Superconducting behavior of high-Tc YBa2Cu3O7 thin films with BaO impurity produced by pulsed laser deposition

We have investigated the superconducting behavior of high-T _c YBa₂Cu₃O₇ (YBCO) thin films containing BaO impure phase produced by pulsed laser deposition. The thin films were characterized by the standard four-probe method, X-ray diffraction (XRD), and scanning electron microscopy (SEM). XRD showed that all these thin films contained BaO impurity, with thec-axis normal to the surface of the substrates. The presence of impurity existed from substrate temperatureT _s of 727 to 796°C. When these thin films with BaO impurity were measured under the magnetic fields, it was found that the critical current densityJ _c increased slightly with increase in magnetic fieldB within the range ofB500 G, in the case ofB perpendicular to thec-axis of the film.     

Measurements of the surface resistance of high-Tc superconductors at high RF fields

We report measurements of the r.f. surface resistance of a wide variety of high-T _c superconductors in bulk form and as films on silver substrates. Several apparatuses have been constructed and used for measurements at frequencies from 0.15 to 40 GHz and r.f. surface magnetic fields as high as 640 G. In every case in which the field dependence of the surface resistance was measured, the surface resistance increased monotonically with field amplitude through a transition region characterized by a strong field dependence. It then saturated at high field at a value of a few percent of the normal-state surface resistance just aboveT _c . In the presence of this field dependence, the frequency dependence of the surface resistance changed from quadratic to less than linear.     

The As-prepared surfaces of C-axis-oriented Nd1Ba2Cu3Oy thin films characterized using scanning probe microscopes

Recently, superconducting Nd₁Ba₂Cu₃O_y (Ndl23) thin films with high superconducting transition temperature (T _c) have been successfully fabricated at our institute employing the standard laser ablation method. In this paper, we report the results of surface characterization of the Nd123 thin films using an ultrahigh vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) and an atomic force microscope (AFM) system operated in air. Clear spiral pattern is observed on the surfaces of Nd123 thin films by STM and AFM, suggesting that films are formed by two-dimensional island growth mode. Contour plots of the spirals show that the step heights of the spirals are not always the integer or half-integer number of thec-axis parameter of the structure. This implies that the surface natural termination layer of the films may not be unique. This result is supported byI-V STS measurements. The surface morphology of the Nd123 thin films is compared with that of thec-axis-oriented Y₁Ba₂Cu₃S_y thin films. Surface atomic images of the as-prepared Nd123 thin films are obtained employing both STM and AFM. STS measurements show that most of the surfaces are semiconductive. The results of STS measurements together with the fact that we are able to see the surface atomic images using scanning probe microscopes suggest that exposure to air does not cause serious degradation to the as-prepared surfaces of Nd123 thin films.     

Two-Peak Temperature Dependence of Microwave Surface Impedance of Single-Crystalline YBCO Thin Films: Role of Pairing Symmetry and Defect Structure

Temperature dependencies of microwave surface impedance were measured for c-oriented highly perfect YBCO thin films deposited by off-axis dc magnetron sputtering onto CeO₂-buffered r-cut sapphire substrates. A distinct two-peak structure of R _s(T) and X _s(T) dependencies with peaks at 28–30, K and 50, K has been revealed. The peaks become smeared at higher frequencies or in applied dc magnetic field, while the peak positions remain almost unchanged. The two-peak Z _s(T) behavior is believed to be an intrinsic electron property of extremely perfect quasi-single-crystalline YBCO films. A theoretical model is suggested to explain the observed anomalous Z _s(T) behavior. The model is based on the Boltzman kinetic equation for quasiparticles in layered high-T _c superconductors (HTS) cuprates. It takes into account the supposed s + d wave symmetry of electron pairing and strong energy-dependent relaxation time of quasiparticles, determined mainly by their elastic scattering on extended defects parallel to the c-axis.     

