宇宙（天体）是存在的 宇宙（天体）是不存在的

宇宙是天体，但天体（宇宙）是存在的，同时又是不存在的。这句话在现代文明面前是无法理解的，岂不知宇宙的根本是矛盾，所谓矛盾就是说，宇宙不是一是的存在，而是正反二元的同时存在。我们姑且承认宇宙是二元的，但即不存在又存在还是无法理解的。简单的说，现代物理学概念“重心”是根本不存在的，作为普遍性的人是根本不存在的，为什么这样说呢？原本的说，物体是有重量而已，无所谓重心，人只是有特殊个体而已。而无所谓人。这就是说，宇宙是浑然的，无所谓有宇宙或者说没有宇宙。所谓宇宙是存在的，就是说人们站在二维的科学的基点上看，宇宙是一是的具体的物质的实实在在的：所谓宇宙是不存在的，就是说宇宙实际上是立体存在，没有任何特征，既没有宇宙之砖，又没有形态，就像重心是抽象意义上的存在。     

质量源于责任 责任重于泰山

三鹿问题奶粉事件，再次以血的教训对中国企业敲响了警钟：质量是企业的生命。在企业发展过程中，我们提出了品牌建设“六要素”原则：“产品质量是核心，知识产权是内涵，广告宣传是支撑，企业形象是引力，用户亲和力是源泉，市场占有率是目标”。     

因材施教 育人为本

教师要具备必要的敬业精神，忠诚党的教育事业；教师要热爱学生，没有爱就没有教育，教育是公平公正的；教师是学生的表率，是学生践行的楷模；教师更是学识渊博，执着进取，能力超群的人，在教育教学上学会游刃有余，是学生的百科全书；教师是执着永不不服输的人；更重要的是教师应当有强烈的责任意识，才能培养出来的是健康心理，健康人格的学生。     

煤炭企业合同标准化管理思考

合同是企业经营管理的重要内容，是实现经营行为的主要手段，是现代化管理的必然要求。如果要最大限度发挥合同的作用，就必须加强合同管理，加强合同的标准化管理。因为标准化是制度化的最高形式，是规范化的最高要求，是科学化的最佳途径。只有加强合同的标准化管理，才能避免合同风险，规范经营行为，实现经营目标，提高企业竞争实力。     

浅谈建设项目在工程设计阶段造价控制与管理

工程设计是工程项目建设的首要环节，是整个工程建设的灵魂，是对拟建工程的实施在技术上和经济上所进行的全面而详尽的安排，是建设项目进行全面规划和具体描述实施意图的过程，是组织施工的依据，是科学技术转化为生产力的纽带，是处理技术与经济关系的关键性环节，是确定与控制工程造价的重点阶段。先进合理的工程设计，对于缩短工期、节约投资、提高效益起着关键性的作用。而节约投资，提高效益的关键所在，则是必须抓好设计阶段前的工程造价控制。     

嘉绍大桥让沪绍“双人舞”

双城，这次是我们的飞跃重洋，不是英国作家狄更斯的小说，也不是华人学者李欧梵的专著。这次是城与城之间建筑艺术的合谋。不过不是密议，而是大张旗鼓。不要把“双城计”写成“双城记”，“计”是策略，“记”是叙述，“计”是当下，“记”在过往，“计”是左奔右突左右逢源，而“记”唯有感叹。     

浅谈如何上好小学的数学课

兴趣是人的一种个性的心理特征，是在一定的情感体验下，产生的一种积极探索某种事物或某种活动的意识倾向。兴趣对学生来是学习的动力，是求知的源泉，是成功的奠基石。数学这门学科，自古以来就被认为为是理性最强的学科，需要聪明的大脑和天赋才能学好的，其实不然，对于天真浪漫的小学生来讲，他们接受各种文化知识的能力是等同的，那么如何才能学好数学呢？     

对人事干部工作的理性思考

人事干部是党和国家人事政策法规的执行者，肩负重任，关系着广大干部职工的切身利益。做好人事工作，道德品质是根本，综合能力是保证，思想修养是关键。     

论教育者的继续教育

论教育者的继续教育株洲工学院廖道政［编者按］这篇文章谈的是教育者的再教育，是乎与包装无直接关系，在此发表这篇文章编者是这样考虑的，首先，教育者的含义是广泛的，并非学校里才有，我们说社会是所大学，每个人都是教育者，也是被教育者。其次，当今社会，科技高速...     

