超导磁通量子比特中的光子辅助隧穿

在极低温的条件下(T=20mK),对Nb/Al0x/Nb构建的超导磁通量子比特进行微波辐照,观察到了光子辅助隧穿。光子辅助隧穿的现象和共振隧穿有着很好的对应关系,证实了超导磁通量子比特中的量子化能级。改变微波功率,进一步得到了多光子作用下的光子辅助隧穿。     

新型导电胶中铜粉表面化学镀纳米银颗粒的导电机理研究

通过讨论集中电阻及邃穿电阻的影响因素来分析覆纳米银铜粉导电胶的导电机理。系统地从理论计算和试验验证两方面考察了导电胶的固化工艺对电性能的影响;考察了所制备的导电胶对铜板的电性能;并对纳米填料对导电胶导电机理影响进行了分析。结果表明随着填料体积分数的增加,填料之间距离越小,相互接触的概率越大。填料之间接触点越多集中电阻越小,当填料相互之间的距离足够小时隧穿电子或场致发射电子才能通过树脂基体。因此填料体积分数只有达到渗流阈值以后,才有优良的导电性;导电填料的形貌主要影响集中电阻的大小。树枝状的覆纳米银铜粉,由于其枝干长,枝杈多,相互搭接的概率大大加大,从而降低了集中电阻;纳米银颗粒主要影响隧穿电阻的大小。纳米银颗粒表面能高,在170～200℃即出现熔化现象,为电子跨过势垒,形成隧穿电子提供足够的能量。最后场致发射现象也影响着隧穿电阻的大小。这是由于在导电胶固化连接铜板之后,铜板两端施加电压较高时,在搭接面之间的导电胶中产生较强的均匀电场,产生场致发射现象,增强了导电胶的电性能。     

高场高JcNb3Al基Al5多芯线材

符合化学计量比的Nb3Al比Nb3Sn工业超导线材具有更高的Tc和Hc2值。但是,除了在2000℃附近的高温下,化学计量比的Nb3Al是不稳定的。此外,通过在铌与铝之间的固态反应生成Nb3Al的速率也很慢。为了克服扩散反应慢的缺点,出现了各种各样的增加微复合线中Nb/Al扩散偶密度的工艺方法,例如卷心工艺、粉末冶金工艺、棒材装管工艺和包覆挤压工艺等。低温扩散反应和Nb/Al微复合可使Nb3Al多芯线材具有很好的应变容许极限和在低场下有高的Jc。但是,Nb3Al芯若偏离化学计量比,其Tc和Hc2(4.2K)却相当低。6年前,日本国家金属研究所Y. Iiji…     

热分析技术在Nb3Sn超导材料扩散热处理中的应用

采用包括差示扫描量热分析(DSC)和热重分析(TG)在内的热分析方法,研究了Nb3Sn超导材料扩散热处理过程.以热分析数据为依据,对Nb-Sn低温超导材料样品进行了真空热处理.通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析了Nb3 Sn导线组织结构演变.结果表明,通过热分析技术确定了Nb,Sn超导线材的热处理温度范围,Nb,Sn样品在670℃加热得到了组织均匀细小的超导相结构.低温条件下的临界电流测试证明了经过热处理的Nb,Sn导线具备了明显的超导性能.     

Nb/Ti比对铸造镍基高温合金长期时效组织演化的影响

采用OM,SEM和TEM等手段,分析了Nb/Ti比对铸造镍基高温合金长期时效微观组织演化的影响.结果表明,在长期时效期间,Nb/Ti比对g'相形貌演化和粗化影响不大,但对g'相体积分数有一定影响.初生MC中Nb/Ti比和(Nb+Ti)/(W+Mo)比与合金Nb/Ti比具有很好的线性关系.随合金Nb/Ti比下降,2个比值线性下降,使MC分解程度提高,热稳定性降低;但是,2个比值的显著改变并不能导致MC分解程度的大幅变化,还存在其它因素对MC热稳定性具有重要影响.MC的分解程度可通过分解前后体积分数的变化来计算,而热稳定性强弱则可由分解程度来定量表达.Nb/Ti比降低,晶界粗化更加严重,晶界析出M23C6的倾向增大,析出M6C的倾向减小.但是,合金中m相的析出演化行为并未受到Nb/Ti比的明显影响.     

