应变GaN/Al_xGa_(1-x)N量子阱中电子的跃迁能量

考虑电场及隧穿效应的影响,基于常微分数值计算方法,并利用量子阱系统边界条件自洽求解薛定谔方程和泊松方程,获得电子本征态。以典型的GaN/AlxGa1-xN量子阱为例,计算了势阱中电子的本征能级和带内跃迁能。结果表明,电子在量子阱中的能量是量子化的,内建电场促使能级间距增大;调节阱宽及组分可以获得不同能级并改变跃迁能。     

GaxIn1-xAs/GaInAsP应变量子阱结构能带的计算

对含有Luttinger-Kohn哈密顿量的有效质量方程，利用S.L.Chuang提出的传递矩阵法，计算了量子阱中不同Ga组分的GaxIn1-xAs/GaInAsP应变量子阱结构的能带，该结构可被选作980nm光通信泵浦激光器的有源层，研究还得到了GaxIn1-xAs/GaInAsP双应变量子阱结构中电子和空穴的能级以及能级的色散关系。     

离子刻蚀Ⅲ-Ⅴ族半导体材料的损伤机理

采用感应耦合等离子体（ICP）刻蚀技术对InGaN／AlGaN、InAsP／InP应变多量子阱和InAsP／InGaAsP应变单量子阱进行了系统研究，光致发光特性分析表明轻度离子刻蚀后量子阱发光强度得到显著增强，导致发光效率增强的物理机理是：干法刻蚀一方面使量子阱表面变粗糙，使出射光逃逸几率增大；另一方面Ar离子隧穿引起的量子阱内部微结构变化则是发光效率提高的主要原因。     

调制掺杂Al0.27Ga0.73As/GaAs多量子阱结构的光致发光

在调制掺杂（Si）Al0.27Ga0.73As／GaAs多量子阱结构的光致发光谱中，观测到一个强发光峰及多个低能弱发光峰．强发光峰是量子阱中基态电子与重空穴复合，即激子复合形成的，其低温发光线形可用Voigt函数拟合.低能弱峰是势垒层Al0.27Ga0.73As中DX中心能级上的电子跃迁到SiAs原子而引起，由此确定DX中心有四个能级，其激活能分别为0．35、037、0．39、0．41eV     

测试环境对碳纳米管场发射性能的影响

采用CVD法在Ni丝上直接沉积碳纳米管,并应用二极管结构对其场发射性能进行测试,测试结果表明:(1)碳管表面态对其场发射稳定性影响明显,运用密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA)对碳管表面吸附水分子前后电子能带结构和态密度作比较,发现吸附水分子后碳管功函数降低,费米能级处电子态密度增大,有利于增大碳管场发射电流;(2)高真空是获得碳管场发射稳定性一个必要条件;(3)荧光粉对碳管场发射电流也有一定贡献,但大的场发射电流情形下可忽略其影响。     

氧等离子体对碳纳米管改性的分子模拟研究

采用密度泛函理论研究了氧等离子体改性前后的(8,0)碳纳米管的性能,比较了改性前后结合能、能带结构及态密度之间的差异,结果表明改性后碳管的结合能变小,其表面的分散性提高,从而可以稳定存在。另外,尽管碳管的能隙Eg非常小,但其价带顶和导带底均未穿过费米能级,验证了(8,0)碳纳米管是半导体管的理论。改性后碳纳米管的几何结构受到羟基和羧基的影响很大,横截面C-C间距增大,比表面积增加;同时,羟基和羧基使得费米能Ef以及费米能级上的态密度明显增大,而且羧基的作用更显著,这表明氧等离子体增强了碳纳米管的化学活性,是一种有效的改性方法。     

单结GaAs量子阱太阳能电池

介绍了采用金属有机化学气相沉积方法制备的单结GaAs量子阱太阳能电池.X射线双晶衍射表明电池中的材料缺陷较少,具有良好结晶质量与周期性.光谱响应实验表明量子阱结构的引入可以扩展吸收光谱.与无量子阱结构的电池相比,量子阱电池增加了输出电流,但同时也带来了开路电压的下降.量子阱电池在长波范围内短路电流明显增加,使得量子阱电池可以代替三结电池中的中间电池,优化电池结构设计,提高三结电池的转换效率.     

