阴极电沉积制备铝掺杂ZnO薄膜及其光催化性能

以不锈钢为基体,采用阴极电沉积法,从Zn(NO3)2和Zn(NO3)2+Al(NO3)3水溶液中制备了纯ZnO薄膜和铝掺杂ZnO薄膜.用X射线衍射、 扫描电镜和紫外-可见光漫反射光谱研究了铝掺杂对ZnO薄膜相变和光催化活性的影响.结果表明:在铝掺杂ZnO薄膜中,部分Al3+进入ZnO的晶 格,形成固溶体:铝掺杂使ZnO的吸收阈值蓝移大约50nm.和纯ZnO薄膜相比,铝掺杂ZnO薄膜在紫外光和可见光区均呈现出更高的催化活性, 反应60min后.甲基橙的降解率分别提高了45%和30%.探讨了铝掺杂ZnO薄膜光催化活性提高的原因.     

掺杂工艺对Al-F共掺ZnO薄膜性能的影响

采用溶胶-凝胶旋涂工艺在普通玻璃基片上制备出Al-F共掺杂ZnO薄膜,共掺杂离子浓度从0．25％增加到1．25％,退火气氛分别为空气、氢气和氩气,退火温度均为450℃。利用SEM测试方法研究了共掺杂离子浓度和退火气氛对薄膜表面形貌的影响;用紫外-可见分光光度计及四探针法等仪器对其对其透光性以及电阻率进行了测试,进一步研究了退火气氛对薄膜光电性能的影响。结果表明：制备的Al-F共掺杂ZnO薄膜多数表面平整,晶粒致密均匀;各种气氛下制备的薄膜在可见光大部分范围内透过率均超过80％;通过比较不同气氛下各种薄膜的电阻率,得知在H2气氛中退火处理后其电阻率最低为9．36×10^-2Ω·cm;与单一掺杂Al离子或F离子的薄膜相比较,Al—F共掺ZnO薄膜电阻率最低。     

铜、锌共掺杂二氧化钛薄膜的制备及光催化活性

以钛酸丁酯为钛源,采用溶胶-凝胶法制备了Cu2+、Zn2+共掺杂TiO2薄膜,通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、紫外可见吸收光谱(UV-Vis)对其进行表征.结果表明,Cu2+、Zn2+掺杂促进了TiO2晶相的转变,引入铜锌离子之后TiO2的禁带宽度由3.37 eV减少至3.28 eV.SEM表明Cu2+、Zn2+共掺杂TiO2薄膜晶粒比纯TiO2更加细小.XPS分析证实了制备的铜锌共掺杂TiO2,锌以二价氧化价态存在.以亚甲基蓝为模拟污染物,对其进行光催化降解实验,结果表明:Cu2+、Zn2+共掺杂的协同作用使TiO2薄膜的光催化活性显著提高.     

Mg-Co共掺杂对ZnO-TCO薄膜光学特性及微观结构的影响

研究了Sol-Gel法制备不同掺杂浓度的Mg-Co共掺杂对ZnO-TCO(transparent conductive oxide,TCO)薄膜的微观结构及光学特性的影响。样品的光学、成分结构及表面形貌特性表征分别利用荧光光谱仪、紫外-可见-近红外光谱仪、XPS、X射线衍射仪、扫描电子显微镜。结果发现:Mg、Co均以离子态对ZnO进行了替位掺杂,薄膜的生长特性均呈现(002)峰择优取向;掺杂前,ZnO薄膜晶粒尺寸较小,表面平整、颗粒疏松;共掺杂后,薄膜表面团簇增加。Mg-Co掺杂比例为2∶2时,薄膜的内部缺陷增多,结晶质量明显下降。由光透过率谱发现薄膜在可见-近红外区域的光透过率基本保持在95%左右,由于掺杂Co,薄膜的禁带宽度变窄,在波长500~650 nm之间出现了特征吸收峰,蓝色发光增强,并且紫外发光峰发生红移。     

探究掺杂对ZnO薄膜禁带宽度的影响因素

本文分析了ZnO的能带和态密度,总结了几种典型元素掺杂对ZnO薄膜禁带宽度的影响规律及作用机理,得出影响ZnO薄膜禁带宽度的主要因素：掺杂浓度、温度、厚度、带电粒子间的多体效应、杂质及缺陷带与导带的重叠。     

