Localized thermal processing with a laser‐trapped and heated metal nanoparticle

We report localized thermal processing using a laser‐trapped and heated metal nanoparticle. A metal nanoparticle trapped by a focused, continuous wave (CW), near‐infrared laser was heated by photothermal conversion and acted as a remotely controllable nanosized thermal tool for processing a workpiece. We demonstrated the processing of a glass substrate with an optically trapped gold nanoparticle (diameter 200 nm) irradiated by a Nd:YAG laser (λ = 1.064 µm, CW). Laser irradiation caused local melting of the substrate and a crater‐like nanosized imprint on the substrate, demonstrating thermal nanoprocessing of an optically transparent material. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Low‐temperature direct bonding of poly(methyl methacrylate) for polymer microchips

A low‐temperature, direct bonding method for poly(methyl methacrylate) (PMMA) plates has been developed by employing surface treatment by atmospheric pressure oxygen plasma, vacuum oxygen plasma, ultraviolet (UV)/ozone or vacuum ultraviolet (VUV)/ozone. Reasonable bonding strength, as evaluated by a tensile test, was achieved below the glass transition temperature (T_g). The highest bonding strength among the achieved results is 1.43 MPa (about three times the value for conventional direct bonding) at an annealing temperature of 50 °C and an applied pressure of 2.5 MPa for 10 min. Low‐temperature bonding prevents deformation of the PMMA microstructure. A prototype PMMA microchip that has fine channels of 5 µm depth was fabricated by hot‐embossing using a Si mold. After atmospheric pressure oxygen plasma activation, direct bonding was carried out at an annealing temperature of 75 °C and an applied pressure of 3 MPa for 3 min. The method gives good bonding characteristics without deformation and leakage. This low‐temperature bonding technology can be applied to polymer micro/nano structures. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Influence of Gas Flow Ratio in PE‐CVD Process on Mechanical Properties of Silicon Nitride Film

This paper investigates the influence of gas flow ratio in the preparation of submicron‐thick silicon nitride (SiN_x) films on their elastic properties. SiN_x films with a thickness ranging from 0.14 to 0.69 µm were deposited by plasma‐enhanced chemical vapor deposition (PE‐CVD) onto 10‐µm‐thick single‐crystal silicon (SCS) specimens by changing the gas flow ratio of monosilane (SiH₄) to ammonia (NH₃) to nitrogen (N₂). A uniaxial tensile tester operated under an atomic force microscope (AFM) characterized the Young's modulus of SiN_x films and the fracture strength of SiN_x/SCS laminated specimens. The Young's modulus of SiN_x films ranged from 99.5 to 144.3 GPa, which increased with the gas flow ratio but was independent of the film thickness. Nano‐indentation tests were also carried out to examine the Poisson's ratio of SiN_x films in addition to the tensile tests. The Poisson's ratio was found to be 0.19 to 0.27, on average. Auger spectroscopy revealed that an increase of the atomic content ratio of nitrogen (N) to silicon (Si) in SiN_x films yielded higher elastic constants of the films. © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Cell adhesion characteristics of chemically modified silicon nitride surfaces

We investigated the fundamental characteristics of cell adhesion during cell culture on the Si₃N₄ surface for using it as the gate insulator in field‐effect devices. The culture medium and the surface condition of Si₃N₄ were controlled for cell culture on the Si₃N₄ substrate. When we measure electrical characteristics of cell adhesion and cell function using field‐effect devices, we require a stable measurement of the electrical signals. The serum in the culture medium includes a number of proteins, which cause instability of the potential behavior. In this paper, we show that the cell‐adhesive molecules on the Si₃N₄ surface used as a gate insulator should be designed and controlled when cell culture is performed in the culture medium without the serum. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Low cross talk design and simple fabrication process of electrostatic vertical comb‐drive actuators for positioning application

In this paper, different types of vertical electrostatic comb‐drive actuators are proposed. The aim of design is to minimize the cross talk between vertical and lateral motions with a relatively simple fabrication process, namely, with only two ICP‐RIE steps from the front side with layered masks. Three designs are analyzed by MEMCAD, a finite‐element modeling package, combined with a micromachining process simulator. After optimization based on the calculation, all types were fabricated and tested. The experimental results are qualitatively in good agreement with the calculations. Because of the excess undercutting in our ICP‐RIE machine, the supports were softer than designed. The displacement was larger than expected. According to obtained results, we can expect to generate a vertical force of 0.5 µN per tooth at around 50 V. The measured cross talk between vertical motion and the horizontal motion was 20%. The resonant frequency of a typical device is 9 kHz and the displacement is 1.5 µm at 50 V. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

