The effects of gallium droplets on the morphologies and structures of alpha-Fe2O3 nanostructures grown on iron substrates

Alpha-Fe2O3 nanowires and nanobelts were grown by the thermal oxidation of iron substrates with or without gallium droplets in the air. The nanowires and nanobelts show a bicrystal structure with the growth direction uniformly along [110]. The morphological and structural properties of the as-grown alpha-Fe2O3 nanostructures are described and the growth condition dependence of the alpha-Fe2O3 nanostructures is shown. The transformation from nanowires to nanobelts occurs with the increase of growth temperature and addition of gallium. In addition, the growth evolution is investigated with reference to the Fe surface diffusion and supersaturation.     

Visible cathodoluminescence of Er ions in β-Ga(2)O(3) nanowires and microwires

Erbium doped β-Ga(2)O(3) nanowires and microwires have been obtained by a vapour-solid process from an initial mixture of Ga(2)O(3) and Er(2)O(3) powders. X-ray diffraction (XRD) analysis reveals the presence of erbium gallium garnet as well as β-Ga(2)O(3) phases in the microwires. Scanning electron microscopy (SEM) images show that the larger microwires have a nearly rectangular cross-section. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) analysis show good crystal quality of the β-Ga(2)O(3) nanowires. The nanostructures have been studied by means of the cathodoluminescence technique in the scanning electron microscope. Er intraionic blue, green and red emission lines are observed in luminescence spectra even at room temperature, which confirms the optical activity of the rare earth ions in?the grown structures. Mapping of the main 555?nm emission intensity shows a non-homogeneous distribution of Er ions in the microstructures.     

Batchwise growth of silica cone patterns via self-assembly of aligned nanowires

Silica-cone patterns self-assembled from well-aligned nanowires are synthesized using gallium droplets as the catalyst and silicon wafers as the silicon source. The cones form a triangular pattern array radially on almost the whole surface of the molten Ga ball. Detailed field-emission scanning electron microscopy (SEM) analysis shows that the cone-pattern pieces frequently slide off and are detached from the molten Ga ball surface, which leads to the exposure of the catalyst surface and the growth of a new batch of silicon oxide nanowires as well as the cone patterns. The processes of growth and detachment alternate, giving rise to the formation of a volcano-like or a flower-like structure with bulk-quantity pieces of cone patterns piled up around the Ga ball. Consequently, the cone-patterned layer grows batch by batch until the reaction is terminated. Different to the conventional metal-catalyzed growth model, the batch-by-batch growth of the triangular cone patterns proceeds on the molten Ga balls via alternate growth on and detachment from the catalyst surface of the patterns; the Ga droplet can be used continuously and circularly as an effective catalyst for the growth of amorphous SiO(x) nanowires during the whole growth period. The intriguing batchwise growth phenomena may enrich our understanding of the vapour-liquid-solid (VLS) growth mechanism for the catalyst growth of nanowires or other nanostructures and may offer a different way of self-assembling novel silica nanostructures.     

Investigation of substrate influence on tin dioxide nanostructures synthesized using horizontal furnace

SnO2 nanostructures were directly synthesised by chemical vapour transport on different substrates in a horizontal furnace. The influence of substrate on the morphology of these nanostructures was investigated by changing the substrate type, coating, and temperature. The SnO2 nanowires and nanorods were one dimensional (1D) structures with widths and lengths of 50-200 nm and several micrometers respectively. Scanning electron microscope (SEM) images show formation of short nanorods with lengths of less than 1 microm on indium-tin oxide (ITO) substrates. The effect of substrate temperature on growth was studied. SnO2 nanowires were obtained using silicon substrate, and the effect of Au coating on the size and morphology of these structures was proposed. By coating the Si wafer with a thin layer of Au, the size of the nanostructure was reduced and the length increased. The differences in size and morphology are shown by transmission electron microscopy (TEM). X-ray diffraction (XRD) spectra show tetragonal structures for both substrates.     

Morphology evolution, growth mechanism and optical properties of AlN nanostructures

In the present paper, we prepared various kinds of aluminium nitride (AlN) nanostructures utilizing chemical vapor deposition method at atmospheric pressure. Different nanostructures including flower, rod and film were obtained on bare silicon substrates by controlling the growth temperature between 650 and 800 °C. The formation mechanism of these nanostructures is related to vapor–solid process and Ehrlich–Schwoebel barrier. The crystalline phase and morphologies of the as-prepared AlN samples are investigated systematically. Their microstructures are observed by the scanning electron microscope. The X-ray diffraction results demonstrate that the AlN samples exhibit pure phase and grow preferentially along the c-axis. The Raman examination shows there is a strong stress at the interface between the AlN nanostructures and the silicon substrate. The photoluminescence properties indicate that AlN nanostructures possess a broad luminescence band, which can be divided into two subbands by Gaussian fitting, and they are ascribed to nitrogen vacancy as well as the oxygen impurity.     

