Preparation of high-purity SiC ceramics with good plasma corrosion resistance by hot-pressing sintering

High-purity SiC ceramic devices are applied in semiconductor industry owing to their outstanding properties. Nevertheless, it is difficult to densify SiC ceramics without any sintering additive even by HP sintering. In this work, high-purity and dense SiC ceramics were fabricated by HP sintering with very low amounts of sintering aids. Residual B content was only 556 ppm and relative density was more than 99.5%. Furthermore, thermal conductivity of as-prepared SiC ceramics was improved from 155 W m^?1 K^?1 to 167 W m^?1 K^?1 by increasing holding time and their plasma corrosion resistance was promoted in the meantime. The as-prepared high-purity SiC ceramics have broad application prospects in the field of semiconductor industry.     

Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide

The evaporation of silicon carbide (SiC) ceramics during sintering has been studied by thermogravimetry in a graphite furnace filled with argon. The SiC powder compacts contained 7.5 wt% eutectic composition of Y₂O₃–Al₂O₃ to promote liquid-phase sintering. A weight loss of 1–11 wt% was observed during sintering, depending on the sintering temperature and sintering time. The weight loss severely influenced the final density and the microstructure of the SiC ceramics. Particularly, the oxide sintering aids, which were homogeneously distributed in the green ceramics, were observed to segregate and form particular patterns that were dependent on the temperature, sintering time, and the total weight loss. Possible heterogeneous reactions evolving volatile species have been discussed in relation to the experimental observations.     

Spark plasma sintering of TiN ceramics codoped with SiC and CNT

In this research, we investigated the effects of SiC and multi-walled carbon nanotube (MWCNTs) addition on the densification and microstructure of titanium nitride (TiN) ceramics. Four samples including monolithic TiN, TiN-5?wt% MWCNTs, TiN-20?vol% SiC and TiN-20?vol% SiC-5?wt% MWCNTs were prepared by spark plasma sintering at 1900?°C for 7?min under 40?MPa pressure. X-ray powder diffraction patterns and scanning electron microscope (SEM) micrographs of the prepared ceramics showed that no new phase was formed during the sintering process. The highest calculated relative density was related to the TiN ceramic doped with 20?vol% SiC, while the sample doped with 5?wt% MWCNTs presented the lowest density. In addition, the SEM investigations revealed that the addition of sintering aids e.g. SiC and MWCNTs leads to a finer microstructure ceramic. These additives generally remain within the spaces among the TiN particles and prohibit extensive grain growth in the fabricated ceramics.     

Effect of carbon content on electrical,thermal, and mechanical properties of porous SiC ceramics with B4C and C additives

The electrical, thermal, and mechanical properties of porous SiC ceramics with B₄C-C additives were investigated as functions of C content and sintering temperature. The electrical resistivity of porous SiC ceramics decreased with increases in C content and sintering temperature. A minimal electrical resistivity of 4.6 × 10^?2 Ω·cm was obtained in porous SiC ceramics with 1 wt% B₄C and 10 wt% C. The thermal conductivity and flexural strength increased with increasing sintering temperature and showed maxima at 4 wt% C addition when sintered at 2000 °C and 2100 °C. The thermal conductivity and flexural strength of porous SiC ceramics can be tuned independently from the porosity by controlling C content and sintering temperature. Typical electrical resistivity, thermal conductivity, and flexural strength of porous SiC ceramics with 1 wt% B₄C-4 wt% C sintered at 2100 °C were 1.3 × 10^?1 Ω·cm, 76.0 W/(m·K), and 110.3 MPa, respectively.     