A 5‐MHz AT‐cut quartz crystal oscillating circuit functioning in 350 nA

An oscillating circuit functioning at ultra low power (350 nA) for a 5‐MHz AT‐cut quartz crystal oscillator was investigated. This circuit has a resistance between the power terminal of the CMOS‐IC and the power supply, and another between the earth terminal of the CMOS‐IC and the ground (GND). These resistances discourage an inrush of current, and set a gain (g_m) necessary for oscillating the circuit at minimum. The developed circuit is quite simple, but enables driving at once‐unthinkable, low power (below 1 µA). © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Design and modeling of compliant micromechanism for mechanical digital‐to‐analog conversion of displacement

A microelectromechanical digital‐to‐analog converter (MEMDAC) converts digital motion of shuttle actuators operated by the corresponding bits of a binary code into an output displacement proportional to the analog value represented by the input code. In this paper a MEMDAC with improved kinematic design is devised that allows large travel range and high positioning resolution while making the microfabrication process less critical. A lumped‐parameter model of the compliant mechanism of an N‐bit MEMDAC is derived and used to determine the stiffness ratio of flexible members needed for proper mechanical digital‐to‐analog conversion. Furthermore, we analytically investigated the effect of nonuniformity in the device geometry due to the limitations of the microfabrication processes on the linearity of the output displacement. Successful fabrication and release of a 12‐bit MEMDAC demonstrated the manufacturability of the new mechanism, revealing opportunities for MEMS applications in which micropositioners with open‐loop operation, relatively large output range, fine positioning resolution and high repeatability are required. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Materials,effects and components for tunable micro‐optics

An overview of recent activities in the area of tunable micro‐optical components is given. These include polymer‐based deformable mirrors for adaptive optics, tunable microlenses and arrays using fluids and membranes, pneumatically actuated scanning micromirrors and tunable Bragg filters and mirrors using swelling polymers. For each device, the structure, essential fabrication technology and optical characteristics, as well as a discussion of application areas are presented. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Fabrication of high‐quality two‐dimensional photonic crystals based on porous alumina

We fabricated porous alumina templates with a well‐ordered pore array by a pre‐triggered anodization method. The arrangement of pores in the fabricated templates was set by a Ni‐dot stamper. The structure of the templates was analyzed by field emission scanning electron microscopy (FESEM), two‐dimensional Fourier transformation of FESEM images and optical means. It was found that the porous alumina templates have a high‐quality, extended, two‐dimensional hexagonal lattice, which can be used in the fabrication of two‐dimensional magnetophotonic crystals (2D‐MPCs). © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

In situ visualization of degradation of silicon field emitter tips

This paper deals with the simultaneous observation of both the electron field emission from nanoscopic tips by electrical means and their structural shape change by an ultra‐high resolution transmission electron microscope (TEM). Nanoneedles with sharp tips of radius in the nanometer range were fabricated with semiconductor micromachining technology. A correlation between the electron field emission characteristics and the structural change of the emitter tip was clearly observed. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Process variation compensation technique for voltage‐controlled ring oscillator

A voltage‐controlled ring oscillator with process variation compensation circuits is designed using 0.25 µm CMOS technology. The simulation results show that the proposed ring oscillator increases the guaranteed frequency tuning range by 12% compared to a conventional ring oscillator. Copyright © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Basic study of high‐frequency carrier‐type magnetic field sensor using shape anisotropy

We tried to control the magnetic anisotropy of a high‐frequency carrier‐type magnetic field sensor by the shape of the magnetic film instead of induced anisotropy. We confirmed that the impedance of the sensor could be changed by applying a magnetic field. In addition, we tried to control the magnetic anisotropy with magnetostatic energy. We show that the properties of the sensor can be controlled by designing the shape of the magnetic film. © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Pressure sensing by electrical admittance measurement of a comb‐drive actuator

This paper describes a micromachined pressure sensor that senses pressure not by a diaphragm structure but by a resonantly vibrating comb‐drive actuator. The electrical admittance of the comb‐drive actuator was directly measured using a lock‐in amplifier, and its pressure dependence was examined. From the experiment, it was found that the resonant frequency of the comb‐drive actuator gradually drops as the pressure increases. The sensitivity of the comb‐drive actuator as a pressure sensor was 0.34 Hz/MPa at atmospheric pressure and 0.1 Hz/MPa at 0.4 MPa absolute pressure. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Output characteristics model for an a‐Si ISFET pH sensor

A mathematical model for the calculation of the output characteristics of amorphous silicon hydrogenated (a‐Si:H) ion‐sensitive field‐effect transistors (ISFET) is developed, which depends on the integration of the conductivity channel versus gate voltage curve at fixed drain voltage. Single curve integration was changed to integration with many simple lines to obtain the I_D − V_D characteristics using computer programming. The results of this model were tested with those of experiments. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Surface modifications of aligned carbon nanotube thin films by Argon‐ion sputtering

To use carbon nanotubes (CNTs) as anode material for the solid‐state thin‐film Li‐ion rechargeable battery, the tubes are preferred to be aligned perpendicular to a substrate and the CNT thin film to have a smooth surface. Using an Ar‐ion sputtering technique, we carried out the surface modifications of the CNT thin film prepared by the SiC surface decomposition method. In order to evaluate the surface modification, the surface and cross section of the modified CNT film were investigated by field‐emission scanning electron microscopy and atomic force microscopy. © 2012 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

