Dielectric and optical properties of Ni doped Na0.5Bi0.5TiO3

Polycrystalline Ni doped Na_.5Bi_0.5TiO₃ samples (Na_0.5Bi_0.5)Ti_1-xNi_xO_3, (x?=?0.5, 0.10, 0.15) have been prepared by solid state reaction. The appearance of the additional peak in X-ray diffraction pattern indicates the ordering of Ti⁴⁺ and Ni²⁺ ions. Polygonal grains are converted into flakes with an increase of Ni concentration. Replacement of Ti⁴⁺ by Ni²⁺ strongly modifies the relative contribution of two peaks in the Raman bands within 200–400?cm^?1. Oxygen vacancy is observed in X-ray photoelectron spectrum to maintain charge neutrality due to aliovalent doping. Broad diffuse phase transition centered at the dielectric constant maximum indicates relaxor behaviour. Comparison between impedance and electric modulus spectrum suggests non-Debye relaxation. The ac conductivity follows the power law with the frequency exponent lies 0.52???0.72. The generation of holes by divalent Ni dopant at tetravalent Ti sites enhances optical band gap.     

Stable dielectric properties of Na1+xBiTi6O14+0.5x (x = −0.02, − 0.01, 0.01, 0.02) ceramics with low loss and high operating temperature

New lead-free dielectric ceramics, Na_1+xBiTi₆O_14+0.5x (x?=??0.02, ??0.01, 0.01, 0.02), were prepared by the conventional solid-state method. Micro-structural and electrical properties of Na_1+xBiTi₆O_14+0.5x were studied. XRD showed all the samples exhibited a single structured phase. Grains decreased at the beginning, then grew with the increasing x content in SEM. Impedance spectra (IS) analysis evidenced the phenomena that the dielectric permittivity increased firstly, then decreased, while the loss had the opposite trend. Z* plots showed that Na_1+xBiTi₆O_14+0.5x ceramics were a kind of dielectrics. The activation energy (E_a) could be calculated in the range of 1.53–1.65?eV, which indicated they were dielectric ceramics. Na_1+xBiTi₆O_14+0.5x ceramics (x?=?0.01) sintered at 1040?°C showed prominent dielectric properties with a dielectric constant of 25.76, loss of 0.07%, E_a of 1.65?eV, density of 3.463?g/cm³, impedance of 0.532?MΩ?cm, -Z′′_max of 0.1958?MΩ?cm, capacitance of 5.56?pF/cm (600?℃), which were enhanced much compared with other samples. The existence of dielectric properties with high dielectric constant, low dielectric loss and wide operating temperature range makes it possible to develop the ceramics into high-temperature capacitors.     

Composition and poling-induced modulation on photoluminescence properties for NBT-xBT: Pr3+ ceramics

In this work, the modulation of photoluminescence (PL) properties, which was realized by the composition and poling-induced structural evolution, for the Pr³⁺ doped (1-x)(Na_1/2Bi_1/2)TiO₃-xBaTiO₃ (NBT-xBT: Pr³⁺) piezoelectric ceramics was systematically investigated. Based on the Rietveld refinement structural analysis, there were two distinct composition ranges characterized by different structural features for NBT-xBT: Pr³⁺ ceramics at room temperature: (i) rhombohedral R3c + monoclinic Cc phases for the compositions of x ≤ 0.03, and (ii) tetragonal P4bm + monoclinic Cc phases for 0.04 ≤ x ≤ 0.07. It was interesting to notice that the PL emission intensity is positively correlated with the phase fraction of Cc, which is closely related to the crystal symmetry of NBT-xBT: Pr³⁺ ceramics. The compositions with x ≤ 0.06 underwent an irreversible phase transformation on the application of electric field. The dielectric and Raman measurement revealed a transition from a relaxor state to a normal ferroelectric for the x ≤ 0.06 compositions under an applied poling electric field, with not only the reduction in the in-phase octahedral tilting disorder but also the establishment of long-range ordering. These electric field-induced structural changes were responsible for poling-induced PL quenching behaviors as a result of the increased local structure symmetry around doped Pr³⁺ ions in the poled ceramics.     

