Preparation, electrical and optical properties of (Pb,Ca)TiO3 thin films using a modified sol-gel technique

Calcium modified lead titanate sol was synthesized using lead acetate trihydrate, calcium nitrate tetrahydrate and titanium tetra-n-butoxide as starting materials, methanol and ethanolamine were selected as solvent and stabilizing or complexing agent, respectively. (Pb_0.76Ca_0.24)TiO₃ thin films were prepared on platinum-coated silicon and fused silica substrates with the solution using the spinning method. The surface morphology and crystal structure, surface compositions and chemical states, electrical and optical properties of the thin films were investigated. The films have good composition homogeneity and thickness uniformity. The dielectric constant and dissipation factor of 1 kHz at room temperature were found to be 280 and 0.027, respectively, for thin films with 0.5 μm thickness annealed at 600°C for 1 h. The remanent polarization and coervive field were 15 μC/cm² and 64 kV/cm, respectively. The thin films exhibited good optical transmissitivity, and had optical direct transitions. The dispersion relation of refractive index and wavelength followed the single electron oscillation model. The band gap of the film which annealed at 650°C was 3.68 eV. The results also confirmed that ethanolamine was very effective in preparing uniform and dense oxide films, owing to the superior stability of the sols during hydrolytic polycondensation.     

Dielectric properties of vacuum-evaporated films of tungsten oxide

The dielectric constant of vacuum-evaporated films of tungsten oxide has been measured in the frequency range 300 Hz–10 MHz at various temperatures (25°C–155°C) and with various thickness (300–-5000Å). The frequency response exhibits a dispersion region between 10 and 100 kHz at room temperature (25°C) which shifts to higher frequencies as the temperature rises. The thickness dependence of the dielectric constant shows a rapid rise at low thicknesses but gradually attains a saturation value at thicknesses at which the density of the films is seen to approach its bulk value. Electron diffraction patterns show that these films are stoichiometric, possibly due to the very slow rate of evaporation. The films have a dielectric strength of the order of 5.5 × 10⁶ V cm⁻¹.     

Luminescence of composites based on oxide aerogels incorporated in silica glass host matrix

This paper deals with the elaboration and photoluminescence (PL) examination of oxide powder (OP = ZnO, Al₂O₃, SnO₂, TiO₂) incorporated in silica host matrix. OP, in the first step, was prepared by a sol–gel method using supercritical drying of ethyl alcohol. The obtained powder, in a second step, was incorporated in silica aerogel monolith using tetraethylorthosilicate as SiO₂ precursor and ethyl alcohol supercritical conditions for drying. In the third step, silica aerogel containing oxide powders were heated under natural atmosphere at 1200 °C for 2 h to form the composites that exhibited a strong PL bands at Vis–IR range. Photoluminescence excitation (PLE) measurements show different origins of the emission. It was suggested that OH-related radiative centres and non-bridging oxygen hole centres (NBOHCs) defects resulting from thermal treatment and crystallization at the interfaces between OP and silica host matrix, were responsible for the bands at 400–600 and 700–900 nm respectively.     

Solution sol-gel synthesis and phase evolution studies of cordierite xerogels, aerogels and thin films

A sol-gel process employing silicon alkoxide, chelated aluminum sec-butoxide, and magnesium acetate as starting precursors, was used to synthesize cordierite xerogels, aerogels and thin films. The xerogels were prepared using normal drying conditions, while supercritical drying conditions were employed to synthesize the aerogels. Thin films were grown by spin coating polymerized sols on (100) silicon substrates. The aerogel and xerogel powders as well as thin films were studied for phase evolution and phase stability using X-ray diffraction. All three forms indicated the formation of the μ-cordierite phase at 900°C. In addition, the aerogels and thin films showed evolution of other phases. The initiation of the μ → cordierite transformation was observed in the temperature range 1000–1100°C for both the xerogels and thin films, while μ-cordierite obtained from the aerogels showed a much higher stability and transformed to -cordierite only at 1200°C.     