Fabrication of SiC ceramics with invariable value resistivity in the range of 20–400 ℃ using MAX phase- Ti3AlC2 additives

SiC ceramics were fabricated by SPS sintering at 1850 ℃ with different amounts of Ti₃AlC₂. The effects of Ti₃AlC₂ content on the microstructure and electrical properties of the material were discussed. The densification and electrical properties of SiC ceramics have been improved by adding MAX phase Ti₃AlC₂. Ti₃AlC₂ decomposes to produce TiC and Al in the sintering process. The conductivity of SiC ceramics is elevated by TiC serving as a conductive second phase, and Al is dissolved into SiC lattice to promote the densification of SiC ceramics. With the addition of 15 wt% Ti₃AlC₂, the voltage-current curve of the sample changes from nonlinear to linear electrical characteristics with the resistivity dropping to 52 Ω cm. Moreover, the introduction of Ti₃AlC₂ reduces the temperature sensitivity of SiC ceramics. When the Ti₃AlC₂ content reaches 15 wt%, the resistivity of SiC ceramics remains relatively constant within the range of 20–400 ℃.     

Ceramic Coatings and Glass Additives for Improved SiC‐Based Filters for Molten Iron Filtration

Reticulated silicon carbide (SiC) ceramic filters are prepared with modified coatings in an attempt to improve mechanical properties of the sintered filter. Two classes of coatings are used: mixtures of non‐SiC ceramic and sintering aid and mixtures of SiC and glass. Various candidate ceramics, sintering aids, and glasses are screened. The most promising coatings are determined to be silica with 5 wt% bismuth oxide and SiC with ≤10 wt% Spruce Pine Batch glass. Filters with these coatings are prepared and subjected to mechanical abuse. Both coatings improve the ruggedness of the filter relative to the standard uncoated SiC type. Filters with <10 wt% glass additive were subjected to molten metal impingement and filtration of liquid gray iron at 1510°C. Those with 5 wt% glass or more softened during filtration. Those with 2.5 wt% glass or less survived without failure.     

Low-temperature preparation of porous SiC ceramics using phosphoric acid as a pore-forming agent and a binder

Porous SiC ceramics combine the properties of both SiC ceramics and porous materials. Herein, we design a facile method via pressureless sintering at relatively low temperatures for the synthesis of porous SiC ceramics. In the synthesis process, phosphoric acid was used as the sintering additive that reacted with SiO₂ on the surface of SiC to form phosphates. The formed phosphates acted as a binder to connect the SiC particles. At a fixed temperature, the phosphates were partially decomposed and released a large amount of gas. This changed the pore structure of the ceramics and greatly improved their porosity. Finally, we obtained the porous SiC ceramics with high porosity and high strength. We investigate the effects of H₃PO₄ content on the phase composition, microstructure, porosity, mechanical properties and thermal expansion coefficient of the prepared porous SiC ceramics. It was shown that at the sintering temperature of 1200 °C, the highest porosity of the samples can reach 70.42% when the H₃PO₄ content is 25 wt%, and their bending strength reaches 36.11 MPa at room temperature when the H₃PO₄ content is 15 wt%. In addition, the porous SiC ceramics show good high-temperature stability with a bending strength of 42.05 MPa at 1000 °C and the thermal expansion coefficient of 3.966 × 10⁻⁶/°C.     

Spark plasma sintering of graphene reinforced silicon carbide ceramics

Silicon carbide (SiC) ceramics have superior properties in terms of wear, corrosion, oxidation, thermal shock resistance and high temperature mechanical behavior, as well. However, they can be sintered with difficulties and have poor fracture toughness, which hinder their widespread industrial applications. In this work, SiC-based ceramics mixed with 1 wt% and 3 wt% multilayer graphene (MLG), respectively, were fabricated by solid-state spark plasma sintering (SPS) at different temperatures. We report the processing of MLG/SiC composites, study their microstructure and mechanical properties and demonstrate the influence of MLG loading on the microstructure of sintered bodies. It was found that MLG improved the mechanical properties of SiC-based composites due to formation of special microstructure. Some toughening mechanism due to MLG pull-out and crack bridging of particles was also observed. Addition of 3 wt% MLG to SiC matrix increased the Vickers hardness and Young's modulus of composite, even at a sintering temperature of 1700 °C. Furthermore, the fracture toughness increased by 20% for the 1 wt% MLG-containing composite as compared to the monolithic SiC selected for reference material. We demonstrated that the evolved 4H-SiC grains, as well as the strong interactions among the grains in the porous free matrices played an important role in the mechanical properties of sintered composite ceramics.     

