Connectionism;Backpropagation;Structure;Interpretation;Symbolic Logic

A particular backpropagation network, called a network of value units, was trained to detect problem type and validity of a set of logic problems. This network differs from standard networks in using a Gaussian activation function. After training was successfully completed, jittered density plots were computed for each hidden unit, and used to represent the distribution of activations produced in each hidden unit by the entire training set. The density plots revealed a marked banding. Further analysis revealed that almost all of these bands could be assigned featural interpretations, and played an important role in explaining how the network classified input patterns. These results are discussed in the context of other techniques for analyzing network structure, and in the context of other parallel distributed processing architectures.     

Connectionism;Neural Networks;Learning;Ambiguities;Reading

After a brief review of the different types and causes of ambiguous training data and the problems of learning from such data, a class of multi-target models are presented which suggest that neural networks are even better at solving these problems than previously realized. They are able to learn which non-ambiguous subset of a larger ambiguous set of training data best captures any underlying regularities in that data and hence optimize generalization while minimizing the problems of overtraining. It is also shown how the deliberate generation of ambiguous training data can begin to solve some of the longstanding representational problems of mapping time sequences, such as the alignment problem for reading and spelling. The general ideas are illustrated throughout with the well-known problem of tex-to-phoneme conversion, and detailed results of a range of neural network simulations are presented.     

Electronic structures of Heusler alloy Co2FeAl1-xSix surface

We have calculated the electronic structures of Co2FeAl1-xSix(101) surface using first-principles method based on the density functional theory. Because of the surface effect, the minority spin band gap at the Fermi level disappears at the surface of bulk Co2FeAl1-xSix. However, beneath the surface, the minority spin gap opens at the Fermi level, which indicates that the electronic structures of Co2FeAl1-xSix(101) be-come close to that of bulk phase. Accordingly, the Co2FeAl1-xSix(101) surface is a composite tri-layer structure that corresponds to the weakening of half-metallic property in Co2FeAl1-xSix films. Even though, the spin polarization of Co2FeAl1-xSix(101) surface is still larger than that of Co2FeAl or Co2FeSi materials, making Co2FeAl1-xSix a promising spintronics material.     

Preparation and characterization of nanostructured Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> and Sn<Subscript>0.5</Subscript>-Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript>

Nanostructured Bi₂Se₃ and Sn_0.5-Bi₂Se₃ were successfully synthesized by hydrothermal coreduction from SnCl₂·H₂O and the oxides of Bi and Se. The products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and field emission scanning electron microscope (FESEM). Bi₂Se₃ powders obtained at 180°C and 150°C consist of hexagonal flakes of 50–150 nm in side length and nanorods of 30–100 nm in diameter and more than 1 μm in length. The product obtained at 120°C is composed of thin irregular nanosheets with a size of 100–200 nm and several nanometers in thickness. The major phase of Sn_0.5-Bi₂Se₃ synthesized at 180°C is similar to that of Bi₂Se₃. Sn_0.5-Bi₂Se₃ powders are primarily nanorod structures, but small amount of powders demonstrate irregular morphologies.     

Fe₇₃Si₁₅Nb₃B₈Cu₁铁芯薄带的热处理工艺研究

本文对用Finemet型Fe73Si15Nb3B8Cu1快淬薄带制备的铁芯增加预退火处理,再在540 oC晶化退火处理得到退火铁芯。结果表明,随着预退火温度提高,预退火的薄带及再经晶化退火的薄带的韧性均逐渐降低,预退火后非晶薄带的第一晶化温度变化不大,而第二晶化峰值温度向高温方向偏移,预退火扩大了非晶薄带晶化退火的温度范围,有利于获得性能更加稳定的非晶纳米晶薄带;增加预退火处理的薄带的晶粒尺寸比直接晶化退火薄带的晶粒分布更均匀,其中在450 oC预退火的薄带经晶化退火后,晶粒尺寸在8~15 nm之间。增加预退火的铁芯样品,其振幅磁导率和铁损较直接退火的均有明显改善,其中经450 oC预退火的铁芯具有最大的振幅磁导率（μa=8.6×104, f=10 kHz）和最小的交流铁损（P0.5/10k=8.7 W/kg）,分别较直接退火的铁芯升高了16.0%,下降了17.1%。     