Structure-property relations of co-doped bismuth layer-structured Bi3.25La0.75(Ti1-xMox)3O12 ceramics

In this work, the fabrication and investigation of substituting higher-valence Mo⁶⁺ for Ti⁴⁺ ion on the B-site of La³⁺-doped Bi₄Ti₃O₁₂ [BLT] structure to form Bi_3.25La_0.75(Ti_1-x Mo _x )₃O₁₂ [BLTM] (when x = 0, 0.01, 0.03, 0.05 0.07, 0.09, and 0.10) ceramics were carried out. X-ray diffraction patterns of BLTM ceramics indicated an orthorhombic structure with lattice distortion, especially with a higher concentration of a MoO₃ dopant. Microstructural investigation showed that all ceramics composed mainly of plate-like grains. An increase in MoO₃ doping content increased the length and thickness of the grain but reduced the density of the ceramics. Electrical conductivity was found to decrease, while the dielectric constant increased with Mo⁶⁺ doping concentration. Ferroelectric properties were found to be improved with increasing MoO₃ content and were optimized at x = 0.1.     

Crystal structure,microwave dielectric properties and low temperature sintering of (Al0.5Nb0.5)4+ co-substitution for Ti4+ of LiNb0.6Ti0.5O3 ceramics

The phase composition, microstructure, microwave dielectric properties of (Al_0.5Nb_0.5)⁴⁺ co-substitution for Ti site in LiNb_0.6Ti_0.5O₃ ceramics and the low temperature sintering behaviors of Li₂O-B₂O₃-SiO₂ (LBS) glass were systematically discussed. XRD patterns and EDS analysis result confirmed that single phase of Li_1.075Nb_0.625Ti_0.45O₃ solid solution was formed in all component. The increase of dielectric constant (ε_r) is ascribed to the improvement of bulk density. The restricted growth of grain has a negative influence on quality factor (Q×f) value. The τ_f value could be continuously shifted to near zero as the doping content increases. Great microwave dielectric properties were obtained in LiNb_0.6Ti_(0.5-x)(Al_0.5Nb_0.5)_xO₃ ceramics (x?=?0.10) when sintered at 1100?℃ for 2?h: ε_r =?70.34, Q×f =?5144?GHz, τ_f =?4.8?ppm/℃. The sintering aid, LBS glass, can effectively reduce the temperature and remain satisfied microwave performance. Excellent microwave dielectric properties for x?=?0.10 were obtained with 1.0?wt% glass: ε_r =?70.16, Q×f =?4153?GHz (at 4?GHz), τ_f =?-0.65?ppm/℃ when sintered at 925?℃ for 2?h.     

Enhanced piezoelectric performance in Na0.5Bi4.5Ti4O15-based bismuth-layered ceramics by Nb/Mn doping modification

In this work, Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y bismuth-layered ferroelectric ceramics were prepared by a solid-state reaction method. The effect of Nb⁵⁺ content on crystal morphology, electrical properties, and piezoelectric performance were systematically investigated. The results show that the introduction of Nb⁵⁺ into Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y ceramics to replace Ti⁴⁺ increases the ratio of b/a lattice parameter, leading to the TiO₆ octahedral distortion and the structural transformation tendency from the orthorhombic to tetragonal phase, which facilitates dipole movements of Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y ceramics. Therefore, the ferroelectric properties of Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y ceramics are improved, and an enhanced piezoelectric coefficient of 30 pC/N combining great temperature stability with d₃₃ value higher than 25 pC/N in the temperature range of 25°C–450°C has been realized in Na_0.5Bi_4.5Ti_3.94–xMn_0.06Nb_xO_15+y ceramics with x = 0.08 mol. Our work provides a good model for designing lead-free ultrahigh Curie temperature piezoelectric devices that can be practically applied in extremely harsh environments.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.     

