挤压态Mg–9Al–Zn–0.5RE–Ca–Si合金微观组织和力学性能

目的 改善AZ91镁合金在温度超过120 ℃时的力学性能。方法 在AZ91合金中添加Ca、Si和La/Ce混合稀土元素。在360 ℃下等温挤压,平均挤压速度为1.2 mm/s,挤压比为30︰1,以探究Ca、Si和La/Ce混合稀土元素对AZ91合金力学性能、物相组成和显微组织等的影响。结果 在AZ91挤压态合金中,与添加Si元素相比,Ca元素对挤压态合金的力学性能影响更大。在室温时,Mg–9Al–Zn–0.5RE–Si挤压态合金的屈服强度、极限抗拉强度和伸长率分别是254 MPa、306 MPa、7.0%,而Mg–9Al–Zn–0.5RE–0.5Ca挤压态合金的屈服强度、极限抗拉强度和伸长率分别是308 MPa、330 Ma、7.1%。Mg–9Al–Zn–0.5RE–0.5Ca–0.5Si挤压态合金室温力学性能最佳,其屈服强度、极限抗拉强度和伸长率分别是351 MPa、383 MPa、7.4%,说明Ca、Si这2种元素的协同作用可同时提高室温下AZ91合金的强度和塑性。在150 ℃和200 ℃下,Mg–9Al–Zn–0.5RE– 0.5Ca–0.5Si合金仍然具有最佳的力学性能。在150 ℃下,其屈服强度、极限抗拉强度和伸长率分别为174 MPa、225 MPa、31.8%。在200 ℃下,其屈服强度、极限抗拉强度和伸长率分别为136 MPa、153 MPa、49%。挤压后合金中形成 、 平行于挤压方向的织构。结论 经过360 ℃的热挤压后,由于动态析出、动态再结晶和织构的作用,显著提高了合金的拉伸性能。在室温、150 ℃、200 ℃下,Mg–9Al–Zn–0.5RE–0.5Ca–0.5Si挤压态合金的力学性能最佳,说明同时添加Ca、Si和La/Ce混合稀土元素有利于提高AZ91合金的耐热性。     

冷却速率对Mg-4.4Zn-0.3Zr-0.4Y变形镁合金组织和性能的影响

通过水冷和空冷两种冷却方式制备成分相同的Mg-4.4Zn-0.3Zr-0.4Y(质量分数/%,下同)铸态合金,挤压变形后进行时效处理,研究不同熔体冷却速率对挤压态和时效态合金组织性能的影响。结果表明:通过水冷冷却可以显著细化铸态组织,促进I相(Mg3YZn6)的生成,并抑制W相(Mg3Y2Zn3)的形核;由于初始组织不同,水冷和空冷两种冷却方式铸造的Mg-4.4Zn-0.3Zr-0.4Y合金经过挤压变形后,抗拉强度分别达到327MPa和306MPa,伸长率分别达到14.8%和10.0%;时效处理后,合金的晶粒尺寸和织构强度变化很小,析出的MgZn相和MgZn2相含量成为影响时效态合金性能的主要因素;时效处理挤压态水冷冷却铸造合金的屈服强度和抗拉强度分别达到330MPa和348MPa,伸长率为14.4%,与时效前相比略有减小;时效处理挤压态空冷铸造合金的屈服强度和抗拉强度增大至344MPa和359MPa,伸长率降至8.6%。     

非等温回归再时效对7050铝合金组织与力学性能的影响

采用扫描电镜(SEM)、透射电镜(TEM)、硬度测试和拉伸测试研究了非等温回归再时效对7050合金组织和力学性能的影响。非等温回归处理的加热速率为5℃/min,回归终了温度包括160℃、190℃、220℃、260℃和300℃。结果表明:经120℃/24 h+RT■190℃+120℃/24 h的非等温回归再时效处理后,合金的力学性能最佳,其抗拉强度约为588 MPa,屈服强度约为558 MPa,延伸率约为23%,硬度值约为199HV。预时效态合金晶界平衡相η呈不连续分布,其尺寸约为49～70 nm,晶内析出相η'的平均尺寸约为5～6 nm;在190℃的非等温回归处理过程中,预时效态合金中的析出相发生了部分回溶,相的平均尺寸变小,其晶界相和晶内相的尺寸分别约为5～10 nm和3～6 nm,回归态合金晶界呈多列平行且无沉淀析出带(PFZ)不明显;再时效态合金的晶界相尺寸最大,约为91～108 nm,晶内相弥散,尺寸约为4～10 nm,无沉淀析出带变得明显,其宽度约为41 nm。     

