Electrical characteristics of Al/polyindole Schottky barrier diodes. I. Temperature dependence

In this study, the forward and reverse bias current–voltage (I–V), capacitance–voltage (C–V), and conductance–voltage (G/ω–V) characteristics of Al/polyindole (Al/PIN) Schottky barrier diodes (SBDs) were studied over a wide temperature range of 140–400 K. Zero‐bias barrier height Φ_B0(I–V), ideality factor (n), ac electrical conductivity (σ_ac), and activation energy (E_a), determined by using thermionic emission (TE) theory, were shown fairly large temperature dispersion especially at lower temperatures due to surface states and series resistance of Al/PIN SBD. I–V characteristics of the Al/PIN SBDs showed an almost rectification behavior, but the reverse bias saturation current (I₀) and n were observed to be high. This high value of n has been attributed to the particular distribution of barrier heights due to barrier height inhomogeneities and interface states that present at the Al/PIN interface. The conductivity data obtained from G/ωV measurements over a wide temperature range were fitted to the Arrhenius and Mott equations and observed linear behaviors for σ_ac vs. 1/T and ln σ_ac vs. 1/T^1/4 graphs, respectively. The Mott parameters of T₀ and K₀ values were determined from the slope and intercept of the straight line as 3.8 × 10⁷ and 1.08 × 10⁷ Scm^?1K^1/2, respectively. Assuming a value of 6 × 10¹² s^?1 for ν₀, the decay length α^?1 and the density states at the Fermi energy level, N(E_F) are estimated to be 8.74 Å and 1.27 × 10²⁰ eV^?1cm^?3, respectively. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

Inhomogeneous Structure and Magnetic Properties of Aurivillius Ceramics Bi4Bin−3Ti3Fen−3O3n+3

Structures of Aurivillius ceramics Bi₄Bi_n ? 3Ti₃Fe_n ? 3O_3n+3 with n = 3–9 have been investigated by X‐ray powder diffraction and high‐resolution transmission electron microscopy. The Aurivillius ceramics Bi₄Bi_n?3Ti₃Fe_n?3O_3n+3 with n = 3–5 exhibit homogeneous layered structure. However, the ceramic samples with n = 6–9 are composed of mixed Aurivillius phases with different layer numbers, in which the stacking faults of the disordered intergrowth of different n‐layered perovskite blocks and the so‐called “side‐stepping” of the (Bi₂O₂)²⁺ layers are generally observed. Magnetic measurements indicate that Fe cations couple antiferromagnetically and the inhomogeneity of composition exists in the samples. The magnetic properties are obviously influenced by the inhomogeneous structure and composition.     

Distribution of interface traps in Au/2% GC-doped Ca3Co4Ga0.001Ox/n-Si structures

This study presents voltage-dependent profile of interface traps in Au/n-Si structure with 2% graphene–cobalt-doped Ca₃Co₄Ga_0.001O_x interfacial layer. Admittance measurements revealed capacitance-voltage (C-V) plots with typical regions of a metal–insulator–semiconductor structure through inversion, depletion, and accumulation regions. Frequency dispersion is observed in C-V plots and such behavior was explained with excess capacitance, which is associated with the density of interface traps (D_it) in the structure because larger D_it is observed when the measurements are held at low frequencies due to the fact that traps can follow the signal depending on their lifetime. D_it was also obtained using conductance method, which also provided lifetime of the traps. The difference between the values of D_it was attributed to the difference in extraction methods. Obtained results showed that Au/2% graphene–cobalt-doped Ca₃Co₄Ga_0.001O_x/n-Si structure yields promising electrical characteristics when the structure is operated at high frequencies. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020 , 137, 48399.     

