ZnO薄膜的晶体性能的分析

在硅基上制备出了c轴取向高度一致的ZnO薄膜 ,这将有可能成为新型GaN单晶薄膜的过渡层。对ZnO薄膜的晶体性能进行了分析 ,研究不同衬底和不同衬底温度对ZnO薄膜的结晶状况的影响 ,并着重用TEM研究了硅基ZnO薄膜的晶体性能。     

掺杂ZnO薄膜的研究现状

ZnO薄膜的性质取决于不同的掺杂元素和不同的制备工艺.概述了掺杂ZnO薄膜的研究现状,分析了不同掺杂组分对ZnO薄膜的p型转变特性、发光特性以及铁磁性质的影响,认为稀土掺杂可能使ZnO薄膜产生新的发光特性,共掺杂技术可能是实现ZnO薄膜特性改变的新途径.     

热氧化ZnS∶Ga制备ZnO∶Ga薄膜及其光致发光性能

利用化学浴沉积法制备了不同Ga掺杂量的ZnS(ZnS∶Ga)薄膜,并采用热氧化法生长了Ga掺杂ZnO(ZnO∶Ga)薄膜,研究了ZnO∶Ga薄膜的表面形貌、成分及光致发光性能。结果表明:Ga的掺入改变了ZnO薄膜的微观结构、化学计量比、氧空位的相对含量,进而影响了薄膜的光致发光性能。随着Ga掺杂量增加,ZnO薄膜的致密度提高,颗粒尺寸减小;同时改善了ZnO的化学计量比,氧空位相对含量随之减少;ZnO薄膜的紫外光与可见光强度比增大。     

稀土掺杂 ZnO 薄膜的研究进展

综述了近年来国内外稀土掺杂ZnO薄膜的研究现状,总结了稀土掺杂的方式及稀土掺杂对ZnO薄膜的结构、光、电、磁学性能以及抗腐蚀性能的影响,并介绍了稀土掺杂ZnO薄膜在气敏传感器方面的应用,最后探讨了稀土掺杂ZnO薄膜存在的问题及今后可能的研究方向.     

ZnO薄膜的p型掺杂研究进展

ZnO作为重要的第三代半导体材料在光电领域具有广泛的应用前景因而引起越来越多的关注,ZnO薄膜的p型掺杂是实现ZnO基光电器件的关键,也是ZnO材料的主要研究课题.本文论述了ZnO薄膜P型转变的难点及其解决方法,概述了ZnO薄膜p型掺杂的研究现状,提出了有待进一步研究的问题.     

耐高温柔性Mica/ZnO薄膜的制备与表征

以氟晶云母片为衬底，进行柔性ZnO透明导电薄膜(Mica/ZnO)的制备与表征。利用XRD和SEM表征可知，晶种水热法比直接水热法更有利于制备Mica/ZnO薄膜。研究发现，晶种水热法制备Mica/ZnO薄膜分为颗粒状ZnO晶体生长阶段、颗粒状ZnO晶体成长为棒状ZnO晶体阶段和棒状ZnO晶体成长三个阶段。采用晶种水热法制备Mica/ZnO薄膜适宜的晶化时间为26h,制备的致密棒状ZnO晶体长度约500nm左右。制备的Mica/ZnO薄膜可耐500℃以上的高温，为研究耐高温柔性ZnO透明导电薄膜提供更为丰富的柔性衬底材料和制备方法。     

氧化锌薄膜研究的新进展

ZnO薄膜是一种具有优良的压电、光电、气敏、压敏等性质的材料.ZnO薄膜的制备方法多样,薄膜的性质取决于不同的掺杂组分,并与制备工艺紧密相关.简述了ZnO薄膜的制备方法与基本性质与应用,分析了ZnO薄膜研究、应用与开发现状,展望了产业化发展前景.     

ZnO薄膜的同质外延生长及其结构表征

利用等离子体辅助分子束外延的方法在ZnO单晶衬底上制备了ZnO薄膜。利用X射线衍射(XRD)、同步辐射掠入射XRD和φ扫描等实验技术研究了ZnO薄膜的结构。XRD和φ扫描的结果显示同质外延的ZnO薄膜已经达到单晶水平。掠入射XRD结果表明ZnO薄膜内部不同深度处a方向的晶格弛豫是不一致的,从接近衬底界面处到薄膜的中间部分再到薄膜的表面处,a方向的晶格常数分别为0.3249,0.3258和0.3242 nm。计算得到ZnO薄膜的泊松比为0.156,同质外延的ZnO薄膜与衬底在a轴方向的晶格失配度为-0.123%。     

p型掺杂ZnO薄膜的研究进展

近年来,随着对ZnO的光电性质及其在光电领域应用的开发研究,制备可靠稳定的低阻p型ZnO薄膜成为研究热点之一。本文论述了p型ZnO薄膜制备的难点及其解决方法,综述了其最新研究进展,并对p型ZnO的研究进行了展望。     

