氨气和氮气气氛下热处理对ITO薄膜光电性能的影响

利用射频磁控溅射在室温玻璃衬底上制备了氧化铟锡(ITO)薄膜,并分别在氨气、氮气和空气气氛下对薄膜进行了热处理.利用X射线衍射、霍尔效应、UV-VIS-NIR分光光度计等测试手段对薄膜样品进行表征,研究了不同热处理气氛及温度对ITO薄膜光电特性的影响.结果发现在不同气氛下热处理均能明显提高ITO薄膜在可见光区的透过率,氨气气氛下更有利于薄膜导电特性的改善.     

锡掺杂量对胶体法制备ITO薄膜光电性能的影响

以金属铟和锡盐为原料采用胶体法制备Sn掺杂三氧化二铟(ITO)前驱物浆料,通过提拉法在镀有SiO2薄层的浮法玻璃基片上制备透明导电ITO薄膜.研究了不同Sn掺杂量5%～20%(质量分数,下同)对ITO薄膜光电性能的影响.用分光光度计和四探针电阻仪检测ITO薄膜,样品的光电性能,并对其进行X射线衍射分析.结果表明:当Sn掺杂量为10%时薄膜的方电阻最小,为153 Ω/□,不同Sn掺杂的ITO膜均为单一的立方铁锰矿结构;薄膜在可见光区平均透过率≥82%.基于对不同Sn掺杂量的ITO薄膜XRD数据分析,研究了ITO薄膜的结构特性,并讨论了薄膜的导电机制.结果表明:胶体法制备的ITO薄膜的自由载流子主要来源于氧缺位提供的导电电子.通过对ITO薄膜吸收系数的线性拟合表明,薄膜中自由电子由价带至导带的跃迁属于直接跃迁,且光学能隙值随Sn掺杂量的增加呈先增加后减小的趋势,在Sn掺杂量为15%时为最大值3.65 eV.     

柔性衬底ITO透明导电薄膜的光电性能研究

利用直流磁控溅射方法在柔性聚酯薄膜衬底上制备了氧化铟锡（ITO）透明导电薄膜，采用X射线衍射、紫外．可见分光光度计、四探针电阻测量仪等测试手段对薄膜样品进行表征，研究了氧含量、薄膜厚度、村底负偏压对ITO薄膜的晶体结构和光电性能的影响，优化了柔性衬底ITO薄膜的制备工艺条件。制得样品的最佳可见光平均透过率为85．6％，方块电阻为6Ω／口。     

基于无颗粒银墨水制备柔性透明导电薄膜

以酒石酸银作为前驱体，1,2-丙二胺为络合剂，乙醇为溶剂制备无颗粒酒石酸银导电墨水。以丙烯酸乳液为原料制备模板，利用模板法和旋涂工艺法，在PET基材上制备透明导电银网格薄膜。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、傅里叶红外光谱仪(FTIR)等方法对制备的导电墨水和透明导电银网格薄膜进行表征。结果表明，该方法实现了银网格完全嵌入在裂纹模板凹槽中，通过调控模板的线宽大小及网孔数量可获得透过率为82%、方阻为28 Ω/sq的银网格透明导电薄膜。该导电薄膜的薄膜电阻经过100次弯曲后没有明显的变化，可以有效克服ITO薄膜柔性差的缺点。     

溶胶-凝胶提拉法制备ITO透明导电膜

采用溶胶-凝胶(sol-gel)法,利用自制的提拉实验设备于石英玻璃片上制得了ITO(indium tin oxide)透明导电薄膜,并就薄膜的物相结构、微观组织、导电性能及透光性等进行了研究分析.结果表明:薄膜的方电阻和透光性与提拉速度、提拉次数、热处理温度、冷却方式及Sn原子掺杂量等因素有关.当Sn原子掺杂量为12.5%(质量分数)、提拉速度为80 mm/min、经5次提拉且每次提拉后经550℃热处理(炉外空冷)而最终制得的ITO薄膜的方电阻为110 Ω/□,透光率可达90%以上.用溶胶-凝胶法制备ITO薄膜具有工艺简单可控,成本较低且宜于大面积成膜等优点.     

透明导电氧化锌薄膜材料制备技术的评价

综述透明导电ZnO薄膜制备技术的发展状况.ZnO薄膜材料具有高稳定、成本低等特点,极具市场发展潜力,尤其柔性村底的应用,有望在太阳能电池领域取代传统使用的ITO膜.     

