Ga-Sb-S-I chalcohalide glasses and fibers for mid-infrared applications

In this work, environment friendly Ga-Sb-S-I chalcohalide glasses and fibers are developed for mid-infrared applications. The developed Ga₈Sb₃₂S_60-xI_x (x = 0-10) glasses have a transmission window of ~0.7-14 µm, linear refractive indices (n₀) of ~ 2.690-2.751 at 1.55 µm, nonlinear refractive indices (n₂) of ~10.5-12.4 × 10⁻¹⁴ cm²/W at 1.55 µm, and zero dispersion wavelengths (λ₀) of ~4.94-5.25 µm. The developed Ga₈Sb₃₂S₅₅I₅/Ga₈Sb₃₁S₅₆I₅ (core/cladding) fiber can transmit infrared light from below 2 µm to ~8 µm, and shows the minimum loss of ~1.2 dB/m at ~6 µm. The wide transmission window, high optical nonlinearity and superior thermal stability against crystallization of the glasses, and the good 2-8 µm transmission property of the fiber make these materials promising for mid-infrared applications such as thermal imaging, nonlinear optics, and laser transmission.     

The influence of different antimony content in Ga-As-Sb-S chalcogenide glass system: Modification of physical & spectroscopic properties and fiber forming ability

In order to improve the fiber drawing performances including the anti-crystallization in fiber drawing process and the mechanical properties, the fourth component of antimony (Sb) was introduced into Ga_0.8As_39.2S₆₀ glass, and a serial Ga_0.8As_39.2-xSb_xS₆₀ (x = 0, 1, 3,5, 7, 9 and 11) novel chalcogenide glasses doped with 3000 ppmw Dy³⁺ ions were prepared. The influences of antimony content on the physical properties, spectroscopic properties and fiber forming ability of glass were investigated. The experiment results indicate that the introduction of moderate antimony into glass effectively improves the fiber drawing performance and the spectroscopic properties of Dy³⁺ ions. The Ga_0.8As_34.2Sb₅S₆₀ composition glass possesses the best performance and it is recommended a good candidate for mid-infrared laser working medium.     

The effect of antimony trioxide on poly (vinyl alcohol)-lithium perchlorate based polymer electrolytes

A new type of inorganic filler antimony trioxide (Sb₂O₃) is used to prepare composite polymer electrolytes based on poly (vinyl alcohol) (PVA) and lithium perchlorate (LiClO₄) by solution casting technique. The incorporation of Sb₂O₃ enhances the ionic conductivity at ambient temperature and exhibits the highest ionic conductivity value of 9.51×10^?5 S cm^?1 upon the addition of 6 wt% Sb₂O₃. Thermogravimetric analyses (TGA) reveal that the second weight loss is reduced. This shows the improvement in thermal stability of electrolyte film upon addition of Sb₂O₃. Differential scanning calorimetry (DSC) analyses show that the glass transition temperature (T_g) value decreases with incorporation of Sb₂O₃. X-ray diffraction (XRD) studies show that the addition of Sb₂O₃ decreases the degree of crystallinity whereas scanning electron microscope (SEM) studies reveal the surface morphology of the prepared composite polymer electrolytes.     

Structure and microwave dielectric properties of Li(Al1-xLix)SiO4-x ceramics

Li(Al_1-xLi_x)SiO_4-x (x = 0.005, 0.01, 0.015, and 0.02) ceramics were synthesized via a traditional solid phase reaction method with different sintering temperatures. To determine the positions occupied by Li⁺ in the lattice, the defect formation energies and total energies of various sites of LiAlSiO₄ (LAS) occupied by Li⁺ were examined, and the energy of LAS systems were calculated using density functional theory of first-principle with the CASTEP module. The results demonstrated that the Al-sites occupied by Li⁺ had the lowest formation energies and total energy, so Li ⁺ should substitute Al³⁺. The impacts of replacing Al³⁺ with Li⁺ on the bulk density, sintering properties, phase composition, microstructure, and microwave dielectric properties of Li(Al_1-xLi_x)SiO_4-x (0 = x ≤ 0.02) ceramics were thoroughly studied. With Li⁺-doping, the sintering temperature decreased from 1300 °C (x = 0) to 1175 °C (x = 0.02), while the Q × f and τ_f values of LAS ceramics significantly increased. The Li(Al_0.99Li_0.01)SiO_3.99 ceramic was fully sintered at 1250 °C for 10 h to obtain excellent microwave dielectric properties: ε_r = 3.49, Q × f = 51,358 GHz, and τ_f = ?51.48 × 10^?6 °C^?1.     

