电子回旋共振-微波等离子体化学气相沉积法制备a-C∶H(N)薄膜

采用电子回旋共振-微波等离子体化学气相沉积技术,使用CH4和N2混合气作为反应气体,在硅衬底上制备掺氮含氢非晶碳(a-C∶H(N))薄膜.紫外Raman光谱证实了薄膜的类金刚石特性;傅立叶变换红外光谱表明薄膜中存在CH和CN键结构.采用原子力显微镜(AFM)观察薄膜的微观表面形貌,结果表明薄膜表面光滑.论文详细叙述了薄膜制备工艺,对测试结果进行了分析讨论,也对这种薄膜在微电子机械系统中的潜在应用进行了探讨.     

ECR-CVD沉积a-C:F薄膜

采用电子回旋共振等离子体化学气相沉积（ECR－CVD）技术,用苯和三氟甲烷混合气体,制备了氟化非晶碳膜（a-C:F)。用红外吸收光谱（FTIR）和X射线光电子能谱（XPS）分析了a-C:F薄膜的结构。FTIR结果表明,氟主要以C－F,CF2的形式成键形成a-C:F薄膜,XPS结果进一步证明a-C:F膜中存在C－F,CF2键,获得了与FTIR相一致的结果。     

a-C:F薄膜结构与电学性能研究

采用电子回旋共振等离子体化学气相沉积（ECR-CVD）方法,以C4F8和CH4为源气体,在不同气体流量比R（R=[CH4]/（[CH4]＋[C4F8]））条件下沉积氟化非晶碳（a-C：F）薄膜.用原子力显微镜（AFM）分析了薄膜的表面形貌.用柯西（Cauchy）模型和Levenberg-Marquardt非线性迭代算法分析了薄膜的椭圆光谱.用X光电子能谱（XPS）和傅里叶变换红外光谱（FTIR）技术分析了薄膜的化学成分.随着气体流量比R的增大a-C：F薄膜C-C键结构增多,薄膜C/F比增大.a-C：F薄膜的介电常数取决于电子极化并随R的增大而上升.a-C：F薄膜导电行为在低场强区域呈现欧姆特性,在高场强区域符合Poole-Frankel机制.随着C-C含量的增大,π价带态和π＊导带态之间的带隙减小,电荷陷阱深度减小,陷阱中的电子在场增强热激发作用下更容易进入导带,导致薄膜漏电流增加.     

DBD-PECVD法制备CN薄膜的结构及性能研究

使用自行设计的真空系统,采用介质阻挡放电等离子体增强化学气相沉积(DBD-PECVD)法,分别以CH4/N2、C2H2/N2、C2H4/N2混合气体作为反应气体,在单晶硅片上成功制备了CN薄膜.FTIR结果证实了薄膜中碳氮原子结合成化学键,Raman结果说明薄膜中含有类金刚石结构,AFM结果表明薄膜粗糙度随放电气压的升高而逐渐增大.三种混合气体沉积的CN薄膜,以CH4/N2的沉积速度最慢,薄膜表面粗糙度最小,含H量最少;C2H2/N2的沉积速度最快,薄膜表面粗糙度最大.     

源气体流量比对a_C:F:N薄膜的影响

以CF4、CH4和N2的混合气体为源气体,利用rf-PECVD沉积技术制备了氮掺杂氟化非晶碳(a_C:F:N)薄膜,研究了源气体流量比对a_C:F:N薄膜沉积速率和结构的影响.用椭圆偏振光谱测试仪测量了薄膜厚度,结合沉积时间计算了薄膜的沉积速率(在18～21nm/min之间),随流量比增大,薄膜的沉积速率先升高后降低.FTIR光谱分析表明,随流量比增大,薄膜中含F量降低,交联结构增强.Raman光谱分析发现,薄膜中的碳原子由sp2和sp3两种组态的混合结构组成,并进一步证明,随流量比增大,薄膜中sp2键含量增加,交联程度增强.     

ECR-CVD制备氟化非晶碳低k介质薄膜

采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法,以C4F8和CH4为源气体在不同气体流量比R(R=[CH4]/{[CH4] [C4F8]})条件下成功地沉积了氟化非晶碳(a-C:F)低介电常数(低k)材料.采用X光电子能谱和椭圆光谱方法分析了a-C:F薄膜的化学组分和光学性质.沉积的a-C:F薄膜介电常数约为2.1～2.4,热稳定性优于350℃.随着气体流量比的增大,沉积a-C:F薄膜中的碳含量增大,CF、CF2、CF3含量减少,C-C交链成分增加,从而使得π-π(*)吸收增强,并引起薄膜光学带隙下降.氮气气氛下350℃温度退火后应力释放引起a-C:F薄膜厚度变化,变化量小于4%.450℃温度退火后,由于热分解作用薄膜厚度变化量在30%左右.     