热处理对粉末热挤压法制备6061铝合金强度和塑性的影响

研究了单级固溶及峰值时效处理对粉末热挤压法制备6061铝合金显微组织及室温力学性能的影响,观察了合金挤压态、固溶态及时效处理后的显微组织,并对其力学性能进行了测试.结果表明:挤压态材料的晶粒均匀细小,基体合金中存在大量的第二相颗粒,主要为Mg2Si相;热挤压后的6061铝合金经固溶时效处理(530℃×1 h水冷+170℃×6 h)后,晶粒内部析出大量的β″(Mg5Si6)相,并伴有少量棒状的β’(Mg2Si)相析出,拉伸强度和延伸率分别为311 MPa和10%,相比挤压态铝合金,其拉伸强度提高了近160%.     

铸态和挤压态Mg-4Sm-Al-0.3Mn-xZn合金微观组织和力学性能研究

本工作通过光学显微镜(OM)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、拉伸试验机对铸态和挤压态Mg-4SmAl-0.3Mn-x Zn(x=0、1、2、3)(质量分数)合金的微观组织及力学性能进行了研究。铸态、固溶态合金中观察到了Mg-Al-Sm三元析出相,它是一种长条形基面析出相,具有六方结构,其中a=0.556 nm,c=0.521 nm。该相与镁基体的位向关系为:[0001]_(Mg-Al-Sm)‖[0001]_(α-Mg),■_(Mg-Al-Sm)‖■_(α-Mg)。三种元素的原子比为Mg∶Al∶Sm=98.73∶0.71∶0.56。铸态合金中Mg-4Sm-Al-0.3Mn-3Zn合金具有最佳的拉伸性能,其屈服强度、抗拉强度和延伸率分别为96 MPa、138 MPa和7.2%。挤压态合金中Mg-4Sm-Al-0.3Mn-2Zn合金具有最佳的拉伸性能,其屈服强度、抗拉强度和延伸率分别为269 MPa、298 MPa和16%。     

铸态Mg-4Al-2Si合金的显微组织与力学性能

采用重力铸造法制备Mg-4Al-2Si(AS42)镁合金,研究了铸态合金的显微组织和室温力学性能。结果表明:铸态AS42合金主要由α-Mg基体、β-Mg17Al12相及Mg2Si相组成;β-Mg17Al12相呈网状和棒状分布于晶界上,粗大的汉字状Mg2Si相沿晶界或穿晶分布,多边形块状Mg2Si相随机分布于基体组织中。铸态合金的硬度为64.5 HV,室温抗拉强度为113.5 MPa,屈服强度为86 MPa,伸长率为4.1%;拉伸断裂形式为准解理脆性断裂。     

固溶时间对半固态挤压成形Al-17Si-4Cu-0.5Mg合金组织及力学性能的影响

采用半固态挤压成形工艺制备过共晶Al-17Si-4Cu-0.5Mg合金,研究固溶时间对过共晶Al-17Si-4Cu-0.5Mg合金组织及性能的影响.结果表明,随着固溶时间的增加,Si相出现球化,固溶时间为10 h时,共晶Si的圆整度为0.72.铸态下Si相周围富集较高浓度的Cu元素,固溶1 h后,Cu元素快速固溶到基体中.固溶时间从1 h增加到16 h,在XRD曲线上的θ(Al2 Cu)和Q(Al5 Si6 Cu2 Mg8)相的衍射峰强降低,合金基体中的位错密度大量减少.经180℃,时效处理12 h后,组织中析出针状的θ'相和短棒状的Q'相.随着固溶时间的增加,合金强度值呈现"双峰"现象.固溶1h后,合金的抗拉强度为269 MPa,屈服强度为233 MPa,与未热处理合金相比,抗拉强度和屈服强度分别提高了43.3％和42.7％,合金强度的提高是由于在固溶初期基体中仍有较大的位错密度,时效处理后析出相对位错有较强的钉扎阻碍作用.固溶时间为10 h时,合金的抗拉强度为311 MPa,屈服强度为263 MPa,达到第二个强度峰值,Si相的圆整化和细小析出相的弥散强化作用是形成第二个强度峰的主要原因.     