High Dielectric Constant ZrO<Subscript>2</Subscript> Films by Atomic Layer Deposition Technique on Germanium Substrates

Germanium has been reconsidered as a potential substitute channel material for high-performance MOSFETs due to its intrinsic high mobilities for both electrons (3900 cm² s^-1V^-1) and holes (1900 cm² s^-1V^-1). In the present work we have fabricated Pt/Ti metal bilayered ALD-ZrO ₂/n-Ge based MOS capacitors. The ZrO₂ thin film was deposited on n-Ge (100) substrates by using ZrEMA and oxygen precursors at 300 ^°C in a PEALD system. The Pt/Ti bilayer metallization was carried out using e-beam evaporation and PMA using a RTA system at 350 ^°C in the forming gas. The thickness of the ZrO₂ gate stack was measured to be 3.61 nm using an ellipsometer. The electrical study was done by analyzing capacitance voltage and current voltage measurements. The flat-band shift was found to be 0.22 V, Q_eff was 3.55×10¹² cm^-2 and D_it was 8.53×10¹² cm^-2 eV^-1. Current voltage characteristics have been analyzed to know the conduction mechanism in fabricated MOS devices.     

The Analysis of the Electrical and Photovoltaic Properties of Cr/p-Si Structures Using Current-Voltage Measurements

In this work, the electrical and photovoltaic properties of Cr/p -Si structures were investigated using forward and reverse bias current-voltage (I - V ) measurements in dark and under illumination conditions (100 mW/cm²) at room temperature. The forward and reverse bias current–voltage (I - V ) characteristics of the Cr/p-Si structures were analyzed by the thermionic emission theory. For this, the main parameters such as ideality factors (n), barrier heights (Φ_bo), series resistances (R_S), and reverse-saturation currents obtained from different methods using forward and reverse bias I - V measurements were investigated in under dark and illumination conditions at room temperature, respectively. Furthermore, the photovoltaic parameters such as short circuit current (I_sc), open circuit voltage (V _oc), fill factor (FF) and conversion efficiency (η_P) were acquired as 7.43 × 10^-3 A/cm², 0.260 V, 61.5% and 1.18% under 100 mW/cm² light intensity, respectively, and these values are near to a photodiode. Experimental results show that all electrical parameters were found to be strong function of illumination density. Also, this result confirms that Cr/p-type-Si diode can be used as a photodiode in optoelectronic applications.

     

Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

In this work, we study the impact of random interface traps (RITs) at the interface of SiO _x /Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number on the degradation of electrical characteristics are clarified with respect to different levels of RIT density of state (D_it). The variability of the off-state current (I_off) and drain-induced barrier lowering (DIBL) will be severely affected by RITs with high D_it varying from 5 × 10¹² to 5 × 10¹³ eV⁻¹ cm⁻² owing to significant threshold voltage (V_th) fluctuation. The results of this study indicate that if the level of D_it is lower than 1 × 10¹² eV⁻¹ cm⁻², the normalized variability of the on-state current, I_off, V_th, DIBL, and subthreshold swing is within 5%.     

Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer‐based heterojunction diode

In this study, thickness‐dependent current density–voltage (J–V) characteristics obtained for poly{(9,9‐dioctylfluorene)?2,7‐diyl‐(4,7‐bis(thien‐2‐yl) 2‐dodecyl‐benzo[1,2,3] triazole)} (PFTBT) conjugated copolymer based heterojunction diode fabricated on ITO were investigated in terms of electrical characteristics. In order to analyze J –V plots with ITO/PEDOT:PSS/PFTBT:PC₆₁BM/LiF/Al configuration, the thickness‐dependent J–V measurements were applied in the thickness range between 90 and 200 nm. The effect of PFTBT:PC₆₁BM layer thickness on the forward J –V characteristics were investigated by evaluating electrical parameters such as zero bias barrier height (Φ_Bo), ideality factor (n ), shunt resistance (R _sh), series resistance (R_s ), the interface states density (N _ss), and space‐charge limited mobility. The results show that at PFTBT:PC₆₁BM layer thickness of 90 and 200 nm, ideality factor for ITO/PEDOT:PSS/PFTBT:PC₆₁BM/LiF/Al heterojunction diodes ranged from 2.726 to 3.121 and the thermionic emission over the heterojunction diodes is crucial at low current densities and the intrinsic thermally generated charge carriers controlled the forward current this region of the heterojunction diode. At relatively higher voltage, the current mechanism of ITO/PFTBT:PC₆₁BM/PEDOT:PSS/LiF/Al heterojunction diodes were found to obey a space charge limited (SCLC) conduction mechanism. The values of N_ss and R_s in heterojunction diodes increase with increasing PFTBT:PC₆₁BM layer thickness and effect the main electrical parameters of diodes. In addition, the leakage current of heterojunction diodes are taken and interpreted via Poole‐Frenkel emission and Schottky emission. The leakage current was controlled in ITO/PEDOT:PSS/PFTBT:PC₆₁BM/LiF/Al heterojunction diodes by Poole‐Frenkel emission above 140 nm and by Schottky emission under 140 nm. © 2017 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2017 , 134 , 44817.     

