Ti_(3)AlN/ZrYN纳米多层膜力学性能、抗氧化及疏水性能EICSCD

利用物理气相沉积(PVD)技术交替沉积Ti_(3)AlN和ZrYN纳米层,制备一系列具有不同ZrYN纳米层厚度(l)的Ti_(3)AlN/ZrYN纳米多层膜,并通过XRD,SEM,纳米压痕仪,显微硬度计及接触角测量仪等研究不同l对Ti_(3)AlN/ZrYN纳米多层膜力学、抗氧化以及疏水性能的影响。结果表明:当Ti_(3)AlN和ZrYN纳米层厚度分别为10 nm和1 nm时,纳米多层膜具有高硬度(H=26.8 GPa)和优异的断裂韧度(Kf=4.21 MPa∙m^(1/2))。硬度和断裂韧度的提高可能是因为,当l较小时,纳米层间形成良好的c-Ti_(3)AlN/c-ZrYN共格外延结构,可以有效阻碍位错的产生和滑移。高密度的异质界面可使微裂纹发生连续偏转,有效延长裂纹扩散路径的同时消耗裂纹传播能量,从而提高断裂韧度。同时,较小的l也易于获得优异的抗氧化性能,l较小时Ti_(3)AlN纳米层占主导地位,Al倾向于在表面形成致密的Al_(2)O_(3)层,阻碍氧气向薄膜内部扩散。此外,Ti_(3)AlN/ZrYN纳米多层膜表面形成的结瘤缺陷增加表面粗糙度,使得薄膜的疏水性能得到提高,从而使其在潮湿环境中不易快速发生腐蚀。     

TiN/AlN纳米多层膜的制备及耐蚀性能

采用多弧离子镀技术制备了TiN/AlN纳米多层膜,并通过多层膜在酸中的浸泡试验及极化曲线测定,对比研究了TiN/AlN纳米多层膜和TiN薄膜的耐蚀性能.结果表明,由于TiN/AlN纳米多层膜中铝的钝化作用及薄膜的特殊层结构,TiN/AlN纳米多层膜比TiN薄膜具有更优良的耐腐蚀性能.     

直流磁控溅射制备(Ti,Al)N薄膜研究

本研究采用直流磁控溅射的方法在W 18Cr4V高速钢基体上制备不同Al/Ti比例的(Ti,Al)N薄膜,为此,在圆柱形磁控溅射Ti靶表面上,采用多弧离子镀技术覆盖不同面积和一定厚度的纯Al,结果表明:只有在靶材的外表面Ti与Al的交界附近的样品才能沉积成薄膜,随着靶材表面覆盖纯A l的面积增大,所形成的结晶薄膜中的Al/Ti比例增大,膜层中的相组成AlN的数量增多,而TiAlN的数量减少,此外纯Al的覆盖面积过大,将导致溅射时所需要的气压过高而无法沉积成膜。     

Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响

采用金属有机物化学气相沉积法(MOCVD)在硅(Si)衬底制备铝/氮化铝/氮化镓(Al/AlN/GaN)多层薄膜,使用光学显微镜(OM)、原子力显微镜(AFM)、X射线衍射(XRD)等手段表征AlN和GaN薄膜的微观结构和晶体质量,研究了TMAl流量对AlN薄膜和GaN薄膜的形核和生长机制的影响。结果表明,预沉积Al层能促进AlN的形核和生长,进而提高GaN外延层的薄膜质量。TMAl流量太低则预沉积Al层不充分,AlN缓冲层的质量取决于由形核长大的高结晶度AlN薄膜与在气氛中团聚长大并沉积的低结晶度AlN薄膜之间的竞争,AlN薄膜的质量随着TMAl流量的升高而提高,GaN薄膜的质量也随之提高。TMAl流量太高则预沉积Al层过厚,AlN缓冲层的质量取决于由形核长大的高结晶度AlN薄膜与Al-Si回融蚀刻之间的竞争,AlN薄膜的质量随着TMAl流量的升高而降低,GaN薄膜的质量也随之降低。     