Evolution of microstructure and electrical properties of Aurivillius phase (CaBi4Ti4O15)1-x(Bi4Ti3O12)x ceramics

(CaBi₄Ti₄O₁₅)_1-x(Bi₄Ti₃O₁₂)_x (CBT-xBIT) Aurivillius phase ceramics were synthesized by the conventional solid reaction method. The evolution of the structure and the electrical properties of CBT-xBIT ceramics were systematically investigated. Due to the enhanced spontaneous polarization induced by internal stresses on the Bi₂O₂ layers in the CBT-xBIT structure, the optimal piezoelectric coefficient (d₃₃ ~ 13?pC/N) was obtained in the ceramics with x?=?0.3 while exhibiting a relatively good thermal stability in the temperature range of 20–700?°C. The dc resistivity (ρ_dc) of the CBT-xBIT ceramics exhibited a higher value (≥?10⁹ Ω?cm) at room temperature, and the tan δ value of CBT-xBIT (x= 0, 0.1 and 0.3) within the temperature range of 20–500?°C maintained stability as a result of the domain structure and point defect concentration in the ceramics. In addition, a distinctive double dielectric peak anomaly was observed in the ε_r-T curves of the CBT-xBIT (x= 0.3, 0.5 and 0.7) ceramics, and it plays a remarkable role in the thermal stability of the piezoelectricity of CBT-xBIT ceramics. As a result, such research can benefit high temperature practical piezoelectric devices.     

Dielectric temperature stability of Nb-modified Bi0.5(Na0.78K0.22)0.5TiO3 lead-free ceramics

In this study, the phase structure, microstructure and dielectric properties of Bi_0.5(Na_0.78K_0.22)_0.5(Ti_1-xNb_x)O₃ lead-free ceramics prepared by traditional solid phase sintering method were studied. The second phase pyrochlore bismuth titanate (Bi₂Ti₂O₇) was produced in the system after introduction of Nb⁵⁺. The dielectric constant of the sample (x = 0.03) sintered at 1130 °C at room temperature reached a maximum of 1841, and the dielectric loss was 0.045 minimum. It had been found that the K⁺ and Nb⁵⁺ co-doped Bi_0.5Na_0.5TiO₃ (BNT) lead-free ceramics exhibited outstanding dielectric-temperature stability within 100–400 °C with T_cc ≤±15%. Result of this research provides a valuable reference for application of BNT based capacitors in high temperature field.     

Influences of phase transition and microstructure on dielectric properties of Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>Zr<Subscript>1-x</Subscript>Ti<Subscript>x</Subscript>O<Subscript>3</Subscript> ceramics

Bismuth sodium zirconate titanate ceramics with the formula Bi_0.5Na_0.5Zr_1-xTi_xO₃ [BNZT], where x = 0.3, 0.4, 0.5, and 0.6, were prepared by a conventional solid-state sintering method. Phase identification was investigated using an X-ray diffraction technique. All compositions exhibited complete solubility of Ti⁴⁺ at the Zr⁴⁺ site. Both a decrease of unit cell size and phase transition from an orthorhombic Zr-rich composition to a rhombohedral crystal structure in a Ti-rich composition were observed as a result of Ti⁴⁺ substitution. These changes caused dielectric properties of BNZT ceramics to enhance. Microstructural observation carried out employing SEM showed that average grain size decreased when addition of Ti increased. Grain size difference of BNZT above 0.4 mole fraction of Ti⁴⁺ displayed a significant increase of dielectric constant at room temperature.     

High energy storage performance of [(Bi0.5Na0.5)0.94Ba0.06]0.97La0.03Ti1-x(Al0.5Nb0.5)xO3 ceramics with enhanced dielectric breakdown strength

Novel lead-free [(Bi_0.5Na_0.5)_0.94Ba_0.06]_0.97La_0.03Ti_1-x(Al_0.5Nb_0.5)_xO₃ ceramics (BNBLT-xAN) were prepared by the conventional solid state sintering method. The dielectric, ferroelectric, ac impedance and energy-storage performance were systematically investigated. Temperature dependent permittivity curves showed that relaxation properties of sintered ceramics gradually diminished with the increase of AN. The introduction of AN gave rise to a slimmer polarization hysteresis loop (P-E) and an enhanced dielectric breakdown strength (DBS). Therefore, the optimum energy-storage performance were realized at x?=?0.05 with the energy-storage density (W_rec) of 1.72?J/cm³ and energy-storage efficiency (η) of 85.6% at 105?kV/cm, accompanied with the excellent temperature stability and fatigue performance. The results demonstrated that BNBLT-xAN system was a promising lead-free candidate for energy-storage applications.     