GaN nanostructures by hot dense and extremely non-equilibrium plasma and their characterizations

High temperature, high density, and extremely non-equilibrium argon plasma produced in modified dense plasma focus device is used to generate ions from pellet of gallium nitride (GaN) fixed on the top of anode and deposited on glass, quartz, and silicon substrates. Atomic force microscope (AFM) study on glass substrate shows nearly spherical nanostructures. AFM and scanning electron microscope studies on quartz substrate show nearly spherical nanostructures and on silicon substrate show comet-like nanostructures. Energy-dispersive X-ray scattering does not show any peak of impurities and there is deficiency of nitrogen in GaN. X-ray diffraction spectra show amorphous nature on glass substrate, whereas nanocrystalline GaN is observed on quartz and silicon substrates. Photoluminescence spectra show peaks of band edge emission, red luminescence, blue luminescence, and UV luminescence bands. Raman study on silicon substrate show peaks of E2 (high), A1, and E1 modes.     

Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes

We demonstrate the temperature-dependent growth of germanium oxide and silicon oxide based composite nanostructures (multiple nanojunctions of Ge nanowires and SiO(x) nanowires, Ge-filled SiO(2) nanotubes, Ge/SiO(2) coaxial nanocables, and a variety of interesting micrometer-sized structures), aligned SiO(x) nanowire assemblies, and SiO(x) microtubes. The structures were characterized by SEM, TEM, energy-dispersive X-ray spectroscopy, and electron diffraction. The combination of laser ablation of a germanium target and thermal evaoporation of silicon monoxide powders resulted in the formation of Ge and SiO(x) species in a carrier gas; the nano/micro-sized structures grow by either a Ge-catalyzed vapor-liquid-solid or a Ge-nanowire-templated vapor-solid process.     

Aligned silica nanowires on the inner wall of bubble-like silica film: the growth mechanism and photoluminescence

Large area, aligned amorphous silica nanowires grow on the inner wall of bubble-like silica film, which is prepared by thermal evaporation of a molten gallium-silicon alloy in a flow of ammonia. These nanowires are 10-20?nm in diameter and 0.5-1.5?μm in length. The bubble-like silica film functions as a substrate, guiding the growth of silica nanowires by a vapour-solid process. This work helps us to clearly elucidate the growth mechanism of aligned amorphous silica nanowires, ruling out the possibility of liquid gallium acting as a nucleation substrate for the growth of the aligned silica nanowires. A broad emission band from 290 to 600?nm is observed in the photoluminescence (PL) spectrum of these nanowires. There are seven PL peaks: two blue emission peaks at 430?nm (2.88?eV) and 475?nm (2.61?eV); and five ultraviolet emission peaks at 325?nm (3.82?eV), 350?nm (3.54?eV), 365?nm (3.40?eV), 385?nm (3.22?eV) and 390?nm (3.18?eV), which may be related to various oxygen defects.     

Unconventional gallium oxide nanowires

Zigzag and helical beta-Ga(2)O(3) one-dimensional nanostructures were produced by thermal evaporation of gallium oxide in the presence of gallium nitride. High-resolution TEM analysis indicates that each individual zigzag nanostructure has a periodic arrangement of three distinct blocks: two structurally perfect blocks mirrored with respect to each other on the (002) plane, and one stacking-fault-rich block sandwiched between them. In a zigzag nanostructure, the growth orientation of a beta-Ga(2)O(3) crystal changes alternately in three blocks. The zigzag nanostructure as a whole has the [001] axial direction. In addition to zigzag nanostructures, single-crystalline helical nanowires were also obtained.     

Rutile structured SnO2 nanowires synthesized with metal catalyst by thermal evaporation method

One-dimensional (1-D) nanostructures such as tubes, rods, wires, and belts have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. Characterizing the mechanical properties of nanostructure is of great importance for their applications in electronics, optoelectronics, sensors, actuators. Wide-bandgap SnO2 semiconducting material (Eg = 3.6 eV at room temperature) is one of the attractive candidates for optoelectronic devices operating at room temperature, gas sensors, and transparent conducting electrodes. The synthesis and gas sensing properties of semiconducting SnO2 nanomaterials have became one of important research issues since the first synthesis of SnO2 nanobelts. Considering the important application of SnO2 in sensors, these structures are not only ideal systems for fundamental understanding at the nanoscale level, but they also have potential applications as nanoscale sensors, resonator, and transducers. The structured SnO2 nanorods have been grown on silicon substrates with Au catalytic layer by thermal evporation process over 800 degrees C. The resulting sample is characterized and analyzed by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy (EDS). The morphology and structural properties of SnO2 nanowires were measured by scanning electron microscopy and high-resolution transmission electron microscopy. The mean diameter of the SnO2 nanorods grown on Au coated silicon (100) substrate is approximately 80 nm. In addition, X-ray diffraction measurements show that SnO2 nanorods have a rutile structure. The formation of SnO2 nanowires has been attributed to the vapor-liquid-solid (VLS) growth mechanisms depending on the processing conditions. We investigated the growth behavior of the SnO2 nanowires by variation of the growth conditions such as gas partial pressure and temperature.     