Ga2S3‐Sb2S3‐CsI chalcohalide glasses for mid‐infrared applications

In this study, a new chalcohalide glass system, Ga₂S₃‐Sb₂S₃‐CsI, is reported. It has a glass‐forming domain composed of ~0‐35 mol% Ga₂S_3, ~15‐95 mol% Sb₂S₃, and ~0‐55 mol% CsI. The glasses have a wide transparent window of ~0.7‐13.5 μm, high third‐order nonlinear refractive indices of ~1.7‐8.7×10^?14 cm²/W @ 1.55 μm, and relatively short zero group‐velocity‐dispersion wavelengths of 3.8‐5.15 μm. The glasses can dissolve more than 2 mol% active ions (e.g., Dy³⁺), and the doped glasses show intense emissions in the mid‐infrared. These superior properties demonstrate their good potentials for mid‐infrared applications such as thermal imaging, nonlinear photonics and lasers.     

Synthesis and thermal expansion behaviors of spin-coated Sc2Mo3O12 thin films

Orthorhombic Sc₂Mo₃O₁₂ films have been successfully prepared via spin coating technique followed by annealing at 500–750 °C. The phase composition, microstructure, morphology and negative thermal behavior of the synthesized Sc₂Mo₃O₁₂ films were investigated. XRD and XPS analysis indicate that as-deposited film is amorphous. Orthorhombic Sc₂Mo₃O₁₂ films can be prepared after post-annealing at 500–750 °C for 1 h. The crystallinity of Sc₂Mo₃O₁₂ films gradually improved with the increase of post-annealing temperature. SEM analysis shows as-deposited film is smooth and compact, and the grain size of Sc₂Mo₃O₁₂ film grows up as the post-annealing temperature increases. Variable temperature XRD analysis demonstrates that the synthesized orthorhombic Sc₂Mo₃O₁₂ films show stable thermo-chemical and anisotropic NTE property in 25–700 °C. The corresponding coefficients of thermal expansion (CTEs) of the orthorhombic Sc₂Mo₃O₁₂ film in a, b and c directions are ?6.68 × 10^?6 °C^?1, 5.08 × 10^?6 °C^?1 and ?4.76 × 10^?6 °C^?1, respectively. The whole unit cell of the orthorhombic Sc₂Mo₃O₁₂ film shrinks and the volumetric CTE of the Sc₂Mo₃O₁₂ thin film is ?6.36 × 10^?6 °C^?1, and the linear CTE is about ?2.12 × 10^?6 °C^?1 (α_v = 3α_l).     

Quantitative estimation of crystallization kinetics in GeGaS and Au-doped GeGaS glass-ceramics

Ge_26.7Ga₈S_65.3 (GGS) and 0.1% Au-doped Ge_26.7Ga₈S_65.3 (GGS-Au) glasses were prepared and annealed at a temperature that is 20 K higher than their respective glass transition temperature in order to create chalcogenide glass-ceramics. X-ray diffraction results showed that, thermal annealing can induce large amount of the crystal growth in the pure glass but this can be significantly suppressed by Au doping in the glass, which is in agreement with the previous results. We further employed various calorimetric methods, together with Mauro-Yue-Ellison-Gupta-Allan viscosity model, to investigate their crystallization kinetics. The crystal growth rate at annealing temperature of 723 K was quantitatively deduced to be 2.5 × 10⁻⁸ μm/s in Au-doped GGS, which is about 20 times slower than that in the pure GGS with a growth rate of 4.7 × 10⁻⁷ μm/s.     

Characterization of non-stoichiometric Ga2O3-x thin films grown by radio-frequency powder sputtering

We report the synthesis and characterization of non-stoichiometric Ga₂O_3-x thin films deposited on sapphire (0001) substrates by radio-frequency powder sputtering. The chemical and electronic states of the non-stoichiometric Ga₂O_3-x thin films were investigated. By sputtering in an Ar atmosphere, the as-grown thin films become non-stoichiometric Ga₂O_2.7, due to the difference in sputtering yield between Ga and O species of the Ga₂O₃ target. The electronic states of the thin films consist of ~85% Ga³⁺ and ~15% Ga¹⁺, corresponding to Ga₂O₃ and Ga₂O, respectively. The films have the electrical characteristics of a semiconductor, with electrical conductivity of approximately 5.0 × 10^-4 S cm^-1 and a carrier concentration of 4.5 × 10¹⁴ cm^-3 at 300 K.     