Microstructure and microwave dielectric properties of ZnO-B2O3 added （Ca0.254Li0.19Sm0.14）TiO3 ceramics

The effects of ZnO-B2O3 (ZB2) on the sintering behavior and microwave dielectric properties of (Ca0.254Li0.19Sm0.14)TiO3 ceramics were investigated.The densities of the specimens reached the maximum value by adding 3 wt.% ZB2 and then decreased.The sintering temperature of the specimens was lowered from 1300 to 1100°C without degradation of the microwave dielectric properties.The (Ca0.254Li0.19Sm0.14)TiO3 + 3 wt.% ZB2 sintered at 1100°C for 3 h showed good microwave dielectric properties,εr = 108.2,Qf = 6545 GHz,and τf = 6.5 ppm/°C,respectively,indicating that ZB2 was an effective sintering aid to improve the densification and microwave dielectric properties of (Ca0.254Li0.19Sm0.14)TiO3 ceramics.     

DyF&amp;lt;sub&amp;gt;3&amp;lt;/sub&amp;gt;掺杂热变形NdFeB磁体的微观结构和性能

基于热变形技术,研究制备了DyF3掺杂热变形NdFeB磁体的微观结构和磁性能。结果表明,通过热变形,磁体获得了具有明显C轴取向特征的扁平形状晶粒,其剩磁从前驱体烧结磁体的0.77 T提高至 1.34 T,提升了近74%。此外,热变形过程起到了晶界扩散的作用,使得DyF3进一步扩散至NdFeB主相之中,形成了(Nd, Dy)2Fe14B相,从而减小了因热变形带来的矫顽力损失。电化学测试表明,热变形过程可提高磁体腐蚀电位和减小电流密度。变形条件800 ℃/70%时,磁体具有最佳的综合磁性能和电化学性能,其磁性能可达：Br=1.34 T,Hcj=1225 kA/m和(BH)max=286 kJ/m3。     

Andreev reflections in a Bi<Subscript>1.8</Subscript>Pb<Subscript>0.3</Subscript>Sr<Subscript>1.9</Subscript>Ca<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>x</Subscript> break junction

The current-voltage characteristic (CVC) of a break junction made from polycrystalline Bi_1.8Pb_0.3Sr_1.9Ca₂Cu₃O_x is investigated. The experimental CVC has a hysteretic feature that reflects part of the curve with a negative differential resistance. The CVC is discussed within the framework of the Kümmel-Gunsenheimer-Nicolsky theory that takes into account multiple Andreev reflections in superconductor/normalmetal/superconductor junctions.     

Structure and properties of hydrogen-intercalated YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>

The effect of hydrogenation at 150 and 200°С on the structure and magnetic susceptibility of YBa₂Cu₃O_y (123) with different hydrogen contents has been studied. Upon the incorporation of hydrogen, the phase transition of the 123 phase into a defect tetragonal 124 phase occurs. In contrast to the transition upon hydration, the phase transition upon hydrogenation takes place only for compounds characterized by high oxygen contents (y > 6.5). Depending on the compound structure and oxygen content, hydrogen atoms can both occupy interstitials in Cu–O planes to form HYBa₂Cu₃O₆ and join with oxygen to form an oxide–hydroxide. In contrast to hydration, upon hydrogenation of YBa₂Cu₃O_y, the substitution of europium for yttrium and alloying with cerium and zirconium oxides do not block the intercalation of hydrogen into the structure of the 123 compound.     

Magnetic properties and crystallization kinetics of Zn<Subscript>0.5</Subscript>Ni<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript>