射频磁控溅射沉积ITO薄膜性能及导电机理

将In2O3和SnO2粉末按质量比1：1热压烧结制成靶材，采用射频磁控溅射制备了高性能的ITO薄膜。实验结果表明：氩气压强对薄膜的电阻率、可见光透射率TVITL有着重要的影响，其最佳值为0．2Pa。ITO膜的方阻、TVIL和颜色与膜厚有着密切的关系。提高基体温度ts可以改善薄膜的性能，在ts为200℃时，ITO薄膜的1k达到90％以上（含玻璃基体），方阻为13．1Ω／□。根据薄膜生长的3个阶段理论，建立了薄膜厚度与电阻率的关系：在ITO薄膜生长过程中，依次出现热发射和隧道效应、逾漏机制以及Cottey模型导电机理。由实验结果求得了临界厚度吐约为48-54nm，AFM表征结果进一步表明ITO薄膜随着厚度增加表现出不同的导电机理和尺寸效应。     

透明导电氧化物薄膜的研究进展

综述了TCO薄膜的研究进展和应用前景。ITO薄膜是目前应用最广泛的薄膜，AZO薄膜是研究的热点，具有替代ITO薄膜的潜能。TCO薄膜因具有优异的光电性能而被应用在各种光电器件中，例如，平面液晶显示器，太阳能电池等。随着TCO薄膜制备方法的不断改进、成熟以及聚合物基TCO薄膜的开发，TCO薄膜将具有更广阔的应用和发展空间。     

Effects of Electrodes on the Filament Formation in HfO2- Based Resistive Random Access Memory

研究了Cu/HfO2/ITO和TiN/HfO2/ITO 2种结构阻变存储器件的电阻转变特性。2种结构均表现出稳定的、可重复的双极电阻转变行为。Cu/HfO2/ITO器件的电阻转变机制是Cu导电细丝的形成,而对于TiN/HfO2/ITO器件,在TiN顶电极和HfO2薄膜中会形成界面层,因此氧空位导电细丝的形成与断裂,是其主要的电阻转变机制。     

胶体法制备透明导电ITO薄膜

以锡盐和金属铟为原料采用胶体法制备ITO前驱物浆料，通过提拉法在镀有SiO2薄层的浮法玻璃基片上制备透明导电ITO薄膜。用TEM测定ITO前驱物浆料颗粒大小；用XRD、SEM、AES分别对ITO薄膜的结构和表面形貌进行表征；用分光光度计和四探针电阻仪检测ITO薄膜光电性能。结果表明：ITO前驱物浆料的颗粒粒径为2nm～15nm，具有较好的分散性和稳定性：ITO薄膜厚度越大，方电阻越小，平均透过率下降；ITO薄膜在波长为360nm～800nm区的透过率随膜厚增加有不同的影响；退火温度越高，膜方电阻越低；当膜厚为300nm、退火温度600℃时，膜方电阻达到2581Ω／n，其透过率在波长550nm处达到89．6％，且薄膜表面平整。     

Fabrication of carbon nanotube based transparent conductive thin films using layer-by-layer technology

This paper presents a simple and convenient process for the fabrication of carbon nanotube based optically transparent and electrically conductive thin films. Single-walled carbon nanotubes (SWNTs) are chemically treated to introduce negatively charged carboxylic groups on their surfaces, so that a stable SWNT aqueous dispersion can be obtained without any surfactant. The substrate surface is modified by a layer-by-layer nanoassembly technique, in which a positively charged hydrophilic polymer molecular layer is formed on the top of the substrate. This helps the SWNT dispersion to be cast onto the substrate using convenient wet coating techniques and increases the bonding force between the thin films and the substrates. Using the developed process, large sizes of conductive pure SWNT thin films that are uniform and highly transparent have been fabricated.     

Fabrication and characterization of ITO thin films on heat-resistant transparent flexible clay films

Transparent conductive indium tin oxide (ITO) thin films were deposited on transparent flexible clay films with heat resistant and high gas barrier properties by rf magnetron sputtering. The electrical, structural, and optical properties of these films were examined as a function of deposition temperature. A lowest resistivity of 4.2 × 10^− 4 Ωcm and an average transmittance more than 90% in the visible region were obtained for the ITO thin films fabricated at deposition temperatures more than 300 °C. It was found that ITO thin films with low resistivity and high transparency can be achieved on transparent flexible clay film using conventional rf magnetron sputtering at high temperature, those characteristics are comparable to those of ITO thin films deposited on a glass substrate.     