NbTi合金的主要缺陷及形成机制

通过对Nb Ti超导线材的制备过程中引起断线的典型缺陷表征,分析了Nb Ti合金中加工流线的形成和溶质再分配导致的富Ti偏析现象以及流线和暗斑的形成机理。结果表明:Nb Ti合金中的富Ti偏析可用X-Ray透射照片中的呈现的黑斑和木纹表征,其实质是一种通道偏析,为后续改进Nb Ti合金制备工艺,消除富Ti偏析、提高Nb Ti合金成分以及组织均匀性奠定基础。     

超导腔束管与法兰接头处Nb/Nb55Ti焊接工艺试验

超导腔是粒子加速器的核心部件,目前国内外针对超导腔的焊接研究主要集中于半单元间的纯Nb对接接头. 对于超导腔束管与法兰间的焊接研究较少,为了探索该接头处异种材料的焊接工艺,采用Nb板与Nb55Ti板垂直搭成的L形接头来模拟超导腔电子束焊接时束管与法兰的接头,在8,12,20 mA束流下进行试验,焊后对不同束流参数下接头的宏观形貌、微观组织、化学成分和显微硬度进行了对比分析. 结果表明,焊接电流为12 mA时焊缝成形较好,焊接电流较大时Nb侧热影响区晶粒长大较为明显;3组试样焊缝熔化边界处出现了晶粒外延生长的现象,随着焊接电流的提高,熔合线附近出现了粗大的柱状晶;在热输入较大时熔池内液态金属混合充分,焊缝宏观偏析得到改善;焊后Nb侧热影响区显微硬度值出现了明显的下降.     

用Nb、Ti、Ta片制备NbTiTa超导线材工艺的研究

用Nb片、Ti片和Ta片制备NbTiTa/Cu超导线材,在加工初始阶段将3种片材在复合体中按…TiNbTaNbTi…的周期排列,然后进行三次挤压。分析了经挤压后该复合体的组织及其断口形貌,测量了经扩散热处理后的临界电流密度。研究表明,在挤压过程中,Nb片、Ti片和Ta片之间发生了成分扩散,但是这种成分扩散不能形成钉扎相和超导相,经合适的扩散热处理后,NbTiTa线料可获得高的临界电流密度。     

热处理Nb47Ti合金吸氢脱氢过程分析(英文)

利用RH600热导式氢分析仪对尺寸为Φ50 mm×40 mm的Nb47Ti合金试样在RX-460型工业电炉中做不同制度热处理后的氢含量变化进行了系统分析,对防止Nb47Ti合金热处理过程中吸氢现象提出了有效的解决措施。结果表明,Nb47Ti合金的吸氢现象主要发生在1200℃高温热处理的环节,在随后的950,930和900℃进行的热处理过程不会使Nb47Ti合金吸氢。Nb47Ti合金热加工过程中氢元素增加是由于在1200℃高温条件下加热炉内稀薄的含氢气氛和Nb及Ti元素物理化学性能比较活泼的综合作用造成的。6×10-2Pa条件下,800℃/3 h和800℃/6 h真空热处理制度使原始H含量为60μg/g的Nb47Ti合金的氢含量分别降低到21和29μg/g。     

Hydrogenation and Dehydrogenation Analysis for Nb47Ti Bars

利用RH600热导式氢分析仪对尺寸为Φ50 mm×40 mm的Nb47Ti合金试样在RX-460型工业电炉中做不同制度热处理后的氢含量变化进行了系统分析,对防止Nb47Ti合金热处理过程中吸氢现象提出了有效的解决措施。结果表明,Nb47Ti合金的吸氢现象主要发生在1200℃高温热处理的环节,在随后的950,930和900℃进行的热处理过程不会使Nb47Ti合金吸氢。Nb47Ti合金热加工过程中氢元素增加是由于在1200℃高温条件下加热炉内稀薄的含氢气氛和Nb及Ti元素物理化学性能比较活泼的综合作用造成的。6×10-2Pa条件下,800℃/3 h和800℃/6 h真空热处理制度使原始H含量为60μg/g的Nb47Ti合金的氢含量分别降低到21和29μg/g。     