Precursor of nanocrystalline Zn0.5Ni0.5Fe2O4 was obtained by grinding mixture of ZnSO4·7H2O,NiSO4·6H2O,FeSO4·7H2O,and Na2CO3·10H2O under the condition of surfactant polyethylene glycol(PEG)-400 being present at room temperature,washing the mixture with water to remove soluble inorganic salts and drying it at 373 K.The spinel Zn0.5Ni0.5Fe2O4 was obtained via calcining precursor above 773 K.The precursor and its calcined products were characterized by differential scanning calorimetry(DSC) ,Fourier transform infrared(FT-IR) ,X-ray diffraction(XRD) ,and vibrating sample magnetometer(VSM) .The result showed that Zn0.5Ni0.5Fe2O4 obtained at 1073 K had a saturation magnetization of 74 A·m2·kg-1.Kinetics of the crystallization process of Zn0.5Ni0.5Fe2O4 was studied using DSC technique,and kinetic parameters were determined by Kissinger equation and Moynihan et al.equation.The value of the activation energy associated with the crystallization process of Zn0.5Ni0.5Fe2O4 is 220.89 kJ·mol-1.The average value of the Avrami exponent,n,is equal to 1.59±0.13,which suggests that crystallization process of Zn0.5Ni0.5Fe2O4 is the random nucleation and growth of nuclei reaction.     

TiAl合金表面阴极微弧沉积Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;陶瓷涂层的生长过程与相组成

目的：利用阴极微弧沉积技术在预处理后的TiAl合金表面制备了Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;陶瓷涂层,研究了涂层的生长过程和相组成。方法：采用电子扫描电镜(SEM、EDS)、电子透射电镜(TEM)、X射线衍射(XRD)等方法,对Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;涂层的生长过程中的微观形貌、组织成分以及晶体结构的演变进行了研究与分析。结果：TiAl合金表面阴极微弧沉积过程中,在阴极表面发生非晶态Al(OH)&lt;sub&gt;3&lt;/sub&gt;的吸附、脱水烧结形成Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;陶瓷涂层的沉积。结论：Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;涂层生长分前期Ⅰ、中期Ⅱ和后期Ⅲ三个阶段,前期起弧阻挡层被击穿,涂层生长较慢、组织致密且与基体结合良好;反应中期涂层生长较快,Al(OH)&lt;sub&gt;3&lt;/sub&gt;不断吸附和脱水烧结,涂层结晶度提高;反应后期涂层生长速度变缓,表层组织疏松、多孔,相组成为87.5 %的α–Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;和12.5 %的γ–Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;。     

Magnetoelectrical effect in layered composites PbZr<Subscript>0.53</Subscript>Ti<Subscript>0.47</Subscript>O<Subscript>3</Subscript>-Mn<Subscript>0.4</Subscript>Zn<Subscript>0.6</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript>

The magnetoelectric (ME) effect in two- and three-layered composites made up of polarized ceramic plates of lead zirconate-titanate PbZr_0.53Ti_0.47O₃ (PZT) and manganese-zinc ferrite Mn_0.4Zn_0.6Fe₂O₄ (MZF) has been studied. Dependences of the transverse ME voltage coefficient (α₃₁) on the magnetostrictive layer thickness and the magnetic field intensity and frequency have been established. The mechanical coupling coefficient of the composite plates has been estimated. Results obtained for two-layered PZT-MZF structures have been analyzed using the method of efficient medium parameters.     

Zn_²⁺掺杂对共沉淀法制备Ce:Gd₃Ga₃Al₂O₁₂陶瓷粉体闪烁性能的影响

本文利用化学共沉淀法制备Zn_²⁺共掺的Ce:GAGG陶瓷粉体。研究了Zn_²⁺共掺的Ce:GAGG陶瓷前驱粉体的TG/DTA和FTIR曲线；分析了不同煅烧温度对Ce:GAGG陶瓷粉体相、形貌和颗粒度分布的影响；系统研究了Zn_²⁺含量对Ce:GAGG陶瓷粉体光致发光,辐射发光,激发光谱和荧光寿命的影响。研究表明：前驱粉体在883℃的相组成为GdAlO₃相和GAGG相；前驱粉体在煅烧温度为900℃时,完全转化为GAGG相；当煅烧温度为1200℃时,GAGG颗粒尺寸控制在20nm~60nm,分布均匀；随着 Zn_²⁺含量的变化,光致发光和辐射发光强度也相应变化,特别的,当Zn_²⁺含量为0.4mol%时,光致发光和辐射发光强度达到最大值；随着Zn_²⁺掺杂含量的上升,荧光寿命出现下降的趋势。因此,Zn_²⁺含量对Ce:GAGG陶瓷粉体的辐射发光具有明显的影响,对降低荧光寿命具有积极的作用,对于提高GAGG闪烁材料的快速响应具有重要意义。     

