氧化锌薄膜制备技术的评价

详细介绍了各种制备氧化锌薄膜的方法 ,包括磁控溅射法、化学气相沉积法、喷雾热解法、溶胶凝胶法、激光脉冲沉积法、分子束外延法、原子层外延生长法。阐述了这些方法的机理、沉积条件、所需的反应物以及制得的薄膜的性质。讨论并比较了各种方法的优缺点和应用于器件及工业生产的可能性     

半导体超薄层微结构的外延生长技术

半导体超薄层外延是超晶格与量子阱研究的技术基础。化学束外延、原子层外延、迁移增强外延、选择区域外延、激光辅助外延和低温Si外延等是在分子束外延和金属有机化学气相沉积基础上发展起来的几种新型超薄层外延技术。本文着重介绍了这些外延工艺的生长机理及其研究进展。     

Plasmachemische Gasphasenabscheidung – eine Technologie zur Deposition organischer und anorganischer Schichten. Plasma Enhanced Chemical Vapor Deposition – a Thin Film Technique for Organic and Inorganic Layers

Plasma enhanced chemical vapor deposition (PECVD) has a wide range of interest for thin films up to some μm thickness. It has widespread applications for high quality dielectric and semiconducting silicon alloys at deposition temperatures below 450 °C and pressures at 1 mbar on plane substrates and attracts growing attention for the surface modification of polymers. The PECVD takes advantages of the possibility to alter the film properties in a wide range easily, and the coatings can achieve a variety of useful properties unobtainable by other coating techniques. An environmentally friendly plasma chemical reactor etch cleaning of SiO_x, SiN_x and other film materials can be applied by changing the process gas and without breaking the vacuum. PECVD can be used in a fixed substrate and continuous substrate flow mode. An capacitively coupled parallel‐plate electrode assembly using radio‐frequency (RF) excitation of the discharge is most widely used for substrate areas up to a few square meters. Among the capacitively excitation an inductively and electromagnetically excitation at frequencies in the RF and UHF range has also succeeded in achieving a high rate PECVD. Two applications are presented to show the characteristics and the potential of this technique, the PECVD of semiconducting hydrogenated amorphous silicon, intrinsic or doped, with low power densities using monosilane as a source gas for solar cells, thin films transistors and digital image sensors and the plasma polymerisation of organosilicon protection layers employing the HMDSO monomer and high power densities for mirrors and lenses.     

Tunable double quantum dots in InAs nanowires defined by local gate electrodes

We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.     

Quantum dot nanostructures

Low dimensional structures (LDS) form a major new branch of physics research. These semiconductor structures have such a small scale in one- or two-dimensions that their electronic properties are significantly different from the same material in bulk form. These properties are changed by quantum effects. There is increasing interest in the preparation, study, and application of LDS. Their investigation has revitalized condensed matter science, in particular semiconductor materials. Complex LDS offer device engineers new design opportunities for tailor-made new generation electronic and photonic devices. New crystal growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) have made it possible to produce LDS in practice.These sophisticated technologies for the growth of high quality epitaxial layers of compound semiconductor materials on single crystal semiconductor substrates are becoming increasingly important for the development of the semiconductor electronics industry. This article is intended to convey the flavor of the subject by focusing on the technology and applications of self-assembled quantum dots (QDs) and to give an introduction to some of the essential characteristics.     

Three-temperature method as an origin of molecular beam epitaxy

Molecular beam epitaxy (MBE) is a highly sophisticated method of obtaining thin semiconducting compound films of high quality. This technique is now very helpful not only in the preparation of many new devices but also in solid state science and the development of entirely new materials.One of the main features of MBE today is the method of depositing stoichiometric compound films from molecular beams of the constituents impinging on a suitably heated substrate; this was developed in the 1950s and is known as the three-temperature method. The fundamental ideas of this co-evaporation method, its first applications and the extension of the method for the evaporation of ternary compounds are described.Further developments within the last decade have been in two directions: th first, the so-called hot-wall technique, is connected with deposition at close to thermodynamic equilibrium conditions and allows relatively high growth rates under a high vacuum environment; the second, a more sophisticated and universal process, is MBE which is an ultrahigh vacuum and cold-wall technique which is carried out at far from thermodynamic equilibrium.     

