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1.
Structural, magnetic and magnetocaloric properties of sol-gel prepared, nanocrystalline oxides Pr(1-x)A(x)Mn(1-y)Co(y)O3 (A = Ca, Sr) (x = 0.3; y = 0.5) (cubic, space group Fm3m) have been studied. From the X-ray data, the crystallite size of Pro.7Ca0.3Mn0.5Co0,503 and Pr0.7Sr0.3Mn0.5Co0.5O3 samples is found to be approximately 24 nm and approximately15 nm respectively. High resolution transmission electron microscopy image shows average particle size of approximately 34 nm and approximately 20 nm. Magnetization measurements indicate a Curie temperature of approximately 153 K and approximately172 K in applied magnetic field of 100 Oe for Pr0.7Ca0.3Mn0.5Co0.5O3 and Pr0.7Sr0.3Mn0.5Co0.O3 compounds. The magnetization versus applied magnetic field curves obtained at temperatures below 150 K show significant hysteresis and magnetization is not saturated even in a field of 7 T. The magnetocaloric effect is calculated from M versus H data obtained at various temperatures. Magnetic entropy change shows a maximum near T(c) for both the samples and is of the order approximately 2.5 J/kg/K.  相似文献   

2.
Journal of Materials Science: Materials in Electronics - In the present work, lead-free piezoelectric ceramics (Rx)(K0.5Na0.5)(Nb0.96Sb0.04O3)?x(Bi0.5Na0.5)(Zr0.8Sn0.1Hf0.1)O3 [abb. as...  相似文献   

3.
This article reviews on the use of Raman spectroscopy for the study of (K,Na,Li)(Nb,Ta,Sb)O(3) lead-free piezoceramics. Currently, this material appears to be one of the most interesting and promising alternatives to the well-known PZT piezoelectric materials. In this work, we prepare piezoceramics with different stoichiometries and study their structural, ferroelectric, and piezoelectric properties. By using both Raman spectroscopy and X-ray diffraction, we establish a direct correlation between the structure and the properties. The results demonstrate that the wavenumber of the A(1g) vibration is proportional to the tetragonality, the remnant polarization, and the piezoelectric coefficients of these materials. Thus, Raman spectroscopy appears as a very useful technique for a fast evaluation of the crystalline structure and the ferroelectric/ piezoelectric properties.  相似文献   

4.
In this study, nonstoichiometric (Na(0.5)K(0.5))(0.97)(Nb(0.96)Sb(0.04))O(3) ceramics were fabricated and their dielectric and piezoelectric properties were investigated according to the CeO(2) addition. In this ceramic composition, CeO(2) addition improved sinterability, electromechanical coupling factor k(p), mechanical quality factor Q(m), piezoelectric constant d(33), and g(33). At the sintering temperature of 1100°C, for the 0.2wt% CeO(2) added specimen, the optimum values of density = 4.359 g/cm(3), k(p) = 0.443, Q(m) = 588, ε(r) = 444, d(33) = 159 pC/N, and g(33) = 35 × 10(-3) V·m/N, were obtained. A piezoelectric energy harvesting device using 0.2 wt% CeO(2)- added lead-free (K(0.5)Na(0.5))(0.97)(Nb(0.96)Sb(0.04))O(3) ceramics and a rectifying circuit for energy harvesting were fabricated and their electrical characteristics were investigated. Under an external vibration acceleration of 0.7 g, when the mass, the frequency of vibration generator, and matching load resistance were 2.4 g, 70 Hz, and 721 Ω, respectively, output voltage and power of piezoelectric harvesting device indicated the optimum values of 24.6 mV(rms) and 0.839 μW, respectively-suitable for application as the electric power source of a ubiquitous sensor network (USN) sensor node.  相似文献   