Tl2Ba2CaCu2O8 thin films on 2 in. LaAlO3(0 0 1) substrates

High quality Tl₂Ba₂CaCu₂O₈ (Tl-2212) superconducting thin films are prepared on both sides of 2 in. LaAlO₃(0 0 1) substrates by off-axis magnetron sputtering and post-annealing process. XRD measurements show that these films possess pure Tl-2212 phase with C-axis perpendicular to the substrate surface. The thickness unhomogeneity of the whole film on the 2 in. wafer is less than 5%. The superconducting transition temperatures T_cs of the films are around 105 K. At zero applied magnetic field, the critical current densities J_cs of the films on both sides of the wafer were measured to be above 2 × 10⁶ A/cm² at 77 K. The microwave surface resistance R_s of film was as low as 350 μΩ at 10 GHz and 77 K. In order to test the suitability of Tl-2212 thin films for passive microwave devices, 3-pole bandpass filters have been fabricated from double-sided Tl-2212 films on LaAlO₃ substrates.     

The Edge Effect of a Microstrip Resonator on the Field Dependence of the Surface Resistance of a High-Tc Superconducting Thin Film

A new behavior of the field dependence of microwave surface resistance (R _s), which was observed on a microstrip resonator and may be caused by the edge of the center strip, is reported in this paper for epitaxial high-T _c superconducting (HTSC) thin films. The exhibited behavior is that R _s remains almost unchanged below a certain rf magnetic field H _rf, and then increases abruptly at this field, after which it increases in proportion to H _rf. To explain the behavior, the morphology of the microstrip resonator was examined by atomic force microscopy (AFM), which showed that the edge of the resonator was damaged in some regions because of the acid etching. If the damaged edge is considered as a weakened granular superconductor, the observed R _s behavior could be explained well in terms of the high-frequency critical state model. This implies that the edge condition should be considered in studying the field dependence of R _s when the planar resonator technique is used.     

Dependency of Flux Jump on Temperature and Field-Sweep Rate for Textured (Nd1/3Eu1/3Gd1/3)Ba2Cu3O7- δ Bulk Superconductor with Gd-211 Particles

Anisotropy flux jumps in the mixed state of a textured (Nd_0.33Eu_0.33Gd_0.33)Ba₂Cu₃O_7-δ bulk superconductor with Gd-211 doping particles have been studied by means of magnetization measurements in the model of the magnetic field paralleling and perpendicular to the c axis. A typical anisotropy flux jump was observed at a temperature ranging from 2.0 to 3.0 K. Under the magnetic field perpendicular to c axis, no flux jump was found at whole temperature range until the sweep rate of 200 Oe/sec. For the magnetic field paralleling to the c axis, the number of flux jumps decreased with the increase of temperature, and the third quadrant of the M–H curve is the most flux-instability quadrant. The magnetic field sweep rate dependences of flux jumps were also studied and the influence of flux creep on flux jumps was also discussed.     

The Influence of Bi Doping on the In Situ Growth of TlBa2Ca2Cu3O9 High-Tc Films

The in situ process—laser ablation in combination with thermal evaporation of Tl₂O—has turned out to be a preparation method for single-phase and epitaxial TlBa₂Ca₂Cu₃O₉ (1223) thin films with T _c values up to 109 K. It was found by several groups that a partial substitution of Tl by Bi simplifies the phase development of the 1223 compound in the usual two-step process. We have investigated the influence of the Bi doping on the in situ growth. X-ray measurements show that the films consisted mainly of the 1223 compound. In 300-nm thin films there was no evidence of a Bi amount in the crystal structure, but thinner films (80 nm) show a small amount of Bi. We concluded that Bi doping supports the phase development of the 1223 compound only in an early stage of the film growth. The Bi-doped films have higher T _c values up to 114 K, higher j _c values up to 6 × 10⁵ A/cm² (77 K, 0 T), and lower surface resistances of 56 m (77 K, 87 GHz) than the undoped films.     