电子回旋共振—微波等离子体化学气相沉积法制备a-C:H(N)薄膜

采用电子回旋共振 -微波等离子体化学气相沉积技术 ,使用 CH4 和 N2 混合气作为反应气体 ,在硅衬底上制备掺氮含氢非晶碳 (a- C∶ H(N) )薄膜。紫外 Ram an光谱证实了薄膜的类金刚石特性 ;傅立叶变换红外光谱表明薄膜中存在 CH和 CN键结构。采用原子力显微镜 (AFM)观察薄膜的微观表面形貌 ,结果表明薄膜表面光滑。论文详细叙述了薄膜制备工艺 ,对测试结果进行了分析讨论 ,也对这种薄膜在微电子机械系统中的潜在应用进行了探讨     

氮气退火对氟化非晶碳膜结构和电学性能的影响

采用电子回旋共振等离子体化学气相淀积(ECR-CVD)方法以C4F8和CH4为源气体制备了氟化非晶碳(a-C:F)膜并在氮气气氛中对a-C:F膜进行了退火处理研究.X光电子能谱(XPS)化学结构分析表明,退火后a-C:F膜中CF3,CF2和CF含量减少,而C-CFx(x=1～3)交联结构增多.电学性能研究指出,退火后a-C:F薄膜的介电常数由于电子极化和薄膜密度的增大而上升,Al/a-C:F/Si结构的阻滞效应由于界面态密度下降而减弱,同时a-C:F膜的π-π*带隙和电荷陷阱能量减小并导致薄膜漏电流增大.     

氮掺杂氟化非晶碳薄膜光学性质的研究

用射频等离子体增强化学气相沉积(RF-PECVD)法制备氮掺杂氟化非晶碳(a-C:F:N)薄膜.用紫外-可见分光光谱仪、椭偏仪、傅立叶变换红外光谱仪对薄膜进行了检测.结果表明:随源气体中氮气含量的增加,光学带隙先减小后升高,折射率变化情况与之相反.在其它条件相同的情况下,升高沉积温度使得薄膜的光学带隙和折射率降低.光学带隙的大小与sp2键含量密切相关,sp2键浓度越大,薄膜的光学带隙越小.     

电子回旋共振-微波等离子体化学气相沉积法制备a—C：H（N）薄膜

采用电子回旋共振-微波等离子体化学气相沉积技术，使用CH4和N2混合气作为反应气体，在硅衬底上制备掺氮含氢非晶碳(a—C：H(N))薄膜。紫外Raman光谱证实了薄膜的类金刚石特性；傅立叶变换红外光谱表明薄膜中存在CH和CN键结构。采用原子力显微镜(AFM)观察薄膜的微观表面形貌，结果表明薄膜表面光滑。论文详细叙述了薄膜制备工艺，对测试结果进行了分析讨论，也对这种薄膜在微电子机械系统中的潜在应用进行了探讨。     

掺氮类金刚石薄膜激光退火的Raman光谱分析

采用显微拉曼光谱研究的掺氮的类金刚石薄膜,该薄膜分别经过能量密度为300,750和1500W/mm^2氩离子激光的退火处理。分析结果表明氮原子在类金刚石薄膜中形成了C-N键制约了C-H键的形成。由于C-N键的键能比C-H键的键能大得多。因此在激光退火过程中C-N键不易分解,所以随着氮含量的增加,类金刚石薄膜的激光退火后石墨化程度明显降低,具有比较好的热稳定性,而非掺氮的类金刚石薄膜由于C-H键含量比较高,因此激光退火后容易石墨化。     

Deposition of polymeric nitrogenated amorphous carbon films (a-C:H:N) using electron cyclotron resonance CVD

In this paper the deposition of polymeric nitrogenated amorphous carbon (a-C:H:N) films from a mixture of hydrogen, methane and nitrogen, using the electron cyclotron resonance chemical vapor deposition (ECR-CVD) system is reported. Rutherford backscattering spectroscopy (RBS) and elastic recoil detection analysis (ERDA) measurements were used to determine the actual amount of nitrogen, carbon and hydrogen in the films. The results showed that there is insignificant change in the atomic concentration of C but a slight decrease in the atomic concentration of H with increasing N incorporation. A slight decrease in the amount of bonded H and an increase in the C=N bond was also observed as deduced from infrared (IR) absorption measurements. The optical gap was found to decrease and the Urbach band tail width increase at larger N₂ flow ratio. The conductivity increased by three orders of magnitude compared to that of films prepared in the absence of N₂. The results suggest that the observed C=N double bond effectively bridges the aromatic rings resulting in a delocalization of carriers.     

a-C:N膜的制备及结构分析

采用射频溅射法在锗衬底上沉积无定形碳氮膜 (a- C:N) ,用 X射线光电子谱 (XPS)、傅立叶变换红外光谱 (FT- IR)和喇曼光谱 (RS)分析了膜的成分与结构。结果表明 ,氮是以化学键的形式存在于膜中 ,且有三种不同的 C- N键合状态。随着反应气体中氮气分压的增加 ,a- C:N膜中氮浓度增加 ,C≡N键的含量增加。     