Synthetic process of the sol–gel derived Pb(Zr0.53Ti0.47)O3 films using poly vinyl butyral binder

Synthetic process of sol–gel grown lead-zirconate-titanate (PZT) films using poly vinyl butyral (PVB) binder has been studied. By the present method, thick PZT films with about 7 μm in thickness were successfully grown, whereas thick films were not achieved without the use of the binder. In the synthetic process, amorphous PZT particles with 0.6–1.0 μm in diameter were formed at a relatively low temperature of 50°C and Pb projections were observed at 300°C. Furthermore, PbO was observed at the surface of amorphous PZT particles at 400°C. At 500°C, PZT perovskite phase started to be observed together with residual PbO phase. Finally, single PZT perovskite phase, which shows the dielectric constant and dissipation factor of 145.5 and 0.032, respectively, at a frequency of 1 kHz, was obtained at 800°C. We suggest that the use of PVB binder plays an important role in the fabrication of thick PZT film.     

Electrical sensing properties of silica aerogel thin films to humidity

Mesoporous silica aerogel thin films have been fabricated by dip coating of sol-gel derived silica colloid on gold electrode-patterned alumina substrates followed by supercritical drying. They were evaluated as the sensor elements at relative humidity 20-90% and temperature 15-35 °C under an electrical field of frequency 1-100 kHz. Film thickness and pore structure were two main parameters that determined the sensor performance. The film with a greater thickness showed a stronger dielectric characteristic when moisture abounded, and presented a smaller hysteresis loop and a higher recovery rate, due to the large size of pore throats. As the film thickness decreased, at low humidity the surface conductivity enhanced and the response rate increased. The silica aerogel based humidity sensor can be modeled as an equivalent electrical circuit composed of a resistor and a capacitor in parallel, and is driven by ionic conduction with charged proton carriers.     

Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water

Atomic layer growth of titanium dioxide from titanium ethoxide and water was studied. Real-time quartz crystal microbalance measurements revealed that adsorption of titanium ethoxide is a self-limited process at substrate temperatures 100–250°C. A relatively small amount of precursor ligands was released during titanium ethoxide adsorption while most of them was exchanged during the following water pulse. At temperatures 100–150°C, incomplete reaction between surface intermediates and water hindered the film growth. Nevertheless, the deposition rate reached 0.06 nm per cycle at optimized precursor doses. At substrate temperatures above 250°C, the thermal decomposition of titanium ethoxide markedly influenced the growth process. The growth rate increased with the reactor temperature and titanium ethoxide pulse time but it insignificantly depended on the titanium ethoxide pressure. Therefore reproducible deposition of thin films with uniform thickness was still possible at substrate temperatures up to 350°C. The films grown at 100–150°C were amorphous while those grown at 180°C and higher substrate temperature, contained polycrystalline anatase. The refractive index of polycrystalline films reached 2.5 at the wavelength 580 nm.     

Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon

ZrO₂ films of thicknesses varied in the range of 3–30 nm were atomic layer deposited from ZrI₄ and H₂O–H₂O₂ on p-Si(100) substrates. The effects of film thickness and deposition temperature on the structure and dielectric properties of ZrO₂ were investigated. At 272 and 325 °C, the growth of ZrO₂ started with the formation of the cubic polymorph and continued with the formation of the tetragonal polymorph. The ratio between the lattice parameters increased with the film thickness and growth temperature. The effective permittivity, determined from the accumulation capacitance of Hg/ZrO₂/Si capacitors, increased with the film thickness, reaching 15–17 in 25-nm-thick films. The permittivity decreased with the increasing growth temperature. The hysteresis of the capacitance–voltage curves was the narrowest for the films deposited at 325 °C, and increased towards both lower and higher deposition temperatures.     

