Microwave Response of Perfect YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7−<Emphasis Type="Italic">x</Emphasis></Subscript> Thin Films Deposited on CeO<Subscript>2</Subscript>-Buffered Saphire: A Probe for Pairing Symmetry

Microwave surface impedance, Z _s(T), of epitaxial YBCO thin films deposited on CeO₂-buffered sapphire substrates, was measured at several discrete frequencies within the range 5–134 GHz by use of coplanar resonator and end-plate cavity resonator techniques. The main features of obtained experimental results are as follows: (i) surface resistance R _s(T) at low temperatures obeys the exponential law: R _s(T) = R _res+R ₀⋅exp [−δ/T] with a small gap δ value (δ≈ 0.7 T _c); (ii) the most perfect quasi-single-crystalline films reveal a distinct two-peak structure of R _s(T) dependence, which is not observable in films with a less ordered crystal structure. These features are believed to reveal some intrinsic electron properties of such films, namely: (i) mixed (d+is) type symmetry of electron pairing, and (ii) dominant role of extended c-oriented defects (e.g., edge dislocation arrays or twin planes) in quasiparticles scattering for the most perfect films, which demonstrate the two-peak anomalous R _s(T) behavior.     

Irreversible change of surface impedance of high-Tc thin films due to D.C. magnetic field commutation

The magnetic field dependence of the surface impedance (resistance and reactance) of high-T _c thin films is found employing measurements of the quality factor and the frequency of the parallel plate resonator in a dc magnetic field up to 500 Oe at 10 GHz.c-Oriented YBa₂Cu₃O₇ thin films are examined. Enhancement of surface resistance and inductance with increase of magnetic field is observed. The effect of irreversible increase of surface impedance as compared to its initial values after a cycle of magnetic field commutation is found. A qualitative explanation of the observed effects based on the picture of magnetic vortex penetration and accumulation in the film due to strong pinning is presented.     

Characterization of Superconductor Coplanar Resonators Deposited on Different Substrates by Thermal Coevaporation

This study is based on two commercially available YBCO thin films deposited by the thermal coevaporation method on different substrates (MgO and LaAlO₃). Those films should be optimized for microwave applications. The structure and microstructure of the film deposited on LaAlO₃ have been investigated, respectively by XRD and SEM. These characterizations showed the high quality of the films concerning the c-axis orientation and the smooth and homogenous morphology. The films have then been etched into two different coplanar line resonators by ionic method (YBCO/LaAlO₃) and chemical one (YBCO/MgO) and their microwave properties have been characterized in two different cryogenic experimental set-ups. Despite the differences between these coplanar resonators, we have obtained the same intrinsic parameters (λ₀ = 190 nm, T _c=87 K with γ = 3) corresponding to the data provided by THEVA and a very low surface resistance (R _s=0.4 m Ω at 31 K and 10 GHz).     

Substrate Contribution to the Surface Impedance of HTS Films on Si

We study the effects of semiconductor substrates on the surface impedance of high-T _c Superconductor (HTS) YBa₂Cu₃O_7−δ (YBCO) films. The characteristic impedance of silicon (Si) (for different doping levels and for different charge carrier scattering times) is evaluated. In particular, the most relevant features of Si electrodynamics are highlighted by the introduction of suitable normalized quantities. The effective surface impedance of the YBCO films on Si substrates is then calculated and discussed for different temperatures and frequencies in the microwave range, comparing the obtained results to their limiting expressions for bulk and thin-film HTS. Our analysis shows how the widely used thin-film approximation for the surface impedance can fail, critically highlighting the conditions it requires to be correctly used. We show that substrate contributions can heavily influence the overall response.     