Mechanistic study of the effect of Ca–Sn co-doping on the microwave dielectric properties and magnetic properties of YIG

To investigate the crystal structure, electrical properties, and magnetic properties of Ca–Sn co-doped Y_3-xCa_xFe_5-xSn_xO₁₂ (x = 0.00–0.25 in steps of 0.05), solid-state reaction experiments, first principles calculations, and complex crystal bonding theoretical calculations were performed. The relative permittivity (ε_r) is strongly correlated with the average bond ionicity when Ca²⁺ is added. Furthermore, appropriate Sn⁴⁺ substitution significantly lowers the dielectric loss (tanδ_ε) associated with the lattice energy. The right amount of Ca–Sn co-doping can change the saturation magnetization (4πM_S) and improve the microscopic morphology of YIG, lowering the ferromagnetic resonance linewidth (ΔH) of YIG. The optimized microwave dielectric and magnetic properties are as follows: ε_r = 14.7, tanδ_ε = 4.15 × 10^?4, 4πM_S = 1680 G, and ΔH = 53 Oe for Y_2.8Ca_0.2Fe_4.8Sn_0.2O₁₂ sintered for 6 h at 1425 °C. Based on this material, a simple 3D model of a strip-line circulator with an insertion loss of less than 0.3 dB at each port and isolation greater than 20 dB in the 10–12 GHz range was developed, indicating the potential of the material for microwave high-frequency components such as circulators.     

Mid-infrared dual-rhombic air hole Ge20Sb15Se65 chalcogenide photonic crystal fiber with high birefringence and high nonlinearity

We propose a mid-infrared dual-rhombic air hole hexagonal lattice photonic crystal fiber with high birefringence and large nonlinearity based on Ge₂₀Sb₁₅Se₆₅ chalcogenide glass. The properties of birefringence, dispersion, nonlinearity, and confinement loss were investigated in the 3?µm~5?µm mid-infrared range by using the Finite Difference Time Domain (FDTD) method with perfectly matched layer (PML) absorption boundary conditions. The results indicate that for the optimized structural parameters of Λ=?2.0?µm, D=?1.932?µm, d=?0.8?µm, and H=?0.8?µm, an ultrahigh birefringence of 0.041, a very low confinement loss of 0.0013?dB/km (for x-polarization modes) and 0.0342?dB/km (for y-polarization modes), and the maximum nonlinearity coefficient of 4375 w^?1km^?1 (for x-polarization modes) and 3960 w^?1km^?1 (for y-polarization modes) were achieved, respectively. The proposed PCF has a lower confinement loss and higher birefringence than an elliptical-hole PCF with the same air-filling fraction. Thus, it will be an excellent candidate for mid-infrared optical fiber sensing, precision optical instruments and nonlinear optics.     

Electrospinning synthesis and negative thermal expansion of one-dimensional Sc2Mo3O12 nanofibers

Orthorhombic Sc₂(MoO₄)₃ nanofibers have been prepared by ethylene glycol assisted electrospinning method. The effects of annealing temperature, precursor concentration, spinning distance and solvent on the preparation of Sc₂(MoO₄)₃ nanofibers were characterized by XRD, SEM, HRTEM, EDX and high-temperature XRD. XRD analysis shows as-prepared nanofibers are amorphous. Orthorhombic Sc₂(MoO₄)₃ nanofibers can be fabricated after annealing at different temperatures in 500–800 °C for 2 h. The crystallinity of Sc₂(MoO₄)₃ nanofibers improves and the nanofiber diameter decreases gradually as the annealing temperature increases. However, the nanofiber structure was destroyed at the annealing temperature above 700 °C. Higher precursor concentration results in a slight increase of diameter and decrease in destroying temperature of Sc₂(MoO₄)₃ nanofibers. Spinning distance also affects the diameter of nanofibers, and the nanofiber diameter decreases as the distance increases. One-dimensional orthorhombic Sc₂(MoO₄)₃ nanofibers exhibit anisotropic negative thermal expansion. In 25–700 °C, the coefficients of thermal expansion (CTE) of α_a, α_b and α_c are ?5.81 × 10^?6 °C^?1, 4.80 × 10^?6 °C^?1 and -4.33 × 10^?6 °C^?1, and the α_l of Sc₂(MoO₄)₃ nanofibers is ?1.83 × 10^?6 °C^?1.     

