晶界氧吸附对SrTiO3基压敏陶瓷的作用

研究了SrTiO3基压敏陶瓷热处理过程中氧的作用。发现SrTiO3基压敏陶瓷的压敏电压U10mA与试样的厚度无关，且随着热处理温度的升高而增大。进一步的试验表明SrTiO3基压敏陶瓷的压敏特性主要受试样表面高阻层的控制。X射线光电子能谱（XPS）的Mn2p和O1s谱图表明，表面高阻层是氧在热处理过程中通过晶界的扩散和化学吸附产生的。因此，氧在晶界处的化学吸附是SrTiO3基陶瓷压敏特性产生的根源。     

高能球磨掺杂氧化物粉体和压敏陶瓷粉体对氧化锌压敏陶瓷性能的影响(英文)

采用高能球磨掺杂氧化物粉体和压敏陶瓷粉体2种不同制备技术制备ZnO-Bi2O3压敏陶瓷,通过扫描电镜和X-射线衍射对其显微组织和相成分进行分析,探讨不同高能球磨制备技术对氧化锌压敏陶瓷电性能和显微组织的影响。结果表明:压敏陶瓷粉体高能球磨是制备高性能氧化锌压敏陶瓷的一种优异的技术,在1000°C下烧结3h,压敏陶瓷的电位梯度为617V/mm,非线性系数为57;压敏陶瓷的致密度高达95%,显微组织均匀、致密;高能球磨压敏陶瓷粉体可细化晶粒,增强烧结驱动力,加速烧结过程,降低烧结温度。     

Influence of CaF2 on the structure and dielectric properties of Ag（Nb0.8Ta0.2）O3 ceramics

Ag(Nb0.8Ta0.2)O3 ceramics were prepared by the traditional solid-state reaction method. The effect of CaF2 addition on the structure and di-electric properties of Ag(Nb0.8Ta0.2)O3 ceramics was investigated. The addition of CaF2 led the ceramics to a larger grain size and distortion of lattice. With the addition of 4.5 wt.% CaF2, the permittivity of the ceramics increased from 442 to 1028, the dielectric loss decreased sharply from 6.12 × 10-3 to 8.6 × 10-4, and the temperature coefficient of capacitance decreased from 1834 ppm/°C to-50 ppm/°C (at 1 MHz). These results indicated that the high permittivity was related with a large grain size, a low grain boundary density, and the weak Ta-O or Nb-O bond strength caused by the addition of CaF2.     

Effects of cooling rate on the microstructure and electrical properties of Dy2O3-doped ZnO-based varistor ceramics

The microstructure, electrical properties, and density of Dy2O3-doped ZnO-based varistor ceramics, prepared using high-energy ball milling （HEBM） and sintered at 800℃, were investigated by increasing the cooling rate in the order of H （slow cooling in furnace） → L （cooling in furnace） → K （cooling in air）. With the increase in cooling rate, the grain size and density decreased, the breakdown voltage （VImA/mm） increased, and the nonlinear coefficient （α） and leakage current （IL） exhibited extremum. The sample with the cooling type L showed the best properties with the breakdown voltage of 2650 V/ram, o：of 20.3, IL of 5.2 laA, and density of 5.42 g/cm^3. The barrier height （ФB）, donor concentration （Nd）, density of the interface states （Nd）, and barrier width （ω） all exhibited extremum during the alteration in cooling rate. The different relative amount of Bi-rich phase and its distribution as well as the characteristic parameters of grain boundary, resulting from the alteration of cooling rate, led to the changes in the properties of varistor ceramics.     

Effects of B2O3-SiO2 doping on electrical properties of Ba0. 65 Sr0. 35 TiO3 ceramics

Ba0. 65 Sr0. 35 TiOa ceramics doped with B2O3-SiO2 glass composition were prepared by using conventional solid-state reaction method. The effects of glass dopant on the dielectric and ferroelectric properties were investigated. The results show that the dielectric constant decreases while the dielectric loss increases after doping. And as the glass content increases the dielectric constant decreases while the dielectric loss changes slightly. From the complex impedance analysis the resistance and the relaxation time of the grain and the grain boundary can be calculated.Comparing the P--E hysteresis loop of undoped Ba0.65 Sr0.35 TiO3 ceramics with that of B2O3-SiO2 doped Ba0.65 Sr0.35 TiO3 ceramics, it can be seen that the remanent polarization decreases when the B2O3-SiO2 content is lower than 8% (molar fraction), and the coercive field increases with the increase of B2O3-SiO2 content.     

