Controlled synthesis and gas-sensing properties of hollow sea urchin-like α-Fe2O3 nanostructures and α-Fe2O3 nanocubes

Hollow sea urchin-like α-Fe₂O₃ nanostructures were successfully synthesized by a hydrothermal approach using FeCl₃ and Na₂SO₄ as raw materials, and subsequent annealing in air at 600 °C for 2 h. The hollow sea urchin-like α-Fe₂O₃ nanostructures with the diameters of 2–4.5 μm consist of well-aligned α-Fe₂O₃ nanorods with an average length of about 1 μm growing radially from the centers of the nanostructures, have a hollow interior with a diameter of about 2 μm. α-Fe₂O₃ nanocubes with a diameter of 700–900 nm were directly obtained by a hydrothermal reaction of FeCl₃ at 140 °C for 12 h. The response S_r (S_r = R_a/R_g) of the hollow sea urchin-like α-Fe₂O₃ nanostructures reached 2.4, 7.5, 5.9, 14.0 and 7.5 to 56 ppm ammonia, 32 ppm formaldehyde, 18 ppm triethylamine, 34 ppm acetone, and 42 ppm ethanol, respectively, which was excess twice that of the α-Fe₂O₃ nanocubes and the nanoparticle aggregations. Our results demonstrated that the hollow sea urchin-like α-Fe₂O₃ nanostructures were very promising for gas sensors for the detection of flammable and/or toxic gases with good-sensing characteristics.     

New gas sensitive MIS structures Pt/Al2O3(M = Pt, Rh)/Si with a granular dielectric layer

New gas sensitive MIS structures Pt/Al₂O₃(M)/p-Si, where M = Pt, Rh, with granular dielectric Al₂O₃ layers doped with noble metals were obtained by an aerosol pyrolysis method. Surface morphology and composition of the structures were studied by TEM, AFM and EPMA. Sensor properties of the MIS structures were studied towards reducing gases (1000 ppm H₂, 300 ppm CO, 1000 ppm CH₄ in air) at 100 and 200 °C. The Pt/Al₂O₃(M = Pt, Rh)/Si structures showed a very high sensor response to reducing gases. A shift of C–V characteristics was up to 2.5 V under CO, 2.2 V under hydrogen and 0.7 V under methane. High values of shift of C–V curves can be related with cooperative influence of a change of surface state density in dielectric layer, reduction of platinum electrode and dipole layer formation.     

Preparation and characterization of unimorph actuators based on piezoelectric Pb(Zr0.52Ti0.48)O3 materials

This paper describes the preparation and characterization of unimorph actuators for deformable mirrors, based on Pb(Zr_0.52Ti_0.48)O₃ (PZT52) thin film. As comparison, two different designs, where the PZT layer in the unimorph actuators was driven by either interdigitated electrodes (IDT-mode) or parallel plate electrodes (d₃₁-mode), were investigated. The actuators utilize a unimorph membrane (diaphragm) structure consisting of an active PZT piezoelectric layer and a passive SiO₂/Si composite layer. To fabricate the diaphragm structures, n-type (1 0 0) silicon-on-insulator (SOI) wafers with 1 μm thermal SiO₂ were used as substrates (for d₃₁-mode actuators, the upper Si part of SOI need to be heavily doped and used as bottom electrodes simultaneously). Sol-gel derived PZT piezoelectric layers with PbTiO₃ (PT) bufferlayer in total of 0.86 μm were then fabricated on them, and 0.15 μm Al reflective layers were deposited and patterned into top electrode geometries, subsequently. The diaphragms were released using orientation-dependent wet etching (ODE) with 5-10 μm residual silicon layers. The complete unimorph actuators comprise 4 × 4 discrete units (4 mm² in size) with patterned PZT films for parallel plate configuration or 3 × 3 individual pixels (2 mm in IDT diameter) with continuous PZT films in graphic region for IDT configuration. The measurement results indicated that both of the two configurations can generate considerable deflections at low voltage. The measured maximum central deflections at 15 V were approximately 2.5 μm and 2.8 μm, respectively. The intrinsic strain conditions shaping the deflection profiles for the diaphragm actuators were also analyzed. In this paper, the behaviors of clamped parallel plate configuration without a diaphragm were also evaluated.     