5.
Li改性铌钽酸钾钠无铅压电陶瓷的研究   总被引:1,自引:0,他引:1  
利用固相反应法制备了(Na 0.52 K 0.48-x Li x)(Nb 0.86 Ta 0.10 Sb 0.04)O 3系无铅压电陶瓷, 研究了不同Li含量(x分别为0、0.02、0.04、0.06、0.08)样品的显微结构、物相组成及电性能. 结果表明, Li含量的改变对其物相组成、压电性能、铁电性能、介电性能都有显著影响. 当Li含量x从0增大到0.04时, 其压电性能相应提高, 当Li含量x超过0.04时, 压电性能明显下降; 在x=0.04时综合性能最好, 其压电常数d33高达260pC/N, 介电损耗tanδ为0.027, 平面机电耦合系数kp值达到50%, 剩余极化强度Pr为22μC·cm-2, 矫顽电场Ec为0.95kV·mm-1, 居里温度为316℃. 另外, 随着Li含量增加, 该系统的矫顽电场明显增强, 居里温度有所提高.  相似文献   

6.
This paper investigates the effect of K(1.94)Zn(1.06)Ta(5.19)O(15) (KZT) addition on the sintering behavior and piezoelectric properties in lead free piezoelectric ceramics of (K(0.5)Na(0.5))NbO(3) (KNN). The apparent density of sintered KNN ceramics was increased with KZT addition, and a relative density of above 96.3% was obtained with the doping of over 0.5 mol% KZT. The maximum dielectric and piezoelectric properties of epsilon(T)(3)/epsilon(0) = 590, d(33) = 126 pC/N, k(p) = 0.42, and P(r) = 18 microC/cm(2) were obtained from 0.5 mol% KZT-doped KNN ceramics. A small amount of KZT (about 0.5 mol%) was effective for improving the sintering behavior and piezoelectric properties, but KZT addition exceeding 1.0 mol% was effective only for densification. A small amount of KZT was effective for densification of KNN ceramics by promoting K(5.75)Nb(10.8)O(30) liquid phase formation. However, even though KNN with 1.0 to approximately -2.0 mol% KZT had a relative density of >98.5%, the piezoelectric properties were inferior to those of 0.5 mol% KZT-doped KNN, presumably due to the smaller grain size and excess liquid phase of the KNN ceramics doped with higher amounts of KZT. It is believed that a small amount of KZT could be one of the suitable sintering aids to obtain highly dense KNN based piezoelectric.  相似文献   

7.
采用固相法合成层状半导体K4Nb6O17,通过层间离子交换反应、胺插入反应以及硫化反应制备了纳米PbS插层的K4Nb6O17复合光催化剂(记作K4Nb6O17/PbS).利用X射线衍射(XRD),场发射扫描电镜(SEM),X射线荧光光谱仪(XRF),紫外可见漫反射(UV-Vis)和分子荧光光谱(PL)等技术对其进行表征.考察了催化剂在Na2SO3和Na2S为牺牲剂的光催化制氢活性.结果表明,PbS的插层拓展了K4Nb6O17对可见光的响应,催化制氢活性也有明显提高.在紫外光和可见光下3 h产氢量分别达到123.94和0.66 mmol/(g cat).最后讨论了插层复合催化剂光生电荷转移的机理.  相似文献   

