电沉积液初始pH值对电沉积制备钽基RuO2·nH2O薄膜的影响

以RuCl3·2H2O水溶液为电沉积液,通过恒流电沉积法在钽箔上电沉积一层RuO2·nH2O薄膜;研究了电沉积液初始pH值对制备RuO2·nH2O薄膜的影响.分别采用SEM、EDS、XRD、粒度分析仪(DELSA 440SX analyzer control)对薄膜的形貌、薄膜元素、溶胶的Zeta电位及薄膜的物相进行观察与测试.结果表明,电沉积液初始pH值越高,RuO2·nH2O薄膜越疏松,龟裂纹越大,与基体结合力也越差.初始pH值为2.3时,薄膜的孔隙率最佳,综合性能指标最好.     

Bi2-xSbxTe3温差电材料薄膜的电化学制备、表征及性能研究

采用电化学控电位沉积的方法制备了Bi2-xSbxTe3温差电材料薄膜.通过ESEM、XPS、XRD、EDS等方法对电沉积薄膜的形貌、结构和组成进行了研究,并测试了在不同电位下制备的Bi2-xSbxTe3薄膜的温差电性能.研究结果表明,在含有Bi3+、HTeO+2和SbO+的溶液中,采用控电位沉积模式,可实现铋、锑、碲三元共沉积,生成锑掺杂的Bi2Te3化合物Bi2-xSbxTe3.通过调节沉积电位,可控制电沉积Bi2-xSbxTe3薄膜的掺杂浓度,从而影响材料的温差电性能.控制沉积电位为-0.5V条件下制备的温差电材料薄膜的塞贝克系数最大,为213μV·K-1,其组成为Bio.5Sb1.5Te3.随着沉积电位的负移,电沉积出的Bi2-xSbxTe3薄膜的结晶状态将逐渐由等轴晶转变为树枝晶.研究证明,电沉积方法可以制备出性能优异的薄膜温差电材料.     

Bi-Te-Se热电薄膜的电化学沉积

在含有Bi 3＋、HTeO2＋、Se4＋离子的水溶液中通过电化学方法实现了Bi2Te3-ySey热电薄膜沉积,研究了电沉积Bi2Te3-ySey的阴极极化曲线及热电薄膜的生长过程,通过电子显微镜（SEM）和能谱仪（EDS）等手段对热电薄膜进行了形貌、成分分析。结果表明电解液的离子组成、沉积电位对薄膜成分、形貌有较大影响。在-0.07V沉积电位下制备的热电薄膜Bi2Te2.75Se0.95晶粒大小均匀,结构致密。     

低In电解液电沉积制备CuInSe2吸收层

通过线性电位扫描分析了低In电解液中的阴极电化学反应,结果表明柠檬酸钠可以降低Cu2+的活性,而H2SeO3的加入可导致阴极上Se元素与Cu+和In3+发生复杂的协同反应.低In电解液中恒电位沉积的薄膜与CIS的化学计量比相差较大,分段电位的恒电位沉积得到的薄膜更接近于CuInSe2(CIS)化学计量比.薄膜在N2气氛上退火处理,得到了黄铜矿结构CIS薄膜,禁带宽度为1.06eV.     

化学浴法Cu2S纳米晶薄膜的制备及其光学特性研究

利用化学浴沉积法,以EDTA为络合剂,CuSO4·5H2O和Na2S2O3为前驱体溶液制备了硫化亚铜纳米薄膜,用FESEM、XRD、光学显微镜研究了前驱体浓度、络合剂的浓度、溶液的pH值、反应温度等因素对硫化亚铜纳米薄膜的表面形貌、晶粒大小与晶体结构的影响.结果表明,在最佳的生长条件下可以制备晶粒匀一、结构致密的硫化亚铜纳米薄膜,紫外可见吸收光谱表明硫化亚铜薄膜具有一定的透光性,并对红外光有很好屏蔽的作用.     

