Dy,Nd掺杂对（Sr，Ba，Ca）TiO3基压敏陶瓷性能的影响

采用常规固相反应法制备（Sr,Ba，Ca）TiO3基压敏陶瓷，在Mn作为受主掺杂元素，Nb^5＋离子取代Ti^4＋离子的前提下，用Dy^3＋或Nd^3＋离子取代Sr^2＋离子，并系统研究掺杂Dy或Nd对（Sr，Ba，Ca）TiO3基压敏陶瓷性能和结构的影响。结果表明：掺杂Dy或Nd可以制备出Ⅴ10mA=4．16-39．37V，α=2．45～3，23的压敏陶瓷。     

复合施主掺杂对(Ba,Pb)TiO3系半导体陶瓷的影响

通过固相法制备了施主掺杂的(Ba,Pb)TiO3半导体陶瓷,研究了掺杂对(Ba,Pb)TiO3陶瓷的物理性能、显微结构、电畴结构及半导化机理的影响.结果表明,掺加一定量的施主Sb3 ,Nb5 及复合施主(Sb3 ,Nb5 )均可以实现陶瓷的半导化,而且杂质种类的不同材料的显微结构、电畴结构及半导化机理也存在显著的差别,复合施主掺杂可以进一步降低材料的室温电阻率,并且制得结构致密、高耐压值的(Ba,Pb)TiO3陶瓷.结合不同施主掺杂对显微结构、电畴结构的影响及缺陷化学理论,对(Ba,Pb)TiO3陶瓷的半导化机理给出了定性的解释.     

溶胶水热法制备La、Nb掺杂(Ba,Ca)TiO_3基热敏陶瓷

采用溶胶水热法制备了La、Nb掺杂的(Ba,Ca)TiO_3基粉体,经1350℃烧结后得到了La、Nb掺杂的(Ba,Ca)TiO_3基热敏陶瓷。利用XRD和SEM对所得粉体及陶瓷的微观结构进行了表征,研究了水热温度、La和Mn掺杂量对(Ba,Ca)TiO_3基陶瓷室温电阻和PTC性能的影响。结果表明,与单纯的溶胶法相比,溶胶水热法更有利于La掺杂进入BaTiO_3的晶格中,而掺入Mn后能够进一步提高其PTC性能。当La掺杂量为0.25%(摩尔分数,下同)、Mn掺杂量为0.03%时,通过溶胶水热法制备的(Ba,Ca)TiO_3基热敏陶瓷具有最小的室温电阻(室温电阻达到3.5?)和较好的PTC性能,说明溶胶水热法更有利于获得低室温电阻高PTC性能的热敏陶瓷。     

溶胶凝胶法制备Zn-Si-B-O掺杂钛酸锶钡(Ba0.60Sr0.40TiO3)玻璃陶瓷的制备及其介电性能研究

采用溶胶凝胶方法制备Zn-Si-B-O掺杂Ba0.6Sr0.4TiO3玻璃陶瓷.研究Zn-Si-B-O玻璃组分从5%～50%(摩尔分数,下同)掺杂Ba0.6Sr0.4TiO3玻璃陶瓷的相结构与介电性能.分析Zn-Si-B-O玻璃组分对Ba0.6 Sr0.4TiO3玻璃陶瓷结构及其介电性能的影响.结果表明:Zn-Si-B-O掺杂Ba0.6Sr0.4TiO3玻璃陶瓷的烧结温度低于传统工艺.Zn-Si-B-O掺杂Ba0.6Sr0.4TiO3玻璃陶瓷的相结构为立方钙钛矿相结构(≤40%),不存在第二相.Zn-Si-B-O掺杂Ba 0.6 Sr 0.4TiO3玻璃陶瓷的介电常数ε随着烧结温度升高而增大,介电损耗tanδ随测试温度的增加而降低.Zn-Si-B-O玻璃相聚集在晶粒边界区域,其作用稀释降低了玻璃陶瓷的介电常数,阻止晶粒生长,并降低了介电损耗tanδ.随着晶粒平均尺寸的减小,Zn-Si-B-O掺杂Ba 0.6Sr 0.4TiO3玻璃陶瓷样品的介电峰变低,平坦,宽化的现象.     