Influence of SiC addition on tribological properties of SiAlON

The tribological properties of gas pressure sintered SiAlON and its composite with 18 wt% silicon carbide (SiC) against two different mating materials, i.e., alumina and SiAlON are evaluated. SiAlON and SiAlON–18%SiC composite ceramics were prepared by pressure less sintering and gas pressure sintering. Fretting wear tests were carried out under dry unlubricated ambient conditions (room temperature 23–25 °C; relative humidity 50–55%) with a load of 8 N for 45,000 cycles. Friction and wear properties of SiAlON–SiC proved better than the monolithic SiAlON. The formation of silica roll like structure on the composite worn surface was observed.     

Fabrication and properties of SiC porous ceramics using a polyurethane preparation process

SiC porous ceramics can be prepared by introducing the polyurethane preparation method into the production process of ceramic biscuits, followed by sintering at 1300?°C for 2?h under N₂ flux after the cross-linking of polycarbosilane at 220?°C for 4?h in air. The microstructures, mechanical properties and infiltrations of the SiC porous ceramics are investigated in detail. The best dispersal effect comes from the SiC slurry with xylene as the solvent and a mixture of Silok®7096 (1?wt%) and Anjeka®6041 (4?wt%) as the dispersant. The compressive strength of SiC porous ceramics with high porosity (69.53%) reaches 16.9?MPa. The heat treatment can increase infiltration, the rate of which (4.296?×?10^?7 mm²) after the heat treatment at 750?°C in air is approximately two times faster than that before the heat treatment. The SiC porous ceramics fabricated in this study will have potential application in active thermal protection systems.     

Improving specific stiffness of silicon carbide ceramics by adding boron carbide

A strategy for improving the specific stiffness of silicon carbide (SiC) ceramics by adding B₄C was developed. The addition of B₄C is effective because (1) the mass density of B₄C is lower than that of SiC, (2) its Young’s modulus is higher than that of SiC, and (3) B₄C is an effective additive for sintering SiC ceramics. Specifically, the specific stiffness of SiC ceramics increased from ~142 × 10⁶ m²?s^?2 to ~153 × 10⁶ m²?s^?2 when the B₄C content was increased from 0.7 wt% to 25 wt%. The strength of the SiC ceramics was maximal with the incorporation of 10 wt% B₄C (755 MPa), and the thermal conductivity decreased linearly from ~183 to ~81 W?m^?1?K^?1 when the B₄C content was increased from 0.7 to 30 wt%. The flexural strength and thermal conductivity of the developed SiC ceramic containing 25 wt% B₄C were ~690 MPa and ~95 W?m^?1?K^?1, respectively.     

High infrared emissivity of SiC-AlN ceramics at room temperature

SiC-AlN ceramics were fabricated by pressureless sintering with B₄C-C as sintering additives. The effects of AlN contents on infrared emissivity, thermal conductivity and electrical properties of SiC ceramics were investigated. The improvement of total emissivity is slight before 3 wt%AlN, but impressive after 3 wt%AlN. The significant increase of the emissivity for AlN content higher than 3 wt% could be explained via DFT calculation, that the impurity energy level formed by N atom doping into 4H-SiC and the lattice distortion are mainly responsible for it. Besides, the highest total emissivity is 0.775 when the content of AlN is 5 wt%. Additionally, more AlN solid solution results in a decrease in thermal conductivity and an enhancement in electrical resistivity. There is always a compromise among the three properties of SiC-AlN ceramics.     