Deposition and dielectric properties of CaCu3Ti4O12 thin films on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully deposited on Pt/Ti/SiO₂/Si(1 0 0) substrates using pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CCTO thin films were greatly affected by the substrate temperature and oxygen pressure. Thin films with a (2 2 0) preferential orientation were obtained at the substrate temperature above 700 °C and oxygen pressure above 13.3 Pa. The 480-nm thin films deposited under 720 °C and 26.6 Pa have a fairly high dielectric constant of near 2000 at 10 kHz and room temperature. The values of the dielectric constant and loss and their temperature-dependence under different frequency are comparable with those obtained in the epitaxial CCTO films grown on oxide substrates.     

Morphological changes induced by thermal anneals in NiFe/Ag multilayers; their relation to the resistive and magnetoresistive properties

(Ti, Al)N films have drawn much attention as alternatives for TiN coatings, which are oxidized easily in air above 500 °C. We have investigated the effect of Al content on the oxidation resistance of (Ti_{1 − x}Al_x)N films prepared by r.f. reactive sputtering.

(Ti_{1 − x}Al_xN films (O ≤ x ≤ 0.55) were deposited onto fused quartz substrates by r.f. reactive sputtering. Composite targets with five kinds of Al-to-Ti area ratio were used. The sputtering gas was Ar (purity, 5 N) and N₂ (5 N). The flow rate of Ar and N₂ gas was kept constant at 0.8 and 1.2 sccm, respectively, resulting in a sputtering pressure of 0.4 Pa. The r.f. power was 300 W for all experiments. Substrates were not intentionally heated during deposition. The deposited films (thickness, 300 nm) were annealed in air at 600 900 °C and then subjected to X-ray diffractometer and Auger depth profiling.

The as-deposited (Ti_{1 − x}Al_x)N films had the same crystal structure as TiN (NaCl type). Al atoms seemed to substitute for Ti in lattice sites. The preferential orientation of the films changed with the Al content of the film, x. Oxide layers of the films grew during annealing and became thicker as the annealing temperature increased. The thickness of the oxide layer grown on the film surface decreased with increasing Al content in the film. For high Al content films an Al-rich oxide layer was grown on the surface, which seemed to prevent further oxidation. All of the films, however, were oxidized by 900 °C annealing, even if the Al content was increased up to 0.55.     

Drying temperature effects on microstructure, electrical properties and electro-optic coefficients of sol-gel derived PZT thin films

Transparent lead zirconium titanate (PZT) thin film is suitable for a variety of electro-optic application, and the increasing of the electro-optic coefficient of PZT film is one of the important factors for this application. In this study, the main processing variable for improving an electro-optic coefficient was the drying temperature: 300, 350, 450 and 500°C in sol-gel derived PZT thin films. The highest linear electro-optic coefficient (1.65×10⁻¹⁰ (m/V)) was observed in PZT film dried at 450°C. The PZT film showed the highest perovskite content, polarization (P_max=49.58 μC/cm², P_r=24.8 μC/cm²) and dielectric constant (532). A new two-beam polarization (TBP) interferometer with a reflection configuration was used for electro-optic testing of PZT thin films which allows measurement of the linear electro-optic coefficient of thin film with strong Fabry–Perot (FP) effect usually present in PZT thin film.     

A Stability Study of Clindamycin Hydrochloride and Phosphate Salts in Topical Formulations

The stability of clindamycin hydrochloride and clindamycin phosphate was studied in topical liquid formulations prepared with the following solvents: solvent A (70% isopropanol, 10% propylene plycol and 20% water), solvent B (48% isopropanol, polyoxyethelene ethers, acetone, salicylic acid and allantoin), solvent C (40% alcohol, acetone, polysorbate 20, fragrance and water) and “standard” (50% isopropyl alcohol, propylene glycol and water) in glass and plastic containers at 25°, 40°, and 50°C.

It was found that, in general, better stability was obtained in glass containers than in plastic containers. At 25°C both the clindamycin hydrochloride and phosphate formulations in solvent B showed poorer stability than in the other solvents irrespective of the type of container, while formulations in solvent C showed the best stability. In addition, the effect of the pH on the stability of the formulations was determined, and it was clear that at pH values below 4 the stability of all formulations decreased.     