溶胶凝胶反提拉法制备PZT铁电薄膜及La3+, Ca2+离子混合掺杂对薄膜结构和性能的影响

采用醋酸铅、硝酸锆、钛酸丁酯制备的独立前驱单体,通过溶胶-凝胶反提拉涂膜技术在基片Pt／Ti／SiO2／Si上制备了锆钛酸铅(lead zlrconate titanate,PZT)铁电薄膜。反提拉涂膜技术是通过逆向思维而提出的薄膜制备新方法,该技术避免了浸渍提拉涂膜存在的机械传动装置较难操作和控制的问题,且能够一次性在多个异形器件上同时大面积涂膜。分析了不同金属离子掺杂,特别是高、低价离子混合掺杂对薄膜微结构和性能的影响,发现：同时掺杂La^3 ,Ca^2 离子比单独掺杂La^3 离子薄膜的剩余极化强度Pr大,且漏电电流明显减小,另外金属离子掺杂有利于降低薄膜晶化温度和增大晶粒尺寸。     

溶胶-凝胶方法制备ZnO：Al薄膜及其制备工艺条件研究

采用Sol—Gel工艺在玻璃基片上制备出C轴择优取向性、高可见光透过率以及高电导率的Al^3＋离子掺杂的ZnO透明导电薄膜ZnO：Al（ZAO薄膜）．并研究了退火温度、Al掺杂量等对其光电性能的影响．结果表明，溶胶-凝胶法制备ZAO薄膜的最佳工艺条件为：溶胶浓度0．75mol／L、掺杂量1．5atm％，镀膜层数10层（厚度约为136nm）、退火温度600℃．     

溶胶–凝胶合成Zn_(1–x)Cd_xO薄膜的结构形貌和光学性能

采用溶胶–凝胶法在玻璃基底上制备镉掺杂氧化锌(Zn_(1–x)Cd_xO)薄膜。利用X射线衍射仪、场发射扫描电子显微镜、紫外–可见分光光度计研究了镉掺杂量、预处理温度对薄膜结构及其光学性能的影响。结果表明:当预处理温度为150℃,且x0.3时,Zn_(1–x)Cd_xO薄膜为六角纤锌矿结构;当x≥0.3时,Zn_(1–x)Cd_xO薄膜出现立方岩盐矿结构。制备的薄膜表面的晶粒分布均匀且致密,平均晶粒尺寸随掺杂量的增加先减小后增大。Zn_(1–x)Cd_xO薄膜在可见光范围内透过率均高于80%;随着镉掺杂量增大,薄膜的吸收边红移,其禁带宽度逐渐由3.3 e V(x=0)减小至2.2 e V(x=1.0)。     

ZnO薄膜的新溶胶-凝胶法制备及其光学性能

氯化锌和乙酰丙酮在乙醇中反应得到乙酰丙酮(AA)络合锌溶液(即Zn(AA)Cl2),利用Na OH与Zn(AA)Cl2反应去除溶液中的Cl-,制得含锌的溶胶溶液。使用制得的溶胶溶液利用浸渍-提拉法在玻璃基上制备Zn O薄膜。通过X射线衍射仪和紫外-可见光光度计对样品进行晶体结构分析和光学表征。结果显示:在500℃制备的薄膜样品具有六方纤锌结构的Zn O,由谢乐方程估算Zn O薄膜的平均晶粒尺寸为70~80 nm,由薄膜的光学表征确定制得的Zn O薄膜的直接禁带宽度为3.17 e V。     

连续离子层吸附反应法制备(Zn,Cd)S薄膜及其性能

采用液相薄膜制备工艺——连续离子层吸附反应法(successive ionic layer adsorption and reaction,SILAR),在室温下,使用混合阳离子前驱体于玻璃衬底上制备了(Zn,Cd)S薄膜．采用X射线光电子谱分析薄膜的成分,测定紫外透射光谱,分析不同成分对薄膜光电性能的影响,并使用环境扫描电镜对薄膜的表面形貌进行观察．实验结果表明：SILAR法制备薄膜的生长速率约为3nm／cycle。(Zn,Cd)S薄膜的成分偏离前驱体溶液中的n(Zn)／n(Cd)值,表现为Cd含量偏大,这与CdS和ZnS二者的溶度积不同有关。随着Cd含量的增加,薄膜的透射率和禁带宽度降低,电导率增大。通过控制前驱体混合溶液中不同阳离子间的比例可以得到带宽可调的复合硫化物薄膜。     

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zn_i and V_o is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.     