High-pressure and high-temperature synthesis of stable SxCo3.6Ni0.4Sb12 skutterudite compounds

Compared to Te, Ni is found in abundance in the earth's crust. At the same time, the mechanical properties of Ni atom-substituted skutterudite are significantly improved. In this study, a series of S-filled Ni-substituted skutterudite compounds were synthesized by a high-pressure and high-temperature (HPHT) method in the synthesis pressure range of 1.0–3.0 GPa. The phase composition, microscopic morphology, and electrothermal transmission properties of the S_xCo_3.6Ni_0.4Sb₁₂ (x = 0, 0.05, 0.10, 0.20) samples were systematically characterized. Phase composition analysis showed that the introduction of S atoms into the intrinsic pores of skutterudite can improve the solid solution limit of Ni atoms in the Co sites of skutterudite. The filling limit of S increased with the synthetic pressure. Moreover, microscopic morphology analysis revealed that the filling of S atoms inhibited the growth of grains. A large number of lattice fringes in different directions were found in the sample, containing abundant microstructures such as lattice distortions and dislocation defects. Compared with the synthesized samples, S_0.05Co_3.6Ni_0.4Sb₁₂ synthesized at 1.0 GPa had a maximum room temperature power factor of 7.98 × 10^?4 Wm^?1K^?2. The electrical properties of S_0.05Co_3.6Ni_0.4Sb₁₂ samples stored for 6 months without any protective measures were tested at room temperature. No obvious changes in performance were observed, which proved that the HPHT method can synthesize stable samples. After several thermal cycles, the electrical properties of the S_0.05Co_3.6Ni_0.4Sb₁₂ sample was tested for variable temperature, and it was found that the sample still had good stability. How the substitution of S atoms with Ni atoms reduces the lattice thermal conductivity can be explained by fitting the Callaway model. The S_0.05Co_3.6Ni_0.4Sb₁₂ sample synthesized at 1.0 GPa had a maximum zT value of 0.46 at the test temperature of 773 K, which decreased to 0.43 after multiple thermal cycles at the same temperature.     

The decrease of depolarization temperature and the improvement of pyroelectric properties by doping Ta in lead-free 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 ceramics

Ta-doped lead-free 0.94NBT-0.06BT-xTa (x=0.0–1.0%) ceramics were synthesized by a conventional solid-state route. XRD shows that the compositions are at a morphotropic phase boundary where rhombohedral and tetragonal phases coexist. The depolarization temperature (T_d) shifted to lower temperature with the increase of Ta content. The pyroelectric coefficient (p) of doped ceramics greatly enhanced compared with undoped material and reached a maximum of 7.14×10⁻⁴ C m⁻² °C⁻¹ at room temperature (RT) and 146.1×10⁻⁴ C m⁻² °C⁻¹ at T_d at x=0.2%. The figure of merits, F_i and F_v, also showed a great improvement from 1.12×10⁻¹⁰ m v⁻¹ and 0.021 m² C⁻¹ at x=0.0 to 2.55×10⁻¹⁰ m v⁻¹ and 0.033 m² C⁻¹ at x=0.2% at RT. Furthermore, F_i and F_v show the huge improvement to 52.2×10⁻¹⁰ m v⁻¹ and 0.48×10⁻¹⁰ m v⁻¹ respectively at T_d at x=0.2%. F_C shows a value between 2.26 and 2.42 ×10⁻⁹ C cm⁻² °C⁻¹ at RT at x=0.2%. The improved pyroelectric properties make NBT-0.06BT-0.002Ta ceramics a promising infrared detector material.     

Structured active fiber fabrication and characterization of a chemically high-purified Dy3+-doped chalcogenide glass

By conventional melt-quenching techniques, a series of Dy³⁺-doped (0.1 to 1.0 wt%) Ga₅Ge₂₀Sb₁₅S₆₀ bulk glasses were fabricated and their potential for developing mid-infrared fiber laser beyond 4 μm were evaluated, in which the optimal Dy³⁺ doping concentration was found to be 0.3 wt% and the largest laser quality factor value (σ_e × τ_mea = 2.62 × 10⁻²³ cm² s) among all of the Dy³⁺-doped chalcogenide glass was obtained. On this basis, through using the chemical purification methods with chlorine gas combined with the dynamic distillation process, the high-purity GGSS glasses with low O–H and S–H absorptions were successfully fabricated, which was confirmed by the optimized mid-infrared linear transmittance and improved fluorescent lifetimes of Dy³⁺: ⁶H_13/2, ⁶H_11/2 levels. Furthermore, for the first time to the best of our knowledge, the Dy³⁺-doped, single-mode, and double-cladding chalcogenide fibers with the core/cladding ratios of 125:60:11 and 125:66:11.5 were achieved by a multistage rod-in-tube fiber drawing process and extrusion methods, respectively. The GeS₂-based fiber exhibits excellent transmission performance at 1.0-5.0 μm: 3.0 dB/m at 2.9 μm (O–H), 2.4 dB/m at 4.1 μm (S–H). Combining the advantages of high-purity, high doping concentration and single-mode double-cladding structure, the optimized active fiber should be an ideal efficient and low-threshold medium toward mid-infrared fiber laser beyond 4 μm.     