8.
Transparent glass samples in (100-3x) (Li2O-2B2O3)-x(SrO-Bi2O3-0.7Nb2O5-0.3V2O5) (10 < or = x < or = 60, in molar ratio) system have been fabricated via conventional melt-quenching technique. The as-quenched samples, of all the compositions under study have been confirmed to be amorphous, by X-ray powder diffraction (XRD) studies. Differential thermal analysis (DTA) was employed to confirm the glassy nature of the as-quenched glasses. Glass composites comprising vanadium doped strontium bismuth niobate nanocrystallites were obtained by controlled heat-treatment of the as-quenched glasses at 783 K for 6 h. Perovskite SrBi2(Nb0.7VO3)2O9-delta phase formation was found to be preceded by an intermediate fluorite phase which was established via XRD and transmission electron microscopy (TEM). The dielectric constants (epsilonr) of the as-quenched glasses as well as the glass nanocrystal composites decreased with increase in frequency (100 Hz-10 kHz) at 300 K. Interestingly, the dielectric constant of the glass nanocrystal composite (heat-treated at 783 K/6 h) undergoes a maximum in the vicinity of the crystallization temperature of the host glass (Li2B4O7) reaching an anomalously high value (approximately 10(6)) at 800 K. Different dielectric mixture formulae were employed to rationalize the dielectric properties of the glass nanocrystal composite. The optical transmission properties of these glass nanocrystal composites were found to have strong compositional dependence.  相似文献   

9.
Mo–Nb and Nb–Mo epitaxial thin (10–200 nm) films growth on the r- sapphire plane under ultra high vacuum by laser ablation deposition at the growth temperature 750°C were tested. Grown films were characterized by reflected high energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning atomic force microscopy and electron transport measurements. It was found that bilayered films are high quality heteroepitaxial single-crystalline (001) films with low surface roughness (0.3–0.5 nm) and large residual electron mean free path, compared to the film thickness. The superconducting transition temperature of Nb–Mo films with equal layer thickness varies from 5 up to 9 K as the thickness increases from 10 to 100 nm. Physical properties of the films are close to each other both for Nb/Mo and Mo/Nb films of equal layer thickness and do not depend on the alternation of Mo and Nb layers. This suggests the same film structure quality and mutual epitaxy of the metals. The size dependence of electron conductivity of bilayered Mo–Nb films showed that it is determined by the dimension of individual layers, constituting the film, where the effect of ‘contact’ potential formed at the interface between Mo and Nb layers and a fluctuation of film bending is important.  相似文献   

10.
以Zn(NO3)2.6H2O、Ni(NO3)2.6H2O和Fe(NO3)3.9H2O及柠檬酸为原料,采用溶胶-凝胶法制备前驱体,在1 200℃下煅烧3 h合成ZnFe2O4和Ni0.5Zn0.5Fe2O4铁氧体粉体。利用差热分析、X射线衍射、扫描电镜、透射电镜和红外光谱等测试手段对产物进行分析和表征。结果表明:ZnFe2O4和Ni0.5Zn0.5Fe2O4属于立方晶系尖晶石结构,结晶完整,晶粒大小在100 nm左右。在0.2~1.8 GHz的频率下对产品进行了电磁损耗性能测试,发现Ni0.5Zn0.5Fe2O4具有较好的电磁损耗特性。  相似文献   

11.
通过传统固相合成工艺制备了(K0.465+xNa0.465+yLi0.07)(Nb0.95-zSb0.05)O3(x,y,z=-0.01~0.02)无铅压电陶瓷,研究了非化学计量比对陶瓷结构及压电性能的影响。结果表明符合化学计量比的陶瓷具有四方钙钛矿结构;在实验范围内,K和Nb的过量或少量均不会改变体系的相结构,而Na过量将会导致体系正交-四方相变温度升高到室温以上,并且正交-四方相变温度随y的增加而升高;过量添加约0.5%(摩尔分数)的K或Na便能补偿在高温烧结时的碱金属元素的挥发损失,进而提高陶瓷的压电性能;该体系陶瓷的组分在较大范围内变化时(如当y=z=0时,x=0~0.02;当x=z=0时,y=0~0.01;以及当x=y=0时,z=-0.01~0.005),仍然能保持d33>200pC/N和kP>40%这样较好的性能。上述结果不仅有利于在研究中材料制备工艺的重复,而且有利于当材料在器件应用时所面临的规模化生产。  相似文献   