Effect of sintering temperature on electrical properties of SiC/ZrB2 ceramics

SiC/20?wt% ZrB₂ composite ceramics were fabricated via pressureless solid phase sintering in argon atmosphere at different temperature. The effect of sintering temperature on microstructure, electrical properties and mechanical properties of SiC/ZrB₂ ceramics was investigated. Electrical resistivity exhibits twice significant decreases with increasing sintering temperature. The first decrease from 1900?°C to 2000?°C is attributed to the obvious decrease of continuous pore channels in as-sintered materials. The second decrease from 2100?°C to 2200?°C results from the improvement of carbon crystallization and the disappearance of amorphous layers enveloping ZrB₂ grains. Additionally, the increase of sintered density with increasing temperature caused greatly advance of flexural strength, elastic modulus and Vickers hardness. But excessive temperature is detrimental to flexural strength because of SiC grain growth.     

Erosion behavior of SiC–WC composites

Dense silicon carbide (SiC) ceramics were prepared with 0, 10, 30 or 50 wt% WC particles by hot pressing powder mixtures of SiC, WC and oxide additives at 1800 °C for 1 h under a pressure of 40 MPa in an Ar atmosphere. Effects of alumina or SiC erodent particles and the WC content on the erosion performance of sintered SiC–WC composites were assessed. Microstructures of the sintered composites consisted of WC particles distributed in the equi-axed grain structure of SiC. Fracture surfaces showed a mixed mode of fracture, with a large extent of transgranular fracture observed in SiC ceramics prepared with 30 wt% WC. Crack bridging by WC enhanced toughening of the SiC ceramics. A maximum fracture toughness of 6.7 MPa*m^1/2 was observed for the SiC ceramics with 50 wt% WC, whereas a high hardness of 26 GPa was obtained for the SiC ceramics with 30 wt% WC. When eroded at normal incidence, two orders of magnitude less erosion occurred when SiC–WC composites were eroded by alumina particles than that eroded by SiC particles. The erosion rate of the composites increased with increasing angle of SiC particle impingement from 30° to 90°, and decreased with WC reinforcement up to 30 wt%. A minimum erosion wear rate of 6.6 mm³/kg was obtained for SiC–30 wt% WC composites. Effects of mechanical properties and microstructure on erosion of the sintered SiC–WC composites are discussed, and the dominant wear mechanisms are also elucidated.     

Very Rapid Densification of Nanometer Silicon Carbide Powder by Pulse Electric Current Sintering

Rapid densification of a nanometer SiC powder doped with 2.04 wt% Al₄C₃ and 0.4 wt% B₄C was conducted by using a nonconventional sintering technique called pulse electric current sintering (PECS). In all experiments, the sintering temperature and applied pressure were kept to be 1600^oC and 47 MPa, respectively, while heating rates varied between 100^oC/min and 400^oC/min and the holding time was either 2 or 5 min. All of the specimens which were PECS-sintered under various conditions reached near-theoretical density. The microstructures of the rapidly densified SiC ceramics consisted of large elongated grains, and the grain size increased with the increase of heating rate. Polytype transformation of SiC occurred during the PECS process, where faster heating favored the formation of 6H polytype while slower heating favored 4H polytype.     

Joining of silicon carbide ceramics using a silicon carbide tape

This paper reports the joining of liquid-phase sintered SiC ceramics using a thin SiC tape with the same composition as base SiC material. The base SiC ceramics were fabricated by hot pressing of submicron SiC powders with 4 wt% Al₂O₃–Y₂O₃–MgO additives. The base SiC ceramics were joined by hot-pressing at 1800-1900°C under a pressure of 10 or 20 MPa in an argon atmosphere. The effects of sintering temperature and pressure were examined carefully in terms of microstructure and strength of the joined samples. The flexural strength of the SiC ceramic which was joined at 1850°C under 20 MPa, was 343 ± 53 MPa, higher than the SiC material (289 ± 53 MPa). The joined SiC ceramics showed no residual stress built up near the joining layer, which was evidenced by indentation cracks with almost the same lengths in four directions.     

