GaxIn1 ? xBiyAszSb1 ? y ? z/InSb and InBiyAszSb1 ? y ? z/InSb heterostructures grown in a temperature gradient

Heterophase equilibria in the Ga _x In_{1 − x} Bi _y As _z Sb_{1 − y − z} -InSb and InBi _y As _z Sb_{1 − y − z} -InSb systems have been analyzed within the simple solution approximation. Ga _x In_{1 − x} Bi _y As _z Sb_{1 − y − z} /InSb and InBi _y As _z Sb_{1 − y − z} /InSb heterostructures have been grown in a temperature gradient, and their composition and structural perfection have been assessed.     

Electrical properties and microstructure of CdxHg1 ? x ? yCrySe crystals

Crystals of the Cd _x Hg_{1 − x − y} Cr _y Se (x = 0.4, y = 0.1) quaternary solid solution have been grown by the Bridgman method, and their microstructure and electrical properties have been studied. The crystals are shown to contain various types of inclusions in the form of filaments and triangles.     

Laser induced photoluminescence and morphological characterization of Cd(1?x)?yZnxMnyS nanocrystals

Doped II–VI chalcogenide semiconductor nanostructures have recently attracted a lot of attention due to the possibility of their application in various modern era devices. In the present study, Cd_(1−x)−y Zn _x Mn _y S {(0 ≤ x ≤ 0.5); (0.0001 ≤ y ≤ 0.1)} nanocrystals (NC) have been synthesized by facile wet chemical technique. Morphological and structural analyses of these synthesized quaternary NC have been done using X-ray diffraction (XRD) and transmission electron microscope (TEM) studies. Room temperature photoluminescence (PL) has been investigated using high peak power pulsed N₂-laser. Important optical parameter; excited state lifetime values have been calculated from the recorded multi-exponential decay curves. These fast and efficient nanophosphors have wide applications in opto-electronic industry as futuristic displays, lasers, nanoelectronics and nanosensors.     

Band gap modified Al-doped Zn1?xMgxO and Zn1?yCdyO transparent conducting thin films

Al-doped Zn_1−x Mg _x O and Zn_1−y Cd _y O thin films were prepared on glass substrates by sol–gel method. The codoping thin films showed preferential c-axis orientation, and the lattice constant c evaluated from the shift of the position of (002) peak displayed an increasing evolution from x = 8 at.% to y = 8 at.%, indicating a roughly statistical substitution of Mg²⁺ and Cd²⁺ for Zn²⁺ in their solid solution. The effects of narrowing and widening band gap (E _g) on conductivity of (Cd, Al) and (Mg, Al) codoped ZnO thin films were simultaneously investigated using transmission spectra and electrical measurements. The transmittances of these films are obviously decreased by vacuum annealing to 50–60%. However, the carrier concentration and Hall mobility both increase, and resistivity decreases with narrowing band gap in 1 at.% Al-doped Zn_1−x Mg _x O and Zn_1−y Cd _y O thin films from x = 8 at.% to y = 8 at.%. It is revealed that the conductivity of Al-doped ZnO thin films could be enhanced by this simple band gap modification.     

Ferromagnetic Resonance in Ga1?xMnxAs

We report on ferromagnetic resonance measurements of Ga_1–x Mn _x As thin films with Mn contents 0.022 x 0.051. For x 0.036 and the external magnetic field normal to the thin film, we observe several resonances, which we identify as spin wave resonances. The non-quadratic mode spacing can be consistently explained by a linear gradient in the magnetic properties of the films. From the measurements, the exchange constant A can be deduced for different Mn contents x.     

Molecular beam epitaxy of Pb1 ? xEuxTe and Pb1 ? xSnxTe layers and related periodic structures

Layers and periodic Bragg structures based on Pb_{1 − x} Eu _x Te (0 < x < 1) and Pb_{1 − x} Sn _x Te (0 < x < 0.1) ternary solid solutions have been grown on (111) BaF₂ and (111) Si substrates by molecular beam epitaxy. X-ray diffraction measurements show that the layers in three-period EuTe/Pb_0.94Eu_0.06Te structures maintain the [111] crystallographic orientation normal to the substrate plane. In the interface plane, the [110] directions of the layers and substrate are parallel to each other. The full width at half maximum of the rocking curve of each layer of both the binary and ternary compounds is about 20′. The large optical contrast (40%) in such structures allowed us to reach 99.9% mid-IR reflectivity.     

Magnetic Phase Diagram of Ca1?xMnxO

Alternating current susceptibility and direct current magnetization have been studied for polycrystalline Ca_1–x Mn _x O. On increasing the Mn content, magnetic ordering changes from spin glass behavior for 0.25 x 0.4 to antiferromagnetic order. The paramagnetic/antiferromagnetic transition is of second order for 0.5 x 0.65 and of first order for x 0.7. For low Mn concentrations, the high-temperature alternating current susceptibility can be described by a diluted Heisenberg magnet model developed for diluted magnetic semiconductors.     

