基于IGBT开关暂态过程建模的功率变流器电磁干扰频谱估计

开关器件在开通和关断暂态过程产生的高电压和电流变化（dv/dt和di/dt）是高频电磁干扰的主要来源.提出一种基于IGBT开关暂态过程建模优化的电磁干扰频谱估计方法,建立了IGBT行为特性模型,分阶段研究了IGBT开通和关断的动态过程,用分段线性化方法模拟电压和电流的暂态波形,将非线性的开通和关断特征用多段dv/dt和di/dt组合描述.文中提出的方法提高了电磁干扰预测频谱在高频段的准确度,实验结果验证了方法的正确性.     

Si IGBT/SiC MOSFET混合器件及其应用研究

综述了Si IGBT/SiC MOSFET混合器件在门极优化控制策略、集成驱动设计、热电耦合损耗模型、芯片尺寸配比优化和混合功率模块研制等方面的最新研究成果与进展。Si IGBT/SiC MOSFET混合器件结合了SiC MOSFET的高开关频率、低开关损耗特性和Si IGBT的大载流能力和低成本优势,已有文献的最新研究和实验结果验证了该类器件的优异特性,表明其对高性能电力电子器件实现更高电流容量、更高开关频率和较低成本具有重要意义,是高性能变换器应用中非常有潜力的功率器件类型。     

Flexible dv/dt and di/dt control method for insulated gate power switches

Active gate control techniques are introduced in this paper for flexibly and independently controlling the dv/dt and di/dt of insulated gate power devices during hard-switching events. In the case of dv/dt control, the output voltage dv/dt can be controlled over a wide range by electronically adjusting the effective gate-to-drain (-collector) capacitance (i.e., Miller capacitance). For di/dt control, similar techniques are applied for electronically adjusting the output current di/dt over a wide range using voltage feedback from a small inductor connected in series with the switch's source (emitter) terminal. Both techniques are designed to maximize their compatibility with power module implementations that combine the power switch and its gate drive, including integrated circuit gate drives. Simulation and experimental results are included to verify the desirable performance characteristics of the presented dv/dt and di/dt control techniques.     

高频电源模块驱动电路设计

在IGBT的使用过程中,驱动电路选择的合理性和设计是否正确是影响其推广使用的问题之一。IGBT的通态电压、开关时间、开关损耗、承受短路能力以及dv／dt等参数均与门极驱动条件密切相关。因此,设计合理、性能优越的驱动电路是高频电源模块运行可靠的保证。本文介绍了驱动器M57962AL的特点以及选用该驱动器实现的IGBT驱动电路。     

寄生电感对于功率MOSFET开关特性的影响

分散在MOSFET栅极、源极、漏极的寄生电感由于封装以及印制电路板（PCB）走线,改变了MOSFET的开关特性。通过仿真分析对比,指出MOSFET寄生电感存在如下特性：源极电感对栅极驱动形成负反馈,导致开关速度变慢,采用开尔文连接,可以将栅极回路与功率回路解耦,提高驱动速度;在米勒效应发生时刻需要合理地降低栅极电感来降低栅极驱动电流;漏极电感通过米勒电容影响MOSFET的开通速度,在关断时刻导致电压应力增加;在并联的回路当中,非对称的布局将导致MOSFET之间的动态不均流;当MOSFET在开关过程中,环路电感与MOSFET自身的结电容产生振荡时,可以在电路增加吸收电容减小环路电感,改变振荡特性。     

A Novel Driving and Protection Circuit for Reverse-Blocking IGBT Used in Matrix Converter

A novel drive and protection circuit for reverse-blocking insulated gate bipolar transistor (RB-IGBT) is proposed in this paper. For the drive circuit, a dynamic current source is introduced to reduce the turn-on and turn-off transients. Meanwhile, the di/dt of the collector current and the dv/dt of the collector-emitter voltage are strictly restricted, so do the respective stresses. The drive circuit consists of a conventional push-pull driver and two controllable current sources-a current generator and a current sink. These two current sources work in switching transitions. For the protection circuit, a novel collector current detecting circuit suitable for RB-IGBT is proposed. This method detects the collector current by sensing collector-emitter voltage of the device. Further study shows that this method can be used to acquire the current signs in commutation transitions of matrix converter. A series of experiments has been carried out concerning the proposed drive and protection circuit and the experimental setup; results as well as detailed analysis are presented     

Filtering techniques to minimize the effect of long motor leads onPWM inverter-fed AC motor drive systems