Microwave properties of highly oriented YBa2Cu3O7-δ superconducting thin films

We have performed millimeter-wave frequency (94 GHz) measurements on high-quality YBa₂Cu₃O₇- superconducting films on yttrium-stabilized (100) ZrO₂ and MgO substrates. The 0.2m thin films fabricated by magnetron sputteringin situ with the YBa₂Cu₃O₇- powders as target exhibit superconducting transition temperatures up to 88 K. The critical current density of 6×10⁵ A/cm² at 77 K and the X-ray diffraction spectrum as well as scanning electron microscope photographs indicate these thin films are fullyc-axis oriented, extremely high in density, and universally homogeneous. Millimeter-wave surface resistances have been measured on a hemisphere open resonator in the temperature range of 20 K toT _c and beyond. The surface resistance at 94 GHz and 77 K for these films is found to be about 30 m, nearly 1/4 that for copper, and a drop of two orders in the surface resistance within 4 K is observed, which indicates that these films are good materials for applications in the millimeter-wave range, especially for fabricating microwave devices. We observed such low surface resistance in these thin films due to the near absence of grain and phase boundaries coupled with a high degree of crystalline orientation.     

Microstructural study of YBa2Cu3O7/SrTiO3/YBa2Cu3O7 heteroepitaxial trilayer films grown on (100) SrTiO3 substrates

Detailed transmission electron microscopic study has been carried out on heteroepitaxial YBa₂Cu₃O₇/SrTiO₃/YBa₂Cu₃O₇ trilayer thin films grown on (100)SrTiO₃ substrates prepared by DC and RF magnetron sputtering. The microstructural results showed the existence of somea-axis-oriented YBCO grains 20–90 nm wide in thec-axis-oriented YBCO matrix. Some of thea-axis grains in the lower YBCO thin film layer have protruded into the above SrTiO₃ layer, which may cause short circuit between the two YBCO superconducting layers. This is unsuitable for the application of trilayer thin films for microelectronic devices. The defects on the surface of the substrates would also influence the growth quality of the YBCO thin films.     

Microwave Properties of In Situ Grown MgB2 Superconducting Thin Films

The electrodynamic response at 20 GHz of c-axis oriented MgB₂ superconducting thin films is reported. Mg-rich Mg-B precursor samples were grown on MgO and Al₂O₃ single crystal substrates by a d.c. planar magnetron sputtering technique, and subsequently annealed in situ at 800°C for 10 min in a In-sealed Nb box in the presence of saturated Mg vapor. The films were characterized by a variety of structural and electronic techniques including XRD, EDS, STM-AFM analyses, and transport measurements. The dependence of the surface impedance from temperature and radiofrequency (r.f.) field amplitude was measured via a dielectric resonator technique. Temperature data clearly confirm the s-wave nature of the newly discovered superconductor, even if the value of the energy gap is smaller than BCS prediction. An effective two-band model can be applied to quantitatively explain the experimental results. In spite of previous reports claiming the absence of weak link behavior in MgB₂, the power dependence show that granularity governs the performance of these films in the microwave region.     

Distribution of pyrochlore phase in Pb(Mg1/3Nb2/3)O3-PbTiO3 films and suppression with a Pb(Zr0.52Ti0.48)O3 interfacial layer

Thin films of the relaxor ferroelectric Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT) on Pt/Ti/SiO₂/Si (Pt/Si) substrates both with and without a Pb(Zr_0.52Ti_0.48)O₃ (PZT) interfacial layer were investigated. Perovskite and pyrochlore coexistence was observed for PMN-PT thin films without a PZT interfacial layer. Interestingly, most of the pyrochlore phase was observed in single-coated films and in the first layer of multi-coated films. The pyrochlore phase exhibited grains with an average size of about 25 nm, which is smaller than those of the perovskite phase (about 90 nm). In contrast, for PMN-PT thin films grown on a PZT interfacial layer, the formation of a pyrochlore phase at the interface between PMN-PT layers and the substrate is completely suppressed. Moreover, small grains are not observed in the films with a PZT interfacial layer. The measured polarization-electric field (P-E) hysteresis loops of PMN-PT films with and without PZT layers indicate that enhanced electrical properties can be obtained when a PZT interfacial layer is used. These enhanced properties include an increase in the value of remanent polarization P_r from 2.7 to 5.8 μC/cm² and a decrease in the coercive field E_c from 60.5 to 28.0 kV/cm.     