Capture of submicrometer particles in a pressurized electrostatic precipitator

This study investigated the influence of gas pressure on the submicrometer particle capture performance of an electrostatic precipitator (ESP). Current-voltage characteristics and particle capture performance of the ESP were studied in air and in simulated flue gas (SFG) under 1, 2, and 3 atm. Using negative corona and air as the feed gas, the penetration of most particles of 40–400 nm in diameter decreased from 8 × 10^?4 ? 2 × 10^?2 to 2 × 10^?4 ? 1 × 10^?2 as pressure increased from 1 atm to 3 atm at constant current; and increased from 3 × 10^?5 ? 1 × 10^?3 to 2 × 10^?4 ? 1 × 10^?2 as pressure was elevated when the voltage was held roughly constant. Similar type of disparity under different pressures was also observed for positive corona and for SFG. Experiments set up to capture fly ash in the ESP showed that with constant current, higher pressure resulted in a higher initial charge fraction of the particles from the furnace, which could facilitate the penetration of fly ash particles. A semiempirical model was developed based on the Deutsch–Anderson equation and experimental data under 1, 2, and 3 atm to calculate the particle penetrations under high pressure. The total charge number on a particle (n') is calculated by incorporating the effects of current (I) and pressure (P) on relative weights of the diffusion charging number (n_diff) and field charging number (n_field), that is, n' = B₁(I,P)n_diff + B₂(I,P)n_field, where B₁(I,P) and B₂(I,P) are both empirical coefficients dependent on current and pressure. Experimental penetrations under 1.5 and 2.5 atm validated this model over the particle diameter range in 100–400 nm.

Copyright © 2016 American Association for Aerosol Research     

Quasi-Solid Polymer Electrolyte Composed of poly(1-vinylpyrrolidone-co-vinyl acetate) Copolymer and the Influence of Its Composition on Electrochemical Properties and the Performances of Dye-Sensitized Solar Cells

Poly(1-vinylpyrrolidone-co-vinyl acetate)-based quasi-solid polymer electrolytes doped with potassium iodide are prepared. The highest room temperature ionic conductivity of 1.72 mS?cm^?1 is obtained. The dielectric studies are performed to understand the ion conduction mechanism. Fourier transform infrared study has been performed to understand complexation of the poly(1-vinylpyrrolidone-co-vinyl acetate)-based quasi-solid polymer electrolytes. The best power energy conversion efficiency (η) obtained is 2.94% with short circuit current density (J_sc) of 8.05?mA?cm^?2, open circuit voltage (V_oc) of 0.58?V, and fill factor of 63% under standard light intensity of 100?mW?cm^?2 irradiation.     

Radical polymerization of n‐butyl methacrylate initiated by stibonium ylide

1,2,3,4‐Tetraphenylcyclopentadiene triphenyl stibonium ylide initiated radical polymerization of n‐butyl methacrylate (n‐BMA) in dioxane at (60 ± 0.2)°C for 90 min under nitrogen atmosphere has been carried out. The system follows nonideal kinetics, i.e., R_p α [ylide]^0.2 [n‐BMA]^1.8. The value of k/k_t and overall energy of activation have been computed as 0.133 × 10^?2 L mol^?1 s^?1, 33 kJ/mol, respectively. The FTIR spectrum shows a band at 1745 cm^?1 due to acrylate group of n‐BMA. The ¹H NMR spectrum shows a peak of two magnetically equivalent protons of methylene group at 2.1 δ ppm. The DSC curve shows glass transition temperature (T_g) as 41°C. The presence of six hyperfine lines in ESR spectrum indicates that the system follows free radical polymerization and the initiation is brought about by phenyl radical. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 103: 2457–2463, 2007     