挤压AM50(-Ca)镁合金的显微组织与力学性能研究

研究了挤压AM50(-Ca)镁合金的微观组织和力学性能.研究发现添加钙在AM50合金中生成新的Al2Ca相,并细化合金的晶粒尺寸.大于2wt.%的钙使铸态AMS0的晶粒尺寸从200 μm减小到40 μm,使挤压态AM50的晶粒尺寸从15 μm减小到7.5 μm.含钙量较少时,晶粒内仍含有少量的Mg17Al12相,Al2Ca相主要分布在晶界;含钙量多于2wt.%时,合金中的Mg17Al12完全消失,除晶界处的Al2Ca相外,在晶粒内部出现大量的针状Al2Ca相.加钙提高了AM50合金的低温抗拉强度,同时在所有试验温度下合金的屈服强度得到提升.     

热处理对Mg97.5 Gd1.9 Zn0.6 合金组织与力学性能的影响EI北大核心CSCD

采用OM,SEM,TEM和电子万能试验机系统地研究了Mg 97.5 Gd 1.9 Zn 0.6合金在铸态、退火态、挤压态和挤压后直接时效(T5)的组织演化和力学性能。结果表明,合金的铸态组织由α-Mg、共晶形貌的(Mg,Zn)3Gd相和层片状的14H-LPSO相组成。在510℃均匀化退火过程中,发生了(Mg,Zn)3Gd转化成块状14H-LPSO的相变。根据生成相的形貌和发生反应的热力学条件得知其为包析转变,即(Mg,Zn)3Gd+α-Mg→14H-LPSO。挤压后直接时效(T5)处理过程中,发生了晶内14H-LPSO相和β′相的沉淀析出。在14H-LPSO强韧化与沉淀强化的共同作用下,合金的屈服强度和抗拉强度分别为216 MPa和361 MPa,伸长率也保持在较好的水平,为6.9%。     

7N01铝合金挤压板的微结构、织构和性能

制备了挤压比λ为36和16的7N01铝合金挤压板材,并分别进行自然时效和人工时效处理。用光学显微镜、扫描电镜、透射电镜、常温拉伸、宏微观织构测试和慢应变拉伸实验对其进行表征,研究了挤压工艺对合金的力学性能和抗腐蚀性能的影响。结果表明,不同挤压比的板材在相同时效状态下的组织和性能有明显的差异。大挤压比板材的内部多为细小的再结晶晶粒,小挤压比板材内部为粗大的亚结构,因此具有比大挤压比板材更高的抗拉强度和屈服强度。透射电镜观察结果表明,大挤压比试样内晶界析出相比小挤压比时呈现更明显的断续分布。此外,挤压比相同的板材人工时效处理后其抗拉强度和延伸率比自然时效板材均有所下降,其中抗拉强度降低约为5.8%,但合金的屈服强度得到了显著提高(约为25%);在挤压比相同的情况下人工时效试样内晶界的析出相呈现断续分布,因此具有更好的抗腐蚀性能。     

Probabilistic strength of {1 1 1} n-type silicon

The two-parameter Weibull strength distribution of {1 1 1} n-type silicon prismatic bars was determined in four-point bending and analyzed as a function of specimen size (width), loading rate, two different crystallographic orientations, and specimen orientation (polished or etched surface in tension). 100% fractography was performed to classify strength-limiting flaw types and to censor the strength data. All flaw types were extrinsic. Machining or cutting damage in the form of chipped edges (an edge-type flaw) was the dominant strength-limiting flaw when the polished surface was subjected to tensile stress, while a flat-bottomed etch pit (a surface-type flaw) was the dominant strength-limiting flaw when the etched surface was subjected to tensile stress. The censored Weibull strength distribution was independent of specimen width, loading rate (indicative of slow crack growth insusceptibility), and the two crystallographic orientations; however, it was dependent on specimen orientation. Pooling of the strength data was employed to tighten the confidence intervals about the censored parameters. The results from this study indicate that different extrinsic strength-limiting flaws and strength distributions will be operative depending on the manner in which a silicon component is stressed.     