Electrical and photoluminescence properties of Sm3+ doped Na0.5La0.5Bi8-xSmxTi7O27 ceramics

In this study, Sm³⁺ doped Na_0.5La_0.5Bi_8-xSm_xTi₇O₂₇ (NBT-BITL-xSm, x = 0, 0.01, 0.015, 0.02, and 0.03) ceramics were synthesized via a conventional solid-state reaction process. The structural, electrical, and photoluminescence properties of NBT-BITL-xSm ceramics were systematically investigated. The crystal structure of NBT-BITL-xSm was refined using XRD Rietveld refinement and found to possess a single orthorhombic structure at room temperature. Raman spectroscopy revealed that Sm³⁺ ions preferred to substitute for Bi³⁺ located in the A-sites of pseudo-perovskite layers, inducing a slight decrease in orthorhombic distortion. Strong characteristic emission peaks of Sm³⁺ ions were observed in orange-red regions under a 407 nm laser source, and the sample with x = 0.015 achieved the optimal photoluminescent property. Dielectric measurements showed double anomaly permittivity peaks at the temperature of 589 and 600^°C (T_m and T_c, respectively). The complex impedance spectrum indicated that the electrical conductivities mainly originated from crystal grains at high temperature. The activation energy was calculated to be 1.37–1.44 eV from Arrhenius fitting results. After Sm³⁺ substitution, the activation energy for conductivity was increased as a result of reduced oxygen vacancies.     

Effects of (Cr0.5Ta0.5)4+ on structure and microwave dielectric properties of Ca0.61Nd0.26TiO3 ceramics

The Ca_0.61Nd_0.26Ti_1-x(Cr_0.5Ta_0.5)_xO₃ (CNT-CTx) ceramics with orthorhombic perovskite structure were prepared using the conventional solid-state method. The X-ray diffraction (XRD), Raman spectra and X-ray photoelectron spectra (XPS) were employed to investigate the correlations between crystal structure and microwave dielectric properties of CNT-CTx ceramics. The XRD results showed that all CNT-CTx samples were crystallized into the orthorhombic perovskite structure. The SEM micrographs indicated that the average grain size of samples depended on the sintering temperature. As (Cr_0.5Ta_0.5)⁴⁺ concentration increased, there was a significant decrease in the average grain size of samples. The short range order (SRO) structure and structural distortion of oxygen octahedra proved to exist in CNT-CTx crystals according to the analysis of Raman spectra results. The microwave dielectric properties highly depended on the full width at half maximum (FWHM) of Raman spectra, oxygen octahedra distortion, reduction of Ti⁴⁺ to Ti³⁺ and bond valence. At last, the CNT-CT0.05 ceramic sintered at 1420?°C for 4?h exhibited the good and stable comprehensive microwave dielectric properties: relative permittivity of 96.5, quality factor of 14,360?GHz, and temperature coefficient of resonant frequency of +153.3?ppm/°C.     

Enhanced energy-storage properties of (1-x)(0.7Bi0.5Na0.5TiO3-0.3Bi0.2Sr0.7TiO3)-xNaNbO3 lead-free ceramics

A series of (1-x)(0.7Bi_0.5Na_0.5TiO₃-0.3Bi_0.2Sr_0.7TiO₃)-xNaNbO₃ (BNT-BST-100xNN) lead-free ceramics were fabricated using conventional solid-state reaction technique. The phase behavior, microstructure, dielectric, ac impedance and energy-storage properties of the sintered ceramics were systematically investigated. XRD patterns and surface SEM micrographs revealed the introduction of NaNbO₃ didn't change the perovskite structure of BNT-BST at low doping level. The NaNbO₃ doping gave rise to slimmer P-E loops and thus gained enhanced energy storage properties. Therefore, a maximum energy storage density of 1.03 J/cm³ was achieved at 85 kV/cm at x = 0.01 via increasing the dielectric breakdown strength (DBS). Temperature-dependent dielectric permittivity illustrated the enhanced relaxor characteristics, implying the long-rang ferroelectric order was further damaged due to the introduction of NaNbO₃. The results above indicate the sintered ternary ceramics can be a promising lead-free candidate for energy storage capacitors.     