Electrical properties of diphenyldiacetylene annealed under elevated pressure

A unique class of conjugated compounds composed of the derivative of condensed polycyclic aromatic compound with the phenyl group and diphenyldiacetylene oligomer was synthesized by annealing of diphenyldiacetylene under elevated pressure. The effect of annealing pressure on the conductivity of the compounds was studied. The total conductivity of the compound decreased with a decrease of frequency, approaching a constant value (dc conductivity: C_dc). The dc conductivity of the compound increased from below 10^?15 to 10 S cm^?1 with increasing annealing pressure. The dc conductivity of the oligomer was below 10^?15 S cm^?1 and that of the derivative increased from 10^?8 to 10 S cm^?1 with decreasing H/C (H/C:0.45–0.04). The conduction of the conjugated compound was electronic. The temperature coefficient of those dc conductivities was positive, with an approximately linear relation between In (C_dcT^0.5) and (1/T)^0.25, where T is the temperature. The ac conductivities C_ac were proportional to temperature and frequency f and had the following equation C_ac = Tf^S, S = 0.67–0.75. These results showed that the conduction mechanism can be explained by the hopping in a manifold of states at the Fermi level. © 1994 John Wiley & Sons, Inc.     

Influence of monomeric and polymeric structure on the physical properties of thermoplastic polyesters derived from hydroxy fatty acids

The physical properties of three vegetable oil derived medium and long chain poly(ω‐hydroxy fatty ester)s (P(Me‐ω‐OHFA)s), namely poly(ω‐hydroxynonanoate) [P(Me‐ω‐OHC9)], poly(ω‐hydroxytridecanoate) [P(Me‐ω‐OHC13)] and poly(ω‐hydroxyoctadecanoate) [P(Me‐ω‐OHC18)] (n = 8, 12 and 17, respectively), of the [?(CH₂)_n?COO–]_x polyester homologous series are presented. The effect of M_n (M_n 10–40 kg mol^?1) and n on the crystal structure and thermal and mechanical properties of the P(Me‐ω‐OHFA)s were investigated by wide‐angle X‐ray diffraction (WAXD), TGA, DSC, dynamic mechanical analysis (DMA) and tensile analysis and are discussed in the context of the [?(CH₂)_n?COO–]_x polyester homologous series, contrasted with linear polyethylene (PE). For all P(Me‐ω‐OHFA)s the WAXD data indicated an orthorhombic crystal phase reminiscent of linear PE with crystallinity (X_c = 50%?80%) depending strongly on M_n. The glass transition temperature and Young's modulus for P(Me‐ω‐OHFA)s increased with X_c. The DSC, DMA and TGA studies for P(Me‐ω‐OHFA)s (n = 8, 12 and 17) indicated strong correlations between the melting, glass transition and thermal degradation behavior and n. The established predictive structure relationships can be used for the custom engineering of polyester materials suitable for specialty and commodity applications. © 2014 Society of Chemical Industry     

Synthesis,Surface and Antimicrobial Activities of Novel Cationic Gemini Surfactants

A series of novel cationic gemini surfactants [C_nH_2n+1–O–CH₂–CH(OH)–CH₂–N⁺(CH₃)₂–(CH₂)₂]₂·2Br^? [ 3a (n = 12), 3b (n = 14) and 3c (n = 16)] having a 2‐hydroxy‐1,3‐oxypropylene group [?CH₂–CH(OH)–CH₂–O–] in the hydrophobic chain have been synthesized and characterized. Their water solubility, surface activity, foaming properties, and antibacterial activity have been examined. The critical micelle concentration (CMC) values of the novel cationic gemini surfactants are one to two orders of magnitude smaller than those of the corresponding monomeric surfactants. Furthermore, the novel cationic gemini surfactants have better water solubility and surface activity than the comparable [C_nH_2n+1–N⁺(CH₃)₂–(CH₂)₂]₂·2Br^? (n‐4‐n) geminis. The novel cationic gemini surfactants 3a and 3b also exhibit good foaming properties and show good antibacterial and antifungal activities.     