Preparation of epitaxial YBa2Cu3O7−x films by magnetron sputtering

Thin films of highT _c superconductor YBa₂Cu₃O_7−x were obtained by magnetron sputtering. MgO, YSZ, YSH and Al₂O₃ single crystals were used as substrates. Epitaxial films with tetragonal structure havingT _c 55–60 K grow at substrate temperaturesT _s between 930 K and 980 K. Orientation of the films in thisT _s range was (100) and (001) for (100) MgO substrate, (111) and (001) for (1012) Al₂O₃ and (111) YSH and (113) or (103) on (110) YSZ and (111) YSH. Single crystalline films with orthorhombic structure and (001) orientation were grown on all the substrates whenT _s exceeded 980 K. They haveT _c>80 K.     

Growth and applications of superconducting and nonsuperconducting oxide epitaxial films

Growth and characterization of high-temperature-superconducting YBa₂Cu₃O₇ and several metallic-oxide thin films by pulsed laser deposition is described here. An overview of substrates employed for epitaxial growth of perovskite-related oxides is presented. Ag-doped YBa₂Cu₃O₇ films grown on bare sapphire are shown to giveT _c=90 K, critical current >10⁶ A/cm² at 77 K and surface resistance =450μΩ. Application of epitaxial metallic LaNiO₃ thin films as an electrode for ferroelectric oxide and as a normal metal layer barrier in the superconductor-normal metal-superconductor (SNS) Josephson junction is presented. Observation of giant magnetoresistance (GMR) in the metallic La_0·6Pb_0·4MnO₃ thin films up to 50% is highlighted.     

Two-Peak Temperature Dependence of Microwave Surface Impedance of Single-Crystalline YBCO Thin Films: Role of Pairing Symmetry and Defect Structure

Temperature dependencies of microwave surface impedance were measured for c-oriented highly perfect YBCO thin films deposited by off-axis dc magnetron sputtering onto CeO₂-buffered r-cut sapphire substrates. A distinct two-peak structure of R _s(T) and X _s(T) dependencies with peaks at 28–30, K and 50, K has been revealed. The peaks become smeared at higher frequencies or in applied dc magnetic field, while the peak positions remain almost unchanged. The two-peak Z _s(T) behavior is believed to be an intrinsic electron property of extremely perfect quasi-single-crystalline YBCO films. A theoretical model is suggested to explain the observed anomalous Z _s(T) behavior. The model is based on the Boltzman kinetic equation for quasiparticles in layered high-T _c superconductors (HTS) cuprates. It takes into account the supposed s + d wave symmetry of electron pairing and strong energy-dependent relaxation time of quasiparticles, determined mainly by their elastic scattering on extended defects parallel to the c-axis.     

Superconducting behavior of high-Tc YBa2Cu3O7 thin films with BaO impurity produced by pulsed laser deposition

We have investigated the superconducting behavior of high-T _c YBa₂Cu₃O₇ (YBCO) thin films containing BaO impure phase produced by pulsed laser deposition. The thin films were characterized by the standard four-probe method, X-ray diffraction (XRD), and scanning electron microscopy (SEM). XRD showed that all these thin films contained BaO impurity, with thec-axis normal to the surface of the substrates. The presence of impurity existed from substrate temperatureT _s of 727 to 796°C. When these thin films with BaO impurity were measured under the magnetic fields, it was found that the critical current densityJ _c increased slightly with increase in magnetic fieldB within the range ofB500 G, in the case ofB perpendicular to thec-axis of the film.     

Investigation and Modeling Nonlinear Characteristics of High-Tc Superconducting Resonators

The high-quality resonators and pass-band filters based on high-T _c superconducting (HTS) films are of the most interest for practical applications. The industrial application of the devices is retarded by nonlinearity of the film surface impedance under microwave power of a high level. The phenomenological model of nonlinear characteristics of HTS resonators was developed and applied to different kinds of planar resonators: disk, parallel plate, and micro-strip resonator. A comparison of experimental and modeled characteristics of the resonators revealed the distinctive difference in the model parameters. Some limiting characteristics are discussed.     