钛酸锶压敏陶瓷及其性能影响因素

为了提高SrTi03压敏陶瓷的性能，对其影响性能的因素进行了论述，指出主要影响因素是配方体系及制造工艺中的绕结工艺，并指出改善SrTi03综合性能的途径是进一步提高瓷料配方的适应能力并完善制造工艺。     

Constitutional Design and Dielectric Properties of BST Graded Ceramics

The effect of B203 dopant and SrTiO3 (ST) content on lattice parameters and ferro-paraelectric phase transition temperature (i.e. Curie point) of Ba1-xSrxTiO3 (BST, x=0～0.4) ceramics was investigated, and then BST graded ceramics with controllable transition temperature zone were fabricated and characterized for their dielectric properties. The results show that with the increase of ST content, c/a ratio and Curie point of both doped and undoped ceramics decreased linearly but with different rate of change, resulting from different ionic radiuses of Ba^2 , Sr^2 and B^3 . Moreover, both c/a ratio and Curie point of doped BST increased slightly in comparison with that of undoped ones while the Curie point changed scarcely with dopant amount rising, which perhaps means that for BST grains with different ST content, B2O3 solubility was different but limited and most of boron (B) did not incorporate into BST grains. Through controlling composition,transition temperature of graded ceramics can be designed. For doped graded ceramics sintered at 1250℃, its dielectric properties was much better than that of undoped one sintered at 1400℃, and Curie peak of both samples was broadened effectively via graded structure.     

Nd2O3对氧化锌压敏阀片压敏电位梯度与显微组织的影响

研究了微量Nd2O3添加剂对氧化锌压敏阀片的压敏电位梯度的影响，并对其微观组织进行了分析研究，从理论上探讨了Nd2O3影响氧化锌压敏阀片压敏电位梯度与组织的机理。研究结果表明，在0m01％～0．04mol％成分范围内，随着Nd2O3含量的增加，氧化锌压敏阀片的压敏电位梯度明显提高；当Nd2O3含量超过0．04mol%时，随其含量的增加，氧化锌压敏阀片的压敏电位梯度又呈降低趋势。其原因是Nd2O3加入到氧化锌压敏阀片中，使晶粒尺寸减小所致。     

Co掺杂SrTiO_3阳极材料性能研究

通过高温固相合成法制备了SrCoxTi1-xO3,并通过X射线衍射仪、扫描电镜、密度和电导率的测量,系统地研究了掺杂量对Co掺杂的SrTiO3性能的影响,研究了Co掺杂的SrTiO3与电解质材料(YSZ)的兼容性。研究表明,在1500℃还原气氛(5%H2+95%Ar)下,Co在SrTiO3中的掺杂量在10mol%以下。SrCoxTi1-xO3的电导率呈现离子电导的特征,并随着Co掺杂量的增加而减小。SrCo0.05Ti0.95O3与YSZ在1100℃以下可以稳定共存。     

溶胶凝胶法制备Zn-Si-B-O掺杂钛酸锶钡(Ba0.60Sr0.40TiO3)玻璃陶瓷的制备及其介电性能研究

采用溶胶凝胶方法制备Zn-Si-B-O掺杂Ba0.6Sr0.4TiO3玻璃陶瓷.研究Zn-Si-B-O玻璃组分从5%～50%(摩尔分数,下同)掺杂Ba0.6Sr0.4TiO3玻璃陶瓷的相结构与介电性能.分析Zn-Si-B-O玻璃组分对Ba0.6 Sr0.4TiO3玻璃陶瓷结构及其介电性能的影响.结果表明:Zn-Si-B-O掺杂Ba0.6Sr0.4TiO3玻璃陶瓷的烧结温度低于传统工艺.Zn-Si-B-O掺杂Ba0.6Sr0.4TiO3玻璃陶瓷的相结构为立方钙钛矿相结构(≤40%),不存在第二相.Zn-Si-B-O掺杂Ba 0.6 Sr 0.4TiO3玻璃陶瓷的介电常数ε随着烧结温度升高而增大,介电损耗tanδ随测试温度的增加而降低.Zn-Si-B-O玻璃相聚集在晶粒边界区域,其作用稀释降低了玻璃陶瓷的介电常数,阻止晶粒生长,并降低了介电损耗tanδ.随着晶粒平均尺寸的减小,Zn-Si-B-O掺杂Ba 0.6Sr 0.4TiO3玻璃陶瓷样品的介电峰变低,平坦,宽化的现象.     

Microstructure and electrical properties of Lu2O3-doped ZnO-Bi2O3-based varistor ceramics

Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics samples were characterized by X-ray diffractometry(XRD)and scanning electron microscopy(SEM);at the same time,the electrical properties and V-I characteristics of the varistor ceramics samples were investigated by a DC parameter instrument for varistors.The results show that the ZnO-Bi2O3-based varistor ceramics with 0.3%Lu2O3(molar fraction)sintered at 950°C exhibit comparatively ideal comprehensive electrical properties.The XRD analysis of the samples shows the presence of ZnO,Bi-rich,spinel Zn7Sb2O12 and Lu2O3-based phases.     