CdTe/CdMnTe多量子阱的生长和激子复合动力学性质的研究

用分子束外延在GaAs衬底上生长了CdTe/Cd0.8Mn0.2Te多量子 结构,利用X射线衍射（XRD）、低激发密度下的PL光谱和变密度激发的ps时间分辨光谱研究了CdTe/CdMnTe多量子阱的结构和激子复合特性。在变密度激发的ps时间分辨光谱中,发现不同激发密度下发光衰减时间不同,认为它的机理可能是无辐射复合引起的。     

MOCVD 生长及 TEM 表征 GaAs/Al_xGa_(1-x)As 量子异质结构材料

本文报道 MOCVD 生长 GaAs/Al_xGa_(1-x)As 量子异质结构材料(超晶格、量子阱及量子共振隧穿二极管),采用横断面透射显微术表征了样品的界面结构。实验表明:多量子阱与超晶格的周期性良好,层与层之间界面清晰,采用[100]带轴入射,观察到超晶格的 TEM 卫星衍射斑,测量到量子阱中电子的子能级跃迁吸收。研究了生长工艺和材料结构的关系,分析了影响 RT 器件的因素。     

一般费米量子信道的经典容量

文章在费米子平均占据数受限的情况下 ,利用费米型量子高斯加性噪声的球谐函数展开方法 ,给出单模费米子在一般费米量子加性信道上传输经典信息的经典容量     

CdS量子点的制备和光学性质

以醋酸镉、硫粉为原料制备CdS量子点,研究了硫的加入量对其光学性质的影响,结果表明:合成的CdS量子点粒径均匀,分散性较好,随着硫加入量的增加CdS量子点的粒径增大;反应中过量的硫能有效地填补硫空位,从而抑制表面态发光,同时,ODA的修饰也能有效地钝化表面态,减小表面态的发光强度.     

Manipulating surface states in topological insulator nanoribbons

Topological insulators display unique properties, such as the quantum spin Hall effect, because time-reversal symmetry allows charges and spins to propagate along the edge or surface of the topological insulator without scattering. However, the direct manipulation of these edge/surface states is difficult because they are significantly outnumbered by bulk carriers. Here, we report experimental evidence for the modulation of these surface states by using a gate voltage to control quantum oscillations in Bi(2)Te(3) nanoribbons. Surface conduction can be significantly enhanced by the gate voltage, with the mobility and Fermi velocity reaching values as high as ~5,800?cm(2)?V(-1)?s(-1) and ~3.7?×?10(5)?m?s(-1), respectively, with up to ~51% of the total conductance being due to the surface states. We also report the first observation of h/2e periodic oscillations, suggesting the presence of time-reversed paths with the same relative zero phase at the interference point. The high surface conduction and ability to manipulate the surface states demonstrated here could lead to new applications in nanoelectronics and spintronics.     

Helical states of topological insulator Bi₂Se₃

We report density functional theory analysis of the electronic and quantum transport properties of Bi(2)Se(3) topological insulator, focusing on the helical surface states at the Fermi level E(F). The calculated Dirac point and the tilt angle of the electron spin in the helical states are compared quantitatively with the experimental data. The calculated conductance near E(F) shows a V-shaped spectrum, consistent with STM measurements. The spins in the helical states at E(F) not only tilts out of the two-dimensional plane, they also oscillate with a 3-fold symmetry going around the two-dimensional Brillouin zone. The helical states penetrate into the material bulk, where the first quintuple layer contributes 70% of the helical wave functions.     

Electronic Structure in Underdoped Cuprates Due to the Emergence of a Pseudogap

The phenomenological Green’s function developed in the works of Yang, Rice, and Zhang has been very successful in understanding many of the anomalous superconducting properties of the deeply underdoped cuprates. It is based on considerations of the resonating valence bond spin liquid approximation and is designed to describe the underdoped regime of the cuprates. Here, we emphasize the region of doping, x, just below the quantum critical point at which the pseudogap develops. In addition to Luttinger hole pockets centered around the nodal direction, there are electron pockets near the antinodes which are connected to the hole pockets by gapped bridging contours. We determine the contours of nearest approach as would be measured in angular resolved photoemission experiments and emphasize signatures of the Fermi surface reconstruction from the large Fermi contour of Fermi liquid theory (which contains 1+x hole states) to the Luttinger pocket (which contains x hole states). We find that the quasiparticle effective mass renormalization increases strongly toward the edge of the Luttinger pockets beyond which it diverges.     