Investigations on Material and Mechanical Properties,Air‐Permeation Behavior and Filtration Performance of Mullite‐Bonded Porous SiC Ceramics

A theoretical relation between processing parameters and porosity (29–56%) of mullite‐bonded porous SiC ceramics was derived and validated with experimental data. Porosity‐dependent variation of fracture strength (9–34 MPa) and elastic modulus (7–28 GPa) was explained by the minimum solid area model. At room temperature, the Darcian, k₁ (1.2 × 10^?13–1.6 × 10^?12 m²) and the non‐Darcian, k₂ (4.6 × 10^?9–2.7 × 10^?7 m) permeability coefficients showed linear variation with porosity. Tests conducted up to 650°C indicated an increase in k₁ with temperature and a reverse trend for k₂. Airborne NaCl nanoparticle filtration tests showed good performance of SiC ceramics with fractional collection efficiency of >99% at 46–56% porosity levels.     

Structure and electrical properties of grafted polypropylene/graphite nanocomposites prepared by solution intercalation

A novel process was developed to prepare electrically conducting maleic anhydride grafted polypropylene (gPP)/expanded graphite (EG) nanocomposites by solution intercalation. The conducting percolation threshold at room temperature (Φ_c) of the nanocomposites was 0.67 vol %, much lower than that of the conventional conducting composites prepared by melt mixing (Φ_c = 2.96 vol %). When the EG content was 3.90 vol %, the electrical conductivity (σ) of the former reached 2.49 × 10^?3 S/cm, whereas the σ of the latter was only 6.85 × 10^?9 S/cm. The TEM, SEM, and optical microscopy observations confirmed that the significant decrease of Φ_c and the striking increase of σ might be attributable to the formation of an EG/gPP conducting multiple network in the nanocomposites, involving the network composed of particles with a large surface‐to‐volume ratio and several hundred micrometers in size, and the networks composed of the boards or sheets of graphite with high width‐to‐thickness ratio and particles of fine microscale or nanoscale sizes. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 88: 1864–1869, 2003     

Influence of Annealing Temperature on Structural and dc Electrical Properties of SnO2 Thin Films for Schottky Barrier Diodes

This paper reports about the influence of annealing temperature on the structural, morphological, optical and electrical properties of SnO₂ thin films prepared by the spin-coating method. The structural analysis reveals the presence of rutile SnO₂ with tetragonal structure and its defects are reduced in higher annealing temperatures. SEM images show that the size of the grains was improved due to increase in annealing temperature. From UV-visible analysis, band gap energy (E_g), refractive index (n), and extinction coefficient (k) are estimated. The band gap energy increases from 3.46 to 3.54 eV with annealing temperatures. dc analysis shows that the Arrhenius conduction mechanism has a profound influence on the electrical conductivity and varies in the range 1.08–6.80 × 10^− 8(Ω cm)^− 1 with annealing temperature. The Al/n-SnO₂/p-Si Schottky barrier diode parameters such as ideality factor (n), barrier height (4Φ_B), leakage current (I₀) and series resistance (R_s) were studied by the I-V method as a function of annealing temperature as per the Thermionic Emission method (TE). The barrier height varies from 0.84 to 0.73 eV and the device ideality has improved at higher annealing temperature.

     

Structural characterization and thermal behaviour of block copolymers of polydimethylsiloxane and polyamide having trichlorogermyl pendant groups

Block copolymers having a pendant trichlorogermyl group as a part of polyamide segment? (CO? R′? CO? NH? Ar? NH? )_xCO? R′? CO? and polydimethylsiloxane of general formula [(? CO? R′? CO? HN? Ar? NH)_x? CO? R′? CO? NH(CH₂)₃SiO(CH₃)₂ ((CH₃)₂SiO)_ySi(CH₃)₂(CH₂)₃ NH? ]_n (where R′ = CH₂CH(GeCl₃), CH(CH₃)CH(GeCl₃), CH(GeCl₃)CH(CH₃); Ar = C₆H₄, (? C₆H₃? CH₃)₂, (? C₆H₃? OCH₃)₂, 2,5‐(CH₃)₂? C₆H₂, C₆H₄? O? C₆H₄) were prepared by a polycondensation reaction and characterized using CHN and Ge analysis, Fourier transform infrared (FTIR) and ¹H NMR spectroscopy, thermogravimetric analysis (TGA) and molecular weight determination. They have a lamellar structure with weight‐average molecular weight in the range 1.21 × 10⁵–4.79 × 10⁵ g mol^?1. These copolymers display two glass transition temperatures and have an average decomposition temperature of 489 °C. TGA, FTIR and gas chromatography/mass spectrometry studies indicate that degradation of these block copolymers results in carbon monoxide, oligomeric siloxanes and polyamide fragments. They are thermally stable due to the hydrogen bonded interlinked chains of polyamide, while they absorb water due to the presence of Ge? Cl bonding. Copyright © 2010 Society of Chemical Industry     