Single-crystalline Te microtubes: Synthesis and NO2 gas sensor application

Tellurium tubular crystals were grown by direct thermal evaporation of tellurium metal in an inert atmosphere on quartz substrates at ambient pressure without employing any catalyst. Tellurium powder was evaporated by heating at 600 °C and was condensed at a substrate temperature of 300–350 °C in the downstream of argon gas at a flow rate of 100 mL/min. The structure and chemical composition of the as-synthesized samples were examined by X-ray diffraction analysis, scanning electron microscopy, energy-dispersive X-rays microanalysis and micro-Raman spectroscopy. Scanning electron microscopy images and X-ray diffraction patterns showed that the as-synthesized Te had a tubular single-crystalline morphology with a hexagonal cross-section. The Te microtubes were typically 0.5–6 mm long, 30–70 μm in external diameter, and 5–20 μm thick. NO₂ gas-sensing properties of the Te microtubes at room temperature were also investigated. They showed a promising sensitivity and response towards tested gas.     

Completeness of Continuation Models for λμ-Calculus

We show that a certain simple call-by-name continuation semantics of Parigot's λ_μ-calculus is complete. More precisely, for every λ_μ-theory we construct a cartesian closed category such that the ensuing continuation-style interpretation of λ_μ, which maps terms to functions sending abstract continuations to responses, is full and faithful. Thus, any λ_μ-category in the sense of L. Ong (1996, in “Proceedings of LICS '96,” IEEE Press, New York) is isomorphic to a continuation model (Y. Lafont, B. Reus, and T. Streicher, “Continuous Semantics or Expressing Implication by Negation,” Technical Report 93-21, University of Munich) derived from a cartesian-closed category of continuations. We also extend this result to a later call-by-value version of λ_μ developed by C.-H. L. Ong and C. A. Stewart (1997, in “Proceedings of ACM SIGPLAN-SIGACT Symposium on Principles of Programming Languages, Paris, January 1997,” Assoc. Comput. Mach. Press, New York).     

Potentiometric VOC detection in air using 8YSZ-based oxygen sensor modified with SmFeO3 catalytic layer

Potentiometric oxygen sensor was fabricated and applied to detect several volatile organic compounds (VOCs; acetic acid, methylethylketone (MEK), ethanol, benzene, toluene, o- and p-xylene) at sub-ppm levels in the temperatures range of 400–500 °C. The electromotive force (EMF) linearly changed with the logarithm of VOC concentration. Especially for ethanol and MEK, the sensitivity and EMF at 1 ppm were distinctly lowered for the sensor with the SmFeO₃ coated Pt working electrode. It seems that ethanol and MEK were more easily oxidized on the SmFeO₃ surface than the other VOCs. A discriminative detection of ethanol and MEK apart from the others could be achieved with the combination of two types of the sensors, Pt|8YSZ|Pt(ref.) and SmFeO₃/Pt|8YSZ|Pt(ref.).     

Analysis of interface states of metal–insulator–semiconductor photodiode with n-type silicon by conductance technique

A metal–insulator–semiconductor photodiode (MIS-PD) as active layer with n-type silicon as interdigitated Schottky electrodes has been fabricated. The current–voltage characteristics, density of interface states and photovoltaic properties of the MIS-PD diode have been investigated. The diode has a metal–insulator–semiconductor configuration with ideality factor higher than unity. The electronic parameters (ideality factor, series resistance and barrier height) of the diode were found to be 1.94, 2.23 × 10⁴ Ω and 0.74, respectively. At voltages between 0.13 and 0.50 V, the charge transport mechanism of the diode is controlled by space charge-limited current mechanism. The interface state density of the diode was found to vary from 5.54 × 10¹² to 5.67 × 10¹² eV⁻¹ cm⁻² with bias voltage. The Au/SiO₂/n-Si/Al device shows a photovoltaic behavior with a maximum open circuit voltage V_oc of 97.7 mV and short-circuit current I_sc of 17.4 μA under lower illumination intensities. The obtained electronic parameters confirm that the Au/SiO₂/n-Si/Al diode is a MIS type photodiode.     