Microscopic Scenario for x = 1/8 Anomaly in La2 ? xSrxCuO4

We adopt a t ₁-t ₂-t ₃-J-G model for explanation of x = 1/8 anomaly in La_{2 – x} Sr _x CuO₄ family compound. The calculated charge susceptibility shows a maximum near Q = (, ) at intermediate temperatures and near (, /2) as temperature approaches zero, in agreement with neutron scattering experiments. Coulomb repulsion G between the first neighbors turns out to be the source of Charge Density Waves (CDW) in narrow band t ^eff ₁, t ^eff ₂, t ^eff ₃ < G. For physically realistic hopping values we obtain the CDW amplitude e _Q = x. The in-phase domain structure as a candidate for stripe picture is proposed.     

Production and dielectric properties of lead-free ceramics with the formula [(Na0.5K0.5)1 ? xLix](Nb1 ? y ? zTaySbz)O3

The influence of past history on the possibility of obtaining high-density ferroelectric ceramics of solid solutions [(Na_0.5K_0.5)_{1 − x} Li _x ](Nb_{1 − y − z} Ta _y Sb _z )O at x = 0–0.14, y = 0, 0.1, 0.2, and z = 0–0.1 is identified. The dynamics of behavior of materials under a field in the process of polarization is evaluated. The relative dielectric permeability of samples in a wide range of temperatures (20–700°C) and frequencies (25 Hz-1 MHz) of a variable electric field is studied. On the basis of study of dielectric, piezoelectric, and elastic properties of solid solutions, prospective objects for further technological elaboration and modification of chemical composition with the goal of improving the electrophysical parameters are selected. Original Russian Text ? I.A. Verbenko, O.N. Razumovskaya, L.A. Shilkina, L.A. Reznichenko, K.P. Andryushin, 2009, published in Neorganicheskie Materialy, 2009, Vol. 45, No. 6, pp. 762–768.     

Structure of Sr1 ? xPbxFeO3 ? δ (0 < x < 0.5) perovskite-like materials

We have synthesized Sr_{1 − x} Pb _x FeO_{3 − δ} (x = 0, 0.05, 0.1, 0.15, 0.2, 0.3, 0.5) perovskite-like materials and studied their structure by X-ray diffraction, M?ssbauer spectroscopy, and electron microscopy. According to the X-ray diffraction data, the Pb solubility limit in the perovskite structure is x ≈ 0.15. The materials with x = 0.05 and 0.1 contained Pb_1.33Sr_0.67Fe₂O₅ inclusions 10–30 nm in size. Using chronopotentiometry and temperature-programmed desorption, we have estimated oxygen mobility in the materials with x = 0.05 and 0.1. The results demonstrate that Pb doping increases oxygen mobility in the strontium-ferrite-based materials.     

Electronic Properties and Superconductivity of Electron-Doped La1?x/2Pr1?x/2CexCuO4

La_1−x/2Pr_1−x/2Ce _x CuO _y (LPCCO) samples with doping level up to 20% have been synthesized and their electronic and superconductive properties are studied. X-ray diffraction revealed that the LPCCO system is a pure phase system with a T’214 structure. Magnetic and resistive measurements show that the system is superconducting at 0.08≤x<0.20 with T _cmax=25 K at x=0.12. An anti-ferromagnetism transition was also observed in under-doped PLCCO (x=0.05) with the window width of the anti-ferromagnetism phase being significantly narrower than that NCCO and PCCO systems. The behavior of the Ce doping is compared with Sr doping in this system, and the mechanism is discussed.     

Relation of Structure and Superconductivity in Self-compensated Y1?xCaxBa2Cu3?xAlxOz System

The co-doped compounds of Y_1−x Ca _x Ba₂Cu_3−x Al _x O _z , with x from 0.1 to 0.4, were synthesized through a solid-state reaction method. Structural and superconducting properties have been investigated by X-ray diffraction, Rietveld refinement, and DC magnetization measurement. The lattice constant a decreases while b increases with the addition of x. The difference between a and b diminishes gradually. Careful study of the crystalline structure shows that the critical temperature (T _c ) changes monotonically with some local structural parameters, such as the difference between Ba and Cu(2) atoms’ Z coordinates, the bond length of Cu(2)–O(4), and the bond angle of Cu(2)–O(2)–Cu(2), which are all closely related to the interaction between the perovskite block and the rock salt block in the unit cell. The results indicated that the influence of the crystalline structure on superconductivity is important and independent of the carrier concentration.     

LiNi1 ? x ? yCoxMnyO2 (x = y = 0.1, 0.2, 0.33) cathode materials prepared using mechanical activation: Structure, state of ions, and electrochemical performance

We have investigated LiNi_{1 − x − y} Co _x Mn _y O₂ (x = y = 0.1, 0.2, 0.33) cathode materials synthesized from mechanically activated mixtures of lithium hydroxide and nickel cobalt manganese hydroxide. The materials have a layered structure (sp. gr. ). Their unit-cell volume and the degree of disordering in their structure decrease with decreasing nickel content. According to x-ray photoelectron spectroscopy data, the major states of the transition-metal ions in the surface layer of the materials are Ni²⁺, Co³⁺, and Mn⁴⁺. With increasing nickel content, the Ni 2p _3/2 and Co 2p _3/2 binding energies increase, attesting to changes in M-O bond covalence. The highest specific electrochemical capacity, ∼170 mA h/g, is offered by LiNi_0.6Co_0.2Mn_0.2O₂. The position of redox peaks in the differential capacity curves of the three materials depends on composition: with increasing nickel content, the peaks shift to lower voltages. Original Russian Text ? N.V. Kosova, E.T. Devyatkina, V.V. Kaichev, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 2, pp. 227–235.     