硬软及硬度试验

硬和软的概念来自于日常生活和生产实践。未成熟的柿子是硬的，熟透的柿子是软的；干燥的土块是硬的，湿润的泥土是软的；玻璃是硬的，木材是软的；钢铁是硬的，滑石是软的。同样是钢材，经淬火和氨化处理后表面就变硬。由此可见，硬和软是有条件的对B对的。硬度，通俗地说，是固体材料或物品软硬程度的定量表示。严格地说，是固体材料或物品抵抗弹性变形、塑性变形或破坏的能力，或者是抵抗其中两种或三种同时发生的能力。例如，硬度作为矿物的物理性质之一，是矿物抵抗外来机械作用特别是划痕作用的能力；作为材料的机械性能之一，是材料…     

氧气对MWPCVD制备金刚石膜的影响

在水冷反应室式微波等离子体化学气相沉积装置中以混合的CH4/H2/O2为反应气体,研究了O2浓度对制备金刚石膜的影响.实验发现,很低浓度的O2会显著促进金刚石的沉积,并稍稍抑制非晶C的沉积,因而沉积膜中非晶C的含量急剧下降;较高浓度的O2会同时抑制金刚石和非晶C的沉积,但由于抑制金刚石的作用更强烈,沉积膜中非晶C的含量反而有所升高.另外,O2的存在,有利于沉积颗粒较小的金刚石膜.     

Broad band photoluminescence studies of diamond layers grown by hot-filament CVD

Photoluminescence and Raman spectroscopy were employed to investigate the broad band luminescence in thin diamond films grown on a silicon substrate by the HF CVD technique. The broad band luminescence with a maximum emission at 1.8–2 eV observed for CVD diamonds is characteristic for amorphous carbon with sp²-hybridized carbon bonds. As was shown by the Raman spectroscopy our diamond layer contained certain amounts of amorphous carbon phase and diamond nanocrystals which were the source of an additional energy state within the diamond energy gap. The experimental results precluded the possibility of broad band luminescence being due to the electron–lattice interaction. The amorphous carbon and diamond nanocrystals admixture in polycrystalline diamond layer introduced a defect state in the energy gap not in the form of point defects but rather in the form of a line or extended defects. In consequence these extended defects were responsible for the broad PL spectrum in the CVD diamond films.     

Characterization of cathodically deposited carbonaceous films on a silicon substrate

Carbon-based deposits were electrochemically formed on silicon substrates in ethanol at room temperature. This work was based on the work reported by Namba, who described the electrochemical deposition of diamond from organic solutions. The deposits were analysed using a scanning electron microscope, energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and electrochemical impedance spectroscopy. Scanning electron micrographs showed some crystalline deposits on the silicon. EDS was unable to identify carbon in the film, but did reveal impurities such as sodium, potassium, calcium and zinc. It was later established that the impurities most likely came from impurities in the graphite used for a counter electrode. XPS showed the presence of carbon species, and subsequently Raman spectroscopy was used to classify further the carbon deposits. Raman spectroscopy showed the presence of amorphous carbon in some films, but no diamond peak was observed for any of the films. EIS revealed that the impedance of the deposited films was nearly identical to that of the uncoated silicon, and did not resemble the impedance of diamond. Thus, in this work, carbon–based films were formed electrochemically, but these films were not diamond.     

在硅和硬质合金基体上金刚石薄膜生长研究

在硅和硬质合金基体上，用热丝CVD法生长出金刚石薄膜。利用X衍射、拉曼谱和扫描电镜对金刚石薄膜的结构形貌进行了检测，并与天然金刚石对比分析。     

直流热阴极CVD金刚石薄膜生长特性研究

为了获得高质量的金刚石薄膜,采用直流热阴极化学气相沉积系统分别在不同基片温度和不同碳源气体含量条件下生长金刚石薄膜,利用Raman光谱、SEM和XRD检测方法研究了基片温度和碳源气体含量对金刚石薄膜生长特性的影响.结果表明,金刚石薄膜与基片Mo之间有Mo2C的过渡层存在;1000℃的温度能够促进金刚石晶体的生长,抑制其他碳杂质的形成,CH4体积分数为2%适于快速生长高纯度的金刚石薄膜.     

A comparative study of p-type diamond films using Raman and transport measurements

The influence of deposition temperature in the properties of synthetic diamond films grown by two different chemical vapor deposition (CVD) techniques, hot-filament- and microwave-plasma-assisted, was investigated. These samples were obtained using the optimal growth conditions previously achieved in this work. Raman spectroscopy was employed in order to investigate the diamond film quality as a function of the deposition temperature. It was found that the nondiamond carbon bands decrease as the deposition temperature increases for both the deposition methods, leading to higher-quality diamond films. The micro- and macro-Raman spectra showed that the nondiamond band is already present in a single diamond grain. Both techniques provided well homogeneous diamond films and with equivalently good quality. Boron-doped diamond films with different carrier concentration levels were also studied. In order to get details about the electrical properties of the films, resistivity as a function of the boron concentration—in association with Raman spectra—and temperature-dependent transport measurements were employed. The results showed that the boron doping is the main responsible for the conductivity and that the variable range hopping (VRH) mechanism dominates the transport in these doped diamond films.     