In this paper, filtering techniques are investigated to reduce the motor terminal overvoltage, ringing, and dv/dt in inverter-fed AC motor drive systems where long leads are required. Analysis is presented to show that the distributed LC of a cable and the pulse-width modulated (PWM) inverter switching action lead to motor terminal voltage reflections and ringing that stress the turn insulation and contribute to bearing currents. First- and second-order shunt filter designs are analyzed and compared. Detailed design equations to match the filter impedance to the cable surge impedance and to determine the filter component values are presented. It is demonstrated that a first-order shunt filter connected at the motor terminals significantly reduces the overvoltage stress and ringing, and also lowers the dv/dt of the PWM switching pulse. Simulation and experimental results are presented to verify the proposed filter designs for 50-ft and 100-ft cable lengths for 460-V PWM insulated gate bipolar transistor (IGBT) AC motor drive systems     

PWM逆变器-感应电机驱动系统中接地电流EMI问题的分析

在IGBTPWM逆变器－感应电机驱动系统中，IGBT的高速开关动作产生很高的dv/dt|和|dt/dt|能够导致严重的电磁干扰（EMI）问题。研究表明不仅需要了解干扰的频谱。而且也必须知道它们的时域波形才能全面刻画干扰的本质。如何准确描述并分析这种问题是复杂而困难的，该文应用系统函数的方法来描述这种EI耦合通道的特征，并不需要对寄生电路进行复杂的参数提取，而且能准确预测了EMI的时域波形和频谱特性，接地电流脉冲峰值对应|dv/dt|的 峰值，导通时，|dv/dt|基本不随着负载电流的变化而变化，而关断时，负载电流越小，|dv/dt|越小，由于|dv/dt|在开通时的值要比关断时大得多，因此接地电流EMI问题主要由IGBT的开通决定。系统函数的幅度频谱呈现带通特性，尽管逆变器工作时其拓扑结构发生变化，但是对描述耦合通道的系统函数的影响很小，当三相桥臂的两个IGBT同时开通或同时关断时，接地电流加倍。     

Gate drive considerations for IGBT modules

The switching performance of an IGBT module depends upon the drive circuit characteristics and external DC loop inductance. This paper discusses the influence of these parameters on switching losses, diode recovery, switching voltage transients, short circuit operation, and dv/dt induced current. The paper is a tutorial and identifies trends. It is intended as an aid to the circuit designer, to help him apply the IGBT module to best advantage     

一种提高SiC MOSFET在高开关速率下栅极电压稳定性的驱动电路

高开关速率且栅极电压稳定的驱动是SiC MOSFET高频工作、进而实现功率变换系统小型化和轻量化的关键技术之一。针对如何在高开关速率下稳定驱动SiC MOSFET,并实现可靠的短路保护,根据栅源电压干扰的传导特点,基于辅助器件的跨导增益构建负反馈控制回路,提出一种SiC MOSFET栅极驱动,进而研究揭示该驱动的短路保护策略。首先,基于跨导增益负反馈构造栅极驱动电路并分析其工作原理;其次,研究该驱动的串扰抑制能力与短路保护特性;最后,通过实验证明基于跨导增益负反馈的栅极驱动电路的可行性,及其在串扰抑制和短路保护中的有效性。     

逆阻式IGBT的驱动保护电路及换流策略的研究)

针对逆阻式IGBT的开关特性，提出了数模混合式三段驱动电路。该驱动电路引入了可控的充、放电电流源，加快器件的开、关速度，而不增加开关过程产生的 与 。基于新颖的Vce电压检测方法，设计了过流保护电路，解决传统Vce检测方法不适应于逆阻式IGBT的问题。为了验证驱动保护电路的有效性以及逆阻式IGBT在矩阵变换器中应用的可行性，本文构建了一套AC-AC Buck斩波器，对双向开关的换流策略进行了研究与实验比较。     

IGBT模块栅氧老化机理分析与表征方法研究

绝缘栅双极型晶体管IGBT（insulated gate bipolar transistor）作为电力电子系统的核心器件,广泛应用于新能源发电、轨道机车牵引、电动汽车驱动以及航空航天等重要领域。栅氧层作为IGBT中相对薄弱的环节,如何准确地预测IGBT栅氧层老化状态成为学术界和工业界的研究热点。首先,分析IGBT栅氧层老化机理以及栅氧层老化对IGBT关断过程的影响,提出关断延迟时间td(off)作为IGBT栅氧层老化状态的状态参数。其次,建立IGBT栅氧层老化仿真模型,并对td(off)表征IGBT栅氧层老化状态进行仿真分析。最后,搭建了双脉冲实验平台,获得了栅氧层老化影响IGBT功率模块相关电气参数的实验结果,并与仿真结果进行了比较验证。实验结果证明td(off)可以有效地表征IGBT栅氧层老化状态。该研究对电力电子器件和装置的运行维护与状态预测具有重要的应用价值。     

Ratings of semiconductors for AC drives

This paper discusses the characteristics and limitations of various power semiconductors used in motor controls and drives. Semiconductor types discussed include the insulated gate bipolar transistor (IGBT), transistor (bipolar and MOS device), SCR, gate-turn-off transistor (thyristor) (GTO), and diode. Important limitations, including voltage rating, current ratings, safe operating area, heat transfer characteristics, and limitations due to a particular device characteristic are discussed. The focus is on the IGBT; its advantages and disadvantages are discussed, as well as how it can be rated in a drive application     

