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铝阳极氧化膜中温封孔工艺研究 总被引:1,自引:1,他引:1
铝阳极氧化膜的常温封孔工艺应用广泛,但厚膜封孔比较困难,染色膜封孔时多数染料都会流色,导致封闭质量不佳.为此,研究了一种新型的铝阳极氧化膜中温封孔工艺,并筛选了抑灰剂、封闭盐及其他辅助成分,研制出MS-05中温封孔剂,其分为A型和B型两种产品,其中A型是无氟、无镍的环保型封孔剂,B型是醋酸镍型封孔剂.与日本同类产品进行对比的结果表明:A型不适用于染色膜的封孔,但对无色和电解着色膜具有优异的封孔质量;B型与日本同类产品等效,适应于包括染色膜在内的所有阳极氧化膜,解决了厚膜封孔及染色膜封孔的问题.此外,还对常温封孔和中温封孔两种类型的封孔工艺的优劣做了分析和讨论. 相似文献
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由氟碳表面活性剂FC—4、硅偶联剂RJ—02及异戊醇配制了铝厚膜常温封孔添加剂并研究了它在Ni—F封孔液中的作用。试验结果表明,该封孔剂能抑制封闭粉霜并能通过延长封孔反应实现厚膜封孔。在Ni—F厚膜封孔液中添加ZrF6^2-及BF4^-不仅可以稳定槽液中的F^—及H^ ,而立可以促进厚膜封孔。 相似文献
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稀土元素对镀锌层三价铬彩色钝化膜耐蚀性的影响 总被引:1,自引:0,他引:1
为了提高三价铬彩色钝化膜的耐蚀性,在三价铬钝化液中加入稀土元素(La3+,Ce3+,Ce4+),通过乙酸铅点滴试验、Tafel曲线和盐水浸泡试验研究了稀土元素含量对镀锌层彩色钝化膜耐蚀性的影响。结果表明,加入稀土元素后,不用进行封闭处理也能提高钝化膜的耐蚀性,其中Ce4+的作用最显著,当钝化液中Ce(SO4)2.4H2O浓度为5.0 g/L时:钝化膜乙酸铅点滴耐蚀时间由镀锌层的19.33 s提高到157.56 s;腐蚀电位由-1.006 V正移至-0.982 V,腐蚀电流密度由3.268×10-5A/cm2减小到1.116×10-5A/cm2;耐盐水腐蚀能力提高,浸泡336 h仍未出现锈点,失重缓慢;钝化膜呈均匀的黄绿色,表面形成了均匀、平滑、较深的构槽,有利于提高膜层的耐蚀性。 相似文献
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铬酸盐钝化可以提高薄的化学镀镍层的耐蚀性,防止镀层在空气中变色。为消除铬对环境的影响,开发了无铬钝化工艺。常温下,将化学镀镍磷试样浸入无铬钝化液中浸泡3 min,在镀层表面制备了无色钝化膜。通过孔隙率测试、盐雾试验、极化曲线、扫描电镜及XPS能谱分析,对钝化膜的耐蚀性和成膜机理进行了研究。结果表明:镀层经钝化后耐变色性能获得极大提高,孔隙率由45个/dm2降低到3个/dm2;自腐蚀电位从-407 m V正移至-303 m V;自腐蚀电流密度降低了1个数量级以上;中性盐雾试验暴露100 h后保护评级由5级提高至10级。由此可见:钝化膜显著降低了化学镍磷镀层的孔隙率,并大大提高了化学镀镍层的耐蚀性。最后通过XPS发现,钝化膜主要物相组成为Ni O和Ni(OH)2。 相似文献
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Ion implantation is used to build a nanometer scale anti-ferromagnetic (AFM) cluster embedded exchange bias (EB) system. Ni film with a thickness of 100 nm is deposited on the Si (100) substrate using magnetron sputtering, 140 keV O+ is chosen to implant into the Ni film to form NiO AFM clusters, of which the size is estimated by X-ray diffraction based on synchrotron radiation (SR-XRD). By measuring hysteresis loop after field-cooling, significant shifts of loop along the applied field are observed. By increasing the implantation dose up to 3 x 10(17)/cm2 and annealing samples in N2 atmosphere, we discuss the origin of EB effect observed and the size confinement effect which lowers down the Néel temperature (T(N)) of NiO cluster to below room temperature. 相似文献
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采用搅拌摩擦加工(FSP)方法在Al基体中添加微米级Ni粉及(Ni+La_2O_3)混合粉末,制备Ni/Al及(Ni+La_2O_3)/Al复合材料。采用SEM、EDS及XRD对复合区微观结构及相组成进行分析,采用室温拉伸试验对Ni/Al、(Ni+La_2O_3)/Al复合材料力学性能进行了测试。结果表明:Ni/Al复合材料中主要成分为Al、Al3Ni和Ni粉团聚物,Ni粉团聚物尺寸粗大,形貌呈壳-核结构,核为团聚的Ni,壳为Al3Ni增强相层;La_2O_3对Al-Ni原位反应有较大影响,能够强化Al-Ni原位反应,生成更多增强相;La_2O_3阻碍了Ni粉的相互吸附和聚拢行为,从而减少了团聚现象;(Ni+La_2O_3)/Al复合材料的抗拉强度可以达到186 MPa,与Al基体(抗拉强度72 MPa)、纯Al FSP(抗拉强度90 MPa)、Ni/Al复合材料(抗拉强度144 MPa)相比,其抗拉强度分别提高了158%、107%、29%。 相似文献
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采用直流磁控溅射技术沉积了Ni49.54Mn29.59Ga20.87磁驱动形状记忆合金薄膜.XRD结果表明,Ni49.54Mn29.59Ga20.87薄膜室温下为5层调制型结构马氏体.X射线光电子能谱(XPS)分析表明,放置于空气中2个月的沉积态薄膜表面吸附少量氧和碳杂质.随Ar 刻蚀深度的增加,表面C杂质易被剥蚀掉,而部分氧杂质以MnO状态存在;Ni、Mn、Ga元素含量由薄膜表面向内层逐渐增加,化学价由正价向零价转变. 相似文献
