanism on high temperature range is mainly the function of variable-range hopping and can be fitted by the formula ρ = ρ0exp（T0/T）^1/4. In the formulas above, p is resistivity, T is temperature, and A, ρ0, T0 are constants.     

Phase control of magnetron sputtering deposited Gd2O3 thin films as high-κ gate dielectrics

Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si（001） substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570 ℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density （JL） of 10-5 A/cm^2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570 ℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.     

Paramagnetic Anisotropy of CdGd2（WO4） 4-δ Single Crystal

CdGd2 （WO4）4 -δ single crystal was grown using the Czochralski＇s method. The crystal structure was tetragonal seheelite with lattice parameters a = b = 0.5203 nm and c = 1. 1359 nm. There were vacancies of （WO4）^2- , therefore, there were some Gd^2＋ ions. Langevin paramagnetism and anisotropy were observed from the δ-T curves at room temperature. The susceptibility X//was 3.5018×10^-3, and X⊥ was 3.4403× 10^-2. The anisotropy was also observed in the electron spin resonance （ESR） experiments. The anisotropic Land6 factors were g//= 2. 1333 and g~ = 2. 8411. The direction of easy magnetization was in the α-b plane. Anisotropic paramagnetic Curie constants C//and C⊥ were not only related to macroscopic a that was observed through the experiment, but were also related to J⊥ and J//, which were the microscopic quantum numbers of the Gd^2＋ and Gd^3｜ ions. Based on the detailed analyses, the proportion of 36.8% of Gd^3＋ ions to 63.2% of Gd^2＋ ions in the Gd ions of the CdGd2（WO4）4-δ crystal was calculated, and δ was 0.638 in the single crystal.     

Magnetic and electric characteristics and abnormality of low-temperature resistivity in La0.67-xErxSr0.33MnO3(0.00≤x≤0.20) system

M-T curves, p-T curves, and MR-T curves of La0.67-xErxSr0.33MnO3 (x=0.00, 0.10, 0.20) system were studied by experiments. The experiments showed that: with increasing the doping amount, the magnetic structure of the system transformed from long-range ferromag-netic ordering to spin-cluster glass state, and M-T curves bent up in the extremely low temperature range; the resistivity of the system in-creased with increasing doping amount and exhibited the minimum phenomenon of low-temperature resistivity. The variation of the mag-netic and electric properties came from the extra magnetic coupling induced by the doping and from the Kondo effect induced by the lattice distortion and local magnetic moments which was similar to that induced by the mattering of magnetic impurities on electron spins.     

Preparation of Lanthanum Nickel Oxide-Coated Ni Sheet Anodes and Their Application to Electrolytic Production of (CF3)3N in (CH3)4NF·4.0HF Melt

A new process for electrolytic production of a perfluorinated compound, (CF₃)₃N, using lanthanum nickel oxide-coated Ni sheet anode in the (CH₃)₄NF·4.0HF melt at room temperature, was developed. Thin films of the lanthanum nickel oxides were prepared on Ni sheets by sol-gel coating method using polyvinlylpyrrolidone(PVP). The main components of the thin films were La₂O₃, LaNiO₃, and La₂NiO₄ at 500, 750 and 1000 °C, respectively. The anode performance in the (CH₃)₄NF·4.0HF melt depends greatly on the main component of the thin film, and the LaNiO₃-coated Ni sheet anode gives the best anode performance. The potential of LaNiO₃-coated Ni sheet anode remains constant at 5.9 V during electrolysis at 20 mA·cm⁻² in the (CH₃)4NF·4.0HF melt for 100 h. This is because LaNiO₃ and NiF₃, and/or Ni₂F₅, the latter of which was formed during electrolysis, in the film give a high electronic conductivity to the surface film during electrolysis. The maximum mole fraction of (CF₃)₃N (21.4%) was obtained at 20 mA·cm⁻² in (CH₃)₄NF·4.0HF melt using the LaNiO₃-coated Ni sheet.