Selective growth of silica nanowires in silicon catalysed by Pt thin film

Selective growth of amorphous silica nanowires on a silicon wafer deposited with Pt thin film is reported. The mechanism of nanowire growth has been established to follow the vapour liquid solid (VLS) model via the PtSi phase acting as the catalyst. Nanowires grow with diameters ranging from 50 to 500?nm. These bottom-up grown nanowires exhibit photoluminescence with a stable emission of blue light at 430?nm under excitation. The effect of varying the seed layer thickness (Pt film) from 2 to 100?nm has been studied. It is observed that, above 10?nm thickness, a continuous layer of Pt(2)Si re-solidifies on the surface, inhibiting the growth of nanowires. The selectivity to the Pt thickness has been exploited to create regions of nanowires connected to conducting silicide (Pt(2)Si) simultaneously in a single furnace treatment. This novel approach has opened the gateways for realizing hybrid interconnects in silicon for various nano-optical applications such as the localization of light, low-dimensional waveguides for functional microphotonics, scanning near-field microscopy, and nanoantennae.     

Growth mechanism and elemental distribution of beta-Ga2O3 crystalline nanowires synthesized by cobalt-assisted chemical vapor deposition

Long beta-Ga2O3 crystalline nanowires are synthesized on patterned silicon substrates using chemical vapor deposition technique. Advanced electron microscopy indicates that the as-grown beta-Ga2O3 nanowires are consisted of poly-crystalline (Co, Ga)O tips and straight crystalline beta-Ga2O3 stems. The catalytic cobalt not only locates at the nanowire tips but diffuses into beta-Ga2O3 nanowire stems several ten nanometers. A solid diffusion growth mechanism is proposed based on the spatial elemental distribution along the beta-Ga2O3 nanowires at nanoscale.     

GaN nanowires: CVD synthesis and properties

The growth of GaN nanowires from Ga and NH₃ sources in the flow of Ar carrier gas using a chemical vapor deposition (CVD) system was systematically studied. The substrates used were Si(111) and Si(100). Fabricated nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). We investigated the influence of growth temperature, catalyst used, Ga amount, and the ratio of Ar and NH₃ flow rates on the morphology and properties of GaN nanowires. We found that the best results were obtained for a growth temperature of 950 °C. Optimal catalysts were Au and metallic Ni, while the use of nickel nitrate was found to lead to formation of SiO_x nanowire bunches in addition to GaN nanowires. For the optimal temperature and catalyst used, the influence of the Ga to N ratio on the nanowire growth was studied. It was found that different types of nanostructures are observed in relatively Ga-rich and in relatively N-rich conditions. Growth mechanisms of different types of nanowires, including the stacked-cone nanowires and the microscale structures formed by lateral growth under N-rich conditions, are discussed.     

Direct growth of core-shell SiC-SiO(2) nanowires and field emission characteristics

A simple, direct synthesis method was used to grow core-shell SiC-SiO(2) nanowires by heating NiO-catalysed silicon substrates. A carbothermal reduction of WO(3) provided a reductive environment and carbon source to synthesize crystalline SiC nanowires covered with SiO(2) sheaths at the growth temperature of 1000-1100?°C. Transmission electron microscopy showed that the SiC core was 15-25?nm in diameter and the SiO(2) shell layer was an average of 20?nm in thickness. The thickness of the SiO(2) shell layer could be controlled using hydrofluoric acid (HF) etching. Field emission results of core-shell SiC-SiO(2) and bare SiC nanowires showed that the SiC nanowires coated with an optimum SiO(2) thickness (10?nm) have a higher field emission current than the bare SiC nanowires.     

GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions

GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. After deposition corresponding to a 200 nm thick (Ga,Mn)As layer the nanowires are around 700 nm long. Their shapes are tapered, with typical diameters around 30 nm at the base and 7 nm at the tip. The wires grow along the 111 direction, i.e., along the surface normal on GaAs(111)B and inclined on GaAs(001). In the latter case they tend to form branches. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self-assembled structures for nanospintronics.     

Nanobelts,Nanowires, and Nanodiskettes of Semiconducting Oxides—From Materials to Nanodevices

Novel nanostructures of semiconducting oxides are reviewed here. It is shown that nanobelts, nanowires, and nanodiskettes of materials such as zinc oxide, gallium oxide, silica, and tin oxide can be fabricated using a vapor‐phase evaporation method. Two applications of these materials—in field effect transistors and as gas sensors—are highlighted.     