Fabrication and electrical properties of Bi2-xSbxTe3 ternary nanopillars array films

Highly oriented Bi_2-xSb_xTe₃ (x?=?0, 0.7, 1.1, 1.5, 2) ternary nanocrystalline films were fabricated using vacuum thermal evaporation method. Microstructures and morphologies indicate that Bi_2-xSb_xTe₃ films have pure rhombohedral phase with well-ordered nanopillars array. Bi, Sb and Te atoms uniformly distributed throughtout films with no precipitation. Electrical conductivity of Bi_2-xSb_xTe₃ films transforms from n-type to p-type when x?>?1.1. Metal-insulator transition was observed due to the incorporation of Sb in Bi₂Te₃. Bi_2-xSb_xTe₃ film with x?=?1.5 exhibits optimized electrical properties with maximum electrical conductivity σ of 2.95?×?10⁵ S?m^?1 at T?=?300?K, which is approximately ten times higher than that of the undoped Bi₂Te₃ film, and three times higher than previous report for Bi_0.5Sb_1.5Te₃ films and bulk materials. The maximum power factor PF of Bi_0.5Sb_1.5Te₃ nanopillars array film is about 3.83?μW?cm^?1 K^?2 at T?=?475?K. Highly oriented (Bi,Sb)₂Te₃ nanocrystalline films with tuned electronic transport properties have potentials in thermoelectric devices.     

Low temperature reaction of point defects in ion irradiated 4H–SiC

The low temperature evolution of point defects induced in SiC by ion irradiation was investigated by deep level transient spectroscopy. The defects were introduced by irradiation with a 7.0 MeV beam of C⁺ ions at a fluence of 6 × 10⁹ cm^? 2. Annealing was then performed in the temperature range of 330–400 K in order to study the change in point defect structure with temperature. The low temperature annealing performed was observed to induce a change in the produced defects. The deep levels related to the S_x (E_C ? 0.6 eV) and S₂ defects (E_C ? 0.7 eV) recovered with annealing while, simultaneously, a new level, S₁ (E_C ? 0.4 eV), was formed. The activation energy of the S₁ defect is 0.94 eV, while the annealing of both the S_x and S₂ levels occurred with activation energy of 0.65 eV.     

Tailoring structure and piezoelectric properties of CaBi2Nb2O9 ceramics by W6+-Doping

Calcium bismuth niobate (CaBi₂Nb₂O₉) is a typical bismuth-layer structured piezoelectrics (BLSPs) with a high Curie temperature (T_C) of ～943 °C, but it has low piezoelectric coefficient and high-temperature resistivity which severely limits signal acquisition in the high-temperature piezoelectric vibration sensors. Ion-doping modification is regarded as an effective way to enhance electrical properties. In this work, W⁶⁺ donor-doping at Nb⁵⁺ site in the CaBi₂Nb_2-xW_xO₉ (x = 0, 0.020, 0.025, 0.030, 0.035 and 0.040) piezoelectric ceramics with T_C of 931 ± 2 °C were fabricated by the conventional solid-state reaction method. The effects of W⁶⁺-doping on crystal structure of CaBi₂Nb_2-xW_xO₉ as well as microscopic morphology and electrical properties of ceramics were investigated systematically. The tetragonality, isotropy and electrical properties of the ceramics were enhanced with the introduction of W⁶⁺ dopant. It was found that x = 0.025 was the optimal W⁶⁺-doping ratio that yielded remnant polarization of 8.0 μC/cm², electrical resistivity of 3.0 × 10⁶ Ω cm at 600 °C, piezoelectric coefficient (d₃₃) of 14.4 pC/N, and good thermal depoling property. Our work has established a feasible approach to tune the structure of CaBi₂Nb₂O₉ to improve piezoelectric properties for potential applications in high-temperature piezoelectric vibration sensors.     

