Synthesis of radial-aligned GaN nanorods by ammoniating Ga2O3 films on Mg layer deposited on Si(111) substrates

Radial-aligned GaN nanorods were synthesized by ammoniating Ga₂O₃ films on Mg layer deposited on Si(111) substrates. The products were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectra (FTIR) and high-resolution transmission electron microscopy (HRTEM). The SEM images indicated that the products consisted of radial-aligned GaN nanorods. The XRD and the selective area electron diffraction (SAED) patterns showed that nanorods were hexagonal GaN single crystals.     

Synthesis of GaN nanorods by ammoniating Ga2O3 films on TiO2 (rutile) layer deposited on Si(111) substrates

GaN nanorods have been synthesized by ammoniating Ga₂O₃ films on a TiO₂ middle layer deposited on Si(111) substrates. The products were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectra (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD analysis indicates that the crystallization of GaN film fabricated on TiO₂ middle layer is rather excellent. The FTIR, SEM and HRTEM demonstrate that these nanorods are hexagonal GaN and possess a rough morphology with a diameter ranging from 200 nm to 500 nm and a length less than 10 μm, the growth mechanism of crystalline GaN nanorods is discussed briefly.     

Self-catalytic growth and photoluminescence properties of ZnS nanostructures

Mass production of uniform wurtzite ZnS nanostructures has been achieved by a H₂-assisted thermal evaporation technique. X-ray diffraction (XRD) analyses, scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) observations show that the ZnS nanostructures consist of nanobelts, nanosheets with a hexagonal wurtzite structure. The as-synthesized nanobelts have a length of several tens of micrometers and a width of several hundreds of nanometers. Self-catalytic vapor-liquid-solid (VLS) growth and vapor-solid (VS) growth are proposed for the formation of the ZnS nanostructures because neither a metal catalyst nor a template was introduced in the synthesis process. Room-temperature photoluminescence measurement indicates that the synthesized ZnS nanostructures have a strong emission band at a wavelength of 443 nm, which may be attributed to the presence of various surface states.     

Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia

GaN nanowires were synthesized by ammoniating Ga₂O₃ films on Ti layers deposited on Si (111) substrates at 950 °C. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD, FTIR and HRTEM studies showed that these nanowires were hexagonal GaN single crystals. SEM observation demonstrated that these GaN nanorods with diameters ranging from 50 nm to 100 nm and lengths up to several micrometers intervene with each other on the substrate.     

ZnO单晶堆垒纳米棒的制备与表征

在Au点阵模板上磁控溅射ZnO薄膜,然后在O2气氛下1000℃退火制备了ZnO单晶堆垒纳米棒。采用扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、X射线衍射(XRD)和傅立叶变换红外(FTIR)光谱对样品进行分析。结果表明,ZnO纳米棒是由诸多单晶堆垒而成,每个单晶均为六方纤锌矿结构,纳米棒直径在100nm左右。初步探讨了ZnO单晶堆垒纳米棒可能的生长机理。     

Hydrothermal fabrication of copper sulfide nanocones and nanobelts

Novel copper sulfide nanocones and nanobelts have been hydrothermally fabricated at 140 °C for 24 h with acrylamide and sodium dodecyl benzene sulfonate (SDBS) as surfactants, respectively. X-ray diffraction (XRD) pattern indicates that the as-prepared samples are the pure hexagonal phase CuS. XPS spectra show that the ratio of Cu/S is about 1:1.084. The morphology was characterized by scanning electron microscopy (SEM) and field emission scanning electron microscopy (FE-SEM) techniques. Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) images reveal that nanocones and nanobelts grow along the [110] axis. The surfactant is found to be critical to the morphologies of the products. The possible formation mechanism is also discussed.     

Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

The GaN nanowires were successfully synthesized on Si(111) substrates by ammoniating the Ga₂O₃/ZnO films at 900 °C. The structure and morphology of the as-prepared GaN nanowires were studied by X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), scanning electron microscopy (SEM) and field-emission transmission electron microscopy (FETEM). The results show that the single-crystal GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm, which are conducive to the application of nanodevices. Finally, the growth mechanism is also briefly discussed.     