Impedance spectroscopy of Na0.5Bi4.50+xTi4Oy (x = -0.02, 0, 0.02) ceramics with excellent dielectric properties

The electric and dielectric properties of Na_0.5Bi_4.50+xTi₄O_y (x = −0.02, 0, 0.02) prepared by conventional mixed oxide route have been investigated by impedance spectroscopy (IS) over a wide temperature range. Single-phase bismuth layer-structured perovskite patterns were observed through X-ray diffraction of the three samples Na_0.5Bi_4.5Ti₄O₁₅, Na_0.5Bi_4.48Ti₄O_y, and Na_0.5Bi_4.52Ti₄O_y. The results show that the relative permittivity (εr) increases with the increase in temperature and reaches its maximum at about 675℃. With the continuous increase in temperature, the permittivity decreases gradually. Both relative permittivity and dielectric loss show great stability at the low-temperature zone. The ceramic of x = 0.02 with Ea of 1.09 eV has the maximum oxygen ionic transport number between 600 and 800℃ for all samples. And at this time, it has the maximum electrical conductivity. All the results indicated that Na_0.5Bi_4.50+xTi₄O_y (x = −0.02, 0, 0.02) ceramics were promising base materials for high-temperature capacitor because of their high dielectric properties.     

Effects of Sb content on electrical properties of lead-free piezoelectric (K0.4425Na0.52Li0.0375) (Nb0.9625−xSbxTa0.0375)O3 ceramics

Lead-free (K_0.4425Na_0.52Li_0.0375) (Nb_0.9625−xSb_xTa_0.0375)O₃ piezoelectric ceramics were prepared by the conventional sintering method. The effects of the Sb content on the phase structure, microstructure, dielectric, piezoelectric, and ferroelectric properties of the (K_0.4425Na_0.52Li_0.0375) (Nb_0.9625−xSb_xTa_0.0375)O₃ ceramics were investigated. The much higher Pauling electronegativity of Sb compared with Nb makes the ceramics more covalent. By increasing x from 0.05 to 0.09, all samples exhibit a single perovskite structure with an orthorhombic phase over the whole compositional range, and the bands in the Raman scattering spectra shifted to lower frequency numbers. The grain growth of the ceramics was improved by substituting Sb⁵⁺ for Nb⁵⁺. Significantly, the (K_0.4425Na_0.52Li_0.0375) (Nb_0.8925Sb_0.07Ta_0.0375)O₃ ceramics show the peak values of the piezoelectric coefficient (d₃₃), electromechanical coupling coefficient (k_p), and dielectric constant (?), which are 304 pC/N, 48% and 1909, respectively, owing to the densest microstructure of typical bimodal grain size distributions. Besides, the underlying mechanism for variations of the electrical properties due to Sb⁵⁺ substitution was explained in this work.     

Structure and electrical properties of Ca2+-doped (Na0.47Bi0.47Ba0.06)TiO3 lead-free piezoelectric ceramics

The lead-free piezoelectric ceramics (Na_.47Bi_.47Ba_.06)_1-xCa_xTiO₃ (x?=?0, 0.01, 0.02, 0.03, 0.05, and 0.08, abbreviated as BNBTC/0, BNBTC/1, BNBTC/2, BNBTC/3, BNBTC/5, and BNBTC/8, respectively) were obtained using the solid-state reaction method. The structure, electric conductivity, and dielectric, ferroelectric, and piezoelectric properties of the Ca²⁺-doped (Na_.47Bi_.47Ba_.06)TiO₃ ceramics were thoroughly investigated. The ceramics sintered at 1200?°C exhibit dense microstructures, having relative densities higher than 96%. The X-ray diffraction results demonstrate that all ceramics have a pure perovskite structure. The mean grain sizes of the ceramics are related to the Ca²⁺ quantity. A small quantity of Ca²⁺ ions (x?≤?0.03) improves the piezoelectric and ferroelectric properties of the samples. The dielectric behavior of the samples is sensitive to the Ca²⁺ content and electric poling. The results demonstrate that the electrical properties of the (Na_.47Bi_.47Ba_.06)TiO₃ lead-free ceramics can be well tuned by varying the Ca²⁺ quantity.     