A Novel Stochastic Game Via the Quantitative μ-calculus

The quantitative μ-calculus qMμ extends the applicability of Kozen's standard μ-calculus [D. Kozen, Results on the propositional μ-calculus, Theoretical Computer Science 27 (1983) 333–354] to probabilistic systems. Subsequent to its introduction [C. Morgan, and A. McIver, A probabilistic temporal calculus based on expectations, in: L. Groves and S. Reeves, editors, Proc. Formal Methods Pacific '97 (1997), available at [PSG, Probabilistic Systems Group: Collected reports, http://web.comlab.ox.ac.uk/oucl/research/areas/probs/bibliography.html]; also appears at [A. McIver, and C. Morgan, “Abstraction, Refinement and Proof for Probabilistic Systems,” Technical Monographs in Computer Science, Springer, New York, 2005, Chap. 9], M. Huth, and M. Kwiatkowska, Quantitative analysis and model checking, in: Proceedings of 12th annual IEEE Symposium on Logic in Computer Science, 1997] it has been developed by us [A. McIver, and C. Morgan, Games, probability and the quantitative μ-calculus qMu, in: Proc. LPAR, LNAI 2514 (2002), pp. 292–310, revised and expanded at [A. McIver, and C. Morgan, Results on the quantitative μ-calculus qMμ (2005), to appear in ACM TOCL]; also appears at [A. McIver, and C. Morgan, “Abstraction, Refinement and Proof for Probabilistic Systems,” Technical Monographs in Computer Science, Springer, New York, 2005, Chap. 11], A. McIver, and C. Morgan, “Abstraction, Refinement and Proof for Probabilistic Systems,” Technical Monographs in Computer Science, Springer, New York, 2005, A. McIver, and C. Morgan, Results on the quantitative μ-calculus qMμ (2005), to appear in ACM TOCL] and by others [L. de Alfaro, and R. Majumdar, Quantitative solution of omega-regular games, Journal of Computer and System Sciences 68 (2004) 374–397]. Beyond its natural application to define probabilistic temporal logic [C. Morgan, and A. McIver, An expectation-based model for probabilistic temporal logic, Logic Journal of the IGPL 7 (1999), pp. 779–804, also appears at [A. McIver, and C. Morgan, “Abstraction, Refinement and Proof for Probabilistic Systems,” Technical Monographs in Computer Science, Springer, New York, 2005, Chap.10]], there are a number of other areas that benefit from its use.One application is stochastic two-player games, and the contribution of this paper is to depart from the usual notion of “absolute winning conditions” and to introduce a novel game in which players can “draw”.The extension is motivated by examples based on economic games: we propose an extension to qMμ so that they can be specified; we show that the extension can be expressed via a reduction to the original logic; and, via that reduction, we prove that the players can play optimally in the extended game using memoryless strategies.     

Effect of electrode size and silicon residue on piezoelectric thin-film membrane actuators

Piezoelectric micro-electromechanical systems (MEMS) often adopt a membrane structure to facilitate sensing or actuation. Design parameters, such as membrane size, thickness of the piezoelectric thin film, and electrode types, have been studied to maximize actuation, sensitivity, or coupling coefficient. This paper is to demonstrate numerically and experimentally that the size of silicon residue and its relative size to the top electrode are two critical yet unrecognized parameters in maximizing the actuation displacement of PZT thin-film membrane actuators. To study effects of the silicon residue, we have developed a finite element model using ANSYS. The model consists of five components: a square passive silicon membrane, a silicon substrate, a PZT thin film, a square top electrode, and a silicon residue region. In particular, the silicon residue has a circular inner diameter and a square outer perimeter with a trapezoidal cross section. Predictions of the finite element model lead to several major results. First, when the silicon residue is present, there exists an optimal size of the top electrode maximizing the actuator displacement. Second, the optimal electrode size is roughly 50–60% of the inner diameters of the silicon residue. The displacement of the membrane actuator declines significantly as the electrode overlaps with the silicon residue. Third, the maximal actuator displacement decreases as the inner diameter of the silicon residue decreases. Aside from the finite element analysis, a mechanics-of-material model is also developed to predict the electrode size that maximizes the actuator displacement. To verify the simulation results, eight PZT thin-film membrane actuators with progressive electrode sizes are fabricated. These actuators all have a square membrane of 800 μm × 800 μm with the inner diameter of the silicon residue controlled between 500 and 750 μm. A laser Doppler vibrometer is used to measure the actuator displacements. The experimental measurements confirm that there exists an optimal size of the top electrode maximizing the actuator displacement.     