Effect of Sputtering Parameters on Superconducting Properties of GdBaCuO Epitaxial Thin Film Deposited by ICP Method

Thin films of GdBaCuO (GBCO) have been deposited in situ onto LaAlO₃ single crystal substrates by inverted cylindrical sputtering pattern (ICP). The superconductive properties of the thin films' dependence on the substrate temperature and sputtering pressure have been systematically investigated. By optimization of the deposition parameter, high-quality c-axis epitaxial GBCO thin films of T _c0>92 K were reproducibly grown. The T _c of the best sample is as high as 93.2 K. Upon changing the target composition to GdBa₂Cu₄O _y (Gd₁₂₄), it was observed that the samples always show some a-axis oriented films, implying that excess copper would favor a-axis growth in thin films. The superconductivity of the thin films under higher substrate temperature (T _s>800°C) was clearly improved by the procedure of special post-oxygenization at 400°C with an ozone atmosphere. This is very useful for preparing large-area thin films of GBCO.     

Fabrication of SmBa2Cu3O7 Films on CeO2 Buffered Sapphire

SmBa₂Cu₃O_7−δ (SmBCO) thin films and CeO₂ buffer layers were deposited on γ-cut sapphire by pulsed laser deposition (PLD) and characterized with X-ray diffraction (XRD) and atomic force microscope (AFM). The θ–2θ XRD scans of the SmBCO/CeO₂/sapphire structures revealed that the CeO₂ and SmBCO films were grown with c-axis perpendicular to the substrate. In Φ-scan XRD patterns, four (103) peaks of the SmBCO film were observed and the peak positions were shifted by 45° from (202) peaks of the CeO₂ films. From the peak shifts we could conclude that the [110]_SmBCO crystal axis is parallel to the [100]_CeO2 crystal axis. Moreover, pole figure also confirmed that SmBCO films were grown on the substrates epitaxially along in-plane direction. The SmBCO films show very flat surfaces with root mean square (RMS) about 5 nm. In agreement with this crystalline perfection, SmBCO thin films present excellent superconducting properties: T _c0 > 90 K, transition width 0.4 K, and J _c(77 K) > 2 MA/cm².     

Component composition and strain of barium-strontium titanate ferroelectric films

The effect of the ratios of the cationic components and internal strains on the critical temperature T _c and the dielectric characteristics of BSTO ferroelectric films grown on α-Al₂O₃ [1012] and LaAlO₃ substrates were investigated. Ion backscattering diagnostics revealed a barium deficiency in the surface layer of the films and showed that the films differ in structural quality. Pis’ma Zh. Tekh. Fiz. 25, 50–60 (October 12, 1999)     

Growth and Characterization of YBCO Thin Films by Sequential Deposition and Annealing

A novel thin film growth procedure, sequential deposition and annealing (SDA), which contains the advantages of both in situ and ex situ procedures, was proposed. Y₁Ba₂Cu₃O_{7 – x} (YBCO) high temperature superconducting thin films were grown and characterized by the SDA procedure. Purely c-axis-oriented YBCO thin films with no foreign phases and other oriented grains were successfully prepared. The superconducting transition properties of SDA-grown YBCO thin films were measured by measurement of inductance and resistance. The inductance measurements gave a T _c ^onset of 85 K and a T _c of 5 K. The resistance measurements gave a T _c ^onset of 90 K and a T _c of 5 K. Atomic force microscopy studies showed that SDA-grown YBCO thin films had micrometer-size grains surrounded by many nanometer-size grains. The nanometer-size grains in SDA-grown YBCO thin films are responsible for degradation of superconducting transition properties.     