Ultrahigh‐Detectivity Photodetectors with Van der Waals Epitaxial CdTe Single‐Crystalline Films

Van der Waals epitaxy (vdWE) is crucial for heteroepitaxy of covalence‐bonded semiconductors on 2D layered materials because it is not subject to strict substrate requirements and the epitaxial materials can be transferred onto various substrates. However, planar film growth in covalence‐bonded semiconductors remains a critical challenge of vdWE because of the extremely low surface energy of 2D materials. In this study, direct growth of wafer‐scale single‐crystalline cadmium telluride (CdTe) films is achieved on 2D layered transparent mica through molecular beam epitaxy. The vdWE CdTe films exhibit a flat surface resulting from the 2D growth regime, and high crystal quality as evidenced by a low full width at half maximum of 0.05° for 120 nm thick films. A perfect lattice fringe appears at the interfaces, implying a fully relaxed state of the epitaxial CdTe films correlated closely to the unique nature of vdWE. Moreover, the vdWE CdTe photodetectors demonstrate not only ultrasensitive optoelectronic response with optimal responsivity of 834 A W^?1 and ultrahigh detectivity of 2.4 × 10¹⁴ Jones but also excellent mechanical flexibility and durability, indicating great potential in flexible and wearable devices.     

电化学原子层外延及其新材料制备应用研究进展

电化学原子层外延(ECALE)是电化学沉积和原子层外延技术的结合,通过运用欠电势技术交替电化学沉积化合物的组成元素一次一个原子层而实现外延生长.详细介绍了电化学原子层外延(ECALE)的基本原理和特点,分析了影响ECALE过程的关键要素,并进一步介绍了它在新材料制备中的应用研究进展.     

Borophene: New Sensation in Flatland

Borophene, a 2D allotrope of boron and the lightest elemental Dirac material, is the latest very promising 2D material owing to its unique structural and electronic characteristics of the X₃ and β₁₂ phases. The high atomic density on ridgelines of the β₁₂ phase of borophene provides a substantial orbital overlap, which leads to an excellent electron density in the conduction level and thus to a highly metallic behavior. These unique structural characteristics and electronic properties of borophene attract significant scientific interest. Herein, approaches for crystal growth/synthesis of these unique nanostructures and their potential technological applications are discussed. Various substrate-supported ultrahigh-vacuum growth techniques for borophene, such as molecular beam epitaxy, atomic layer deposition, and chemical vapor deposition, along with their challenges, are also summarized. The sonochemical exfoliation and modified Hummer's technique for the synthesis of free-standing borophene are also discussed. Solution-phase exfoliation seems to address the scalability issues and expands the applications of these unique materials to various fields, including renewable energy devices and ultrafast sensors. Furthermore, the electronic, optical, thermal, and elastic properties of borophene are thoroughly discussed and are compared with those of graphene and its “cousins.” Numerous frontline applications are envisaged and an outlook is presented.     

Electric field-assisted deposition of nanowires on carbon nanotubes for nanoelectronics and sensor applications

Manipulation and control of matter at the nanoscale and atomic scale levels are crucial for the success of nanoscale sensors and actuators. The ability to control and synthesize multilayer structures using carbon nanotubes that will enable the building of electronic devices within a nanotube is still in its infancy. In this paper, we present results on selective electric field-assisted deposition of metals on carbon nanotubes realizing metallic nanowire structures. Silver and platinum nanowires have been fabricated using this approach for their applications in chemical sensing as catalytic materials to sniff toxic agents and in the area of biomedical nanotechnology for construction of artificial muscles. Electric field-assisted deposition allows the deposition of metals with a high degree of selectivity on carbon nanotubes by manipulating the charges on the surface of the nanotubes and forming electrostatic double-layer supercapacitors. Deposition of metals primarily occurred due to electrochemical reduction, electrophoresis, and electro-osmosis inside the walls of the nanotube. SEM and TEM investigations revealed silver and platinum nanowires between 10 nm and 100 nm in diameter. The present technique is versatile and enables the fabrication of a host of different types of metallic and semiconducting nanowires using carbon nanotube templates for nanoelectronics and a myriad of sensor applications.     