CdS及其稀土掺杂纳米带的制备与发光性质的研究

采用热蒸发法制备CdS及其稀土掺杂的纳米带(CdS∶Ce3+、CdS∶Er3+)。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和荧光光谱仪(PL)对纳米带的形貌、晶体结构和发光性质进行了表征和分析。结果表明,所制备的纳米带的外形规则,表面光滑、平整,纳米带的厚度大约在20～60nm范围内;纳米带具有六方结构,晶格常数a=0.414nm、c=0.671nm;CdS纳米带的光致发光谱的谱峰位于405nm左右;CdS∶Ce3+纳米带的光致发光谱的谱峰位于523和535nm处;CdS∶Er3+纳米带的光致发光谱中观察到3个强的发光峰,分别位于525、556和582nm处。     

Gallium nitride nanowires doped with magnesium

GaN nanowires doped with Mg have been synthesized on Si (111) substrate through ammoniating Ga₂O₃ films doped with Mg under flowing ammonia atmosphere. The Mg-doped GaN nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. The diameters of the nanowires ranged 20-30 nm and the lengths were about hundreds of micrometers. The intense PL peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to Burstein-Moss effect. The growth mechanism of the crystalline GaN nanowires is discussed briefly.     

Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates

Needle-shaped GaN nanowires have been synthesized on Si (111) substrate through ammoniating Ga₂O₃/MgO films under flowing ammonia atmosphere at the temperature of 950 °C. The as-synthesized GaN nanowires were characterized by X-ray diffraction (XRD), Fourier transformed infrared (FTIR) spectroscopy, scanning electron microscope (SEM) and high-resolution transmission electron microscopy (HRTEM). The results demonstrate that these nanowires are hexagonal GaN and possess a smooth surface with an average diameter about 200 nm and a length ranging from 5 μm to 15 μm. In addition, the diameters of these nanowires diminish gradually. The growth mechanism of crystalline GaN nanowires is discussed briefly.     

Water-assisted growth and characterization of SnO2 nanobelts

SnO₂ nanobelts have been synthesized by water-assisted growth at 850 °C using high pure Sn powders as the source materials. The as-synthesized products were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy(TEM), high-resolution transmission electron microscopy (HRTEM), energy dispersed X-ray spectroscopy (EDX), infrared spectrum (IR) and room-temperature photoluminescence (PL) spectrum. XRD pattern of the sample is quite in accord with the standard pattern of the tetragonal rutile SnO₂; SEM and TEM images show that the uniform single-crystalline SnO₂ nanobelts are about tens of micrometers in length, 70-100 nm in width and 5-8 nm in thickness, and is smooth in surface. The special IR and PL properties were also detected by IR and PL testing. The growth mechanisms and special properties relative to the SnO₂ nanostructures are discussed.     

Growth of tin dioxide nanobelts via Au-catalytic VLS process

Ultra-long (several millimeters) tin dioxide SnO2 nanobelts were prepared by chemical vapor deposition at 850 degrees C. The X-ray powder diffraction (XRD) indicated that the as-prepared sample is tetragonal phase SnO2; field emission scanning electron microscopy (FESEM) reveals the as-prepared SnO2 is uniform nanobelts; transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) studies show the nanobelts is monocrystalline with width of hundreds of nanometers and growth along [101] crystal direction; X-ray energy-dispersive spectrometer (EDS) and photoluminescence (PL) spectrum were used to detail its composition and optical properties. The possible formation mechanism of these ultra-long nanobelts was also proposed on the basis of experiments.     

ZnO准一维纳米结构生长形态的演化机理

利用气相生长系统,通过调控实验参数,制备了多种形貌的ZnO准一维结构,如纳米条带、[011-0]和[21-1-0]取向的单侧生齿的梳状纳米条带、微米尺度的梳状结构,由多节状六角棱柱和八角棱柱组装成的微米条带等.通过X射线衍射、扫描电子显微镜及其所加载的能谱分析和背散射电子衍射仪、高分辨透射电子显微镜等分析技术, 对其中具有代表性的介观结构进行了系统的形貌分析和细致的结构解析.分析出基本的结构单元及其复合体, 揭示了显微尺度下ZnO晶体的外形多样性以及其形态演化中的关联和规律,即ZnO纳米条带、梳状结构和多节状微米条带具有晶体结构上的同一性.     

A facile hydrothermal synthesis route to single-crystalline lead iodide nanobelts and nanobelt bundles

Single-crystalline PbI2 nanobelt bundles have been prepared using lead monoxide powder and hydroiodic acid as reagents at the assistance of dodecylamine. The assembled PbI2 nanobelt bundles can be spilt into nanobelts through long-playing sonication. The prepared nanobelt bundles consist of several nanobelts and the nanobelts have lengths of tens of microns, widths of 50-150 nanometers, and thicknesses ca. 20 nanometers. X-Ray diffraction (XRD), scanning electron microscopy (SEM), field emission scanning electron microscopy (FE-SEM) transmission electron microscopy (TEM), electronic diffraction (ED), and high-resolution transmission microscopy (HRTEM) was used to characterize the as-prepared product. The possible formation mechanism of PbI2 nanobelt bundles was tentatively proposed.     