Microstructure and mechanical properties of Ti 45Al 5Nb + (0–0.5C) sheets

The possible application of gamma titanium aluminides in aerospace industry requires a detailed understanding of the microstructure–property relationship of sheets made from this material. This paper reports the mechanical properties of sheets up to 1000 °C, based on alloy concepts with high Nb concentrations and small additions of C. Sheets were manufactured by rolling powder metallurgical compacts with compositions Ti 45Al 5Nb and Ti 45Al 5Nb 0.5C. The microstructures of both sheets are “near gamma” and consist of γ-TiAl and ₂-Ti₃Al phases. The texture of both phases is very weak. The strengths levels are very high and that of the C-containing sheet exceeds that of the C-free material at RT by 200 MPa. The mechanical properties of Ti 45Al 5Nb are independent of the direction in the sheet, in the whole temperature range from RT to 1000 °C. However, for the C-containing sheet this is true only in the upper temperature range.     

Scanning tunneling microscopy (STM) of low-dimensional NbO structures on the Nb(110) surface

Method of scanning tunneling microscopy (STM) has been used to investigate a clean Nb(110) face and low-dimensional quasi-periodic NbO structures on the Nb(110) face formed during high-temperature annealing of a single crystal in a vacuum. It is shown that the structures of the NbO type are present on the Nb(110) face in the form of linear rows (chains) consisting of 10 ± 1 atoms of niobium surrounded by oxygen atoms. The height of the NbO structures above the Nb(110) surface and the spacing between the adjacent chains have been determined to be d ～ 1.2 Å and L ～ 13 Å, respectively. Two possible orientations of NbO structures in the directions 〈111〉 of the Nb(110) surface are demonstrated; the structures are mounted into domains. An atomic model of the NbO/Nb(110) surface is suggested.     

Coarsening behavior of γ particles in a nickel-base superalloy

The coarsening behavior of γ' particles in a nickel-base superalloy FGH95 was investigated by means of experimental observations and growth kinetics calculations. The results show that when aging at 1000,1080 and 1140°C for different times,the relation of average particle size to time obeys the cube law ( a /2)3= kt,where k is 15.49 × 103,77.5 × 103 and 230.04 × 103 nm3/min,respectively. The particle size distributions are better fit to the LSW theoretical distributions when aging at 1000°C within 1440 min....     

Modified AlAs/GaAs Double Barrier Quantum Resonant Tunneling Diodes Grown by AP-MOCVD

The MOCVD growth of modified AlAs/GaAs double barrier resonant tunneling diodes(DBRTD)withan A1GaAs chair was reported.The resonances to the first excited states were obtained.The peak-to-valley cur-rent ratio(PVCR)is 1.3 at 77K,room temperature peak current density is 8 kA/cm~2.The resonance voltagesare in agreement with the theoretical approach by transfer-matrix method.Influence of interrupted growthtime at the hetero-interface and incorporation of the AlGaAs chair to the device performances were studiedand the mechanism was discussed.The attempt to add an AlGaAs chair to the DBRTD by MOCVD resultedin improvement in the PVCR and peak current density.     

Atomic-layer epitaxy for heterostructures

Atomic-layer epitaxy offers the ultimate control of interface abruptness and thickness uniformity across a large-area wafer. In the work reported here, GaAs, AlGaAs, and InGaP were grown by atomic-layer epitaxy with one monolayer of growth per deposition cycle. Atomic-layer-epitaxy-grown AlGaAs/ GaAs quantum well structures showed excellent thickness uniformity, and resonant tunneling diodes showed excellent uniformity in both threshold voltage and threshold current. GaInP/GaAs quantum structures were grown and studied; they had well widths as thin as One lattice constant. This 5.6 Å GaAs quantum well is believed to be one of the thinnest grown in this material system.     