12.
采用脉冲激光沉积(PLD)技术,分别在LaA lO3(LAO)、(La,Sr)(A l,Ta)O3(LAST)及SrTiO3(STO)三种不同的单晶衬底上制备了一系列无铅(Na1-xKx)0.5B i0.5TiO3(x=0.00,0.08,0.19,0.30,NKBT)铁电薄膜材料。利用X射线衍射(XRD)仪对薄膜结构进行了分析,结果表明在单晶平衬底上生长的薄膜都是单取向生长的外延膜,其中摇摆曲线的半高宽(FWHM)显示在(La,Sr)(A l,Ta)O3单晶衬底上生长的薄膜结晶质量最好。另外,在20°倾斜的(La,Sr)(A l,Ta)O3单晶衬底上生长的(Na1-xKx)0.5B i0.5TiO3铁电薄膜中还首次观察到了激光感生热电电压(LITV)信号。发现在能量为0.48mJ/pulse的紫外脉冲激光辐照下,其最大激光感生热电电压为31mV,完全满足了制作脉冲激光能量计探测元件的要求,有望开发出可集成的新型脉冲激光能量计。  相似文献   

13.
Sodium potassium niobate, (Na(0.5)K(0.5))NbO(3), fine powder has been successfully synthesized at the low temperature of 550 degrees C through a modified solid-state reaction method, in which urea [CO(NH(2))(2)] plays an important role. High-density (Na(0.5)K(0.5))NbO(3) ceramics could be obtained by conventional sintering of the synthesized (Na(0.5)K(0.5))NbO(3) fine powder with the addition of 0.03 mol% Co(3)O(4) as a sintering additive. The crystal structure, microstructure, and dielectric and piezoelectric properties were characterized. The (Na(0.5)K(0.5))NbO(3) ceramic showed a comparatively saturated P-E hysteresis loop. The (Na(0.5)K(0.5))NbO(3) ceramic also displayed piezoelectricity with a piezoelectric constant d(33) of 126 pC/N and a planar electromechanical coupling factor k(p) of 33%.  相似文献   

14.
采用传统陶瓷烧结工艺制备了(1-x)(K0.5Na0.5)NbO3-xLiNbO3无铅压电陶瓷,研究了陶瓷的结构、烧结特性及电性能特征.制备的(K0.5Na0.5)NbO3-LiNbO3陶瓷为单一的钙钦矿结构,室温下其相结构随LiNbO3含量增加逐渐由正交相向四方相转变,显微结构也由于LiNbO3含量的不同而表现出很大差异.与(K0.5Na0.5)NbO3陶瓷相比,(K0.5Na0.5)NbO3-LiNbO3陶瓷的烧结温度降低,烧结特性得到改善.(K0.5Na0.5)NbO3-LiNbO3陶瓷表现出优越的压电性能,其中0.94(K0.5Na0.5)NbO3—0.06LiNbO3(x=0.06)陶瓷的压电常数d33达到205pC/N,机电耦合系数kp为40.3%,kt达到49.8%.  相似文献   

15.
在表面活性剂CTAB水溶液中添加硝酸盐溶液,并滴加氨水,采用水热合成法在180℃的温度下反应9h,制备了La0.7Sr0.3FeO3前驱体,在700℃下煅烧6h后得到La0.7Sr0.3FeO3纳米颗粒组装的纳米线。利用SEM、TEM和XRD对其形貌、尺寸和结构等进行了表征。制备的La0.7Sr0.3FeO3纳米线是由约为20nm的纳米颗粒组装而成的,纳米线的最大长径比达100以上。通过改变水热合成时间和前驱体的煅烧温度等实验条件,对La0.7Sr0.3FeO3纳米线的物相转化和生长机理进行了分析。表面活性剂CTAB作为生长控制剂和颗粒凝聚载体,能够控制材料沿着轴向生长,形成纳米线。  相似文献   