Microwave characterization of laser ablated Y1Ba2Cu3O7−x thin films

In the present study we report the measurements of microwave surface resistance (R_s) of YBCO thin films on LaAlO₃ substrate as a function of temperature, thickness and magnetic field by microstrip resonator technique. The T_c(R = 0) of the films is 90 K and J_c > 10⁶ A/cm² at 77 K. The microwave surface resistance has been measured for films of various thicknesses. The value of R_s has been found to be initially decreased with increasing film thickness due to increase in number of defects. A minimum microwave surface resistance has been obtained for film thickness of about 300 nm. The increase of R_s with film thickness above 300 nm is possibly due to degradation of the film microstructure as observed with Atomic Force Microscopy. Temperature dependence of surface resistance has been studied for best quality films. The field induced variations of surface resistance are also investigated by applying dc magnetic field perpendicular to stripline structure and surface of the film. A general linear and square field dependence of R_s at low and high value of fields has been observed with critical field value of 0.4 T which confirms the microwave dissipation induced by flux flow in these resonators at 10 GHz frequency. The hysteresis of R_s in dc field observed for field value above critical field shows the higher value of surface resistance in decreasing field than in increasing field which is in agreement with one state critical model and is a characteristic of homogeneous superconductors.     

Synthesis and characterization of Ca3Co4O9 thin films prepared by sol-gel spin-coating technique on Al2O3(001)

Ca₃Co₄O₉ thin films are deposited on Al₂O₃(001) substrates using a sol-gel spin-coating process. X-ray diffraction shows that the film exhibits a single phase of Ca₃Co₄O₉ with the (00l) planes parallel to the film surface. The temperature dependence of magnetic susceptibility showed as expected the existence of two magnetic transitions similar to those observed in bulk samples: a ferrimagnetic and a spin-state transition around 19 and 375 K, respectively. At 5 K the magnetization curves along the c-axis of the Al₂O₃(001) show that the remanent magnetization and coercive field are close to those obtained for films grown by pulsed laser deposition, which evidences the interest to use such an easy technique to grow complex thin films oxides.     

Interaction between the Ferromagnetic Dots and Vortices: Numerical Calculation and Experimental Results

Enhancing the pinning force in high-T _c superconductors can be achieved by externally introduced periodic magnetic dots. We numerically calculate the interaction between ferromagnetic dots and vortices in high-T _c superconductors. The London equation is used to generate two-dimensional vortex lattice. In the matching condition, we calculate the attraction force between magnetic dots and vortices. It is found that in an ideal condition, the pinning force of the magnetic dot reaches 2.5×10⁻¹¹ N that is more than one order magnitude stronger than the intrinsic pinning force in YBa₂Cu₃O₇ thin films. In the experimental side, we use a novel nano-technique to deposit periodic submicron Ni dots on YBa₂Cu₃O₇ thin films. The current versus voltage characteristics of an YBa₂Cu₃O₇ thin film strip with uniform Ni dots are measured at various temperatures and magnetic fields. They are compared with the current versus voltage characteristics of a bare YBa₂Cu₃O₇ thin film strip without magnetic dots. It is found the critical current value of the strip with Ni dots reduces with a much slower pace as the magnetic field strength increases in comparison with the value of the bare sample.     