MnO2掺杂对Ba0.6Sr0.4TiO3陶瓷介电调谐性能的影响

采用固相反应法制备了掺杂MnO2的Ba0.6Sr0.4TiO3陶瓷,分析了掺杂MnO2的Ba0.6Sr0.4TiO3陶瓷在直流偏置电场下的介电调谐性能.采用XRD和SEM分析了掺杂MnO2的Ba0.6Sr0.4TiO3陶瓷的相结构和微观形貌,采用HP4192A分析了掺杂MnO2的Ba0.6Sr0.4TiO3介电-温度特性,采用同惠电子公司的TH2816精密电桥测量了介电可调性.结果表明随着MnO2含量的增加,Ba0 6Sr0.4TiO3陶瓷的致密度和晶粒尺寸都呈现先增大再降低的现象.介电可调性随着MnO2的加入而降低.但品质因子随着MnO2含量的增加呈现先增加再降低的现象.当MnO2含量为4mol%时达到最大值55.1.     

MnO2掺杂对Ba0.6Sr0.4TiO3陶瓷介电调谐性能的影响

采用固相反应法制备了掺杂MnO2的Ba0.6Sr0.4TiO3陶瓷,分析了掺杂MnO2的Ba0.6Sr0.4TiO3陶瓷在直流偏置电场下的介电调谐性能.采用XRD和SEM分析了掺杂MnO2的Ba0.6Sr0.4TiO3陶瓷的相结构和微观形貌,采用HP4192A分析了掺杂MnO2的Ba0.6Sr0.4TiO3介电-温度特性,采用同惠电子公司的TH2816精密电桥测量了介电可调性.结果表明:随着MnO2含量的增加,Ba0 6Sr0.4TiO3陶瓷的致密度和晶粒尺寸都呈现先增大再降低的现象.介电可调性随着MnO2的加入而降低.但品质因子随着MnO2含量的增加呈现先增加再降低的现象.当MnO2含量为4mol%时达到最大值55.1.     

Ti4+掺杂对SnO2基压敏陶瓷电学性能的影响

研究了TiO2掺杂浓度对SnO2-Bi2O3-Nb2O5-Sb2O3-MnO基压敏陶瓷非线性特性的影响.利用X射线衍射(XRD)与扫描电镜对相组成和微结构的分析表明:TiO2的添加没有新的相生成.随着TiO2含量的增加,密度与晶粒尺寸均明显减小,压敏电压(EB)以及非线性系数(α)随TiO2掺杂量的增加而增加.当掺杂浓度为3%,烧结温度为1250℃时样品具有最高的压敏电压(EB=1169 V/mm)和非线性系数(α=56).     

BaMgSi_2O_6:RE~(3+)(RE=Tb,Ce)的真空紫外光谱特性

研究了MMgSi_2O_6:Tb~(3+) (M=Ca, Sr, Ba)样品的结构、发光特性.MMgSi_2O_6:Tb~(3+) (M=Ca,Sr , Ba)具有硅酸钙镁石结构,基质掺入铽离子后结构没有明显变化.结果表明:MMgSi_2O_6:Tb~(3+) (M=Ca, Sr ,Ba)在168、220和294 nm附近有强烈的吸收峰.在168 nm真空紫外激发下,546 nm是主发射峰.当材料BaMgSi_2O_6:Tb~(3+)中掺杂Ce~(3+)时,BaMgSi_2O_6:Tb~(3+)样品在168 nm真空紫外激发下的发射强度明显下降.     