Low-temperature growth and orientational control in RuO2 thin films by metal-organic chemical vapor deposition

For growth temperatures in the range of 275°C to 425°C, highly conductive RuO₂ thin films with either (110)- or (101)-textured orientations have been grown by metal-organic chemical vapor deposition (MOCVD) on both SiO₂/Si(001) and Pt/Ti/SiO₂/Si(001) substrates. Both the growth temperature and growth rate were used to control the type and degree of orientational texture of the RuO₂ films. In the upper part of this growth temperature range ( 350°C) and at a low growth rate (< 3.0 nm/min.), the RuO₂ films favored a (110)-textured orientation. In contrast, at the lower part of this growth temperature range ( 300°C) and at a high growth rate (> 3.0 nm/min.), the RuO₂ films favored a (101)-textured orientation. In contrast, higher growth temperatures (> 425°C) always produced randomly-oriented polycrystalline films. For either of these low-temperature growth processes, the films produced were crack-free, well-adhered to the substrates, and had smooth, specular surfaces. Atomic force microscopy showed that the films had a dense microstructure with an average grain size of 50–80 nm and a rms. surface roughness of 3–10 nm. Four-probe electrical transport measurements showed that the films were highly conductive with resistivities of 34–40 μΩ-cm (at 25°C).     

常压干燥制备SiO2气凝胶的研究

以水玻璃为硅源,采用常压干燥制备了SiO2气凝胶。研究了老化时间、老化剂种类、干燥溶剂种类以及表面改性对SiO2气凝胶结构和性能的影响。结果表明:制得的SiO2气凝胶具有良好的疏水性,密度为0.082g/cm3,孔隙率为96.26%,比表面积达到585.4m2/g。采用扫描电镜(SEM)、傅里叶变换红外分析(FT-IR)、热重分析(TG)、差热分析(DTA)等对疏水型气凝胶的结构和性能进行了研究。     

Carbothermal transformation of a graphitic carbon nanofiber/silica aerogel composite to a SiC/silica nanocomposite

Carbon nanofiber/silica aerogel composites are prepared by sol-gel processing of surface-enhanced herringbone graphitic carbon nanofibers (GCNF) and Si(OMe)4, followed by supercritical CO2 drying. Heating the resulting GCNF/silica aerogel composites to 1650 degrees C under a partial pressure of Ar gas initiates carbothermal reaction between the silica aerogel matrix and the carbon nanofiber component to form SiC/silica nanocomposites. The SiC phase is present as nearly spherical nanoparticles, having an average diameter of ca. 8 nm. Formation of SiC is confirmed by powder XRD and by Raman spectroscopy.     

The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin films

This work reports on the effect of post-deposition rapid thermal annealing on the structural and electrical properties of deposited TiB₂ thin films. The TiB₂ thin films, thicknesses from 9 to 450 nm, were deposited by e-beam evaporation on high resistivity and thermally oxidized silicon wafers. The resistivity of as-deposited films varied from 1820 μΩ cm for the thinnest film to 267 μΩ cm for thicknesses greater than 100 nm. In the thickness range from 100 to 450 nm, the resistivity of TiB₂ films has a constant value of 267 μΩ cm.

A rapid thermal annealing (RTA) technique has been used to reduce the resistivity of deposited films. During vacuum annealing at 7 × 10⁻³ Pa, the film resistivity decreases from 267 μΩ cm at 200 °C to 16 μΩ cm at 1200 °C. Heating cycles during RTA were a sequence of 10 s. According to scanning tunneling microscopy analysis, the decrease in resistivity may be attributed to a grain growth through polycrystalline recrystallization, as well as to an increase in film density.

The grain size and mean surface roughness of annealed films increase with annealing temperature. At the same time, the conductivity of the annealed samples increases linearly with grain size. The obtained results show that RTA technique has a great potential for low resistivity TiB₂ formation.     