工艺参数对Ni-W-P-CeO2-SiO2纳米复合薄膜材料微观组织及性能的影响

通过Ni,W,P和CeO2,SiO2纳米颗粒的脉冲共沉积,在普通碳钢表面制备了Ni-W-P-CeO2-SiO2纳米复合薄膜材料,研究了电解液pH值和电解液温度对纳米复合薄膜材料电沉积过程的影响,采用化学组成、沉积速率、显微硬度和微观组织进行表征.结果表明:增加电解液pH值和电解液温度,纳米复合材料晶粒得到细化,沉积速率和显微硬度增加.当电解液pH值为5.5、电解液温度为60℃时,纳米复合薄膜材料晶粒细小,沉积速率最快,为28.87μm/h,显微硬度最高,为Hv673,若继续增加电解液pH值和电解液温度,沉积速率和显微硬度又开始降低.     

Cu2O薄膜的制备与表征

以透明导电玻璃ITO和铜片为工作电极,用0.1mol/L乙酸铜和0.02mol/L乙酸钠的混合溶液作为电解液,通过两电极电化学沉积方法制备了Cu2O薄膜。讨论了pH值和沉积电位对Cu2O薄膜的影响,利用X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、X射线光电子能谱(XPS)对薄膜进行表征。结果表明,两电极电化学沉积法制备Cu2O薄膜最佳的pH值为5.7～5.9,沉积电位为1.1～1.3V。此外,分析了沉积电位对Cu2O薄膜形貌的影响。     

电化学沉积法制备氧化锌薄膜及性能研究

以硝酸锌为原料,CTAB和硝酸钾为电沉积添加剂,以导电石墨板为对电极,采用方波电位沉积的方法在氧化锡铟（ITO）导电玻璃基底上制备出透明的ZnO薄膜,采用X射线衍射、原子力显微镜和光学透过谱等技术对不同沉积条件下薄膜的结晶特性、表面形貌、光学性质等进行了研究,结果表明,应用方波电位法制备氧化锌薄膜的优化条件为：沉积时间6min、Zn（N03）2、浓度0．05mol／L、沉积温度为80℃、退火温度500℃。制备的ZnO薄膜在可见光范围内的平均透光率〉85％,且表面平整度高,晶粒尺寸较小。     

Bi2-xSbxTe3温差电材料薄膜的电化学制备、表征及性能研究

采用电化学控电位沉积的方法制备了Bi_2-xSb_xTe₃温差电材料薄膜.通过ESEM、XPS、XRD、EDS等方法对电沉积薄膜的形貌、结构和组成进行了研究,并测试了在不同电位下制备的Bi_2-xSb_xTe₃薄膜的温差电性能.研究结果表明,在含有Bi³⁺、HTeO₂⁺和SbO⁺的溶液中,采用控电位沉积模式,可实现铋、锑、碲三元共沉积,生成锑掺杂的Bi₂Te₃化合物Bi_2-xSb_xTe₃.通过调节沉积电位,可控制电沉积Bi_2-xSb_xTe₃薄膜的掺杂浓度,从而影响材料的温差电性能.控制沉积电位为-0.5V条件下制备的温差电材料薄膜的塞贝克系数最大,为213μV·K^-1,其组成为Bi_0.5Sb_1.5Te₃.随着沉积电位的负移,电沉积出的Bi_2-xSb_xTe₃薄膜的结晶状态将逐渐由等轴晶转变为树枝晶.研究证明,电沉积方法可以制备出性能优异的薄膜温差电材料.     

阴极恒电流法制备SmS光学薄膜

以SmCl3·6H2O和Na2S2O3·5H2O为原料,采用电沉积法在单晶硅(100)和玻璃基板制备了SmS光学薄膜.采用XRD、AFM和紫外可见光分光光度计对薄膜进行了表征.研究了[Sm3 ]/[S2O32-]、溶液的pH值对于薄膜的物相的影响.结果表明:在[Sm3 ]/[S2O32-]=1:2,控制溶液pH值为4.50以及沉积1h的条件下,可制备出70nm厚单一晶相且表面比较平整的SmS薄膜,薄膜具有(331)方向的取向性.紫外光谱测试表明所制备的SmS薄膜具有290～300nm的紫外吸收特性,薄膜的禁带宽度约为3.6eV.     