Chemical etching of {1 1 1} and {1 0 0} surfaces of InP

The effects of a number of chemical etches on the III–V semiconductor InP were studied, using {1 0 0} and {1 1 1}-type faces. The (1 1 1) and (¯1¯1¯1) faces were found to behave differently, and this was attributed to the polarity of the zinc-blende lattice. Curves showing etching rate as a function of penetration were plotted, and it is noted that they demonstrate an enhanced etching rate close to the surface. This is attributed to the damaged surface layer associated with the cutting of a crystal slice. Photographs were taken at various stages of the etching using both the optical and scanning electron microscopes. Both etch pits and etch hillocks were observed. The shapes of the pits are compared to those described in previously published work, and possible reasons for these shapes are discussed. The conditions necessary for the production of an etch hillock are described and it is shown that the measured etching rates are consistent with hillock formation in the case of the 1 HCl1HNO₃ etch. The mechanisms of dissolution are discussed and it is suggested that both activation control of the dissolution process and diffusion control were observed in the work.     

Diffusion of clusters down (1 1 1) aluminum islands

The key factor determining nucleation processes and faceting in homoepitaxial growth as well as texture competition is the mobility of adatoms and small clusters across step edges and facets. Using a combination of molecular dynamics and ab initio calculations, we investigate the mechanisms of small clusters (dimer and trimer) diffusion down the aluminum (1 1 1) surface. In this paper we report results of molecular dynamics studies. Our study shows that the clusters dissociate at the step-edge of compact islands. As a result, the clusters diffuse down the step by an exchange mechanism with a small or medium Schwoebel barrier. The mechanism of this down-diffusion/dissociation is discussed and the corresponding energetics are calculated using the molecular statics method. We find a large anisotropy between the barriers at the two types of 1 1 0 oriented steps.     

Checking of DIIV-1, DINIR-1, and DINS-1 instruments

Conclusions As follows from what has been said, the amount of specific measurements during the checking of DINIR-1 and DINS-1 instruments is quite large. Taking into account the constant addition to the inventory of these instruments as they are being produced, it is desirable, in the authors' opinion, to consider the problem of developing and subsequently producing a special instrument intended for the checking of various types of time interval meters.Translated from Izmeritel'naya Tekhnika, No. 6, pp. 77–81, June, 1971.     

Transmission electron microscope study of the topotactic reaction of (0 0 1), (0 1 1) and (1 1 1) Ag films and Te

The formation, structure and morphology of silver telluride was investigated in the reaction of (0 0 1), (0 1 1) and (1 1 1) single crystalline Ag films with vacuum deposited Te. Silver films 30–40 nm in thickness were deposited by thermal evaporation onto water- and chlorine-treated NaCl. Onto this silver 1–40 nm of tellurium were deposited at 100 and 200 °C. The Ag–Te reaction occurred during Te deposition. Accordingly, formation of the compound phase was investigated from the nucleation stage through complete tellurization on either side of the polymorphic phase transformation temperature (T_c=150 °C). Transmission electron microscope and selected area electron diffraction showed that monoclinic silver telluride (Ag₂Te) of different morphology and texture was always formed. The orientation of silver and monoclinic phase upon differently oriented monocrystalline Ag films and at deposition temperatures around T_c is discussed.     

Adsorption of the oxygen to the Al (1 1 1) surface

The interaction of the oxygen with the Al (1 1 1) surface is investigated by using the density-functional theory and the pseudopotential technique. We find that the oxygen molecule becomes unstable near the surface, which is induced by the charge transfer from the surface to the molecule. This result suggests that the experimentally observed “hot adatoms” of oxygen is due to the dissociation of the molecule in the area where the direct interaction with the Al atoms is weak.     