Synthesis and hydrothermal stability of U doped zirconolite–sphene composite materials

Two series of U doped zirconolite–sphene composite materials were prepared by solid state reaction method: CaZr_(1?m)U_mTi₂O₇?(1?m) Ca_(1?x)U_xAl_2xTi_(1?2x)SiO₅ (m?=?7x) and Ca_(1?n)U_6nZr_(1?5n)Al_2nTi_(2?2n)O₇?(1?5n) Ca_(1?y)U_yAl_2yTi_(1?2y)SiO₅ (n?=?5y/6). The effects of U content on the phase structure of the composite materials were mainly investigated. The results show that the optimal synthesis temperature of the composite material is ～1230°C. In comparison with the incorporation of U in the Zr site of zirconolite, U incorporation in the Ca site of zirconolite using Al as charge compensating ions was not very efficient. Hydrothermal stability of the U doped zirconolite–sphene composite material was examined by modified product consistency test method at 90°C in deionised water (pH 7). The normalised U leach rate is fairly constant in a low value below 10^?5 g m^?2 day^?1 after 28 days.     

Synergistic Extraction of U(VI), Th(IV), and Lanthanides(III) from Nitric Acid Solutions Using Mixtures of TODGA and Dinonylnaphthalene Sulfonic Acid

The extraction of U(VI), Th(IV), and lanthanides(III) from aqueous nitric acid solutions with mixtures of N,N,N′,N′-tetra(n-octyl)diglycolamide (TODGA) and dinonylnaphtalene sulfonic acid (HDNNS) in n-decane has been investigated. The extraction efficiency of U(VI), Th(IV), and Ln(III) ions is greatly enhanced by addition of HDNNS to an organic phase containing TODGA. The synergistic effect arises from the higher hydrophobicity of U(VI), Th(IV), and Ln(III) extracted species formed by TODGA and DNNS^? anions as compared to those formed by TODGA and NO₃^? ions as counter anions. The synergistic effect for U(VI), Th(IV), and Ln(III) extraction from aqueous nitric acid solutions with mixtures of TODGA and HDNNS becomes weaker when the acidity of the aqueous phase increases. A high synergistic enhancement is accompanied with a high selectivity of Ln(III) extraction from nitric acid solutions.     

The electrical properties of boron‐containing poly(vinyl alcohol) derived ceramic organic semiconductor

The direct and alternating current conductivity, space charge limited current, and thermoelectrical properties of boron‐containing poly(vinyl alcohol)‐derived ceramic have been investigated. The electrical conductivity of the sample increases with increase in temperature and the room temperature conductivity of the sample was found to be 3.82 × 10^?5 S/cm. The electrical conductivity and thermoelectric power results suggest that the PVAB polymer has p‐type electrical conductivity. The current–voltage characteristics indicate that at higher voltages, the space charge limited conductivity mechanism is dominant in the PVAB sample. The electronic parameters such as the position of the Fermi level bottom of the conduction band, E_F, the density of states in conduction band N_c, effective mass of holes m_s were found to be 0.44 eV, 2.12 × 10²⁵ m^?3, and 0.59 m_o, respectively. Alternating current conductivity results suggest that the correlated barrier hopping conductivity is dominant in AC conductivity mechanism of the sample. The imaginary part of the dielectrical modulus at different temperatures shows a relaxation peak, indicating a temperature‐dependent non‐Debye relaxation. POLYM. ENG. SCI., 2008. © 2008 Society of Plastics Engineers