Dielectric relaxation behaviors of pure and Pr6O11-doped CaCu3Ti4O12 ceramics in high temperature range

Pure and Pr₆O₁₁-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics were prepared by conventional solid-state reaction method. The compositions and structures were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The influences of Pr-ion concentration on dielectric properties of CCTO were measured in the ranges of 60 Hz-3 MHz and 290-490 K. The third phase of Ca₂CuO₃ was observed from the XRD of CCTO ceramics. From SEM, the grain size was decreased obviously with high valence Pr-ion (mixing valence of Pr³⁺ and Pr⁴⁺) substituting Ca²⁺. The room temperature dielectric constant of Pr-doped CCTO ceramics, sintered at 1323 K, was an order of magnitude lower than the pure CCTO ceramics due to the grain size decreasing and Schottky potential increasing. The dielectric spectra of Pr-doped CCTO were flatter than that of pure CCTO. The loss tangent of Pr-doped CCTO ceramics was less than 0.20 in 2 × 10²-10⁵ Hz region below 440 K. The complex impedance spectra of pure and Pr-doped CCTOs were fitted by ZView. From low to high frequency, three semicircles were observed corresponding to three different conducting regions: electrode interface, grain boundary and grain. By fitting the resistors R and capacitors C, the activation energies of grain boundary and electrode contact were calculated. All doped CCTOs showed higher activation energies of grain boundary and electrode than those of pure CCTO ceramics, which were concordant with the decreasing of dielectric constant after Pr₆O₁₁ doping.     

溶胶-凝胶法制备Ni掺杂CaCu3Ti4O12陶瓷的显微组织及电性能（英文）

采用溶胶凝胶法制备掺杂不同含量NiO(CaCu3NixTi4O12+x,x=0, 0.1, 0.2, 0.3)的CCTO陶瓷,通过扫描电镜和 X 射线衍射对其显微组织和相成分进行了分析,并研究了NiO掺杂对CCTO介电和压敏性能的影响。研究结果表明:Ni对CCTO陶瓷的相位成分没有影响,与用传统固相法制得的样品相比,用溶胶-凝胶法制成的样品具有更小的晶粒尺寸。从介电测量结果来看,当 x=0.2 时,样品具有最高的介电常数和最低的介电损耗。当x=0.3时,得到最低的漏电流,最小值为 0.295,同时,具有最高的阀值电压与非线性系数,最大值分别为1326V/mm和3.1。     

Microstructure and electrical properties of Y(NO3)3·6H2O-doped ZnO-Bi2O3-based varistor ceramics

Y(NO₃)₃·6H₂O-doped ZnO-Bi₂O₃-based varistor ceramics were prepared using a solid reaction route. The microstructure, electrical properties, degradation coefficient (D_V), and dielectric characteristics of varistor ceramics were studied in this paper. With increasing amounts of Y(NO₃)₃·6H₂O in the starting composition, Y-containing Bi-rich, Y₂O₃, and Sb₂O₄ phases were formed, and the average grain size decreased. Results also showed that with the addition of 0.16 mol% Y(NO₃)₃·6H₂O, Y(NO₃)₃·6H₂O -doped ZnO-based varistor ceramics exhibit comparatively better comprehensive electrical properties, such as a threshold voltage of 425 V/mm, a nonlinear coefficient of 73.9, a leakage current of 1.78 μA, and a degradation coefficient of 1.7. The dielectric characteristics and lightning surge test also received the same additional content of Y(NO₃)₃·6H₂O. The results confirmed that doping with rare earth nitrates instead of rare earth oxides is very promising route in preparing high-performance ZnO-Bi₂O₃-based varistor ceramics.     

Li2CO3掺杂BaTiO3无铅压电陶瓷的低温烧结

以Li2CO3作为烧结助剂,采用传统固相烧结法制备BaTiO3陶瓷。研究了烧结温度(1000~1150℃)和Li2CO3添加质量分数(0%~5%)对BaTiO3陶瓷结构和电学性能的影响。结果表明:Li2CO3的掺入有效地促进了陶瓷的烧结,使BaTiO3的烧结温度从1300℃以上降低到1050℃。X射线衍射结果表明:未掺Li2CO3的BaTiO3陶瓷样品为四方相结构,掺Li2CO3的BaTiO3陶瓷样品为正交相结构。Li2CO3掺量为1%的陶瓷样品具有较高的致密度,且在1050℃时获得最大值,其相对密度可达94%。当烧结温度为1100℃时,BaTiO3陶瓷的压电常数d33获得最大值,且d33随着Li2CO3掺量的增加而降低。其中Li2CO3掺量为1%时陶瓷具有较好的电性能:d33=200pC/N,εr=1322,TC=115℃。     