TEM observations of magnetic domains and grain boundaries on spin‐sprayed ferrite films exhibiting high permeability usable for gigahertz noise suppressors

Lorentz TEM observations of magnetic domain wall motion, as well as TEM observations of grain boundaries, were performed on spin‐sprayed ferrite films #1 (Ni_0.17Zn_0.22Fe_2.61O₄) and #2 (Ni_0.19Zn_0.20Co_0.03Fe_2.58O₄), both 0.5 µm in thickness. They exhibit much higher natural resonance frequencies than the bulk ferrite and thus have been applied to gigahertz noise suppressors. Films #1 and #2 exhibit prominent and weak in‐plane uniaxial magnetic anisotropy, respectively, which is induced along the liquid flow direction during spin‐spraying. Both films have columnar crystallites with 100‐200 nm widths aligned perpendicular to the film plane, and the boundaries of the crystallites have no pores or impurity phases. Therefore, the crystallites are magnetically exchange‐coupled, which is responsible for the unusually high permeability and high natural resonance frequencies of the films. Under zero bias magnetic field, film #1 exhibits mosaic‐shaped magnetic domains, whereas film #2 exhibits magnetic domains elongated along the easy magnetization axis, both several hundred nanometers in width. For both films the domain structure remains unchanged when an in‐plane bias DC magnetic field,H_dc, of up to 10 Oe is applied along the hard axis. Under a stronger H_dc, the domain structure prominently changes, and the domain walls disappear when H_dc exceeds ∼100 Oe. This confirms our previous finding that the initial permeability is ascribed only to magnetization rotation, with no contribution from domain wall motion [J. Magn. Magn. Mater., 278 , 256 (2004)]. © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

A behavioral model for optically powered OCT endoscope with a micro electrostatic vertical‐comb optical scanner

This paper presents a novel device architecture for optically actuated microelectromechanical systems (MEMS) endoscopes for optical coherence tomography (OCT) measurement. A 10‐mW infrared light beam at a wavelength of 1.5 µm is transferred through the single‐mode fiber to provide a scanning MEMS mirror with the drive voltage (maximum 11 V) by exciting a photovoltaic cell, while also providing with a secondary light beam at a wavelength of 1.3 µm for the OCT measurement. An electrostatic vertical comb‐drive optical scanner (1.5 mm × 2.0 mm × 0.5 mm) has been developed by using the deep reactive ion etching (DRIE) of a silicon‐on‐insulator (SOI) wafer. The design of the scanner module is discussed, along with the experimental results of electrostatic operation. An equivalent circuit model for the optical scanner is developed to explain the behavior of the optically powered actuation mechanism, including the hysteresis loop in the frequency response and the voltage dependence of oscillating angle (mechanical peak ±3.2°/7 V around the resonance frequency of 250 Hz). OCT measurement of a tissue is demonstrated to reconstruct the cross‐sectional image of a fingerprint at a resolution of lateral 40 µm × vertical 8 µm and penetration depth of 2.5 mm. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

CMOS high‐precision loser‐take‐all circuit

This paper presents a new current‐mode CMOS loser‐take‐all circuit. The proposed circuit consists of a basic cell that allows implementation of a multi‐input configuration by repeating the cell for each additional input. A high‐speed feedback structure is employed to determine the minimum current among the applied inputs. The significant feature of the circuit is its high accuracy and high‐speed operation. Additionally, the input dynamic range of the circuit can be efficiently controlled via the biasing current. HSPICE simulation results are presented to verify the performance of the circuit, where under a supply voltage of 2.5 V, bias current of 100 µA, and frequency of 10 MHz, the input dynamic range increases within 0–100 µA and the corresponding error remains as low as 0.4%. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

PLZT films prepared by aerosol deposition and their birefringence evaluation

Pb_0.91La_0.09(Zr_0.65Ti_0.35)O₃ (PLZT) films were prepared by the aerosol deposition method (ADM) and their optical and electro‐optic (EO) properties investigated for application to hologram optical switch. We found that a higher transmittance of the films was obtained with smaller particles. The transmittance of the PLZT film deposited with particles of 0.2 µm average diameter, the smallest size in this experiment, was nearly 100%, showing that the PLZT film deposited by aerosol deposition can be applied to practical optical devices. We evaluated the birefringence shift of the film to make the EO performance clear. © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Stochastic H∞ control problem with state‐dependent noise for weakly coupled large‐scale systems

In this paper, stochastic H_∞ state feedback control with state‐dependent noise for weakly coupled large‐scale systems is discussed. After establishing the asymptotic structure of the stochastic algebraic Riccati equation (SARE), a new iterative algorithm that combines the Newton's method with the fixed‐point algorithm is derived for the first time. As a result, both the quadratic convergence and the reduced‐order computation in the same dimension of the subsystems are attained. Copyright © 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.