Fabrication of single-crystalline gallium nitride nanowires by using alginate as template

Hexagonal gallium nitride nanowires were synthesized successfully by solvothermal method with alginate as template. The microstructure, morphologies and compositions of the as-prepared product were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), high resolution transmission electron microscopy (HRTEM), and energy dispersive X-ray (EDX). Results suggested that the rod-like nanowires were hexagonal single-crystalline GaN growing along [001] direction. The photoluminescence spectra (PL) of the GaN revealed that the as-synthesized sample possesses excellent optical properties.     

Large-scale synthesis of single crystal silver nanowires by a sodium diphenylamine sulfonate reduction process

Silver nanowires with high aspect ratios of up to more than 60 were synthesized on a large scale by the redox reaction between silver nitrate and sodium diphenylamine sulfonate at room temperature and in the absence of surfactant and hard-template and seed. When the molar ratio of reductant sodium diphenylamine sulfonate and silver nitrate < or =1, most products were all the nanowires. When the molar ratio increases to 2:1, silver nanowires and nanobelts were concomitantly formed. The redox product N, N'-diphenylbenzidinedisulfonate and sodium diphenylamine sulfonate all play an important role in the formation of silver nanostructures. The structure, morphology, and composition of the silver nanowires were characterized by the X-ray powder diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray energy dispersive microanalysis (EDX), and UV-Vis spectroscopy respectively. High-resolution transmission microscopy (HRTEM) and selected area electron diffraction (SAED) reveal the single-crystal nature of the silver nanowires.     

氨化Si基Ga2O3/Ti制备GaN纳米线

采用磁控溅射技术先在硅衬底上制备Ga2O3/Ti薄膜,然后在950℃时于流动的氨气中进行氨化反应制备GaN薄膜.X射线衍射(XRD)、傅立叶红外吸收光谱(FTIR)、选区电子衍射(SAED)和高分辨透射电子显微镜(HRTEM)的结果表明采用此方法得到了六方纤锌矿结构的GaN单晶纳米线.通过扫描电镜(SEM)观察发现纳米线的形貌,纳米棒的尺寸在50～150nm之间.     

电泳沉积法制备GaN薄膜的结构和组分分析

采用电泳沉积法在Si(111)衬底上制备出了GaN薄膜.用X射线衍射(XRD)、傅立叶红外吸收(FTIR)谱、X射线光电子能谱(XPS)和扫描电镜(SEM)对样品的结构、组分和形貌进行了分析.结果显示所得样品为六方纤锌矿结构的GaN多晶薄膜.     

LiV3O8纳米带的低温熔盐合成及其电化学性能

为了改进三聚钒酸锂作为锂离子电池正极材料的电化学性能,以LiNO3、LiCl和NH4VO3作为反应原料,通过一种简单的低温熔盐合成方法（LT-MSS）在250℃温度条件下制备得到带状LiV3O8纳米材料.X射线衍射（XRD）和X射线光电子能谱（XPS）分析结果表明所得产物为单斜相LiV3O8.扫描电镜（SEM）、透射电镜（TEM）和高分辨透射电镜（HRTEM）照片显示该产物为单晶纳米带形貌,沿[001]方向生长.电化学测试表明该产物储锂量高,循环性能良好.实验结果表明采用低温熔盐合成法制备LiV3O8能够有效提高所得产物的结构、形貌和电化学性能.     

Synthesis and characterization of nanocrystalline gaN by ammonothermal method using CsNH2 as mineralizer

Nanocrystalline GaN was ammonothermally synthesized at 430 degrees C with CsNH2 as mineralizer. X-ray powder diffraction (XRD) analysis showed that the nanocrystalline GaN were of hexagonal structure. The average diameter of nanocrystalline GaN was about 4.5 nm according to Scherer's formula using the full-width at half-maximum (FWHM) of the (110) peak. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) observation confirmed the size distribution and phase state of the GaN nanocrystals. The calculated lattice parameters obtained both from XRD and High-Resolution Transmission Electron Microscopy (HRTEM) were a = 3.197 A, c = 5.195 A, which were larger than the highly crystallized GaN bulk crystal. Room temperature photoluminescence (PL) measurement exhibited a weak band-edge emission at about 390 nm (3.18 eV), indicating an obvious red-shift from the bandgap of bulk GaN (3.39 eV). A green luminescence (GL) emission located at 485 nm (2.56 eV) and a yellow luminescence (YL) defect-related emission peak centered at 553 nm (2.24 eV) were also observed. The advantage of using CsNH2 as mineralizer for growth GaN, the possible origins of the red-shift of bandgap, YL and GL band were discussed. The red-shift of the bandgap of the as-synthesized GaN nanocrystals was possibly attributed to the expansion of lattice parameters.