取向对PLD法制备BiFeO3薄膜性能的影响

以快速等离子烧结法(SPS)制备的BiFeO3块体为靶材,用激光脉冲沉积(PLD)法在不同衬底上制备了BiFeO3(100)/LaNiO3(100)/Si(100)、BiFeO3(111)/LaNiO3(111)/SrTiO3(111)、BiFeO3(110)/Pt/TiO2/SiO2/Si、BiFeO3(110)LaNiO3(110)/Pt/TiO2/SiO2/Si不同择优取向的薄膜,并对薄膜进行了XRD和SEM分析。X射线衍射结果表明,BiFeO3薄膜外延沉积在导电层衬底上,并且它们具有相同的高度取向。SEM分析表明,薄膜上的晶粒是柱状形态,表面光滑致密且颗粒分布非常均匀,晶粒的边界和尺寸也能被清晰地观察到。通过铁电铁磁性能研究,BiFeO3(111)择优取向性能最佳。SrTiO3衬底上(111)取向的BiFeO3薄膜铁电剩余极化值达到了30.3μC/cm2,漏电流为1.0×10-3 A/cm2,饱和磁化强度为20.0kA/m。     

多层金刚石薄膜的制备研究

利用微波等离子体化学气相沉积法,以H_2/CH_4/CO_2为混合气源,在Si基底上分别沉积了单层微米、纳米以及三层(膜层结构为微米层(MCD)/纳米层(NCD)/微米层(MCD))金刚石薄膜。利用Raman光谱、扫描电子显微镜(SEM)和X射线衍射(XRD)表征金刚石膜,以得到样品质量、表面形貌、晶粒尺寸等信息。结果表明:微米金刚石晶薄膜粒粗大,表面粗糙,纳米金刚石薄膜晶粒细小,表面平整,生长过程中控制反应参数,可以制备出多层金刚石膜,三层结构的引入,可以明显降低表面粗糙度。     

基于SVR的脉冲激光沉积TiN/AlN多层薄膜的工艺优化

根据脉冲激光沉积(PLD)法在单晶Si试样表面沉积制备多层TiN/AlN硬质膜实验数据,应用基于粒子群算法(PSO)寻优的支持向量回归(SVR)方法,建立不同工艺参数下沉积的TiN/AlN多层膜的AlN膜厚及TiN薄膜硬度的SVR预测模型。在相同的训练与测试样本集下,将SVR所得的AlN膜厚预测值与免疫径向基函数(IRBF)神经网络的计算结果进行比较。结果表明,SVR模型训练和预测结果的平均绝对百分误差要比IRBFNN模型的小,其预测精度更高,预测效果更好。应用SVR的TiN薄膜硬度模型对PLD法沉积TiN薄膜的工艺参数进行了优化,分析了多因素对PLD法沉积TiN薄膜硬度的交互作用和影响。该方法可为人们利用PLD法沉积TiN/AlN多层功能薄膜提供科学的理论指导,具有重要的理论意义和实用价值。     

离子束溅射沉积Fe/Si多层膜法合成β-FeSi_2薄膜的研究

采用离子束溅射沉积Fe/Si多层膜的方法在石英衬底上制备了β-FeSi2薄膜,研究了不同厚度比的Fe/Si多层膜对β-FeSi2薄膜的结构性能、形貌及光学性能的影响。结果表明,厚度比为Fe(2nm)/Si(7.4nm)的多层膜在退火后完全生成了β-FeSi2相,表面致密均匀,其光学带隙为0.84eV,能量为1.0eV光子的吸收系数105cm-1。     

射频磁控反应溅射制备ZnO/AlN双层膜的结构和性能

采用射频磁控反应溅射在Si（100）衬底上制备了ZnO/AlN双层膜。使用X射线衍射仪、原子力显微镜（AFM）、LCR测试仪及荧光分光光度计等仪器对样品进行了结构、表面形貌、导电性及荧光光谱的测试,并与相同工艺下制备的ZnO单层薄膜进行了对比研究。结果表明,ZnO/AlN双层膜的c轴择优取向性优于单层ZnO薄膜,薄膜应力更小,且为压应力,晶粒尺寸大于单层膜,表面粗糙度较小,并且其电阻率更低。荧光光谱显示,ZnO/AlN双层膜的结晶质量更好。     