纳米多孔SiO2薄膜疏水性的研究进展

超低介电常数纳米多孔SiO2薄膜在未来超大规模集成电路(ULSI)中有着广阔的应用前景,但其疏水性能的好坏是决定其能否在ULSI中应用的重要因素之一.介绍了国内外有关纳米多孔SiO2薄膜疏水性的原理、工艺以及表征方法.     

Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205–300 °C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75–1.80. Calcium oxide films grown without Al₂O₃ capping layer occurred hygroscopic and converted to Ca(OH)₂ after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al₂O₃ capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 °C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO₂ growth cycles at 230 and 300 °C. HfCl₄ was used as a hafnium precursor. When grown at 230 °C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 °C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca₂Hf₇O₁₆ or Ca₆Hf₁₉O₄₄. At 300 °C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca₂Hf₇O₁₆. The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8–14.2.     

Dielectric properties of AlN films prepared by laser-induced chemical vapour deposition

The dielectric properties and electrical conductivity of AlN films deposited by laser-induced chemical vapour deposition (LCVD) are studied for a range of growth conditions. The static dielectric constant is 8.0 ± 0.2 over the frequency range 10²−10⁷ Hz and breakdown electric fields better than 10⁶ V cm⁻¹ are found for all films grown at temperatures above 130°C. The resistivity of the films grown under optimum conditions (substrate temperature above 170°C, NH₃/TMA flow rate ratio greater than 300 and a deposition pressure of 1–2 Torr) is about 10¹⁴ Ω cm and two conduction mechanisms can be identified. At low fields, F < 5 × 10⁵ V cm⁻¹ and conductivity is ohmic with a temperature dependence showing a thermal activation energy of 50–100 meV, compatible with the presumed shallow donor-like states. At high fields, F > 1 × 10⁶ V cm⁻¹, a Poole-Frenkel (field-induced emission) process dominates, with electrons activated from traps at about 0.7–1.2 eV below the conduction band edge. A trap in this depth region is well-known in AlN. At fields between 4 and 7 × 10⁵ V cm⁻¹ both conduction paths contribute significantly. The degradation of properties under non-ideal growth conditions of low temperature or low precursor V/III ratio is described.     

Microwave dielectric properties of W-doped Ba0.6Sr0.4TiO3 thin films grown on (001) MgO by pulsed laser deposition with a variable oxygen deposition pressure

The microwave dielectric properties of Ba_0.6Sr_0.4TiO₃ 1 mol% W-doped thin films deposited using pulsed laser deposition, are improved by a novel oxygen deposition profile. The thin films were deposited onto (001) MgO substrates at a temperature of 720 °C. A comparison is made between three different oxygen ambient growth conditions. These include growth at a single oxygen pressure (6.7 Pa) and growth at two oxygen pressures, one low (6.7 Pa) and one high (46.7 Pa). Films were deposited in a sequence that includes both a low to high and a high to low transition in the oxygen deposition pressure. Following deposition, all films were post-annealed in 1 atm of oxygen at 1000 °C for 6 h. The dielectric Q (defined as 1 / tanδ) and the dielectric constant, ε_r, were measured at room temperature, at 2 GHz, using gap capacitors fabricated on top of the dielectric films. The percent dielectric tuning (defined as (ε_r(0 V) − ε_r(40 V)) / ε_r(0 V) × 100) and figure of merit (FOM) (defined as percent dielectric tuning × Q(0 V)) were calculated. The film deposited using the two-stage growth conditions, 6.7 / 46.7 Pa oxygen, showed a maximum Q(0 V) value with high percent dielectric tuning and gave rise to a microwave FOM twice as large as the single stage growth condition. The improved dielectric properties are due to initial formation of a film with reduced interfacial strain, due to the formation of defects at the film/ substrate interface resulting in a high Q(0 V) value, followed by the reduction of oxygen vacancies which increases the dielectric constant and tuning.