膜层厚度对CuPc／ZnS多层复合薄膜光电性能的影响

为了找到制备CuPc/ZnS多层复合膜薄膜最佳光电导性能的参数,本文研究了CuPc/ZnS多层复合膜的CuPc膜层的厚度系列、ZnS膜层的厚度系列的光电导性能和结构,利用表面电位衰减仪、紫外－可见光谱仪和X射线衍射仪等设备分析了复合薄膜的光电导性能和结构及其关系,探讨了改变CuPc、ZnS膜层的厚度对CuPc/ZnS多层复合膜薄膜的光电导性能和结构的影响。     

CuPc/ZnS多层复合薄膜的制备及光电性能的研究

为了找到制备具有最佳光电导性能的CuPc/ZnS多层复合薄膜的工艺参数 ,研究了CuPc/ZnS多层复合膜的层数系列、CuPc膜层的厚度系列、ZnS膜层的厚度系列和基板温度系列的光电导性能和结构。利用表面电位衰减、紫外 可见光谱和X射线衍射分析了复合薄膜的光电导性能和结构及其关系 ,探讨了改变复合膜层数、CuPc膜层和ZnS膜层的厚度以及基板温度对CuPc/ZnS多层复合薄膜的光电导性能和结构的影响     

CuPc／ZnS多层复合薄膜的制备及光电性能的研究

为了找到制备具有最佳光电导性能的CuPc/ZnS多层复合薄膜的工艺参数，研究了CuPc/ZnS多层复合膜的层数系列、CuPc膜层的厚度系列、ZnS膜层的厚度系列和基板温度系列的光电导性能和结构。利用表面电位衰减、紫外－可见光谱和X射线衍射分析了复合薄膜的光电导性能和结构及其关系，探讨了改变复合膜层数、CuPc膜层和ZnS膜层的厚度以及基板温度对CuPc/ZnS多层复合薄膜的光电导性能和结构的影响。     

介质/金属/介质多层透明导电薄膜研究进展

综述了介质/金属/介质(dielectric/metal/dielectric,D/M/D)多层透明导电膜材料的特点、制备方法、研究进展与应用现状,重点比较讨论了ITO/Ag/ITO、ZnS/Ag/ZnS的膜系结构、光电性能、化学稳定性、热稳定性等特点,以及与国内外的研究差距.ITO/Ag/ITO、ZnS/Ag/ZnS是目前光电性能最好,且无需引入过渡层的两种D/M/D膜系,但有关其热稳定性的评价和研究存在不同的观点.用资源丰富、价格便宜、无毒的掺铝氧化锌(ZAO)薄膜取代含有价格昂贵的贵金属铟的掺锡氧化铟(ITO)薄膜,ZAO/Ag/ZAO膜系结构的设计、薄膜制备、光电性能与IMI的对比研究是目前国内外D/M/D研究中的热点课题和D/M/D发展的主要方向.     

Zr基氮化物／金属Cu纳米多层膜的强韧化研究

多层结构可以提高材料的强度、弹性模量和韧性。当尺寸减小到纳米量级时,性能将产生飞跃变化。首先探讨了多层结构提高强度、弹性模量和韧性等性能的基本原理,然后阐明了纳米尺度效应及理论,重点以过渡族金属氮化物ZrN纳米多层膜为例,研究了氮化物／金属（ZrN／Cu）纳米多层膜、ZrAIN纳米复合膜以及ZrAIN／Cu纳米多层膜的强韧化性能。结果表明,ZrN／Cu纳米多层膜的断裂韧性约是二元ZrN薄膜的2倍。当纳米多层膜的Cu单层厚度为2013131时,多层膜的K1C值最高。ZrAIN复合膜的断裂韧性与Al含量密切相关,当Al原子分数为23％时,薄膜的KIc值达3．17MPa·m^1/2,其硬度〉40Gpa,Al原子分数为47％的薄膜的K1C值则降低到1．13MPa·m…。,其硬度降低至17．1GPa。与z州／cu纳米多层膜和ZrAlN复合膜相比,以ZrAIN层和cu层为调制结构制备的ZrAlN／Cu纳米多层膜具有最高的硬度和最好的韧性。     

CuPc／ZnS多层复合薄膜的光电性能研究

本文首次报道了用真空热蒸发法制备 Cu Pc/ Zn S交替多层复合薄膜 ,研究 Cu Pc和Zn S的层数以及制备工艺对薄膜光电性能和结构的影响。利用光电导特性测量仪、紫外 -可见光谱仪和 X射线衍射仪等设备分析了复合薄膜的结构和光电性能 ,探讨了有机 /无机复合薄膜的光电导机理 ,提出了理论模型。     