Diamond deposition on copper: studies on nucleation, growth, and adhesion behaviours

This paper presents a systematic study on diamond growth on copper by microwave plasma chemical vapour deposition (MPCVD). It includes the following four main parts. 1. Effect of substrate pre-treatment on diamond nucleation. 2. Effect of deposition conditions on diamond nucleation and growth. 3.Preparation of free-standing diamond films using copper substrate. 4. Adherent diamond coating on copper using an interlayer. In the first part we show that diamond nucleation on copper is strongly affected by the substrate pre-treatment. The residues of abrasives left in the surface of the copper substrate play an important role in the diamond nucleation. In the second part we show that the diamond growth rate increases with microwave power and gas pressure. The effect of the microwave power is mainly an effect of substrate temperature. Increasing methane concentration results in a higher nucleation density and higher growth rate, but at the cost of a lower film quality. Gas flow rate has little influence on the diamond nucleation density and growth rate. In the third part we demonstrate the possibility of preparing large area free-standing diamond films using copper substrate, which has nearly no carbon affinity and usually leads to weak adhesion of the diamond films. The normally observed film cracking phenomenon is discussed and a two-step growth method is proposed for stress release. In the fourth part we show that adherent diamond coating on copper can be obtained using a titanium interlayer. Residual stress in the films is evaluated by Raman spectroscopy. It is found that with increase in the film thickness, the diamond Raman line shifts from higher wave numbers to lower, approaching 1332 cm–1. The stress variation along the depth of the film is also analysed using Airy stress theory.     

Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition

Silicon carbide films with different carbon concentrations x(C) have been synthesized by inductively coupled plasma chemical vapor deposition from a SiH(4)/CH(4)/H(2) gas mixture at a low substrate temperature of 500?°C. The characteristics of the films were studied by x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared absorption spectroscopy, and Raman spectroscopy. Our experimental results show that, at x(C) = 49?at.%, the film is made up of homogeneous nanocrystalline cubic silicon carbide without any phase of silicon, graphite, or diamond crystallites/clusters. The average size of SiC crystallites is approximately 6?nm. At a lower value of x(C), polycrystalline silicon and amorphous silicon carbide coexist in the films. At a higher value of x(C), amorphous carbon and silicon carbide coexist in the films.     

Influence of WC-Co substrate pretreatment on diamond film deposition by laser-assisted combustion synthesis

The quality of diamond films deposited on cemented tungsten carbide substrates (WC-Co) is limited by the presence of the cobalt binder. The cobalt in the WC-Co substrates enhances the formation of nondiamond carbon on the substrate surface, resulting in a poor film adhesion and a low diamond quality. In this study, we investigated pretreatments of WC-Co substrates in three different approaches, namely, chemical etching, laser etching, and laser etching followed by acid treatment. The laser produces a periodic surface pattern, thus increasing the roughness and releasing the stress at the interfaces between the substrate and the grown diamond film. Effects of these pretreatments have been analyzed in terms of microstructure and cobalt content. Raman spectroscopy was conducted to characterize both the diamond quality and compressive residual stress in the films.     

Photoelectron spectroscopy of ion-irradiated B-doped CVD diamond surfaces

Chemical vapour deposition (CVD) diamond films were irradiated by 1 keV argon ions at room temperature with doses ranging from 3.6 × 10¹² to 1.1 × 10¹⁶ Ar⁺ cm². The influence of sputtering on the valence band density of states of a boron-doped CVD diamond film was investigated by ultraviolet photoelectron spectroscopy and the changes in the plasmon features were observed by X-ray photoelectron spectroscopy of the carbon Is core level and its loss region. A gradual change from typical diamond features to amorphous carbon was observed after prolonged bombardment times. Above a critical dose D_crit of 5.8 × 10¹⁴ Ar⁺ cm² the damaged surface layer is characterized by a splitting of the C Is bulk peak into two components: a bulk-like diamond peak at 285.3 eV binding energy and a defect peak with 1 eV lower binding energy, which is attributed to the production of an amorphous sp²-rich carbon matrix. Moreover additional occupied states in the range of 0–4 eV binding energy, completely different to those observed on reconstructed diamond surfaces, were observed in the valence band spectra of the ion-irradiated diamond surface. These filled states can also be attributed to the amorphous carbon matrix which is formed at high doses. At very low doses (< 3 × 10¹⁴ ions cm²) only a band bending of the C Is diamond core level peak, along with the formation of some occupied states in the band structure at around 3.8 eV binding energy was observed. A comparison with annealed hydrogen-free CVD diamond surfaces shows some similarities concerning these filled states. The obtained spectra are compared with other crystalline and amorphous forms of carbon and the results are discussed in terms of an irradiation-induced change in the atomic structure of the surface. A comparison of ion bombarded and annealed diamond samples clearly shows that no graphitization takes place in the latter case.