Temperature dependent growth and optical properties of SnO<Subscript>2</Subscript> nanowires and nanobelts

SnO₂ nanowires and nanobelts have been grown by the thermal evaporation of Sn powders. The growth of nanowires and nanobelts has been investigated at different temperatures (750–1000°C). The field emission scanning electron microscopic and transmission electron microscopic studies revealed the growth of nanowires and nano-belts at different growth temperatures. The growth mechanisms of the formation of the nanostructures have also been discussed. X-ray diffraction patterns showed that the nanowires and nanobelts are highly crystalline with tetragonal rutile phase. UV-visible absorption spectrum showed the bulk bandgap value (∼ 3–6 eV) of SnO₂. Photoluminescence spectra demonstrated a Stokes-shifted emission in the wavelength range 558–588 nm. The Raman and Fourier transform infrared spectra revealed the formation of stoichiometric SnO₂ at different growth temperatures.     

Synthesis and applications of one-dimensional semiconductors

Nanoscale inorganic materials such as quantum dots (0-dimensional) and one-dimensional (1D) structures, such as nanowires, nanobelts and nanotubes, have gained tremendous attention within the last decade. Among the huge variety of 1D nanostructures, semiconducting nanowires have gained particular interest due to their potential applications in optoelectronic and electronic devices. Despite the huge efforts to control and understand the growth mechanisms underlying the formation of these highly anisotropic structures, some fundamental phenomena are still not well understood. For example, high aspect-ratio semiconductors exhibit unexpected growth phenomena, e.g. diameter-dependent and temperature-dependent growth directions, and unusual high doping levels or compositions, which are not known for their macroscopic crystals or thin-film counterparts.This article reviews viable synthetic approaches for growing high aspect-ratio semiconductors from bottom-up techniques, such as crystal structure governed nucleation, metal-promoted vapour phase and solution growth, formation in non-metal seeded gas-phase processes, structure directing templates and electrospinning. In particular new experimental findings and theoretical models relating to the frequently applied vapour-liquid-solid (VLS) growth are highlighted. In addition, the top-down application of controlled chemical etching, using novel masking techniques, is described as a viable approach for generating certain 1D structures. The review highlights the controlled synthesis of semiconducting nanostructures and heterostructures of silicon, germanium, gallium nitride, gallium arsenide, cadmium sulphide, zinc oxide and tin oxide. The alignment of 1D nanostructures will be reviewed briefly. Whilst specific and reliable contact procedures are still a major challenge for the integration of 1D nanostructures as active building blocks, this issue will not be the focus of this paper. However, the promising applications of 1D semiconductors will be highlighted, particularly with reference to surface dependent electronic transduction (gas and biological sensors), energy generation (nanomechanical and photovoltaic) devices, energy storage (lithium storage in battery anodes) as well as nanowire photonics.     

Controlled growth and characterization methods of semiconductor nanomaterials

One-dimensional (1D) semiconductor nanomaterials attract much attention because they are ideal systems for investigation and studying the relationship between properties and structures and having extensive application future in the high technical field. They are expected to play an important role in fabrication of the next generation nanocircuits, nanotools, nanowires lasers, photon tunneling devices, near-field photo-waveguide devices, etc. This article described controlled growth, characterization of structures and morphologies and properties of 1D semiconductor nanomaterials based on our previous works. This article is organized into two parts: The first part is complicated nanostructures of semiconductors, which includes coaxial nanocables, heterostructure nanowires and nanowires with metal-semiconductor junction behavior, hierarchical structures, doping of the nanowires and nanobelts, porous materials and periodically twined nanowires and asymmetrical polytypic nanobelts. The second part contains semiconductor nanoarrays based on anodic alumina membrane (AAM) templates. Finally, we propose that further investigation of the influence of nanomaterial morphologies on properties and how to design the morphology of nanostructures to meet the property requirements of nanodevices are our future research directions in this field.     

Stranski-Krastanow growth of germanium on silicon nanowires

There have been extensive studies of germanium (Ge) grown on planar silicon (Si) substrates by the Stranski-Krastanow (S-K) mechanism. In this study, we present S-K growth of Ge on Si nanowires. The Si nanowires were grown at 500 degrees C by a vapor-liquid-solid (VLS) method, using silane (SiH4) as the gaseous precursor. By switching the gas source from SiH4 to germane (GeH4) during the growth and maintaining the growth conditions, epitaxial Ge islands deposited on the outer surface of the initially formed Si nanowires. Transmission electron microscopy (TEM), scanning TEM, and energy-dispersive X-ray spectroscopy techniques were utilized to identify the thin wetting layer and the three-dimensional Ge islands formed around the Si core nanowires. Cross-sectional TEM verified the surface faceting of the Si core nanowires as well as the Ge islands.