CuPc／ZnS多层复合薄膜的光电性能研究

本文首次报道了用真空热蒸发法制备ＣｕＰｃ／ＺｎＳ交替多层复合薄膜,研究ＣｕＰｃ和ＺｎＳ的层数以及制备工艺对薄膜光电性能和结构的影响。利用光电导特性测量仪、紫外可见光谱仪和Ｘ射线衍射仪等设备分析了复合薄膜的结构和光电性能,探讨了有机／无机复合薄膜的光电导机理,提出了理论模型。     

真空热蒸发酞菁铜(CuPc)薄膜的结构及光学、电学性能研究

为研究衬底温度对酞菁铜(CuPc)薄膜的结构、光学及光电导性能的影响,文中采用真空热蒸发方法制备了不同衬底温度的CuPc薄膜.X射线衍射和Raman光谱分析显示CuPc薄膜呈现很好的定向生长特性,随衬底温度的升高,CuPc薄膜的结晶性变好,其中α-CuPc的相对含量逐渐增加,而β-CuPc相应减少;场发射扫描电镜观察了不同衬底温度下薄膜的表面形貌和晶粒分布情况;用紫外可见光谱表征了CuPc薄膜的光学性能;CuPc薄膜的光敏性随衬底温度的升高表现出先增大后减小的变化规律.     

不同厚度二维VN插入层对TiSiN纳米复合膜微观结构和力学性能的影响

采用TiSi复合靶与V靶, 用射频磁控溅射工艺在TiSiN纳米复合膜中插入不同厚度的VN纳米层, 采用X射线衍射仪(XRD)、高分辨透射电子显微镜(HRTEM)和纳米压痕仪研究了VN插入层厚度对TiSiN纳米复合膜的微观结构和力学性能的影响。结果表明: 当TiSiN纳米复合膜中插入VN纳米层厚度较小时, 薄膜由纳米复合结构转变成纳米多层结构, 薄膜硬度降低。继续增加VN层厚度, 薄膜硬度随之升高, 在VN沉积层厚为0.5 nm时薄膜出现连续贯穿多层纳米层、结晶度良好的柱状晶, TiSiN层与VN层呈共格外延生长的结构, 薄膜硬度达到37.2 GPa。随着VN层厚的继续增加, 薄膜的共格外延生长结构消失, 硬度下降。     

PZT多层薄膜物性的研究

对磁控溅射PZT铁电多层薄膜进行了分析，结果表明：通过对多层薄膜合理的设计和厚度控制，可以改善薄膜的性能，为进一步的器件应用提供了可能性。通过研究发现。制备多层膜较理想的溅射条件是衬底温度Ts＝650℃，薄膜子层厚度约为300um，衬底则以MgO（100）单晶、SiO2（100）单晶为佳。结构分析的结果显示出：PZT多层铁电膜中的晶粒排列整齐，颗粒大小均匀，基本上和衬底成定向织构，膜的电畴呈180°。通过比较可以发现，子层厚度及总厚度超薄，膜的介电常数越大，弛豫频率也越高。但薄膜总厚度对多层膜的绝缘性能影响不大，这说明薄膜的绝缘性质主要是由金属－铁电薄膜的界面决定的。在不同的电压下，多层膜的传导性能影响肖特基势垒的穿透和Fowler－Nordheim隧穿。     

A study of photoconductive properties of vacuum-sublimated copper-phthalocyanine/zinc sulphide multilayer films

Copper-phthalocyanine (CuPc)/zinc sulphide (ZnS) multilayer films were prepared by vacuum-sublimation. X-ray diffraction, optical absorption spectra and photoconductive properties were measured for the multilayer films. The results showed that the photoconductive properties of the CuPc/ZnS multilayer films were better than that of the CuPc film. The effects of the pair number on the photoconductive properties of the multilayer films were studied. It was found that three-pair CuPc/ZnS multilayer film had the best photoconductive properties with the light sensitivity S=100 lx s and residual potential V_R=17 V.     

Low Temperature DC Sputtering Deposition on Indium-Tin Oxide Film and Its Application to Inverted Top-emitting Organic Light-emitting Diodes

Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.     