Deposition of F-doped ZnO transparent thin films using ZnF2-doped ZnO target under different sputtering substrate temperatures

Highly transparent and conducting fluorine-doped ZnO (FZO) thin films were deposited onto glass substrates by radio-frequency (RF) magnetron sputtering, using 1.5 wt% zinc fluoride (ZnF₂)-doped ZnO as sputtering target. Structural, electrical, and optical properties of the FZO thin films were investigated as a function of substrate temperature ranging from room temperature (RT) to 300°C. The cross-sectional scanning electron microscopy (SEM) observation and X-ray diffraction analyses showed that the FZO thin films were of polycrystalline nature with a preferential growth along (002) plane perpendicular to the surface of the glass substrate. Secondary ion mass spectrometry (SIMS) analyses of the FZO thin films showed that there was incorporation of F atoms in the FZO thin films, even if the substrate temperature was 300°C. Finally, the effect of substrate temperature on the transmittance ratio, optical energy gap, Hall mobility, carrier concentration, and resistivity of the FZO thin films was also investigated.     

ZnO薄膜光催化降解苯酚实验

采用溶胶-凝胶法分别在普通玻璃和石英玻璃基底上制备出性能优良的ZnO薄膜,并通过XRD、AFM和UV-V is吸收光谱对薄膜进行表征,进一步研究了不同波长紫外光照射、不同基底及不同退火温度对薄膜光催化性能的影响。实验结果表明,以石英为基底,退火温度为400℃的ZnO薄膜具有更好的光催化氧化能力,并且实现了催化剂的固载,便于回收再利用,催化效果显著。     

High thermoelectric performance of high-mobility Ga-doped ZnO films via homogenous interface design

Ga-doped ZnO (GZO) thin films grown on sapphire substrates have been widely investigated as a promising transparent thermoelectric (TE) material. However, due to the large lattice mismatch and thermal expansion between the sapphire substrate and GZO film, strain-induced lattice distortion impedes the transport of electrons, leading to low carrier mobility. In this study, ZnO homo-buffer layers with different thicknesses were inserted between sapphire substrates and GZO films, and their effect on the TE properties was investigated. A thin ZnO interlayer (10 nm) effectively reduced the lattice mismatch of the GZO film and improved the carrier mobility, which contributed to the large enhancement in the electrical conductivity. Simultaneously, energy filtering occurred at the interface between GZO and ZnO, resulting in a relatively high density of states (DOS) effective mass and maintaining a high Seebeck coefficient compared to that of the unbuffered GZO films. Consequently, the GZO film with a 10 nm thick ZnO buffer layer possessed a high power factor value of 449 μW m⁻¹ K⁻² at 623 K. This study provides a facile and effective method for optimizing the TE performance of oxide thin films by synergistically improving their carrier mobility and enhancing their effective mass.     

Effect of Au ion beam on structural,surface, optical and electrical properties of ZnO thin films prepared by RF sputtering

In the present work, ZnO thin films were irradiated with 700?keV Au⁺ ions at different fluence (1?× 10¹³, 1?× 10¹⁴, 2?× 10¹⁴ and 5?× 10¹⁴ ions/cm²). The structural, morphological, optical and electrical properties of pristine and irradiated ZnO thin films were characterized by X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR), scanning electron microscope (SEM), spectroscopy ellipsometry (SE) and four point probe technique respectively. XRD results showed that the crystallite size decreased from pristine value at the fluence 1?×?10¹³ ions/cm², with further increase of ion fluence the crystallite size also increased due to which the crystallinity of thin films improved. SEM micrographs showed acicular structures appeared on the ZnO thin film surface at high fluence of 5?×?10¹⁴ ions/cm². FTIR showed absorption band splitting due to the growth of ZnO nanostructures. The optical study revealed that the optical band gap of ZnO thin films changed from 3.08?eV (pristine) to 2.94?eV at the high fluence (5?× 10¹⁴ ions/cm²). The electrical resistivity of ZnO thin film decreases with increasing ion fluence. All the results can be attributed to localized heating effect by ions irradiation of thin films and well correlated with each other.     