掺Nd纳米ZnO薄膜特性研究

研究了用真空蒸发法在玻璃衬底上制备稀土掺杂纳米ZnO薄膜结构、导电性及光透射性能。结果显示 ,在 5 0 0℃氧化、热处理稀土元素Nd掺杂后能够明显改善纳米ZnO薄膜的结构特性 ,薄膜的晶粒尺寸随掺杂含量的增加而减小。掺Nd使ZnO薄膜的电性能有所改善但使纳米ZnO薄膜的光透射性有所降低。     

PbS量子点/ZnO纳米片复合膜的制备及其光电化学性能

通过两步法合成PbS量子点(QDs)修饰ZnO纳米片复合膜. 首先利用电化学法在掺氟的SnO₂导电玻璃(FTO)上生长ZnO纳米片, 然后在ZnO纳米片上通过逐次化学浴法沉积PbS量子点形成PbS/ZnO复合膜. 利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)详细表征了样品的表面形貌和晶体结构, 并研究了PbS/ZnO复合膜作为量子点敏化太阳能电池光阳极的紫外-可见吸收谱、光电化学性能和表面光电压谱. 对比ZnO纳米片经PbS量子点修饰前后, 发现PbS量子点修饰后光阳极的光吸收和光伏响应均从紫外区拓宽到了可见光区, 同时光电化学性能有了显著提高, 短路电流密度从敏化前的0.1 mA/cm²增加到0.7 mA/cm², 效率由0.04%增加到0.57%. 与单一ZnO纳米片相比, PbS/ZnO复合膜的表面光伏响应强度明显增强, 说明PbS与ZnO之间形成了有利于光生电荷分离的异质结, 从而导致了PbS/ZnO复合膜光电性能的增加.     

Sol–gel derived ZnO/PVP nanocomposite thin film for superoxide radical sensor

Pure ZnO films and ZnO nanoparticle-dispersed polyvinylpyrrolidone (PVP) composite films are prepared on Pyrex glass substrates by the sol–gel dip-coating technique utilizing zinc acetate precursor. The thin films are extensively characterized for surface morphology, chemistry, and nanocrystallite size using various advanced analytical techniques including Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). For the processing conditions considered, ZnO semiconductor thin films with nanocrystallite size 20–30 nm are obtained. The ZnO nanoparticle size in the PVP composite film increases with increase in ZnO content. The resistance of both the synthesized ZnO and ZnO/PVP thin films decrease significantly after exposure to solution containing superoxide anion radicals (SOR). The results thus indicate that ZnO and ZnO/PVP composite thin films can be used as biosensors for SOR and potentially for characterizing the antioxidant properties of fluids.     

RF溅射稀土掺杂ZnO薄膜的结构与发光特性

通过射频磁控溅射技术在Si(111)衬底上制备了未掺杂和La、Nd掺杂ZnO薄膜.XRD分析表明,ZnO薄膜具有c轴择优生长,La、Nd掺杂ZnO薄膜为纳米多晶薄膜.AFM观测,La、Nd掺杂ZnO薄膜表面形貌较为粗糙.从薄膜的室温光致光谱中看到,所有薄膜都出现了395 nm的强紫光峰和495 nm的弱绿光峰,La掺杂ZnO薄膜的峰强度增大,Nd掺杂ZnO薄膜的峰强度减弱,分析了掺杂引起PL峰强度变化的原因.     

A new phase and optical properties of the N-doped ZnO film

In the present paper, the nitrogen-doped ZnO thin films with variable doping levels were produced by using wet chemical process. These ZnO films were investigated by PL spectrum, Raman spectrum, optical reflection and XRD measurement. The XRD result showed that a new phase appeared in the heavy-doped ZnO films. In addition, the small shift of the Raman peak indicated that the stress existed in these ZnO films. This resulted in the disorder of the lattice of the ZnO film and the appearance of new ZnO phase.     