Phase transition induced morphotropic phase boundary behavior and the electric properties in strontium modulated Bi4.5Na0.5Ti4O15 lead-free ceramics

Lead-free (Bi_0.5Na_0.5)_1-xSr_xBi₄Ti₄O₁₅ ceramics (x = 0–0.9) are fabricated by solid state reaction process. XRD analysis shows the symmetry divergence from tetragonal to orthorhombic phase accompanied by morphotropic phase boundary with increasing strontium content. Raman spectra confirm the incorporation of strontium into (Bi_2.5Na_0.5Ti₄O₁₃)^2- layers. SEM graphs exhibit the typical plate-like morphology with regular variation of grain size and crystallization as strontium increases. Multistage ferroelectric transition is observed with x = 0.2–0.4. Piezoelectric performance measurements present the well thermal stability at x = 0.4. The dielectric properties display a shifting of Curie temperature towards low temperature with increasing strontium ions. It can be due to the crystal lattice distortion by larger radius of strontium and the increasing tolerance factor. ac conductivity and impedance measurements suggest that electron hopping mainly contributes to the low temperature region. Ionization conductivity by oxygen vacancy migration including first-ionization and double-ionization plays the dominating role in the middle and high temperature region. The controllable properties indicate the potential applications for electric devices of (Bi_0.5Na_0.5)_1-xSr_xBi₄Ti₄O₁₅ ceramic.     

Na0.5Bi0.5TiO3-based ferroelectric relaxor with high thermal stability and anti-fatigue for charge-discharge properties

Apart from discharge energy density (W_r) and discharging time (t_0.9), thermal stability and anti-fatigue for charge-discharge performance are also the important performance indexes for dielectric pulsed capacitor. Na_0.5Bi_0.5TiO₃ based ceramics are usually accompanied by huge electric field-induced strain when appling electric field, resulting in the fatigue phenomenon and thermal accumulation effect in the cycling process. In this work, Na_0.5Bi_0.5TiO₃-xNaNbO₃ (NBT-xNN) ferroelectric relaxor ceramic has been prepared by the solid state reaction process. The effect of NaNbO₃ content on microstructures, impedance spectroscopy, electric-field-induced strain and charge-discharge performance of NBT-xNN ceramics have been investigated systematically. Results indicate the proper percent of NaNbO₃ could favor the formation of polar nanoregions (PNRs), which leads to the diffusion of phase transition and the diminution of electromechanical strain. Therefore, the high thermal stability and anti-fatigue for charge-discharge property has been achieved in NBT-xNN ceramics. An enhanced discharging energy density of 2.44 J cm^?3 along with discharge time of 0.31 μs could be obtained in the NBT-xNN with x = 0.3, and a very stable discharge energy density of 2.06 J cm^?3 concomitantly with discharge time less than 0.37 μs could be gained in a wide temperature range of 20–150 °C with a fluctuation of ±4% after 10⁴ charge/discharge cycles. This work would contribute to the development of charge-discharge system, especially dielectric capacitor, for green pulsed power devices.     

Fabrication and electrical properties of textured (Na,K)0.5Bi0.5TiO3 ceramics by reactive-templated grain growth

Textured (Na_0.85K_0.15)_0.5Bi_0.5TiO₃ (NKBT) ceramics with a relative density of >94% were fabricated by reactive-templated grain growth. Plated-like Bi₄Ti₃O₁₂ template particles synthesized by the NaCl–KCl molten salt process were aligned by tape casting in a mixture of original oxide powders. The effect of sintering temperature on the grain orientation and electrical properties of textured NKBT ceramics were investigated. The results show that the textured ceramics have a microstructure with plated-like grains aligning in the direction parallel to the casting plane. The degree of grain orientation increased at increasing sintering temperature. The textured ceramics show anisotropic electrical properties in the directions parallel and perpendicular to the casting plane. The dielectric constant parallel to {h 0 0} plane is three times higher than that of the perpendicular direction in textured NKBT ceramics. The optimized sintering temperature is 1150 °C where the maximum dielectric constant is 2041, the remnant polarization is 68.7 μC/cm², the electromechanical coupling factor (k₃₁) and the piezoelectric constant (d₃₃) amount to 0.31 and 134 pC/N, respectively.