Interaction between the Ferromagnetic Dots and Vortices: Numerical Calculation and Experimental Results

Enhancing the pinning force in high-T _c superconductors can be achieved by externally introduced periodic magnetic dots. We numerically calculate the interaction between ferromagnetic dots and vortices in high-T _c superconductors. The London equation is used to generate two-dimensional vortex lattice. In the matching condition, we calculate the attraction force between magnetic dots and vortices. It is found that in an ideal condition, the pinning force of the magnetic dot reaches 2.5×10⁻¹¹ N that is more than one order magnitude stronger than the intrinsic pinning force in YBa₂Cu₃O₇ thin films. In the experimental side, we use a novel nano-technique to deposit periodic submicron Ni dots on YBa₂Cu₃O₇ thin films. The current versus voltage characteristics of an YBa₂Cu₃O₇ thin film strip with uniform Ni dots are measured at various temperatures and magnetic fields. They are compared with the current versus voltage characteristics of a bare YBa₂Cu₃O₇ thin film strip without magnetic dots. It is found the critical current value of the strip with Ni dots reduces with a much slower pace as the magnetic field strength increases in comparison with the value of the bare sample.     

Quantized Vortices and Diamagnetic Precursor to the Meissner State in High-T c Superconductors

We report the magnetic imaging for underdoped and optimally-dopedLa_2–x Sr _x CuO₄ (LSCO) thin films on single substrates and nearly optimallydoped YBa₂Cu₃O_7–x (YBCO) thin films on tricrystal substrates in the temperature range both below and above T _c using scanning SQUID microscopy. Below T _c, clear integer- and half-integer quantized vortices were observable. Above T _c, however, the inhomogeneous diamagnetic domains appeared. The local diamagnetic domains that led to the Meissner state were found in the broad temperature range for underdoped samples and in the narrow limited temperature range for optimally-doped samples. The results provide evidence that local diamagnetic domains are closely related to the pseudogap state. The continuous connection of the domain state above T _c with the state of a half-integer vortex at the tricritical point in the YBCO film below T _c also indicates that the diamagnetic domains are also closely related to the occurrence of d_x ^{2-y 2}-wave superconductivity.     

Solution-sol-gel processing of superconductors

Bulk materials and thin films of pure and homogeneous YBa₂Cu₃O_7−x and Bi₂Sr₂CaCu₂O_8+x compounds were prepared by a nanocomposite solution-sol-gel (SSG) method. The superconducting oxides of YBa₂Cu₃O_7−x and Bi₂Sr₂CaCu₂O_8+x were prepared at very low temperatures i.e. 750°C and 850°C, respectively by SSG method. Pellets sintered from these nanophasic sol powders showed sharp resistivity drops atT _c ∼ 90°K for YBa₂Cu₃O_7−x andT _c∼67°K for Bi₂Sr₂CaCu₂O_8+x . Thin films were prepared using triphasic sol of Y, Ba, Cu and tetraphasic sol of Bi, Sr, Ca and Cu on MgO and SrTiO₃ substrates. The triphasic sol coated on SrTiO₃ substrates and calcined at 800°C for 12h showed the formation of superconducting phase, YBa₂Cu₃O_7−x with preferred orientation along theC-axis. X-ray diffraction patterns of the Bi₂Sr₂CaCu₂O_8+x films on MgO substrate showed the formation of the superconducting phase with preferential orientation along the C-axis and the microwave absorption data as a function of temperature of this film revealed the onset temperature to be 90°K.     

Investigations on Tl-2223 thin films fabricated through ultrasonic spray pyrolysis under oxygen deficient conditions

In this paper we have shown that polycrystalline films corresponding to Tl-2223 phase can be grown by employing high thalliation temperatures and short thalliation times. Ultrasonically deposited precursor films corresponding to Ba₂Ca_2.2Cu_3.3O_x(Ag_y) have been thalliated under high vacuum (∼ 10^-5 torr) at 890°C to obtain single phase Tl-2223 films. An off-stoichiometric and unreacted pellet of composition Tl_2.05Ba₂Ca₂Cu₃O_z has been used as source of Tl. We have shown that oxygen ambient is not necessary for the growth of Tl-2223 phase. The as-thalliated films have T_c’s in the range 123 K ±0.70 K. TheT _c has been found to be independent of the addition of AgNO₃ to the precursor. The zero field transportJ _c has been observed to be > 1.2 X 10⁵ A/cm² at 77 K. NearT _c (110 K-122 K),J _c has been observed to follow the power lawJ _c ∞ (1-T/T _c )_p,p 2. A power law withp tt 1.4 has been observed for the temperature range 70 K-110 K. An optimum doping of Ag has been observed to induce about 25% increase inJ _c and it also leads to uniform and enlarged grain growth. The surface morphology of Ag free samples contains plate like grains having arbitrary shapes. In contrast to this 0.35 Ag doped sample exhibits nearly rectangular plate like grains     