Hole transport due to shallow acceptors along boron doped SiGe quantum wells

Lateral conductivity and magnetotransport measurements were performed with SiGe single quantum well (QW) structures doped with boron in the QW. The conductivity at low temperatures (T) is shown to be due to hopping over B centers while at higher T, it is due to two-stage excitation: thermal activation of holes from the ground to strain-split B states are followed by hole tunneling into the valence band. The tunneling is due to a potential drop across the QW which is due to hole capture at surface states of the Si cap layer making the surface charged. The external potential applied across the QW essentially changes the lateral conductivity as well as the activation energy. The calculations of band profile, free carrier concentration in the QW and acceptor population, as well as an effect on the transverse electric field were carried out taking into account the charging of surface states.     

Quantum criticality and incipient phase separation in the thermodynamic properties of the Hubbard model

Transport measurements on the cuprates suggest the presence of a quantum critical point (QCP) hiding underneath the superconducting dome near optimal hole doping. We provide numerical evidence in support of this scenario via a dynamical cluster quantum Monte Carlo study of the extended two-dimensional Hubbard model. Single-particle quantities, such as the spectral function, the quasi-particle weight and the entropy, display a crossover between two distinct ground states: a Fermi liquid at low filling and a non-Fermi liquid with a pseudo-gap at high filling. Both states are found to cross over to a marginal Fermi-liquid state at higher temperatures. For finite next-nearest-neighbour hopping t', we find a classical critical point at temperature T(c). This classical critical point is found to be associated with a phase-separation transition between a compressible Mott gas and an incompressible Mott liquid corresponding to the Fermi liquid and the pseudo-gap state, respectively. Since the critical temperature T(c) extrapolates to zero as t' vanishes, we conclude that a QCP connects the Fermi liquid to the pseudo-gap region, and that the marginal Fermi-liquid behaviour in its vicinity is the analogue of the supercritical region in the liquid-gas transition.     

Effects of sidewall functionalization on conducting properties of single wall carbon nanotubes

We investigated the conducting properties of functionalized single wall nanotubes (SWNTs) with a finite addend concentration. Robust differences are found between monovalent and divalent additions. For the former a small number of addends can significantly disrupt the ballistic conductance of nanotubes near the Fermi level. As the concentration increases the conductance decreases rapidly and approaches zero at addend to C ratio around 25%. In contrast, divalent functionalizations have weak effects, and the nanotube quantum conductance remains above 50% of that of a perfect tube even for an addend concentration as large as 25%. These differences can be attributed to the formation of impurity states near the Fermi level for monovalent additions, while divalent addends create impurity states far away from the Fermi level.     

Quantum oscillations in the high-Tc cuprates

We review recent progress in the study of quantum oscillations as a tool for uniquely probing low-energy electronic excitations in high-T(c) cuprate superconductors. Quantum oscillations in the underdoped cuprates reveal that a close correspondence with Landau Fermi-liquid behaviour persists in the accessed regions of the phase diagram, where small pockets are observed. Quantum oscillation results are viewed in the context of momentum-resolved probes such as photoemission, and evidence examined from complementary experiments for potential explanations for the transformation from a large Fermi surface into small sections. Indications from quantum oscillation measurements of a low-energy Fermi surface instability at low dopings under the superconducting dome at the metal-insulator transition are reviewed, and potential implications for enhanced superconducting temperatures are discussed.     

Spin Filter Effect in a Parallel Double Quantum Dot

We present a theoretical study of the spectral and the spin-dependent transport properties of a few electron semiconductor parallel double quantum dot (DQD) in the presence of local induced Zeeman splittings at the quantum dots. Working in an extended Hubbard model and treating the coupled QD as a single coherent system, the linear response spin-dependent conductance is calculated at low temperatures. We analyze the conditions such that the device would operate as a bipolar spin filter by only varying the incident electron Fermi energy from non-magnetic leads.     

Quantum chemical calculation of electron transfer at metal/polymer interfaces

Calculation of contact charging at metal/polymer interfaces were performed by a quantum chemical method (DV-Xa). In the calculation, model clusters with dangling bonds were used. The model clusters showed surface states in the density of states (DOS), the electron transfer occurred at the contact interfaces between polymer and Al. Then, 0.3 nm was a reasonable value as the contact distance in the present simulation.Contact electrifications between PTFE and six metals, such as Pt, Au, Cu, Al, Pb and Ca were simulated. The charge transferred from the metal to PTFE depended on the work function of the metals, and had a gap in range of 4.25–4.28 eV. According to the gap of metals were classified into two groups. If Fermi level of a metal is lower than the lowest unoccupied molecular orbital (LUMO) level of PTFE, the electrons of the metal transfer to the surface state (interface state). Electrons in the other metals with a higher Fermi level move into the conduction band of PTFE.