新型工艺制备ZnO薄膜的结构与形貌研究

采用了一种新型工艺制备ZnO薄膜。新工艺采用二步法,首先在N型Si(100)衬底上用离子束沉积溅射一层金属Zn膜,然后通过热氧化金属Zn膜制备ZnO薄膜。通过X射线衍射、原子力显微镜对不同制备工艺下的ZnO薄膜进行结构与形貌的分析比较。研究表明,Zn膜的离子束溅射沉积时间、热氧化时间和辅助枪的离子束对热氧化后的ZnO薄膜再轰击处理对ZnO薄膜的结构与形貌都会产生影响。     

Preferred orientation and interdiffusion in zinc oxide/copper oxide multilayered films

ZnO/CuO and ZnO/ZnO CuO/CuO multilayered films were deposited on Pyrex substrates at <100° C by ion-beam sputtering. The preferred orientation and interdiffusion of these films were examined for films with varying layer repeat lengths (pari thickness). X-ray diffraction analysis showed a preferred ZnO (002) orientation parallel to the surface in annealed ZnO layers of ≈1 to ≈3 nm thickness; no peak was observed for films with a layer repeat length smaller than 1.1 nm. The degree of preferred orientation reduced with increasing layer thickness in ZnO/CuO films and with increasing ZnO CuO thickness in ZnO/ZnO CuO/CuO films. The decay rate of the low-angle X-ray intensity showed that interdiffusivity is largely dependent on the layer repeat length. A smaller layer repeat length gave a larger value of interdiffusivity.     

Effects of buffer layer thickness on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy

ZnO thin films with different buffer layer thicknesses were grown on Si and porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of PS and buffer layer thickness on the structural and optical properties of ZnO thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO buffer layers, the intensity of the (002) diffraction peak for the ZnO thin films and its full width at half maximum (FWHM) decreased with an increase in the thickness of the ZnO buffer layers, indicating an improvement in the crystal quality of the films. On introducing PS as a substrate, the grain sizes of the ZnO thin films became larger and their residual stress could be relaxed compared with the ZnO thin films grown on Si. The intensity ratio of the ultraviolet (UV) to visible emission peak in the PL spectra of the ZnO thin films increased with an increase in buffer layer thickness. Stronger and narrower UV emission peaks were observed for ZnO thin films grown on PS. Their structural and optical properties were enhanced by increasing the buffer layer thickness. In addition, introduction of PS as a substrate enhanced the structural and optical properties of the ZnO thin films and also suppressed Fabry-Perot interference.     

Nanostructured zinc oxide films synthesized by successive chemical solution deposition for gas sensor applications

Nanostructured ZnO thin films have been deposited using a successive chemical solution deposition method. The structural, morphological, electrical and sensing properties of the films were studied for different concentrations of Al-dopant and were analyzed as a function of rapid photothermal processing temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron and micro-Raman spectroscopy. Electrical and gas sensitivity measurements were conducted as well. The average grain size is 240 and 224 Å for undoped ZnO and Al-doped ZnO films, respectively. We demonstrate that rapid photothermal processing is an efficient method for improving the quality of nanostructured ZnO films. Nanostructured ZnO films doped with Al showed a higher sensitivity to carbon dioxide than undoped ZnO films. The correlations between material compositions, microstructures of the films and the properties of the gas sensors are discussed.     

Low wet etching rates of ZnO films prepared by sputtering of mixed ZnO and AlN powder targets

ZnO films codoped with Al and N have been prepared by radio frequency magnetron sputtering in an Ar atmosphere, using targets of mixtures of ZnO and AlN powders. The Al-doped ZnO films are transparent, whereas the films codoped with Al and N are colored. The Al- and N-concentrations in the colored films are estimated to be 4–7 at.% and 1–2 at.%, respectively. No enhancement of the carrier density is seen in the colored ZnO films, whereas the colored films exhibit lower etching rates of 3–5 nm/s in a 0.1 M HCl solution, in comparison with the Al-doped ZnO films. For the colored film, the anisotropic grain growth occurs, and cubic grains are produced after etching. The low etching rates of the colored films are ascribed to the epitaxial growth of AlN films on the surfaces of ZnO grains, rather than the incorporation of Al–N and Al–O bonds into the ZnO lattice.     

低温生长的ZnO单晶薄膜的结构和性能

采用电子束反应蒸镀方法在玻璃衬底上在低温下外延生长了沿 ｃ－轴高度取向的单晶 ＺｎＯ薄 膜,研究了衬底温度及反应气氛中的 Ｏ２对薄膜结构的影响,结合荧光光谱（ＰＬ）和荧光激发光谱（ＰＬＥ） 研究了玻璃上ＺｎＯ薄膜的光学跃迁特性．在３２５℃下获得的单晶薄膜（００２）晶面的ｘ射线衍射峰强度 最大且线宽最窄（０．２８）．反应气氛中的 Ｏ２对 ＺｎＯ 薄膜结构的影响不明显,但对薄膜的 ＰＬ及 ＰＬＥ 特性的影响显著．