真空室压力对低压等离子喷涂成形钨靶材显微组织及性能的影响

采用低压等离子喷涂成形技术制备片状及回转体钨靶材,分析真空室压力对钨靶材致密度、氧质量分数、微观结构、显微硬度及抗拉强度等性能的影响,并对片状钨靶材的磁控溅射镀膜进行研究。结果表明:随着真空室压力由1.3×104Pa增大至3.9×104Pa,钨粉充分熔化铺展,未熔W颗粒减少,钨靶材氧含量稍有提高,致密度,显微硬度和抗拉强度分别增大至97.2%,377.8HV0.025及201.1MPa。然而,当真空室压力进一步增大至6.5×104Pa后,钨靶材层片结合界面形成絮状的W3O夹杂层,氧含量增大至0.71%,其各项性能反而有所降低。低压等离子喷涂成形片状钨靶材(3.9×104Pa真空室压力)可磁控溅射沉积出平整、致密、连续的钨薄膜,镀膜厚度约为300nm。XRD结果表明,钨薄膜为体心立方结构,沿(110)方向择优生长。磁控溅射离子的均匀轰击导致钨靶材表面快速溅射及均匀减薄,溅射表面及截面较为平整、光滑,溅射凹坑接近纳米级。     

溅射功率对ZnO：Si透明导电薄膜性能的影响

采用直流磁控溅射法在室温玻璃基片上制备出了掺硅氧化锌（ZnO：Si）透明导电薄膜,研究了溅射功率对ZnO：Si薄膜结构、形貌、光学及电学性能的影响,实验结果表明,溅射功率对ZnO：Si薄膜的生长速率、结晶质量及电学性能有很大影响,而对其光学性能影响不大。实验制备的ZnO：LSi薄膜为六方纤锌矿结构的多晶薄膜,且具有垂直于基片方向的c轴择优取向。当溅射功率从45W增加到105W时,薄膜的晶化程度提高、晶粒尺寸增大,薄膜的电阻率减小;当溅射功率为105W时,薄膜的电阻率达到最小值3．83~104n·cm,其可见光透过率为94．41％。实验制备的ZnO：Si薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。     

直流磁控溅射功率对溅射生长GZO薄膜光电性能的影响

本文采用直流磁控溅射沉积系统在玻璃基底上沉积镓掺杂氧化锌(GZO)薄膜,将溅射功率从120W调整到240W,步长为30W,研究功率变化对GZO薄膜的晶体结构、表面形貌、光学性能和电学性能的影响。结果表明,溅射功率对GZO薄膜电阻率有显著的影响。溅射功率为210W时薄膜呈现最低电阻率为3.31×10~(-4)Ω·cm,可见光波段平均光学透光率接近84%。随着溅射功率的增加,薄膜表面形貌和生长形态发生较大变化,并直接得到具有一定凸凹不平的微结构,GZO薄膜的致密性先增加后降低。     

直流磁控溅射制备铝薄膜的工艺研究

采用直流磁控溅射方法，以高纯Al为靶材，高纯Ar为溅射气体，在玻璃衬底上成功地制备了铝薄膜，并对铝膜的沉积速率、结构和表面形貌进行了研究。结果表明：A1膜的沉积速率随着溅射功率的增大先几乎呈线性增大而后缓慢增大；随着溅射气压的增加，沉积速率先增大，在一定气压时达到峰值后继续随气压的增大而减小。X射线衍射图谱表明Al膜结构为多晶态；用扫描电子显微镜对薄膜进行表面形貌的观察，溅射功率为2600W，溅射气压为0．4Pa时制备的Al膜较均匀致密。     

射频磁控溅射法制备碲化铅薄膜的X射线衍射分析

采用射频磁控溅射法,在单面抛光的Si(111)衬底上制备了PbTe薄膜,利用X射线衍射法分析了溅射工艺参数如溅射功率、溅射时间、衬底温度以及退火温度对PbTe薄膜的结晶质量的影响。结果表明:在溅射功率为30W,溅射时间为10 min,衬底未加热时制备的薄膜具有最好的〈100〉方向的择优取向性;退火处理可以改善薄膜的结晶质量,并且退火温度越高,薄膜的结晶质量越好。     

磁控溅射工艺参数对Pb(Zr,Ti)O3薄膜织构的影响

利用RF磁控溅射法制备了Pb(Zr,Ti)O3(PZT)铁电薄膜,利用X射线衍射(XRD)法研究了薄膜的相组成及溅射工艺参数对薄膜织构的影响.结果表明,在小靶基距时,过高溅射功率不利于获得纯钙钛矿相的PZT铁电薄膜.溅射功率及溅射气压影响PZT薄膜的织构及其织构散漫度,提高溅射气压及溅射功率,(111)织构漫散度随之提高.在靶基距为80mm时,选择150w、0.7Pa的溅射工艺可获得具有最佳(100)织构的PZT薄膜.     