Parallel-plate resonator of variable spacer thickness for accurate measurements of surface impedance of high-Tc superconductive films

Measurements of microwave surface impedance of high-T _c films at gigahertz frequencies and nitrogen temperature are performed. A simple technique employing a parallel-plate resonator with liquid nitrogen as a dielectric spaces is suggested. The use of a precise mechanical device provides smooth changing of distance between films from 200m down to zero. Coupling to the resonator is accomplished by means of two small antennas-half-wave vibrators for frequency 10 GHz. The method for determining resistivity and magnetic field penetration depth was based on the analysis of spacer thickness dependences of the resonator quality factor and frequency. YBa₂Cu₃O₇ films produced by a laser deposition technique on CaNdAlO₄ substrates withT _c =91 K andj _c =10⁷ A/cm² and on NdGaO₃ substrates withT _c =91 K andj _c =10⁶ A/cm² are examined, and the valuesR _s =0.6 m,=348 nm atf=8.97 GHz andR _s =0.5 m,=250 nm atf=10.12 GHz, respectively, are obtained at 77 K.     

High-Tc superconductor in an a.c. field

The behavior of high-T _c oxides in an alternating field is studied. The short coherence length and the layered structure require an unconventional microscopic analysis. The complex conductivity(, k) is evaluated. The frequency and temperature dependences of the impedance are obtained (in the region of small frequencies). The effect of impurities is discussed. The microwave properties of the proximity system S_h-N (S_h and N are high-T _c and normal films, respectively) are discussed.     

Dielectric Resonators for the Measurement of Superconductor Thin Films Surface Impedance in Magnetic Fields at High Microwave Frequencies

We present the design and realization of cylindrical dielectric resonators operating in the 40–60 GHz frequency range, designed for the measurement of the surface resistance and of the surface reactance shift in High-T _c Superconductors (HTS) thin films in a dc magnetic field. The resonators are single tone, based on the TE ₀₁₁ mode, and multiple tone, the latter allowing in principle to exploit the simultaneous determination of the surface impedance at different frequencies. As an application example, we report the temperature and field dependencies of the effective surface impedance of some cuprate superconductors thin films. The results are compared with those obtained through the use of a standard metal cavity with a similar Q-factor and operating in the same frequency range. The comparison highlights a superior stability and a higher sensitivity, resulting in an increase of about two orders of magnitude in the resolution of the surface impedance measurement. By contrast, the dissipative part of the superconducting transition (above T/T _c = 0.97) is better studied with the metal cavity. We also present measurements in the vortex state in YBaCa₂Cu₃O_7−δ and Tl₂Ba₂CaCu₂O_8+x that show significantly different physics. PACS: 74.25 Nf.     

Magnetic relaxation and critical current in Bi2Sr2CaCu2O8+x single crystals

The anisotropy of critical current densityJ _c in Bi₂Ba₂CaCu₂O_8+x single crystals has been investigated as a function both of the temperature and of the applied magnetic field. An anisotropic behavior ofJ _c has been found. The decay of the remanent magnetization has been studied for fields applied both parallel and perpendicular to thec axis. A logarithmic behavior was found. A pinning energyU ₀ of about 0.01 eV, independent of the direction of the applied field, was obtained.     

Growth and applications of superconducting and nonsuperconducting oxide epitaxial films

Growth and characterization of high-temperature-superconducting YBa₂Cu₃O₇ and several metallic-oxide thin films by pulsed laser deposition is described here. An overview of substrates employed for epitaxial growth of perovskite-related oxides is presented. Ag-doped YBa₂Cu₃O₇ films grown on bare sapphire are shown to giveT _c=90 K, critical current >10⁶ A/cm² at 77 K and surface resistance =450μΩ. Application of epitaxial metallic LaNiO₃ thin films as an electrode for ferroelectric oxide and as a normal metal layer barrier in the superconductor-normal metal-superconductor (SNS) Josephson junction is presented. Observation of giant magnetoresistance (GMR) in the metallic La_0·6Pb_0·4MnO₃ thin films up to 50% is highlighted.