16.
Lead-free piezoelectric ceramics with compositions around the morphotropic phase boundary (MPB) x(Na0.5Bi0.5)TiO3-y(K0.5Bi0.5)TiO3-zBaTiO3 [x + y + z = 1; y:z = 2:1] were synthesized using conventional, solid-state processing. Dielectric maximum temperatures of 280 degrees C and 262 degrees C were found for tetragonal 0.79(Na0.5Bi0.5)TiO3-0.14(K0.5Bi0.5)TiO3-0.07BaTiO3 (BNBK79) and MPB composition 0.88(Na0.5Bi0.5)TiO3-0.08(K0.5Bi0.5)TiO3-0.04BaTiO3 (BNBK88), with depolarization temperatures of 224 degrees C and 162 degrees C, respectively. Piezoelectric coefficients d33 were found to be 135 pC/N and 170 pC/N for BNBK79 and BNBK88, and the piezoelectric d31 was determined to be -37 pC/N and -51 pC/N, demonstrating strong anisotropy. Coercive field values were found to be 37 kV/cm and 29 kV/cm for BNBK79 and BNBK88, respectively. The remanent polarization of BNBK88 (approximately 40 microC/cm2) was larger than that of BNBK79 (approximately 29 microC/cm2). The piezoelectric, electromechanical, and high-field strain behaviors also were studied as a function of temperature and discussed.  相似文献   

17.
Journal of Materials Science: Materials in Electronics - A group of lead-free (1&nbsp;?&nbsp;x)(0.65Bi0.5Na0.5TiO3–0.35Sr0.7Bi0.2TiO3)–x[Ba(Zr0.3Ti0.7) O3]...  相似文献   

18.
K(Ta,Nb)O3薄膜中钙钛矿相的形成机理研究   总被引:1,自引:0,他引:1  
研究了工艺参数和衬底材料对K(Ta,Nb)O3薄膜生长的影响,研究表明钙钛矿相由焦绿石中间相转变而成,热处理时低速升温同样可以获得纯钙钛矿相的K(Ta,Nb)O3薄膜,分析了(100)SrTiO3,(100)MgO单晶衬底上钙钛矿相的形成机理,并解释了在硅单晶和石英玻璃衬底上纯钙钛矿结构的K(Ta,Nb)O3薄膜不易形成的原因。  相似文献   

19.
Lead-free KNN-modified piezoceramics of the system (Li,Na,K)(Nb,Ta,Sb)O3 were prepared by conventional solid-state sintering. The X-ray diffraction patterns revealed a perovskite phase, together with some minor secondary phase, which was assigned to K3LiNb6O17, tetragonal tungsten–bronze (TTB). A structural evolution toward a pure tetragonal structure with the increasing sintering time was observed, associated with the decrease of TTB phase. A correlation between higher tetragonality and higher piezoelectric response was clearly evidenced. Contrary to the case of the LiTaO3 modified KNN, very large abnormal grains with TTB structure were not detected. As a consequence, the simultaneous modification by tantalum and antimony seems to induce during sintering a different behaviour from the one of LiTaO3 modified KNN.  相似文献   

20.
Single-crystalline mullite (3Al2O3 2SiO2) nanowires have been produced in large quantities by a low cost and environmentally benign molten salt synthesis (MSS) method. The raw materials, Al2(SO4)3 and SiO2 powders, react in molten Na2SO4 at 1000 degrees C to produce mullite nanowires without the use of surfactants or templates. After the synthesis, the remaining salts can be easily separated from the products by washing with water. The final products are characterized by X-ray powder diffraction, field emission scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, selected-area electron diffraction, and inductively coupled plasma-atomic emission spectrometry. The thermal and chemical behavior of the raw materials is investigated by heating at a rate of 10 degrees C/min up to 1200 degrees C in air followed by thermogravimetric and differential scanning calorimetry analyses. The single-crystalline mullite nanowires have diameters of 30-80 nm and lengths from several hundreds of nanometers to micrometers and the growth mechanism is discussed.  相似文献   

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