Improved field emission characteristics of screen-printed CNT-FED cathode by interfusing Fe/Ni nano-grains

Carbon nanotube (CNT) cathode with and without interfusing nano-metal particles was prepared using screen-printing technology. For the good electric conductivity of metal, the turn-on electric field of the Fe/Ni and CNT composite film (Fe/CNT film) decreases to 1.42 V/μm comparing with the usual CNT film of 2.45 V/μm, and the emission current increases from 60 μA to 440 μA at an applied electric field of 2.3 V/μm. Furthermore, the field enhancement factor β increases from 1721 to 3242. By characterizing the prepared samples via X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM), it is found that carbide Fe₃C phase is formed in Fe/CNT film, and the metal particles are filled in the interspaces of CNTs. It is evaluated that benefiting from good electrical conductivity and chemical inertness of metal carbide, Fe/CNT film achieves high emission characteristics and emission uniformity.     

Simulation, fabrication and characterization of a 3D piezoresistive force sensor

In this contribution we report on a miniaturized bulk micro-machined three-axes piezoresistive force sensor. The force sensor consists of a full membrane with 16 conventional two terminal p-type diffused piezoresistors on the surface of the membrane. The die size of the chip is 6.5 mm × 6.5 mm. Piezoresistors with four different designs were placed on the membrane. Sensitivities were found to be in the range of 0.37–0.79 mV/(V mN) and 1.68–2.92 mV/(V mN) in Z-direction and X- or Y-direction, respectively. The stiffness of the measured microprobes in the range of 5–8 mN/μm and 0.27–0.48 mN/μm were obtained in vertical and lateral direction, respectively. Various single and twin membranes designs were simulated to calculate stiffness of the microprobe. The measurement results show a cross-axis sensitivity of <2.5% at full scale of 25 mN.     

Polypyrrole functionalized with FePcTSA for NO2 sensor application

The nitrogen dioxide (NO₂) sensing capability of polypyrrole (PPy) was enhanced dramatically after functionalized with iron(III)phthalocyanine-4,4′,4″,4-tetrasulfonic acid monosodium salt (FePcTSA). The incorporated phthalocyanine was confirmed by different characterization techniques such as UV–vis spectroscopy, FTIR, GFAAS, EDAX, etc. The resistance of the functionalized PPy decreased spontaneously during exposure to NO₂ gas at room temperature. This material exhibited excellent stability, reversibility, and reproducibility. The lowest response time (t₅₀) thus obtained is 47 s with a highest response factor (ΔR/R₀ × 100) of 50.25.     

Solid-state potentiometric SO2 sensor combining NASICON with V2O5-doped TiO2 electrode

A compact tubular sensor based on NASICON (sodium super ionic conductor) and V₂O₅-doped TiO₂ sensing electrode was designed for the detection of SO₂. In order to reduce the size of the sensor, a thick-film of NASICON was formed on the outer surface of a small Al₂O₃ tube; furthermore, a thin layer of V₂O₅-doped TiO₂ with nanometer size was attached on the NASICON as a sensing electrode. This paper investigated the influence of V₂O₅ doping and sintering temperature on the characteristics of the sensor. The sensor attached with 5 wt% V₂O₅-doped TiO₂ sintered at 600 °C exhibited excellent sensing properties to 1–50 ppm SO₂ in air at 200–400 °C. The EMF value of the sensor was almost proportional to the logarithm of SO₂ concentration and the sensitivity (slope) was −78 mV/decade at 300 °C. It was also seen that the sensor showed a good selectivity to SO₂ against NO, NO₂, CH₄, CO, NH₃ and CO₂. Moreover, the sensor had speedy response kinetics to SO₂ too, the 90% response time to 50 ppm SO₂ was 10 s, and the recovery time was 35 s. On the basis of XPS analysis for the SO₂-adsorbed sensing electrode, a sensing mechanism involving the mixed potential at the sensing electrode was proposed.     

Design and fabrication of a capacitive infrared detector with a floating electrode and thermally isolatable bimorph legs

A new capacitive infrared detector structure that incorporates one electrically floated top electrode that acts as an infrared absorber and two bottom electrodes is proposed and fabricated. The concept begins from an attempt to remove metal lines, the main heat transfer media in the thermal-type infrared detector, from the device's thermal insulation section. A thermal insulation section can be composed without metal lines and instead be solely comprised of an insulator having very low thermal conductivity compared to metals. Therefore, low thermal conductance can be easily achieved with small dimensions of thermal insulation section material. The floating electrode is electrically disconnected from the substrate. Instead, the capacitance change is read only using the two bottom electrodes, which are separated from the absorber and placed on the substrate. The position of the top electrode (infrared absorber) is changed through a bimorph actuation in accordance with the absorption of LWIR (8–12 μm) rays, with an absorptance of 70%. This approach provides an enlarged fill-factor (25%) compared with earlier devices, because the portion of the leg in the pixel area is reduced, whereas the portion of the absorber area is increased. With the small dimension of the thermal insulation section (0.2 × 2 × 10 μm³), thermal conductance of 1.27 × 10⁻⁷ W/K is achieved. In addition, the shortened leg lends the device a higher spring constant relative to the conventional devices, and therefore a higher signal reading voltage can be achieved, resulting in increased temperature responsivity. With the bimorph-type infrared detector's characteristics of low noise and high sensitivity, the proposed structure can achieve a low NETD value of 12.7 mK.     