富勒烯、酞菁化学修饰聚环氧丙基咔唑的合成及其光电导性能

利用傅氏烷基化反应，合成了富勒烯C60和酞菁铜（CuPC）共同化学修饰的聚环氧丙基咔唑（PEPC）。研究结果表明，C60和酞菁铜接枝在PEPC侧链的咔唑环上。UV－Vis吸收光谱测试结果表明，C60－CuPc－PEPC在紫外和可见光区都有吸收。C60－CuPc－PEPC比CuPc-PEPC笔PEPC具有更好的光电导性能。这种UV－Vis吸收和光电导性能的改善主要是由于C60、CuPc与PEPC的相互作用。     

Improved performance of fluorinated copper phthalocyanine thin film transistors using an organic pn junction: Effect of copper phthalocyanine film thickness

We have investigated the effect of film thickness of copper phthalocyanine (CuPc) on improving fluorinated copper phthalocyanine (F₁₆CuPc) thin film transistor (TFT) performance with an organic pn junction. Electron field-effect mobility is exponentially enhanced up to 2.0 × 10^− 2 cm² V^− 1 s^− 1 with increasing of CuPc film thickness, and then unchanged when the CuPc thickness is over the saturation thickness (3 monolayers). The charge carrier density at the interface of F₁₆CuPc/CuPc decreases the total TFT resistance, which leads to the increase of mobility. Threshold voltage is suppressed with increasing CuPc films. On the other hand, larger current on/off ratio is obtained when islanded CuPc films are formed on the surface of F₁₆CuPc films. Therefore, employing an organic pn junction is an effective and simple method to fabricate high performance of n-channel transistors for practical applications.     

Utilization of copper phthalocyanine and bathocuproine as an electron transport layer in photovoltaic cells with copper phthalocyanine/buckminsterfullerene heterojunctions: Thickness effects on photovoltaic performances

In this work, copper phthalocyanine (CuPc) and bathocuproine (BCP) were used as electron transport layers (ETL) in organic photovoltaic (PV) cells with a structure of indium-tin-oxide/CuPc/C60/ ETL/Al. It was found that PV performance was sensitive to the ETL thickness. A complete coverage of ETL on the C60 film was essential to avoid an insulative C60/Al contact. ETL thickness of 6 nm resulted in optimal PV performance. The PV cells with BCP layers of 2-10 nm demonstrated good PV performance due to efficient electron transport from C60 to Al cathode. Similar result was obtained from the devices with CuPc ETL. However, thicker ETL resulted in considerable lose in PV performance. In both cases, different mechanisms responsible for the dependence of PV performance on ETL thickness are discussed.     

金刚石-硫化锌复合窗口的弹性应变研究

对于金刚石－硫化锌复合红外光学窗口，结构中存在的热应力和挠曲度的大小对其可靠性有很大的影响。利用弹性应变模型研究了在光学焊接中不同粘接温度和金刚石厚度下金刚石－硫化锌复合窗口将发生的最大应力、曲率和衬底到边缘的挠曲率。计算结果表明，当膜厚在极值附近时，复合结构明显弯曲、ZnS表面的应力极大；如何粘接温度较高，复合结构将严重变形，ZnS中所受的应力可能会超过其自身的断裂强度。当对金刚石－硫化锌复合红外窗口设计时，了解结构中存在的热应力和挠曲度的大小是很有用的。     

Studies on phase transformations of Cu-phthalocyanine thin films

Copper phthalocyanine (CuPc) thin films were obtained by a sublimation technique on Si wafer substrates maintained at room temperature. As-deposited CuPc films with less than 0.1 m thickness crystallize primarily in the -form with a preferential orientation of the crystallites in the [2 0 0] direction. The effect of randomizing of the orientation of the CuPc crystallites is observed as the film thickness increases, whereas the preference in appearance of the -form remains. The changes in phase composition, structure, morphology and surface chemical composition of as-deposited CuPc thin films due to different heat treatment conditions were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS).     

柔性ITO衬底上铜酞菁薄膜有序生长的X射线衍射研究

采用石英晶体微天平实时监测薄膜生长速率,通过控制衬底温度与薄膜生长速率,在柔性ITO导电衬底上真空蒸发沉积了铜酞菁薄膜.X射线衍射分析表明,适当提高衬底温度与薄膜生长速率,可促进薄膜的有序生长.当衬底温度为90℃,生长速率为10nm/min时,薄膜的有序度最高,薄膜晶型呈(相和(200)晶面.     

Control of ZnO thin film surface by ZnS passivation to enhance photoluminescence

To enhance the optical property of zinc oxide (ZnO) thin film, zinc sulfide (ZnS) thin films were formed on the interfaces of ZnO thin film as a passivation and a substrate layer. ZnO and ZnS thin films were deposited by atomic layer deposition (ALD) using diethyl zinc, H₂O, and H₂S as precursors. Investigations by X-ray diffraction and transmission electron microscopy showed that ZnS/ZnO/ZnS multi-layer thin films with clear boundaries were achieved by ALD and that each film layer had its own polycrystalline phase. The intensity of the photoluminescence of the ZnO thin film was enhanced as the thickness of the ZnO thin film increased and as ZnS passivation was applied onto the ZnO thin film interfaces.