On-the use of IGBT-gated GTO-cascode switches in quasi-resonantconverters

The gate turn-off (GTO) thyristor has the highest voltage and current rating among the semiconductor power switches used extensively today. This paper documents the use of an insulated gate bipolar transistor (IGBT) to improve switching performance of a GTO in a cascode switch. The IGBT-gated GTO-cascode switch features simple drive requirement, fast switching, robustness, and overcurrent protection. The cascode switch was applied in a quasi-resonant buck converter and simulated on a computer using PSPICE. Results indicate that IGBT-gated GTO-cascode switches are promising candidates for high-power and high-frequency applications     

大电流下SiC MOSFET模块的暂态温度特性研究

由于碳化硅(SiC)的材料特性,在极端温度下,碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)相对传统硅基器件有突出优势。目前对SiC MOSFET暂态温度特性的研究,主要以单管小电流实验为主,大电流下暂态温度特性的研究还不充分。为分析和验证大电流下暂态温度这一特性,在理论分析的基础上,以CREE 1200 V/300 A半桥SiC MOSFET模块为研究对象,通过双脉冲测试平台研究SiC MOSFET模块及其驱动电路在不同温度环境下的暂态性能。对比分析了不同温度下开关时间、开关损耗、电应力及电流、电压过冲的差异,实验结果对SiC MOSFET模块在大电流下的选型和驱动设计具有一定的参考意义。     

驱动回路参数对碳化硅MOSFET开关瞬态过程的影响

在电力电子系统中,碳化硅(Si C)MOSFET的开关特性易受系统杂散参数的影响,表现为电磁能量脉冲形态属性的非理想特性,并进一步影响系统效率和可靠性。针对Si C MOSFET,首先分析控制脉冲、驱动脉冲及电磁能量脉冲三者间形态属性的关系,提取影响Si C MOSFET开关瞬态过程的关键参数,即开关过程中的dv/dt和di/dt。基于Si C MOSFET的开关过程,分析驱动回路参数对dv/dt和di/dt的影响,并通过PSpice仿真及搭建Si C MOSFET双脉冲测试实验平台进行分析和比较。在此基础上,对基于驱动回路参数的瞬态控制方法进行对比分析,为实际应用中对Si C MOSFET的开关特性改善提供重要的理论基础。     

组合式绝缘栅双极晶体管的工作原理与特性

提出了一种新型MOS控制晶闸管,即组合式绝缘栅双极晶体管(CIGBT),它通过在公共的n阱和P阱内部串联MOSFET的阴极单元而形成.而n阱和P阱可产生一个特有的自箝位特征,可保证阴极免受任何过电压的冲击,进一步改善了其安全工作范围.仿真实验结果证明,CIGBT可大大改善IGBT的通态特性和开关性能.     

基于无磁芯变压器的IGBT/MOSFET隔离驱动技术

本文分析了开关电源中大功率器件栅极驱动的必要性和以往运用光电耦合器和脉冲变压器实现MOSFET/IGBT隔离驱动的优缺点,介绍了一种新颖的隔离驱动技术——基于无磁芯变压器的IGBT/MOSFET隔离驱动技术,分析了无磁芯变压器技术的原理及脉冲信号的传输,最后给出了它的一个应用实例。     

碳化硅MOSFET与硅MOSFET的应用对比分析

碳化硅MOSFET具有导通电压低、开关速度极快、驱动能力要求相对低等特点,是替代高压硅MOSFET的理想器件之一。将额定电压、电流相同的碳化硅MOSFET和高性能硅MOSFET应用于反激式变换器中进行对比测试,实验结果表明,在相同的驱动条件和负载条件下,碳化硅MOSFET的开关速度明显快于硅MOSFET;在12 V驱动电平条件下,直接采用碳化硅MOSFET替代硅MOSFET使得变换器的效率明显提升;采用20 V栅极驱动电平,效果更加明显。     

现代变频调速系统负面效应及其对策研究

变频器在工农业，国防等领域做出了巨大的贡献的同时，也产生了显著的负面效应。现代电力电子器件的飞速发展，功率开关器件的快速导通或关断特性将使逆变器的输出产生很高的dv/dt。dv/dt过高将对变频器驱动系统产生一系列危害，如增大了电机内部的功率损耗；加快了电机轴承的损坏速度；对电源产生强烈的电磁干扰；还会引起电机保护电路的误动作；当电机和变频器之间不可避免地采用长线电缆连接时，还会在电机端出现过电压现象，这种现象不但使上述负面影响进一步恶化，还使电机绝缘提早老化，甚至被击穿，缩短了电机的使用寿命。本文分析了变频器输出负面效应产生的本质，对减小或消除这些危害所采取的不同方案进行了评价，提出了一种新颖的消除这些危害的有效方案。