Phase Relations in the Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-MoO<Subscript>3</Subscript> System in the Solid State. The Crystal Structure of AlVO<Subscript>4</Subscript>

Phase relations in the ternary oxide system Al₂O₃-V₂O₅-MoO₃ in the solid state in air have been investigated by using the x-ray diffraction (XRD) and differential thermal analysis/thermogravimetric (DTA/TG) methods. It was confirmed that in the subsolidus area of the Al₂O₃-V₂O₅-MoO₃ system, there exist seven phases, that is Al₂O₃, V₂O_5(s.s.), MoO₃, AlVO₄, Al₂(MoO₄)₃, AlVMoO₇, and V₉Mo₆O₄₀. Seven fields, in which particular phases coexist at equilibrium, were isolated. The crystal structure of AlVO₄ has been refined from x-ray powder diffraction data. Its space group is triclinic, , Z = 6, with a = 0.65323(1) nm, b = 0.77498(2) nm, c = 0.91233(3) nm, α = 96.175(2)°, β = 107.234(3)°, γ = 101.404(3)°, V = 0.42555 nm³. The crystal structure of the compound is isotypic with FeVO₄. Infrared (IR) spectra of AlVO₄ and FeVO₄ are compared.     

Thermoelectric properties of In<Subscript>z</Subscript>Co<Subscript>4</Subscript>Sb<Subscript>12</Subscript> skutterudites

In this study, indium-filled CoSb₃ skutterudite is synthesized via encapsulated induction melting and subsequent annealing at 823 K for six days, and the crystal structure, lattice constant, filler position, phase homogeneity and stability were investigated. All of the In-filled CoSb₃ samples were n-type conducting samples. The temperature dependence of the electrical resistivity showed In_zCo₄Sb₁₂ is a highly degenerate semiconducting material. The thermal conductivity was reduced considerably by In filling. The highest thermoelectric figure of merit value was achieved when the In filling fraction is 0.25. It was found that the ZT of the In-filled CoSb₃ (In_zCo₄Sb₁₂) was higher than that of the In-substituted CoSb₃ (Co_3.75In_0.25Sb₁₂ and Co₄Sb_11.75In_0.25). This is mainly due to the lower thermal conductivity and higher Seebeck coefficient.     

Phase Equilibria in the System Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-CaO-CoO and Gibbs Energy of Formation of Ca<Subscript>3</Subscript>CoAl<Subscript>4</Subscript>O<Subscript>10</Subscript>

An isothermal section of the system Al₂O₃-CaO-CoO at 1500 K has been established by equilibrating 22 samples of different compositions at high temperature and phase identification by optical and scanning electron microscopy, X-ray diffraction, and energy dispersive spectroscopy after quenching to room temperature. Only one quaternary oxide, Ca₃CoAl₄O₁₀, was identified inside the ternary triangle. Based on the phase relations, a solid-state electrochemical cell was designed to measure the Gibbs energy of formation of Ca₃CoAl₄O₁₀ in the temperature range from 1150 to 1500 K. Calcia-stabilized zirconia was used as the solid electrolyte and a mixture of Co + CoO as the reference electrode. The cell can be represented as: From the emf of the cell, the standard Gibbs energy change for the Ca₃CoAl₄O₁₀ formation reaction, CoO + 3/5CaAl₂O₄ + 1/5Ca₁₂Al₁₄O₃₃ → Ca₃CoAl₄O₁₀, is obtained as a function of temperature: /J mol⁻¹ (±50) = −2673 + 0.289 (T/K). The standard Gibbs energy of formation of Ca₃CoAl₄O₁₀ from its component binary oxides, Al₂O₃, CaO, and CoO is derived as a function of temperature. The standard entropy and enthalpy of formation of Ca₃CoAl₄O₁₀ at 298.15 K are evaluated. Chemical potential diagrams for the system Al₂O₃-CaO-CoO at 1500 K are presented based on the results of this study and auxiliary information from the literature.     