Growth and characterization of electrosynthesized iron selenide thin films

Iron selenide (FeSe) thin films were electrodeposited onto indium doped tin oxide coated conducting glass (ITO) substrates at various bath temperatures from 30 °C to 90 °C in an aqueous electrolytic bath containing FeSO₄ and SeO₂. The deposition mechanism was investigated using cyclic voltammetry. The appropriate potential region where the formation of stoichiometric iron selenide thin films' occurs was found to be −1100 mV versus SCE. X-ray diffraction studies revealed that the deposited films are found to be hexagonal structure with a preferential orientation along (002) plane. The parameters such as crystallite size, strain, dislocation density are calculated from X-ray diffraction studies. Optical absorption measurements were used to estimate the band gap value of iron selenide thin films deposited at various bath temperatures. Scanning electron microscopy (SEM) was used to study the surface morphology. The composition of FeSe thin films was analyzed using an energy dispersive analysis by X-rays (EDX) set up attached with scanning electron microscopy. Preliminary studies for photoelectrochemical solar cells based on iron selenide thin films were carried out and the experimental observations are discussed.     

Effect of air annealing on structural, optical, microscopic, electrical properties of cadmium selenide thin films

Cadmium selenide films have been deposited on glass substrate dip method. The resultant films were annealed upto 473 K temperature. The structural properties of cadmium selenide thin films have been investigated by X-ray diffraction techniques. The X-ray diffraction spectra showed that cadmium selenide thin films are polycrystalline. As deposited sample shows cubic phase whereas sample annealed at 473 K shows hexagonal phase. The optical properties showed direct band gap values were found to be in the region of 1.82–1.55 eV. The electrical studies shows conductivity increases with increase in annealing temperature. The optoelectric and structural data are discussed from the point of applications based on achieving high performance devices.     

Influence of heating rate on the hysteresis in the phase transition in silver selenide thin films

The electrical resistance of vacuum-deposited silver selenide thin films, of thickness 70 nm was measured in the temperature range from 300 to 430 K, at different heating rates and at a pressure of 2×10⁻⁵ mbar. The films were annealed at 430 K at a pressure of 2×10⁻⁵ mbar for an hour. It is found that annealed silver selenide films undergo a structural phase transition exhibiting hysteresis. The structural phase transition with hysteresis in silver selenide thin films is influenced by the heating rates of the films. The effect of the heating rate on the phase transition temperature and hysteresis are discussed taking into account the presence of potential barrier and the defects. Our studies reveal that hysteresis width decreases with decreasing heating rates.     

Effect of thermal annealing on properties of zinc selenide thin films deposited by chemical bath deposition

Zinc selenide films have been deposited on glass substrate by chemical bath deposition method. The resultant films were annealed up to 473 K temperature. The structural properties of zinc selenide thin films have been investigated by X-ray diffraction techniques. The X-ray diffraction spectra showed that zinc selenide thin films are polycrystalline and have a cubic structure. The most preferential orientation is along the (111) direction for all films. The lattice parameter, grain size, and microstrain were calculated and correlated with annealing temperature. The optical properties showed direct band gap values were found to be in the region of 2.69–2.81 eV. The electrical studies shows conductivity increases with increase in annealing temperature. The optoelectric and structural data are discussed from the point of applications based on achieving high performance devices.     

纳米金属氧化物制备多晶Cu(In,Ga)Se2薄膜反应过程及其性能研究

以铜铟镓纳米金属氧化物为起始原料, 采用化学还原+固体硒源后硒化的方法在不锈钢表面制备出多晶Cu(In,Ga)Se₂ (CIGS)薄膜。采用场发射扫描电镜、高分辨透射电镜、能谱分析和X射线衍射等方法对制备过程中材料组成和结构的演变进行了研究, 采用霍尔效应测试仪和吸收光谱分析等对多晶CIGS薄膜的性能进行了表征。研究结果表明, 纳米金属氧化物主要含CuO、In₂O₃、Ga₂O₃和铜-铟、铜-镓二元合金氧化物等成分, 在还原反应中逐渐转变成Cu₁₁In₉、Cu₉In₄等产物, 同时薄膜中形成大量孔隙; 硒化过程中, 硒蒸气沿孔隙通道进入还原产物的晶格, 反应生成CIS和CGS, 从而形成具有黄铜矿结构的多晶CIGS薄膜; 多晶CIGS薄膜表面晶粒排列紧密, 属于p型半导体, 其载流子浓度为2.3×10¹⁵ cm^-3, 迁移率为217 cm²/(V·s), 电阻率为36 Ω·cm, 带隙宽度约为1.15 eV。     