ZnO及掺杂ZnO薄膜的研究进展

ZnO薄膜是一种Ⅱ~Ⅵ族的宽禁带半导体材料,具有优异的物理化学性能。通过对薄膜的掺杂,可以改善其性能或赋予其新的性能,使其应用更加广泛。作者综述了ZnO薄膜的制备方法,比较了各种制备方法的优缺点,重点探讨了ZnO及其掺杂薄膜在压电、光电、气敏及磁性能方面的研究,并对今后的研究方向进行了展望。     

真空蒸发制备ZnTe纳米薄膜

利用真空蒸发的方法制备ZnTe纳米薄膜,用X射线衍射仪、紫外可见分光光度计对薄膜的物相结构、光学特性进行了测试,用冷热探针、薄膜测厚仪、四探针电阻率测试仪对薄膜导电类型、厚度、折射率和电阻进行了测试。结果表明,当原子配比Zn∶Te=1∶0.7,热处理温度T=500℃时,可制备较理想的ZnTe多晶薄膜,薄膜的择优取向沿(111)晶向,光透射增加,薄膜的光学带隙为2.341eV.薄膜的导电类型为P型。折射率随波长的增加而减小。     

不同衬底上ZnO:Al透明导电薄膜的性能

室温下,采用射频磁控溅射法在玻璃和聚对苯二甲酸乙二醇酯（polyethylene terephthalate,PET）上沉积了掺铝的氧化锌（ZnO：Al,AZO）透明导电薄膜。通过X射线衍射仪分析不同衬底上AZO薄膜的结构,采用四探针测试仪及紫外可见光分光光度计测试薄膜的光电性能。结果表明：沉积在两种衬底上的AZO薄膜都具有六方纤锌矿结构,最佳取向均为[002]方向;玻璃衬底和PET衬底上制备的AZO薄膜的方阻分别为19/sq和45/sq,薄膜透光率均高于90%。实验表明,柔性衬底透明导电氧化物薄膜可以代替硬质衬底透明导电薄膜使电子器件向小型化、轻便化方向发展。     

Optical,electrical and morphological properties of transparent binary doped polyaniline thin films synthesized by in situ chemical bath deposition

The development of polymeric thin films has attracted attention in the optoelectronics field due to their transparency. The aim of the research presented was to obtain transparent polyaniline thin films by easy in situ oxidative polymerization of aniline with ammonium persulfate in the presence of a binary doping agent–poly(vinyl alcohol) mixture. Poly(acrylic acid), 2‐acrylamido‐2‐methyl‐1‐propanesulfonic acid or sodium dodecylsulfate were mixed with hydrochloric acid to form the binary doping agents. Polyaniline thin films were produced during aniline polymerization on Corning glass slides immersed in the mixture in order to study their optical, electrical and morphological properties. The optical absorption coefficient and the energy band gap were evaluated by optical transmission of the films in the UV‐visible spectral region. The optical absorption coefficient of all polyaniline films was of the order of 10⁴ cm^?1 with a maximum transmittance up to 80% at 550 nm. In order to investigate the effect of the mixture on the surface morphology and roughness of the films, atomic force microscopy was used. In general, surface roughness was reduced threefold by adding a mixture and optical transmission was increased by 20–30% without significantly affecting the absorption coefficient and the band gap of polyaniline. Islands and needle‐like structures on the film surfaces were obtained from various mixtures affecting the conductivity; for example, 0.17 S cm^?1 was obtained from needle‐like morphology, while 1.9 × 10^?4 S cm^?1 was obtained from island morphology. Raman spectroscopy studies confirmed the presence of poly(vinyl alcohol) in the thin films. Copyright © 2011 Society of Chemical Industry     

Effect of temperature and film thickness on structural and mechanical properties of c-axis oriented Zn0.95Mg0.05O thin films

Zn_0.95Mg_0.05O solutions were synthesized by the sol-gel technique using Zn and Mg-based alkoxide. The structure, microstructure, and mechanical properties of the c-axis oriented Zn_0.95Mg_0.05O thin films were investigated as a function of film thickness and temperature. Zn_0.95Mg_0.05O thin films were grown on a glass substrate using the sol-gel dip-coating method. Then, the thin films were annealed at various temperature values (500–600 °C for 30 min) under air. X-ray diffraction of the Zn_0.95Mg_0.05O thin films results indicated that all samples had a ZnO wurtzite structure and (002) orientation. The photoluminescence (PL) measurements revealed the near-band emission (NBE), the Zn_i related emission, and the excess oxygen interstitials and their complexes with zinc vacancies. The surface morphologies and microstructure of all samples were characterized by using Scanning Electron Microscope (SEM). It was observed that surface morphologies of Zn_0.95Mg_0.05O thin film were dense, uniform, crack free and without pinhole. Effects of film thickness and temperature on stress in Zn_0.95Mg_0.05O thin films were analyzed theoretically to see whether there was any crack inside of the thin films and substrate or not. It was found that the stress component values of thin films were compressive; however, for glass substrate they were tension.