Electrical properties of some (1, 1, 1) intermetallic compounds

Many intermetallic compounds form with a gap in their density of states at the Fermi level, giving rise to relatively large Seebeck coefficients, on the order of –150 to –300 V/deg. at room temperature. Consequently, when combined with reasonable carrier mobilities in the range of 30 to 50 cm2/V-s, half-Heusler compounds, such as MNiSn where M = (Ti, Zr, Hf), become attractive candidates for intermediate temperature (300°C to 600°C) thermoelectric applications. Samples of TiNiSn were prepared by arc melting and homogenized by various heat treatments. The temperature dependence of the electrical resistivity, Seebeck coefficient, and thermal diffusivity of these samples was characterized between 22°C and 900°C. The electrical resistivity and thermopower both decrease with increasing temperature, consistent with semiconducting behavior. The electrical power factor, defined as S2/ where S is the Seebeck coefficient and is the resistivity, appears quite sensitive to the degree of homogenization in the microstructure and values in excess of 25 W/cm-°C2 were observed in nearly single phase alloys within the 300 to 600°C temperature range. A brief survey of other selected ternary intermetallic compounds is also presented.     

Fabrication of epitaxial III-nitride cantilevers on silicon (1 1 1) substrates

The molecular beam epitaxy of AlGaN/GaN epilayers on silicon (1 1 1) using an aluminum nitride buffer layer, and subsequent fabrication of free standing III-nitride cantilevers on Si(1 1 1) has been investigated. Transmission electron microscopy (TEM) of cross-section samples reveals a columnar structure consisting of the hexagonal gallium nitride polytype. Selected area diffraction indicates an epitaxial relationship between the gallium nitride and silicon substrate which is described by GaN[0 0 0 1]//Si[1 1 1] and GaN(1 1 0 0)//Si(1 1 1). Imaging of the electronic structure of an AlGaN/GaN interface has been investigated by mapping the variation in the plasmon frequency using an electron energy loss spectrometer on a dedicated scanning transmission electron microscope. Cantilevers were fabricated using a combination of etching processes. Nitride etch rates during inductively coupled plasma dry etch processing using a Cl₂/Ar plasma etchant were obtained by monitoring the optical reflectivity of the nitride films in situ. A peak GaN etch rate of 250 nm/min was measured, the etch rate was found to be strongly dependent on the d.c. self-bias. Thin beams of GaN having a length of 7 μm and 0.7 μm thickness, were fabricated and mechanically released from Si(1 1 1) substrates using a combination of two dry ICP etch processes, using Cl₂/Ar and CF₄/Ar/O₂ chemistries, and a potassium hydroxide (KOH) aqueous wet etch.     

Fabrication of epitaxial III-nitride cantilevers on silicon (1 1 1) substrates

The molecular beam epitaxy of AlGaN/GaN epilayers on silicon (1 1 1) using an aluminum nitride buffer layer, and subsequent fabrication of free standing III-nitride cantilevers on Si(1 1 1) has been investigated. Transmission electron microscopy (TEM) of cross-section samples reveals a columnar structure consisting of the hexagonal gallium nitride polytype. Selected area diffraction indicates an epitaxial relationship between the gallium nitride and silicon substrate which is described by GaN[0 0 0 1]//Si[1 1 1] and GaN(1 1 0 0)//Si(1 1 1). Imaging of the electronic structure of an AlGaN/GaN interface has been investigated by mapping the variation in the plasmon frequency using an electron energy loss spectrometer on a dedicated scanning transmission electron microscope. Cantilevers were fabricated using a combination of etching processes. Nitride etch rates during inductively coupled plasma dry etch processing using a Cl₂/Ar plasma etchant were obtained by monitoring the optical reflectivity of the nitride films in situ. A peak GaN etch rate of 250 nm/min was measured, the etch rate was found to be strongly dependent on the d.c. self-bias. Thin beams of GaN having a length of 7 m and 0.7 m thickness, were fabricated and mechanically released from Si(1 1 1) substrates using a combination of two dry ICP etch processes, using Cl₂/Ar and CF₄/Ar/O₂ chemistries, and a potassium hydroxide (KOH) aqueous wet etch.