C60与高聚物复合膜的光电导性能

在ITO导电玻璃上制备了聚乙烯基咔唑（PVK）\C60复合膜与分散红I（PDRO）\C60复合膜,在250W的红外灯照射下,发现PDRO\C60复合膜的光电导性能明显优于PVK\C60复合膜,并对该现象作了初步解释。     

a—C：H（N）薄膜的生物相容性

采用射频－直流等离子增强化学气相沉积法用Ｃ２Ｈ２与Ｎ２的混合气体制备了ａ－Ｃ：Ｈ（Ｎ）薄膜,用动物急性实验法和细胞毒性实验法研究了ａ－Ｃ：Ｈ（Ｎ）薄膜的生物相容性。结果表明,ａ－Ｃ：Ｈ（Ｎ）薄膜的生物相容性优于常用生物材料纯Ｔｉ,且能为细胞的生长提供合适的生长表面。     

磁控溅射碳化硅薄膜生长的热力学讨论

提出一个用磁控溅射制备碳化硅薄膜的简化热力学模型。首先选出构成β-C3N4,P-C3N4或-（C2N2）n-的最可能表面反应,然后通过求解这个热力学模型计算了生长参量空间中不同类型薄膜淀积区域的分界线。这些结果与一些实验结果很好地符合。     

Composite Ag/C:H:N films prepared by planar magnetron deposition

Composite Ag/C:H:N films were deposited by means of an unbalanced magnetron operated in a gas mixture of nitrogen and n-hexane. Composition of the films was controlled by electric power delivered to the magnetron and by ratio of nitrogen and n-hexane in the working gas mixture. The films were characterized using transmission electron microscopy, by the absorption spectra in visible and near infrared regions and by Fourier transform infrared spectroscopy. Immediately after film deposition and without breaking vacuum (in situ) corresponding vibration infrared spectra were scanned and their evolution during ageing of the films was monitored. Wettability as determined from water contact angle was improved with raising nitrogen contents, i.e. with increasing the electric power and the ratio of nitrogen/n-hexane in the working gas mixture. The increased wettability is likely caused by presence of NH_x groups in Ag/C:H:N films. The incorporation of nitrogen effectively prevents the formation of carboxylate groups on the silver inclusions surfaces during the aging in the open air. In addition, the oxidation mechanism of the polymer matrix is modified.     

富勒烯（C60）与类金刚石碳复合膜的Debye模型的模拟计算

由C60和类金刚石碳膜（DLC）组成的多层复合膜可在Si、玻璃和其它衬底上通过真空升华沉积和随后以CH4和H2作为反应剂用射频化学气相沉积（RFCVD）的方法制备,这种膜的若干特征可由拉曼谱（Raman)表征。复合膜电阻与介电常数由低频（LF）阻抗分析仪进行研究从而得到膜电阻、介电常数和频率间的关系。这些结果表明：在各种频率下的此类复合膜的电阻怀纯C60膜基本一致。但是纯C60膜随频率变化的电容率与复合膜明显不同,这些现象与结果可通过电介质的德拜模型和介质松弛理论进行分析与讨论。根据相应的Debye模型方程式,实验测得的介电常数和频率间的关系经计算机拟合,得到了复合膜的松弛时间,介电常数等。拟合结果基本上与实验数据一致。     

Growth of carbon nanotubes on cobalt catalyst film using electron cyclotron resonance chemical vapour deposition without thermal heating

This paper demonstrates that carbon nanotubes (CNTs) can be synthesized on a cobalt coated silicon substrate using electron cyclotron chemical vapour deposition and without intentionally heating the substrate. With the mixed gases of C(3)H(8)/N(2), CNTs with a multi-walled structure and a diameter up to 70?nm have been observed. Results show that the diameter of the CNTs increases with the thickness of the cobalt catalyst film and the amount of nitrogen incorporated in the CNT films considerably influences the structures of the CNTs. Vertically aligned CNTs can be fabricated with a microwave power as low as 300?W and the flow rate ratio of C(3)H(8)/N(2) = 20/20?sccm. The CNTs exhibit a turn-on field of 0.2?V?μm(-1) determined at the emission current density of 10?μA?cm(-2).     

Structure, adhesive strength and electrochemical performance of nitrogen doped diamond-like carbon thin films deposited via DC magnetron sputtering

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on p-Si (100) substrates by DC magnetron sputtering with different nitrogen flow rates at a substrate temperature of about 100 degrees C. The chemical bonding structure of the films was characterized by X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy. The adhesive strength and surface morphology of the films were studied using micro-scratch tester and scanning electron microscope (SEM), respectively. The electrochemical performance of the films was evaluated by potentiodynamic polarization testing and linear sweep voltammetry. The electrolytes used for the electrochemical tests were deaerated and unstirred 0.47 M KCl aqueous solution for potentiodynamic polarization testing and 0.2 M KOH and 0.1 M KCl solutions for voltammetric analysis. It was found that the DLC:N films could well passivate the underlying substrates though the corrosion resistance of the films decreased with increased nitrogen content in the films. The DLC:N films showed wide potential windows in the KOH solution, in which the detection ability of the DLC:N films to trace lead of about 1 x 10(-3) M Pb(2+) was also tested.