Li掺杂Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li(1/7-x))O3高熵陶瓷的制备及介电性能研究

近年来,在高熵合金基础上发展起来的高熵陶瓷逐渐引起了研究者的广泛关注,其出现为开发高性能的无机非金属材料提供了新的设计思路。本文采用固相法制备了BaMO3基钙钛矿型高熵陶瓷Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li(1/7-x))O3 (x = 0, 2.3%, 5.3%, 8.3%, 11.3%),并研究了Li含量对高熵陶瓷物相结构、微观形貌及介电性能的影响。结果表明,Li含量对陶瓷结构的影响不大,陶瓷均保持立方钙钛矿结构,且无杂相产生;陶瓷的晶粒尺寸相对较均匀。当x = 0时,即B位七元等摩尔比Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li1/7)O3高熵陶瓷,其介电常数达到了最大值2920 (@100 Hz),相较于已报道的不掺Li的六元高熵钙钛矿陶瓷Ba(Ti1/6Sn1/6Zr1/6Hf1/6Nb1/6Ga1/6)O3提升了近50倍。     

改进水热法制备Ba0．5Sr0．5TiO3薄膜及其表征

采用改进水热法(金属Ti片与等浓度的Ba2 ,Sr2 强碱性溶液于250℃水热反应5 h,然后经过600℃,0.5 h烧结处理)制备了单一立方相的Ba0.5Sr0.5TiO3薄膜.制备的Ba0.5Sr0.5TiO3薄膜通过XRD,SEM和XPS进行表征分析.结果表明:600℃下经过0.5 h烧结处理的Ba0.5Sr0.5TiO3薄膜结晶更完整;同时,制备的Ba0.5Sr0.5TiO3薄膜表面吸附有OH,经过10 min刻蚀处理后,吸附的OH能谱峰消失.     

Comparison of geometries and electronic structures of polyacetylene,polyborole, polycyclopentadiene,polypyrrole, polyfuran,polysilole, polyphosphole,polythiophene, polyselenophene and polytellurophene

Geometries of monomers through hexamers of cylopentadiene, pyrrole, furan, silole, phosphole, thiophene, selenophene and tellurophene, and monomers through nonamers of borole were optimized employing density functional theory with a slightly modified B3P86 hybrid functional. Bandgaps and bandwidths were obtained by extrapolating the appropriate energy levels of trimers through hexamers (hexamers through nonamers for borole) to infinity. Bandgaps increase with increasing π-donor strengths of the heteroatom. In general, second period heteroatoms lead to larger bandgaps than their higher period analogs. Polyborole is predicted to have a very small or no energy gap between the occupied and the unoccupied π-levels. Due to its electron deficient nature polyborole differs significantly from the other polymers. It has a quinoid structure and a large electron affinity. The bandgaps of heterocycles with weak donors (CH₂, SiH₂ and PH) are close to that of polyacetylene. For polyphosphole this is due to the pyramidal geometry at the phosphorous which prevents interaction of the phosphorus lone pair with the π-system. The bandgap of polypyrrole is the largest of all polymers studied. This can be attributed to the large π-donor strength of nitrogen. Polythiophene has the third largest bandgap. The valence bandwidths differ considerably for the various polymers since the avoided crossing between the flat HOMO — 1 band and the wide HOMO band occurs at different positions. The widths of the wide HOMO bands are similar for all systems studied. All of the polymers studied have strongly delecalized π-systems.     

Supplemental Literature Review of Binary Phase Diagrams: Bi-Ce, Bi-Er, C-Ce, C-La, C-Pr, Cd-I, Cr-Cu, Cu-Er, Er-Sb, F-Sm, F-Yb, and Fe-Gd

Recent literature on Bi-Ce, Bi-Er, C-Ce, C-La, C-Pr, Cd-I, Cr-Cu, Cu-Er, Er-Sb, F-Sm, F-Yb, and Fe-Gd phase diagrams is reviewed in this article in order to update the 1990 compilation Binary Alloy Phase Diagrams, 2nd edition, by T.B. Massalski, et al. For some systems reaction tables and crystal structure data have been included, as well. Diagrams have been checked for consistency with rules for phase diagram construction and modified when necessary. In addition, diagrams needing more work have been identified.