Micro-hotplates for high-throughput thin film processing and in situ phase transformation characterization

This paper presents the use of micro-hotplates (MHPs) as thermal processing and in situ characterization platforms for phase transformations in thin films. MHPs are fabricated by microsystem technology processes and consist of a SiO₂/Si₃N₄ membrane (app. 1 μm) supported by a bulk Si frame. Several embedded Pt thin films serve as heater and electrical measurement electrodes. It is shown that the MHPs have unique properties for the controlled annealing of thin film materials (up to 1270 K), as the annealing temperature and heating/cooling rates can be precisely controlled by in situ measurements. These rates can be extremely high (up to 10⁴ K/s), due to the low thermal mass of MHPs. The high cooling rates are especially useful for the fabrication of metastable phases (e.g. Fe₇₀Pd₃₀) by quenching. By measuring the resistivity of a thin film under test in situ as a function of the MHP temperature, microstructural changes (e.g. phase transformations) can be detected during heating and cooling cycles. In this paper, examples are presented for the determination of phase transitions in thin films using MHPs: the solid–liquid–gas phase transition (Al), the ferromagnetic–paramagnetic phase transition (Fe–Pt) and martensitic transformations (Ni–Ti–Cu, Fe–Pd). Furthermore, it is demonstrated that crystallization processes from amorphous to crystalline (Ni–Ti–Cu) can be detected with this method. Finally the application of MHPs in thin film combinatorial materials science and high-throughput experimentation is described.     

A technique for monitoring SO2 in combustion exhausts: Use of a non-Nernstian sensing element in combination with an upstream catalytic filter

Detection of sulfur dioxide (SO₂) at high temperature (600–750 °C) in the presence of some interferents found in combustion exhausts (NO₂, NO, CO₂, CO, and hydrocarbon (C₃H₆)) is described. The detection scheme involves use of a catalytic filter in front of a non-Nernstian (mixed-potential) sensing element. The catalytic filter was a Ni:Cr powder bed operating at 850 °C, and the sensing elements were pairs of platinum (Pt) and oxide (Ba-promoted copper chromite ((Ba,Cu)_xCr_yO_z) or Sr-modified lanthanum ferrite (LSF)) electrodes on yttria-stabilized zirconia. The Ni:Cr powder bed was capable of reducing the sensing element response to NO₂, NO, CO, and C₃H₆, but the presence of NO₂ or NO (“NO_x”, at 100 ppm by volume) still interfered with the SO₂ response of the Pt–(Ba,Cu)_xCr_yO_z sensing element at 600 °C, causing approximately a 7 mV (20%) reduction in the response to 120 ppm SO₂ and a response equivalent to about 20 ppm SO₂ in the absence of SO₂. The Pt–LSF sensing element, operated at 750 °C, did not suffer from this NO_x interference but at the cost of a reduced SO₂ response magnitude (120 ppm SO₂ yielded 10 mV, in contrast to 30 mV for the Pt-(Ba,Cu)_xCr_yO_z sensing element). The powder bed and Pt–LSF sensing element were operated continuously over approximately 350 h, and the response to SO₂ drifted downward by about 7%, with most of this change occurring during the initial 100 h of operation.     

Comparative study on TeO2 and TeO3 thin film for γ-ray sensor application

Tellurium trioxide (TeO₃) and tellurium dioxide (TeO₂) thin film has been deposited by rf sputtering. The influence of γ-radiation doses (in the range 10–50 Gy) on the optical and electrical properties of as-deposited films were studied. Optical band gap values were found to decrease with increasing radiation dose whereas electrical conductivity was increased by about five orders in magnitude. Monotonic decrease in the values of dielectric constant for the deposited TeO₃ films with increase in radiation dose was observed. The γ-ray response behavior of TeO₃ and TeO₂ thin films are compared, and TeO₃ thin film is found to be more suitable in amorphous form for γ-ray detection.     