Electropolymerization on microelectrodes: functionalization technique for selective protein and DNA conjugation

A critical shortcoming of current surface functionalization schemes is their inability to selectively coat patterned substrates at micrometer and nanometer scales. This limitation prevents localized deposition of macromolecules at high densities, thereby restricting the versatility of the surface. A new approach for functionalizing lithographically patterned substrates that eliminates the need for alignment and, thus, is scalable to any dimension is reported. We show, for the first time, that electropolymerization of derivatized phenols can functionalize patterned surfaces with amine, aldehyde, and carboxylic acid groups and demonstrate that these derivatized groups can covalently bind molecular targets, including proteins and DNA. With this approach, electrically conducting and semiconducting materials in any lithographically realizable geometry can be selectively functionalized, allowing for the sequential deposition of a myriad of chemical or biochemical species of interest at high density to a surface with minimal cross-contamination.     

Vapour phase growth of semiconducting layers

The growth of epitaxial layers of semiconductors by chemical vapour deposition and transport is discussed, and typical practical growth systems are described. The main emphasis is on the open tube flowing gas technique, using halides, hydrides or organometallic compounds. This is the technique most commonly used for epitaxy, having the advantage of allowing comparatively rapid growth of layers of good crystallographic quality over a wide range of thicknesses and doping levels. Examples of the close spacing technique will also be mentioned. Selected applications of these techniques to the growth of Si, II–VI and particularly III–V compounds and alloys are reviewed. Topics covered include preparation of complicated multilayer device structures, impurity incorporation and lattice mismatch effects. Implications for future research are discussed.     

Review Composite and multilayer ferroelectric thin films: processing, properties and applications

This paper reviews recent developments in processing, properties and applications of composite and multilayer ferroelectric thin films. Methods such as physical vapor deposition, chemical vapor deposition and sol-gel, for the processing of composite and multilayer ferroelectric films are described. Among the techniques reviewed for the fabrication of multilayer ferroelectric films, molecular beam epitaxy and atomic layer metal-organic chemical vapor deposition are the most suitable techniques for the deposition of superlattices with atomically sharp interface. As an efficient and quick way, pulsed-laser deposition has been widely used for the preparation of ferroelectric multilayers and heterostructures. Superior dielectric properties have been reported for sol-gel-derived micrometer-thick ceramic/ceramic composite ferroelectric films. Properties of multilayer ferroelectric films vary as a function of periodicity, which can be exploited for the development of various electronic devices. Enhanced characteristics of composite and multilayer films with selected examples from recent literature and the origin of enhancement are discussed and summarized. Finally, applications of the materials for the development of various electronic devices are also presented.     

Use of different sensing materials and deposition techniques for thin-film sensors to increase sensitivity and selectivity

The performances of metal oxide semiconducting materials used as gas-sensing detectors depend strongly on their structural and morphological properties. The average grain size has been proved to play a prominent role and better sensor performances were found in polycrystalline films where the grain size is few tens of nm or smaller. On the other hand, thermal treatments during thin-film deposition and/or sample postprocessing could lead to a grain coalescence, thus decreasing the conductivity of the sensing film. Avoiding such a phenomenon, still keeping optimized processing conditions, will increase the sensor performances, maintaining the resistivity at acceptable values. In this work, new gas-sensing materials and new thin-film deposition procedures have been investigated. Aiming to preserve the sensitivity, to enhance selectivity and to reduce the drift, thin films of WO/sub 3/ and CrTiO/sub 3/ deposited by pulsed-laser ablation (PLA) and of SnO/sub 2/ deposited by rheotaxial growth and thermal oxidation techniques were comparatively characterized. Three issues were mainly addressed: the variation of the conductivity as a function of RH, the sensitivity toward benzene, CO, acetone, and NO/sub 2/, and the selectivity.     

van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene

Semiconductor nanowire arrays integrated vertically on graphene films offer significant advantages for many sophisticated device applications. We report on van der Waals (VDW) epitaxy of InAs nanowires vertically aligned on graphene substrates using metal-organic chemical vapor deposition. The strong correlation between the growth direction of InAs nanowires and surface roughness of graphene substrates was investigated using various graphene films with different numbers of stacked layers. Notably, vertically well-aligned InAs nanowire arrays were obtained easily on single-layer graphene substrates with sufficiently strong VDW attraction. This study presents a considerable advance toward the VDW heteroepitaxy of inorganic nanostructures on chemical vapor-deposited large-area graphenes. More importantly, this work demonstrates the thinnest epitaxial substrate material that yields vertical nanowire arrays by the VDW epitaxy method.     