RELATIONSHIP BETWEEN CREEP PROPERTIES AND STRUCTURE OF STEEL 20Cr11MoVNbNB

Studies were made of the creep properties and structure change of steet 20Cr11MoVNbNB at550-650℃.It is found that at 550℃ when creep stress>180 MPa there exists linear rela-tion with two different slopes β_1 and β-2 between transitional creep strain ε_β and creeptime t~(1/3),and β_1(in initiol period)>β_2(in later period).The Creep rate of stable stage at550℃ can be expressed by =Aσ exp(-Q_ /RT),where,n=4.7.A exp(-Q_ /RT)=5.37×10~(-16).Apparent creep activation energy Q_ =430 kJ/mol at 550-650℃,which ismuch higher than the self-diffusion activation energy of atoms for matrix Fe.In creepprocess,as the creep stress and time increase,the total weight of precipitated phases and rela-tive weight of Cr,Mo and V increase,but those of Fe and Nb decrease in precipitated phases,     

Nb含量和变形量对水电站用800 MPa高强钢淬火再加热奥氏体晶粒尺寸及其分布的影响

利用Gleeble 3500热/力模拟试验机,通过1000℃+820℃两阶段热变形+900℃淬火再加热联合模拟试验,研究了Nb含量和不同热变形量对水电站用800 MPa级高强度试验钢淬火再加热晶粒尺寸及其分布的影响规律,并通过透射电镜(TEM)对形变诱导析出的Nb(C,N)的粒子尺寸、分布进行了观测。结果表明,热变形态奥氏体晶粒尺寸(D)对于再加热淬火态奥氏体晶粒尺寸(D′)具有重要遗传性影响,二者以及900℃再加热保温时间t之间存在函数关系D′=(1.0057D-6.9785)×(t/300)^0.215,用于预测800 MPa高强钢再加热淬火态晶粒尺寸时具有较高精度。增加Nb含量可同时细化晶粒尺寸D和D′,并改善晶粒尺寸分布、显著降低个别粗大晶粒出现的概率。在常用的淬火加热制度下,添加0.03%Nb和0.05%Nb的晶粒细化效果基本相当,兼顾其经济性应优选0.03%Nb。TEM观测结果表明,含Nb变形态试样中存在大量10～30 nm尺寸的Nb(C,N)粒子,其数量和密度随Nb含量增加而增加,但粒子尺寸并未随之明显增大。通过热力学计算并综合粒子尺寸和形成时间推断,...     

Blast and tensile properties of tantalum/niobium lined SiC/SiC composite tubes for nuclear cladding

The mechanical performances such as tensile strength and blast property of metal lined SiC/SiC composite cladding tubes were investigated. Nb or Ta was selected as liner material, and the SiC/SiC composite layer was fabricated by winding and different precursor impregnation and pyrolysis (PIP) processes. The tensile strengths of different tube samples were measured at room temperature (RT) and 1200 °C, respectively. The blast property was investigated through the maximum water pressure of tubes. And the fracture microstructures were observed by SEM. The highest tensile strength at RT was 150.7 MPa. The blast strength was enhanced with the PIP process increasing from 1 to 4 cycles and the tube of 4 PIP cycles had the highest water pressure of 34.7 MPa. Compared with the metal tubes, the multi-layer structure improved tensile and blast properties significantly. The different processes such as PIP cycles and pyrolytic carbon (PyC) coating were important factors to enhance the mechanical performances of SiC/SiC-based tubes. However, the retention rate of tensile strength was only 18.5% at 1200 °C.     

MOCVD Growth of Doped GaAs/AlGaAs Quantum Heterostructures

The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells(MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) ontheir structures and performances were studied. Continuously grown MQWs, that is, no growth interruption atthe heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence(PL) compared withinterruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line correspondingto the compositional fluctuation and impurity adsorption, and indicated noncommutative structures ofAlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained bycontinuously grown method while growth interruption caused performance degradation. It was concluded thatgrowth interruption may cause accumulation of residua1 impurities in the ambient as well as compositionalfluctuation while continuous growth at very low growth rates can overcome such problems.