Influence of working gas pressure on the properties of thin films of high-temperature superconductors obtained by magnetron sputtering

The surface morphology, composition, microstructure, and electrical properties of thin films of YBa₂Cu₃O_7−x high-temperature superconductors, obtained by inverted magnetron sputtering, have been studied as a function of the pressure of the working gas mixture and results are presented. The main parameters of the magnetron discharge plasma near the substrate were determined by analyzing the characteristics of Langmuir probes. Changes in the properties of the films are considered to be caused by bombardment of the growing film with plasma ions accelerated in the floating potential field of the substrate. Films obtained at a pressure of 28 Pa and substrate temperature of 630 °C had a superconducting transition end temperature T _c ,off=89 K and a critical current density j _c =2 MA/cm² (at 77 K) and were free from secondary phase particles larger than 10 nm. Pis’ma Zh. Tekh. Fiz. 24, 80–85 (February 26, 1998)     

Low Loss Sintered Dielectric Resonators with HTS Thick Films

The combination of high-Qdielectric resonators and high-temperature superconducting (HTS) films offer many advantages in the area of cellular and satellite communications. The high cost of single crystal dielectrics and HTS thin films may be unattractive in certain applications. Superconducting thick films and polycrystalline ceramic dielectrics offer a high performance, low-cost alternative to high-Qthin film/single crystal dielectric resonators. The loss of polycrystalline ceramics of A1₂O₃, Ba(Mg_1/3Ta_2/3)O₃ (BMT), and Zr_0.875 Sn_0.25Ti0.875O₄ (ZTS) has been studied. Alumina, A1_2Oin3, has been studied as a model material for dielectric loss. Theory predicts that the loss in single crystal sapphire should follow aT ₅ dependence. However, at low temperatures the loss is dominated by extrinsic losses due to crystal imperfection, residual dopant atoms, dislocations, and other lattice defects and theT ₅ dependence does not hold. In polycrystalline alumina the intrinsic loss is immediately masked by these extrinsic losses, even at room temperature, and a simpleT dependence is observed. Results on polycrystalline alumina show that Q’s well in excess of 105 at 10 GHz and 77 K can be achieved in a design made compact by the use of a HTS thick film shield.     

The As-prepared surfaces of C-axis-oriented Nd1Ba2Cu3Oy thin films characterized using scanning probe microscopes

Recently, superconducting Nd₁Ba₂Cu₃O_y (Ndl23) thin films with high superconducting transition temperature (T _c) have been successfully fabricated at our institute employing the standard laser ablation method. In this paper, we report the results of surface characterization of the Nd123 thin films using an ultrahigh vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) and an atomic force microscope (AFM) system operated in air. Clear spiral pattern is observed on the surfaces of Nd123 thin films by STM and AFM, suggesting that films are formed by two-dimensional island growth mode. Contour plots of the spirals show that the step heights of the spirals are not always the integer or half-integer number of thec-axis parameter of the structure. This implies that the surface natural termination layer of the films may not be unique. This result is supported byI-V STS measurements. The surface morphology of the Nd123 thin films is compared with that of thec-axis-oriented Y₁Ba₂Cu₃S_y thin films. Surface atomic images of the as-prepared Nd123 thin films are obtained employing both STM and AFM. STS measurements show that most of the surfaces are semiconductive. The results of STS measurements together with the fact that we are able to see the surface atomic images using scanning probe microscopes suggest that exposure to air does not cause serious degradation to the as-prepared surfaces of Nd123 thin films.