Tetrakis(alkylthio)-substituted lutetium bisphthalocyanines for sensing NO2 and O3

In this study, the nitrogen dioxide (NO₂) and ozone (O₃) sensing properties of a series bis[tetrakis(alkylthio) phthalocyaninato] lutetium(III) complexes [(C_nH_2n+1S)₄Pc]₂Lu(III) (n = 6, 10, 16) are investigated as a function of concentration in the temperature range between 25 °C and 150 °C. The concentration ranges were 1–10 ppm for NO₂, and 50 ppb–1 ppm for O₃. The response time and the sensor response to NO₂ are measured for approximately 1 min and 100% ppm⁻¹, respectively, for compound 1 at room temperature. At room temperature, all compounds are in the solid phase. The response time decreases to a few seconds with increasing operation temperature to 150 °C. At this temperature, all compounds are in the liquid crystal phase. The fastest response to oxidizing gases is observed at the liquid crystal phase of the Pcs. It has also been observed that the response time and the sensor response depend on the alkyl chain lengths of the Pcs. The doping effect of oxygen has been determined under high purity nitrogen N₂ flow, after exposure to dry air, at a different period of time and after annealing. It has been found that the conductivities of [(C_nH_2n+1S)₄Pc]₂Lu(III) thin films increased after exposure to dry air and the conduction mechanism also changed from ohmic behavior to space-charge-limited conduction.     

H2 sensing characteristics of highly textured Pd-doped SnO2 thin films

The effects of the crystallographic orientation on the H₂ gas sensing properties were investigated in highly oriented polycrystalline Pd-doped SnO₂ films, which were obtained using rf magnetron sputtering of a Pd (0.5 wt%)-SnO₂ target on various substrates (a-, m-, r-, and c-cut sapphire and quartz). All the films had a similar thickness (110 nm), root-mean-square (rms) roughness (1.3 nm), surface area, and chemical status (O, Sn, and Pd). However, the orientation of the films was strongly affected by the orientation of the substrates. The (1 0 1), (0 0 2), and (1 0 1) oriented films were grown on (a-cut), (m-cut), and (r-cut) Al₂O₃ substrates, respectively, and rather randomly oriented films were deposited on (0 0 0 1) (c-cut) Al₂O₃ and quartz substrates. In addition, the oriented Pd-doped SnO₂ films were highly textured and had in-plane orientation relationships with the substrates similar to the epitaxial films. The (1 0 1) Pd-doped SnO₂ films on and Al₂O₃ showed a considerably higher H₂ sensitivity, and their gas response decreased with increasing sensing temperature (400–550 °C). The films deposited on and (0 0 0 1) Al₂O₃ showed the maximum sensitivity at 500 °C. The comparison of the H₂ gas response between undoped and Pd-doped SnO₂ films revealed that the Pd-doping shifted the optimum sensing temperature to a lower value instead of improving the gas sensitivity.     

Anodic stripping voltammetric determination of copper(II) using a functionalized carbon nanotubes paste electrode modified with crosslinked chitosan

The development and application of a functionalized carbon nanotubes paste electrode (CNPE) modified with crosslinked chitosan for determination of Cu(II) in industrial wastewater, natural water and human urine samples by linear scan anodic stripping voltammetry (LSASV) are described. Different electrodes were constructed using chitosan and chitosan crosslinked with glutaraldehyde (CTS-GA) and epichlorohydrin (CTS-ECH). The best voltammetric response for Cu(II) was obtained with a paste composition of 65% (m/m) of functionalized carbon nanotubes, 15% (m/m) of CTS-ECH, and 20% (m/m) of mineral oil using a solution of 0.05 mol L⁻¹ KNO₃ with pH adjusted to 2.25 with HNO₃, an accumulation potential of −0.3 V vs. Ag/AgCl (3.0 mol L⁻¹ KCl) for 300 s and a scan rate of 100 mV s⁻¹. Under these optimal experimental conditions, the voltammetric response was linearly dependent on the Cu(II) concentration in the range from 7.90 × 10⁻⁸ to 1.60 × 10⁻⁵ mol L⁻¹ with a detection limit of 1.00 × 10⁻⁸ mol L⁻¹. The samples analyses were evaluated using the proposed sensor and a good recovery of Cu(II) was obtained with results in the range from 98.0% to 104%. The analysis of industrial wastewater, natural water and human urine samples obtained using the proposed CNPE modified with CTS-ECH electrode and those obtained using a comparative method are in agreement at the 95% confidence level.