Stabilizing nanocrystalline materials with dopants

The enhancement of material properties caused by extremely small grain sizes in metals and ceramics is attractive for many technological applications including protective coatings, electronic interconnects and microelectromechanical systems (MEMS) devices. However, the large driving force for grain growth caused by the abundance of grain boundaries remains a critical complication in the synthesis and functionality of nanocrystalline materials. Here we present atomistic simulations that illuminate the stabilizing effect of interfacially segregated, oversized dopants in face-centered cubic (fcc) copper. Using a bicrystal configuration, the calculated grain boundary energy is reduced to zero with systematically increasing dopant coverage and atomic radius mismatch. We then extend this result to a nanocrystalline network and determine the critical dopant concentration required to eliminate grain growth in bulk and thin film structures. The results of this investigation are intended to guide future experimental efforts to design appropriately doped, stable nanocrystalline materials.     

Grain size dependent grain boundary defect structure: case of doped zirconia

The electrical properties of 3 mol% Y₂O₃ doped ZrO₂ were measured by impedance spectroscopy as a function of grain size, and the microstructure studied by SEM and HREM. In spite of the very clean grain boundaries, the grain boundary conductivity was still found to be ∼2 orders of magnitude lower than the bulk conductivity, while it increased with decreasing grain size. The low grain boundary conductivity, according to the Schottky barrier model, is due to the depletion of oxygen vacancies in the grain boundary space charge layers. Within this framework, the grain boundary space charge potential and the concentration of oxygen vacancies in the space charge layers were calculated; it was found that the space charge potential decreased, but the oxygen vacancy concentration increased with decreasing grain size. Analyses of literature results for 8.2 mol% Y₂O₃ and 15 mol% CaO doped ZrO₂, respectively, revealed similar phenomena.     

Effect of Heat Treatments on Microstructures and Tensile Properties of Cu–3 wt%Ag–0.5 wt%Zr Alloy

The microstructures and tensile properties of Cu–3 wt%Ag–0.5 wt%Zr alloy sheets under different aging treatments are investigated in this research. As one kind of precipitate, Ag nanoparticles with coherent orientation relationship with matrix precipitate. However, after the peak-age point, most of Ag nanoparticles grow into short rod shape with the interface translating to semi-coherent, which leads to the lower strength of over-aging sample. The yield strength is estimated by considering solid solute, grain boundary and precipitation strengthening mechanisms. The result shows that the Ag precipitates provide the main strengthening role. Then a constitutive equation representing the evolution of dislocation density with plastic strain is built by considering work-hardening behavior coming from shearable and non-shearable precipitates which is mainly the particles containing Zr. The flow stress contributed by shearable particle hardening is higher than that of non-shearable one. Due to the coarsening of grain boundary precipitates and low rate of damage accumulation of these non-shearable particles, the micro-cracks nucleate easily at grain boundary which leads to intergranular fracture.     

掺镧TZM合金的组织结构

在TZM钼合金的基础上掺杂稀土氧化镧,用粉末冶金法生产出掺镧TZM合金。采用SEM、EDS对不同配方稀土钼合金的微观结构进行了分析。结果表明,掺镧可显著降低合金的晶粒尺寸,合金晶粒尺寸随着掺镧量的增加而减小;合金内第二相弥散颗粒不仅存在于晶界,也存在于晶内,可同时强化晶界和晶粒;间隙元素C、O会在晶界的第二相上富集,Ti在合金中会形成粗大的Ti-Mo固溶体,而C会和Mo形成粗大的Mo2C。稀土氧化镧的掺杂能促进TZM合金弥散分布的细小第二相的析出。     

Grain boundary segregation and fracture behavior of boron containing Fe-Mn-Ni-(Mo,w) age hardening alloys

The effects of boron addition on the grain boundary segregation and fracture behavior of tempered Fe-Mn-Ni-Mo and Fe-Ni-Mn-W steels were investigated. High segregation of Mn to prior austenitie grain boundaries resulted in severe grain boundary embrittlement in W-bearing alloys. Boron addition did not significantly affect the grain boundary segregation of other alloying elements. Nevertheless, improvement of tensile properties is observed in 16 ppm boron doped W-bearing steel. Segregation of boron itself to grain boundaries is believed to affect the grain boundary strength of this alloy. Lower Mn segregation in Mo containing steels resulted in the ductile fracture when tempered at 480°C.