Pretreatment of ITO electrode and its physiochemical properties: Towards device fabrication

The aim of this review is to discuss the effect of different pretreatments on the physical and chemical properties of Indium Tin Oxide (ITO) thin films, as well as device performance towards sensor applications. The emphasis is on the surface science studies of ITO thin films before and after treatment in order to provide connecting points between surface properties with a broader field of materials science of ITO. The morphology of a monolayer deposited on ITO directly affects the surface properties of prepared ITO films. Thus, it is a topic of interest to study the influence pretreatment on the surface morphology of ITO films on device fabrication and applications as a device platform.     

高迁移率的钛掺杂氧化铟薄膜在晶硅/非晶硅异质结电池上的应用研究

采用钛掺杂氧化铟旋转靶制备透明导电薄膜应用在晶硅/非晶硅异质结电池上。在不同氧含量下,研究钛掺杂氧化铟薄膜(T100薄膜)的光电性能,同时对比分析ITO薄膜。在电镜下T100薄膜呈现出柱状结构,并且展示出优异的光学性能。T100薄膜最大载流子迁移率可以达到75.6 cm~2·(V·s)^-1。相比于ITO薄膜,T100薄膜具有优异的电学传导和透光率,因此在异质结电池量产线上电池转换效率可以实现0.26%的提升。     

Preparation and characteristics of indium tin oxide (ITO) thin films at low temperature by r.f. magnetron sputtering

Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. Magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4Ω·cm at 80℃, 80 W after annealing.     

Preparation of ITO transparent conductive film by sol-gel method

1Introduction Indium tin oxide(ITO)films are widely used as transparent conductive layers in a large variety of applications such as thin film transistor(TFT)[1,2],liquid crystal displayers(LCD)[3,4],smart mirrors for the windows,solar cells,electrolumine…     

Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.     

Features of the mechanism of a current flowing through an ITO/nSi isotype structure

Solar cells fabricated on the basis of semiconductor-insulator-semiconductor (SIS) structures have been obtained by deposition of transparent conductive ITO films onto silicon crystal substrates by the spray pyrolysis technique. Such structures may be considered as Schottky diodes with a thin insulating SiO₂ layer at the interface formed during the ITO layer deposition. The examination of the current-voltage characteristics shows that, in n⁺ITO/SiO₂/nSi structures, there are two mechanisms of the direct current flow: (i) tunneling-recombination at direct voltages less than 0.3V and (ii) over-barrier emission at voltages higher than 0.3V. In the first case, the direct current flow can be interpreted as multistep tunneling-recombination transitions of electrons from the silicon conduction band into the ITO conduction band with the number of steps being about 100. In the second case, the height of the potential barrier at the ITO-Si interface calculated from the I-V characteristics is about 0.65–0.68 eV.     

纳米铜基柔性导电薄膜制备现状及前景

纳米铜基导电薄膜具有高导电、高性价比且易与柔性基材结合等优点,在下一代柔性电子产品领域具有广泛的应用前景. 然而,纳米铜基导电薄膜在制备的过程中易被氧化,成为制备高导电纳米铜基导电薄膜的难题. 文中从油墨配方、印刷方法、烧结方法等方面系统地介绍了纳米铜基柔性导电薄膜的制造方法,着重介绍了目前抗氧化油墨的设计思路,阐明了目前柔性电子先进微纳连接技术的工艺流程,对比了其优缺点及适用范围,并列举了纳米铜基导电薄膜在下一代柔性电子产品领域的典型应用. 在此基础上,对纳米铜柔性导电薄膜制造尚存的主要问题进行了总结,并对其未来发展趋势进行了展望.     

Effects of SiO<Subscript>2</Subscript> and TiO<Subscript>2</Subscript> on resistance stabilities of flexible indium-tin-oxide films prepared by ion assisted deposition

Inorganic buffer layers such as SiO₂ or TiO₂ and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperature, and the effects of SiO₂ and TiO₂ on the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO₂ or TiO₂ buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. ITO films with SiO₂ buffer layer have better resistance stabilities compared to ones with TiO₂ buffer layer after the ITO films are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO₂ is stronger than that of TiO₂. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO₂ and TiO₂ buffer layers can effectively improve the crystallinity of ITO films in (400), (440) directions.