Optical absorption and light-generated current density in chemically deposited antimony sulfide selenide thin films used for solar cell development

Journal of Materials Science: Materials in Electronics - Thin films of antimony sulfide selenide, Sb2SxSe3?x, are viable optical absorbers in heterojunction solar cells. Crystalline thin...     

Photoelectrochemical studies on spray deposited copper selenide thin films

Thin films of copper selenide have been deposited by spraying a mixture of aqueous solutions (0.50 M) of copper chloride hydrate (CuCl₂·2H₂O) and selenourea [H₂NC(Se)NH₂] on preheated fluorine doped tin oxide coated glass substrates at various substrate temperatures. The cell configurations copper selenide/0.5 M K₂SO₄/C are used for studying the capacitance–voltage (C–V) characteristics in the dark, current–voltage (I–V) characteristics in dark and under illumination, photovoltaic power output and spectral response characteristics of the as deposited films. Photoelectrochemical study records that as deposited copper selenide thin films are of p-type. The spectral response characteristics of the films at room temperature show a prominent, sharp peak at 550 nm. The measured values of efficiency (η) and fill factor (FF) are found to be 0.99 % and 0.51 respectively for film deposited at 350 °C.     

The effect of nanoparticle on microdomain alignment in block copolymer thin films under an electric field

Controlling microdomain structure of block copolymers (BCPs) under electric field has been one of the most challenging research tasks. In this study, we examined the effect of nanoparticles on the microdomain orientations in BCP/nanoparticle thin films under electric field using cross-sectional transmission electron microscopy experiments. Gold and cadmium selenide nanoparticles with a tailored surface property were incorporated to control microdomain orientations in BCP/nanoparticle thin films by varying dielectric constant of one constituting block. It was revealed that the microdomain orientation of BCP/nanoparticle thin films under electric field was suppressed by the introduction of gold nanoparticles. Thus, it can be inferred that gold nanoparticles can show a shielding effect under external electric field. The effect of complementary parameters such as NPs concentration, exposure time, and field strength were also demonstrated. In addition, it was also found that the suppression effect lessened with cadmium selenide nanoparticles having a dipole from the noncentrosymmetric structure. This work can provide fundamental data for understanding of microdomain alignment behavior of BCP/nanoparticle system under electric field.     

Structural, compositional, thermoelectrical and photoelectrochemical properties of CdSe thin films

Cadmium selenide thin films have been deposited on non-conducting glass and stainless steel substrates. Films were characterized by X-ray diffraction, atomic absorption spectroscopy. The electrical and thermoelectrical properties also studied. The X-ray diffraction analysis shows that the film samples are in cubic crystal structure. Film was found to be cadmium deficient. The efficiency of photoelectrode was found to be 1.15 % using sulphide-polysulphide electrolyte.     

Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films

We have grown indium selenide thin films using magnetron sputtering method. The influence of indium concentration on the structural, optical and electrical properties was studied. The concentration of indium in indium selenide thin films was varied by adjusting the sputtering power from 40 to 80 W while keeping the substrate temperature and argon pressure constant. The β-phase, which only exists at elevated temperatures in bulk single crystals, can persist at room temperature in the In-rich films. The β-phase thin film with smaller band gap has an electrical resistivity about four orders of magnitude lower than that of the γ-In₂Se₃ thin film, which is also stable at room temperature. Furthermore, the single-phase γ-In₂Se₃ thin film was then assembled in visible-light photodetector which shows a fast, reversible, and stable response. These results indicate the possibility of using γ-In₂Se₃ thin film in various next-generation photoelectric and optical-memory applications.