Engineering of Micro‐ and Nanostructured Surfaces with Anisotropic Geometries and Properties

Widespread approaches to fabricate surfaces with robust micro‐ and nanostructured topographies have been stimulated by opportunities to enhance interface performance by combining physical and chemical effects. In particular, arrays of asymmetric surface features, such as arrays of grooves, inclined pillars, and helical protrusions, have been shown to impart unique anisotropy in properties including wetting, adhesion, thermal and/or electrical conductivity, optical activity, and capability to direct cell growth. These properties are of wide interest for applications including energy conversion, microelectronics, chemical and biological sensing, and bioengineering. However, fabrication of asymmetric surface features often pushes the limits of traditional etching and deposition techniques, making it challenging to produce the desired surfaces in a scalable and cost‐effective manner. We review and classify approaches to fabricate arrays of asymmetric 2D and 3D surface features, in polymers, metals, and ceramics. Analytical and empirical relationships among geometries, materials, and surface properties are discussed, especially in the context of the applications mentioned above. Further, opportunities for new fabrication methods that combine lithography with principles of self‐assembly are identified, aiming to establish design principles for fabrication of arbitrary 3D surface textures over large areas.     

Synthesis and applications of one-dimensional semiconductors

Nanoscale inorganic materials such as quantum dots (0-dimensional) and one-dimensional (1D) structures, such as nanowires, nanobelts and nanotubes, have gained tremendous attention within the last decade. Among the huge variety of 1D nanostructures, semiconducting nanowires have gained particular interest due to their potential applications in optoelectronic and electronic devices. Despite the huge efforts to control and understand the growth mechanisms underlying the formation of these highly anisotropic structures, some fundamental phenomena are still not well understood. For example, high aspect-ratio semiconductors exhibit unexpected growth phenomena, e.g. diameter-dependent and temperature-dependent growth directions, and unusual high doping levels or compositions, which are not known for their macroscopic crystals or thin-film counterparts.This article reviews viable synthetic approaches for growing high aspect-ratio semiconductors from bottom-up techniques, such as crystal structure governed nucleation, metal-promoted vapour phase and solution growth, formation in non-metal seeded gas-phase processes, structure directing templates and electrospinning. In particular new experimental findings and theoretical models relating to the frequently applied vapour-liquid-solid (VLS) growth are highlighted. In addition, the top-down application of controlled chemical etching, using novel masking techniques, is described as a viable approach for generating certain 1D structures. The review highlights the controlled synthesis of semiconducting nanostructures and heterostructures of silicon, germanium, gallium nitride, gallium arsenide, cadmium sulphide, zinc oxide and tin oxide. The alignment of 1D nanostructures will be reviewed briefly. Whilst specific and reliable contact procedures are still a major challenge for the integration of 1D nanostructures as active building blocks, this issue will not be the focus of this paper. However, the promising applications of 1D semiconductors will be highlighted, particularly with reference to surface dependent electronic transduction (gas and biological sensors), energy generation (nanomechanical and photovoltaic) devices, energy storage (lithium storage in battery anodes) as well as nanowire photonics.     

Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films

The properties of SrTiO₃ thin films, grown by liquid injection metal organic chemical vapor deposition on Si/SiO₂, using a mixture of precursors, have been investigated at the nanoscale using an Atomic Force Microscope in the so-called Conductive Atomic Force Microscopy mode. Maps of the leakage currents with a nanometric resolution have been obtained on films elaborated at different temperatures and stoichiometries in order to discriminate the role of each parameter on the onset of leakage currents in the resulting layers. It appears that the higher the deposition temperature, the higher the leakage currents of the films. The mapping with a nanometric precision allows to show a heterogeneous behaviour of the surface with leaky grains and insulating boundaries. The study of films elaborated at the same temperature with different compositions supports the assumption that the leakage currents on Ti-rich layers are far higher than on Sr-rich layers.     

Recent advances in hot-wire CVD R&D at NREL: From 18% silicon heterojunction cells to silicon epitaxy at glass-compatible temperatures

Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back contacts to textured p-type silicon wafers. This is the best reported p-wafer heterojunction solar cell by any technique. We have also dramatically improved the quality of HWCVD silicon epitaxy and recently achieved 11 μm of epitaxial growth at a rate of 110 nm/min.