溅射工艺对GdTbFeCo薄膜磁光性能的影响

采用射频磁控溅射法在玻璃基片上成功制得了GdTbFeCo非晶垂直磁化膜,研究了溅射工艺对GdTbFeCo薄膜磁光性能的影响.测量结果表明,基片与靶间距为72mm,溅射功率为75W,溅射气压为0.5Pa,薄膜厚度为120nm时,GdTbFeCo薄膜垂直方向矫顽力为477.6kA/m,克尔角为0.413°.     

Characterization of crystalline structure and morphology of NiO thin films

We investigated the relation of sputtering powers with structural and morphological properties of nickel oxide (NiO) thin films. NiO thin films were fabricated by using an rf-reactive sputtering method on Si(100) substrates with a Ni target in a partial pressure of oxygen and argon. The films were deposited by various rf-sputtering powers from 100 to 200 W at room temperature. The phases and crystalline structures of the deposited films were investigated by using grazing incident X-ray diffraction (XRD). The thickness and surface morphology of the films were investigated by using a field emission-scanning electron microscopy (FE-SEM). The different sputtering conditions drastically affected the crystallinity and the surface morphology of NiO thin films. A combined analysis of the data obtained from X-ray diffraction and SEM images demonstrates that the preferred orientation of NiO films tends to grow from (111) to (200) direction as increasing the sputtering power, which can be explained by in terms of the surface energy along the indexing plane in an fcc structure. As increasing the rf power, lattice constants decreased from 4.26 to 4.20 angstroms and samples became high-quality crystals. Under our experimental condition, NiO films prepared at 150 W with 20% partial pressure of oxygen and 7 cm distance from the sample to the target show the best quality of the crystal.     

Dependence of the MgO sputtering power on the characteristics of MgZnO thin films grown by radio-frequency magnetron sputtering

The dependence of the MgO sputtering power on the structural and optical properties of epitaxially grown MgZnO thin films on GaN/sapphire substrates by radio-frequency magnetron sputtering was investigated. The photoluminescence investigation showed blue shift of 170 meV in MgZnO film grown at the MgO power of 300 W, compared with the ZnO films grown at the MgO power of 0 W, which was attributed to the enhancement of the Mg incorporation at higher power. In addition, increase in Mg mole fraction with increase in sputtering power of MgO was observed from the PL results, and a maximum of 6.6 at.% Mg was obtained at the MgO power of 300 W. The high-resolution X-ray diffraction and transmission electron microscopy (TEM) investigations revealed that the threading dislocation density in the MgZnO thin films increased with increase in sputtering power. Furthermore, microstructural analysis performed by TEM revealed formation of a thin cubic-like phase in the interface between GaN template and MgZnO thin film, together with increased thickness of the interfacial layer with sputtering power.     

Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power

In this study, transparent conductive Al doped zinc oxide (ZnO: Al, AZO) thin films with a thickness of 40 nm were prepared on the Corning glass substrate by radio frequency magnetron sputtering. The properties of the AZO thin films are investigated at different substrate temperatures (from 27 to 150 °C) and sputtering power (from 150 to 250 W). The structural, optical and electrical properties of the AZO thin films were investigated. The optical transmittance of about 78 % (at 415 nm)–92.5 % (at 630 nm) in the visible range and the electrical resistivity of 7 × 10^?4 Ω-cm (175.2 Ω/sq) were obtained at sputtering power of 250 W and substrate temperature of 70 °C. The observed property of the AZO thin films is suitable for transparent conductive electrode applications.     

The effect of deposition parameters and post treatment on the electrical properties of Mo thin films

In this study, we deposited low-resistivity molybdenum (Mo) thin films on soda-lime glass substrates with good adhesion. We adjusted various deposition parameters such as the sputtering power (52-102 W), working distance (5.5-9 cm) and annealing temperature (26-400 °C) to investigate their impact on the sheet resistance. By using a DC magnetron sputtering system, we obtained Mo thin films having the lowest sheet resistance of 0.190 Ω/□ with a sputtering power of 82 W, working distance of 6.5 cm, and annealing temperature of 400 °C; in addition, these films had good adhesivity. These Mo thin films were suitable for use as the Mo back contact in Cu(In,Ga)Se₂-based solar cells.