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《Materials Science & Technology》2013,29(8):987-991
AbstractIn the present paper, the fabrication and characterisation of typical high temperature Ni(Ti+Hf) alloyed thin films produced by simultaneous sputter deposition from separate elemental Ni, Ti and Hf targets are presented. Film composition, determined by energy dispersive X-ray spectroscopy, was controlled by adjusting the ratio of powers applied to each target. Films deposited at room temperature had an amorphous structure and subsequent annealing at 550°C was carried out in a high vacuum environment, based on crystallisation temperature evaluation by differential scanning calorimetry (DSC). High temperature martensitic transformation, confirmed by DSC and variable temperature X-ray diffraction (XRD), was achieved by deposition of (Ti+Hf) rich Ni–Ti–Hf films. Any slight change of composition towards Ni rich reduced the transformation temperature. Atomic force microscopy and XRD illustrated that the films had a fine grain structure (~100 nm). One way shape memory effect was observed at ~200°C in a film with composition of 15·6 at.-%Hf. 相似文献
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Kenji Makihara Susumu MaruyamaYasutami Zota Mituru HashimotoJi Shi 《Thin solid films》2012,520(23):6831-6835
We studied the epitaxial growth of a Ni film prepared on a GaAs(001) substrate covered with a thin epitaxial MgO buffer film, assuming that this buffer film plays a key role in the epitaxial growth of the Ni film. The MgO and Ni films were deposited by radio-frequency magnetron sputtering of the MgO and Ni targets in pure Ar gas. First, a MgO film of thickness ranging from 78 to 4.4 nm was deposited on the GaAs(001) substrate at a temperature ranging from ambient temperature to 700 °C, and then, a 136-nm-thick Ni film was deposited on the MgO/GaAs substrate at a temperature range 300-500 °C. Using transmission electron microscopy and X-ray diffractometry, we showed that the MgO film grows with the epitaxial relationship MgO(001)[001]//GaAs(001)[001] on GaAs(001) at 500 °C, and that the structure of the Ni film depends on three factors: the MgO/GaAs substrate temperature, the MgO thickness, and the annealing condition of the MgO/GaAs substrate before the Ni deposition. In conclusion, we proved that the Ni film grows with the epitaxial relationship Ni(001)[001]//MgO(001)[001]//GaAs(001)[001] on MgO/GaAs with the 4.4-nm-thick MgO film when the MgO/GaAs substrate is annealed in situ at room temperature before the Ni deposition and maintained at 300 °C during the Ni deposition. 相似文献
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Mo2Ni3Si/NiSi复合材料涂层的滑动磨损行为 总被引:3,自引:0,他引:3
以Mo-Ni-Si合金粉末为原料,使用激光熔敷技术在1Crl8Ni9Ti不锈钢基材表面制备出Mo2Ni3Si/NiSi金属硅化物复合材料涂层.应用OM,SEM,EDS和XRD方法分析了涂层的显微组织.Mo2Ni3Si/NiSi复合材料涂层由初生的Mo2Ni3Si三元金属硅化物树枝晶和枝晶间的Mo2Ni3Si/NiSi共晶组织组成.在常温和高温滑动磨损条件下测试了涂层的耐磨性能.在常温滑动磨损条件下,Mo2Ni3Si/NiSi金属硅化物复合材料涂层的质量损失随着载荷的增加缓慢增加;在高温滑动磨损条件下,Mo2Ni3Si/NiSi金属硅化物复合材料涂层的质量损失随着温度的升高缓慢下降. 相似文献