Thermodynamic evaluation and potentiometric study of Cd1?xMnxTe and Cd1?xZnxTe dissolution in acid and alkaline solutions

We have performed thermodynamic calculations and have constructed Pourbaix diagrams representing redox processes in the MnTe-H₂O, ZnTe-H₂O, Cd_1−x Mn _x Te-H₂O, and Cd_1−x Zn _x Te-H₂O systems. Analysis of the Pourbaix diagrams and potentiometric data attests to different etching behaviors of Cd_1−x Mn _x Te and Cd_1−x Zn _x Te solid solutions in alkaline and acid solutions. Original Russian Text ? S.G. Dremlyuzhenko, A.G. Voloshchuk, Z.I. Zakharuk, I.N. Yurijchuk, 2008, published in Neorganicheskie Materialy, 2008, Vol. 44, No. 1, pp. 26–34.     

Electrical conductivity of LaCoxFe1 ? xO3 ? δ and LaLi0.1CoxFe0.9 ? xO3 ? δ (0 ≤ x ≤ 0.4) oxides

We have studied the effect of Co and Li concentrations on the phase composition and electrical conductivity of LaCo _x Fe_{1 − x} O_{3 − δ} and LaLi_0.1Co _x Fe_{0.9 − x} O_{3 − δ} perovskite-like oxides synthesized in air at 1470 K. Single-phase materials with an orthorhombic crystal structure were obtained in the range 0 ≤ x ≤ 0.3. The composition dependences of conductivity have a minimum at x _c = 0.1 and 0.2, respectively. In the range x > 0.1, the conductivity of LaCo _x Fe_{1 − x} O_{3 − δ} increases with increasing Co concentration for T > 700 K and decreases for T < 600 K. The conductivity of La(Li_0.1Co _x Fe_{0.9 − x} )O_{3 − δ} in the range 0 ≤ x ≤ 0.1 and for x ≥ 0.2 increases with Co concentration throughout the temperature range studied.     

Superconducting Properties of Carbon and Zn Double-doped Mg1?xZnx(B1?xCx)2

A series of polycrystalline samples of Mg_1−x Zn _x (B_1−x C _x )₂ (x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) were synthesized by a conventional solid-state reaction method under a background pressure about 10⁻³ Pa. Phase identification, crystal structure and superconducting transition temperature (T _c) were studied by means of X-ray diffraction (XRD) and resistivity measurements. The results indicated that the lattice parameters a and c show no clear trend in their changes with increasing doping level, and it turned out that the dopants had a marked effect on the crystal-lattice parameters and changed the crystal structure of the samples. The T _c for Mg_1−x Zn _x (B_1−x C _x )₂ decreased with C and Zn doping, but the rate of decrease was slower than single C-doped. We propose that the suppression of T _c by doping originates largely from the structural change.     

Electrical Characterization of p-Type Pb1?xEuxTe

The transport properties of p-type Pb_1–x Eu _x Te epitaxial layers were studied as a function of Eu content, temperature, and magnetic field. The low-temperature hole mobility is drastically reduced when the Eu concentration is increased from 0 to 6%, while the hole concentration remains almost constant. A metal-insulator transition was observed for x 0.04, which is probably induced by the disorder caused by the introduction of Eu. For temperatures down to 10 K, only positive magnetoresistance has been observed at low magnetic fields. An anomalous behavior of the resistivity as a function of temperature has been detected for a Eu content about 5%, which is attributed to the resonance between the localized Eu 4f level and the valence band maximum.     

Thermal conductivity of Ca1 ? xHoxF2 + x optical ceramics

The thermal conductivity of Ca_{1 − x} Ho _x F_{2 + x} (x ≤ 0.03) optical ceramics has been studied experimentally in the temperature range 50–300 K. With increasing holmium content, the thermal conductivity of the ceramics decreases, especially at low temperatures: from 10.2 to 2.3 W/(m K) at 300 K and from 250 to 4.5 W/(m K) at 50 K.     

Determining the normal and lateral dark current components in n-p photodiodes based on p-CdxHg1 ? xTe heteroepitaxial structures with x = 0.22

The effect of an external magnetic field on the dark current of photodiodes in far-IR matrix photodetector arrays fabricated by boron ion implantation into heteroepitaxial cadmium mercury telluride (CMT) layers has been studied. A new method is proposed for separately determining the lateral and normal dark current components in CMT photodiodes of the matrix photodetectors. It is established that the dark current of these photodiodes (at 77 K) with dimensions comparable with the minority carrier diffusion length is determined primarily by the lateral component.