不同助烧结剂及造孔剂对SiC多孔陶瓷的影响

采用真空烧结方法制备了SiC多孔陶瓷，研究了不同助烧结剂Al2O3-Y2O3、Si以及不同造孔剂丙烯酰胺聚合物、羧甲基纤维素（CMC）对SiC多孔陶瓷形貌和气孔率的影响。结果表明：与Si相比较，Al2O3-Y2O3更有利于促进SiC的烧结；以Al2O3-Y2O3为助烧结剂的试样比以Si为助烧结剂的试样具有较高的气孔率。     

Preparation and thermal stability investigation of Al2O3–mullite–ZrO2–SiC composite ceramics for solar thermal transmission pipelines

To obtain composite ceramics with excellent thermal shock resistance and satisfactory high?temperature service performance for solar thermal transmission pipelines, SiC additive was incorporated into Al₂O₃?mullite?ZrO₂ composite ceramics through a pressureless sintering process. The effect of the SiC additive on thermal shock resistance was studied. Also, the variations in the microstructure and physical properties during thermal cycles at 1300 °C were discussed. The results showed that both thermal shock resistance and thermal cycling performance could be improved by adding 20 wt% SiC. In particular, the sample with 50 wt% Al₂O₃, 35 wt% Coal Series Kaolin (CSK), 15 wt% partially yttria?stabilized zirconia (PSZ), and 20 wt% SiC additional (denoted as sample A2) exhibited the best overall performance after firing at 1600 °C. Furthermore, the bending strength of sample A2 increased to 124.58 MPa, with an increasing rate of 13.63% after 30 thermal shock cycles. The increase in thermal conductivity and the formation of mullite were the factors behind the enhancement of thermal shock resistance. During the thermal cycles, the oxidation of SiC particles was favorable as it increased the microstructure densification and also facilitated the generation of mullite, which endowed the composite ceramics with a self?reinforcing performance.     

Effects of porosity on electrical and thermal conductivities of porous SiC ceramics

The effects of porosity on the electrical and thermal conductivities of porous SiC ceramics, containing Y₂O₃–AlN additives, were investigated. The porosity of the porous SiC ceramic could be controlled in the range of 28–64 % by adjusting the sacrificial template (polymer microbead) content (0–30 wt%) and sintering temperature (1800–2000 °C). Both electrical and thermal conductivities of the porous SiC ceramics decreased, from 7.7 to 1.7 Ω⁻¹ cm⁻¹ and from 37.9 to 5.8 W/(m·K), respectively, with the increase in porosity from 30 to 63 %. The porous SiC ceramic with a coarser microstructure exhibited higher electrical and thermal conductivities than those of the ceramic with a finer microstructure at the equivalent porosity because of the smaller number of grain boundaries per unit volume. The decoupling of the electrical conductivity from the thermal conductivity was possible to some extent by adjusting the sintering temperature, i.e., microstructure, of the porous SiC ceramic.     

高纯镁砂及氧化镁陶瓷研究进展

高纯镁砂是重要的耐高温材料,氧化镁陶瓷则广泛应用于透光材料领域,对两种材料的生产工艺开展研究具有重要理论和实际意义。本文系统地综述了利用菱镁矿、卤水生产高纯氧化镁及镁砂的各种技术,以及氧化镁陶瓷的烧结方法和烧结助剂对烧结过程的影响;介绍了菱镁矿制备高纯镁砂,卤水沉淀法、卤水直接热解法制备高纯氧化镁,以及电熔法制备高纯镁砂等技术。指出了每种生产技术的优缺点及今后的研究与发展方向。介绍了常压烧结、热压烧结、热等静压烧结、放电等离子烧结、微波烧结和真空烧结等氧化镁陶瓷烧结技术及其进展,总结了烧结助剂对烧结过程的影响及其机理,指出氧化镁陶瓷未来的研究关键主要在于对粉体合成技术、致密化烧结技术及烧结助剂的研究。