Improvement of piezoelectricity of (Na,K)Nb-based lead-free piezoceramics using [001]-texturing for piezoelectric energy harvesters and actuators

0.96(Na_0.5K_0.5)(Nb_0.93Sb_0.07)O₃?(0.04?x)BaZrO₃?x(Bi_0.5Ag_0.5)ZrO₃[NKNS?(0.04?x)BZ?xBAZ] ceramics are well textured along the [001] direction using 3.0 mol% NaNbO₃ seeds. The textured-NKNS?0.02BZ?0.02BAZ thick film has a rhombohedral-orthorhombic-tetragonal (R-O-T) structure with a large proportion of the O-R structure (> 80%). This specimen exhibits the largest values for d₃₃ (805 pC/N) and d₃₃ ×g₃₃ (29.5 ×10^?12 m²/N), which are the largest d₃₃ and d₃₃ ×g₃₃ values of NKN-based piezoceramics to date. It exhibits a large strain (0.17% at 4.0 kV/mm). Therefore, it is an outstanding piezoceramic material for piezoelectric energy harvesters (PEHs) and actuators. A PEH and actuator are fabricated using this specimen. The PEH shows a large power density (4.3 mW/cm³), which is the largest value among the PEHs produced by lead-free piezoceramics. The actuator exhibits a large acceleration (50.8 G) and displacement (3.9 mm), which are the best actuating properties among the actuators produced by lead-free piezoceramics. Therefore, texturing is an excellent technique for improving the piezoelectricity of NKN-based piezoceramics.     

Negative thermal expansion coefficient of Sc-doped indium tungstate ceramics synthesized by co-precipitation

Co-precipitation was successfully applied to synthesize the Sc³⁺ doped In_2-xSc_x (WO₄)₃ (x = 0, 0.3, 0.6, 0.9 and 1.2) compounds. The composition- and temperature-induced structural phase transition and thermal expansion behaviors of Sc³⁺ doped In₂(WO₄)₃ were investigated. Results indicate that In_2-xSc_x (WO₄)₃ crystalizes in a monoclinic structure at 300 °C for x ≤ 0.3 and changes into hexagonal structure for x ≥ 0.6. Hexagonal In_1.1Sc_0.9(WO₄)₃ displays negative thermal expansion (NTE) with an average linear coefficient of thermal expansion (CTE) of −1.85 × 10⁻⁶ °C ⁻¹. After sintering at 700 °C and above, a phase transition from hexagonal to orthorhombic phase was observed in In_2-xSc_x (WO₄)₃ (x ≥ 0.6). Sc³⁺ doping successfully reduce the temperature-induced phase transition temperature of In_2-xSc_x (WO₄)₃ ceramics from 250 °C (x = 0) to room temperature (x = 0.9). When x = 0.9 and 1.2, the average linear CTEs of In_2-xSc_x (WO₄)₃ ceramics are −5.45 × 10⁻⁶ °C⁻¹ and -4.43 × 10⁻⁶ °C⁻¹ in a wider temperature range of 25–700 °C, respectively.     

Synthesis and characterization of Ga-doped Ba3MoNbO8.5 electrolytes for intermediate temperature-solid oxide fuel cells

Ba₃MoNb_1-xGa_xO_8.5-δ (BMNG, 0 ≤ x ≤ 0.2) powders are successfully prepared by sol-gel autoignition method. The effects of acceptor-type Ga³⁺ doping on Ba₃MoNbO_8.5 (BMN) are characterized by thermogravimetric analysis, X-ray diffraction, scanning electron microscope, Raman spectroscopy, and electrochemical impedance spectroscopy. All BMNG samples crystallize as a single phase in the R-3m space group and show great phase stability at various environments. Doping a small amount of gallium can effectively improve bulk conductivity and sintering density of BMN. The ionic conductivity of Ba₃MoNb_0.9Ga_0.1O_8.5-δ (BMNG10) is the highest, which can reach 2.05 × 10^?2 S cm^?1 at 800 °C. The enhanced ionic conductivity is primarily related to the increase of oxygen vacancy concentration and the number of tetrahedral units within the structure. In addition, through successfully assembling and evaluating a single cell supported by the BMNG10 electrolyte, it is proved that the practical utilization of BMNG10 in intermediate temperature-solid oxide fuel cells (IT-SOFCs) is feasible. In short, hexagonal perovskite derivative BMNG10 is a promising oxide ion conductor for IT-SOFCs.