New ternary compound La<Subscript>8</Subscript>Al<Subscript>13</Subscript>Sn<Subscript>3</Subscript>

A new ternary compound La₈Al₁₃Sn₃ was synthesized and studied by means of X-ray powder diffraction technique. The compound La₈Al₁₃Sn₃ crystallizes in a hexagonal AlB₂-type structure with space group P6/mmm (No. 191) and the lattice parameters a = 0.44919(1) nm and c = 0.43835(1) nm. The Smith and Snyder figure of merit for index, F _N , is F ₃₀ = 197.3(30). The Rietveld refinement for the crystal structure of the compound was carried out successfully. The liability R-factors of Rietveld refinement are R _p = 0.114 and R _wp = 0.148. The compound La₈Al₁₃Sn₃ decomposes into LaAl₂ with cubic structure and space group Fd $ \bar 3 $ \bar 3 m (227), LaAl₃ with hexagonal structure and space group P6₃/mmc (194), and Sn at 720°C.     

Enhancement of room-temperature magnetoresistance in La<Subscript>0.6</Subscript>Dy<Subscript>0.1</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/Ag<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

The samples of La0.6Dy0.1Sr0.3MnO3/(Ag2O)x/2(x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10, 0.20, 0.25, and 0.30) were prepared by using the solid-state reaction method.Their magnetic property, transport behavior, transport mechanism and magnetoresistance effect were studied through the measurements of magnetization-temperature(M-T) curves, ρ-T curves and the fitting of ρ-T curves.The results indicated that Ag could take part in the reaction when the doping amount is small.However, when the doping amount is compar...     

Catastrophic Forgetting;Catastrophic Interference;Stability;Plasticity;Rehearsal.

This paper reviews the problem of catastrophic forgetting (the loss or disruption of previously learned information when new information is learned) in neural networks, and explores rehearsal mechanisms (the retraining of some of the previously learned information as the new information is added) as a potential solution. We replicate some of the experiments described by Ratcliff (1990), including those relating to a simple 'recency' based rehearsal regime. We then develop further rehearsal regimes which are more effective than recency rehearsal. In particular, 'sweep rehearsal' is very successful at minimizing catastrophic forgetting. One possible limitation of rehearsal in general, however, is that previously learned information may not be available for retraining. We describe a solution to this problem, 'pseudorehearsal', a method which provides the advantages of rehearsal without actually requiring any access to the previously learned information (the original training population) itself. We then suggest an interpretation of these rehearsal mechanisms in the context of a function approximation based account of neural network learning. Both rehearsal and pseudorehearsal may have practical applications, allowing new information to be integrated into an existing network with minimum disruption of old information.     

Surface modification of LiNi<Subscript>1/3</Subscript>Co<Subscript>1/3</Subscript>Mn<Subscript>1/3</Subscript>O<Subscript>2</Subscript> with Cr<Subscript>2</Subscript>O<Subscript>3</Subscript> for lithium ion batteries

Cr 2 O 3-coated LiNi 1/3 Co 1/3 Mn 1/3 O 2 cathode materials were synthesized by a novel method. The structure and electrochemical properties of prepared cathode materials were measured using X-ray diffraction (XRD), scanning electron microscopy (SEM), charge-discharge tests, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS). The measured results indicate that surface coating with 1.0 wt% Cr 2 O 3 does not affect the LiNi 1/3 Co 1/3 Mn 1/3 O 2 crystal structure (α-NaFeO 2 ) of the cathode material compared to the pristine material, the surfaces of LiNi 1/3 Co 1/3 Mn 1/3 O 2 samples are covered with Cr 2 O 3 well, and the LiNi 1/3 Co 1/3 Mn 1/3 O 2 material coated with Cr 2 O 3 has better electrochemical performance under a high cutoff voltage of 4.5 V. Moreover, at room temperature, the initial discharging capacity of LiNi 1/3 Co 1/3 Mn 1/3 O 2 material coated with 1.0 wt.% Cr 2 O 3 at 0.5C reaches 169 mAh·g 1 and the capacity retention is 83.1% after 30 cycles, while that of the bare LiNi 1/3 Co 1/3 Mn 1/3 O 2 is only 160.8 mAh·g 1 and 72.5%. Finally, the coated samples are found to display the improved electrochemical performance, which is mainly attributed to the suppression of the charge-transfer resistance at the interface between the cathode and the electrolyte.