衬底温度对FeCrCoNiMn高熵合金氮化物薄膜组织结构和电性能的影响

采用射频反应磁控溅射法在Si(100)衬底上制备出纳米晶高熵合金FeCrCoNiMn氮化物薄膜,结合场发射扫描电子显微镜(FESEM)、电子显微探针(EPMA)、X射线光电子能谱分析仪(XPS)、原子力显微镜(AFM)及四点探针(FPP)研究了衬底温度(40、300、500℃)对沉积薄膜的表面形貌、化学组成、微观结构和导电性能的影响。结果表明,衬底温度对高熵合金FeCrCoNiMn-N薄膜的形貌、组织结构和导电性能有显著影响。随衬底温度的升高,薄膜的表面粗糙度和颗粒/晶粒尺寸增大;与氮反应沉积后,含氮高熵合金薄膜中形成了Mn3N2、MnN、Cr2N和CrN金属氮化物,而Fe、Ni和Co元素则以Fe-Ni-Co合金相形式存在。不含氮合金薄膜其电阻率高达131.78mΩ·cm,加入氮沉积后,随衬底温度的增加,含氮薄膜的电阻率逐渐减小(6.14~0.43mΩ·cm),含氮合金薄膜的电阻率明显小于合金靶材的沉积膜,衬底温度500℃时薄膜的电阻率达到最小值0.43mΩ·cm。     

退火时间对射频溅射p型透明SnO_2/Al/SnO_2导电薄膜结构、形貌、光学和电学性能的影响(英文)

采用SnO2和Al靶,通过射频(RF)溅射在石英基体上制备透明p型SnO2/Al/SnO2导电复合薄膜。沉积薄膜在500°C进行不同时间(1~8 h)退火处理,研究退火时间对SnO2/Al/SnO2复合薄膜结构、形貌、光学和电学性能的影响。X射线衍射结果表明:所制备的p型导电薄膜具有四方金红石型多晶SnO2结构。霍尔效应结果显示:500°C,1 h为最佳退火条件,该条件下SnO2/Al/SnO2复合薄膜的孔隙浓度为1.14×1018 cm-3、电阻率为1.38?·cm。退火时间为1~8 h时,p型SnO2/Al/SnO2复合薄膜的光透射率可达80%以上,退火1 h时薄膜的光透射率达到最大值。     

退火时间对射频溅射p型透明SnO2/Al/SnO2导电薄膜结构、形貌、光学和电学性能的影响（英文）

采用SnO2和Al靶,通过射频(RF)溅射在石英基体上制备透明p型SnO2/Al/SnO2导电复合薄膜。沉积薄膜在500°C进行不同时间(1~8 h)退火处理,研究退火时间对SnO2/Al/SnO2复合薄膜结构、形貌、光学和电学性能的影响。X射线衍射结果表明:所制备的p型导电薄膜具有四方金红石型多晶SnO2结构。霍尔效应结果显示:500°C,1 h为最佳退火条件,该条件下SnO2/Al/SnO2复合薄膜的孔隙浓度为1.14×1018 cm-3、电阻率为1.38?·cm。退火时间为1~8 h时,p型SnO2/Al/SnO2复合薄膜的光透射率可达80%以上,退火1 h时薄膜的光透射率达到最大值。     

退火处理对SnO2：Sb薄膜结构和光致发光性质的影响

用射频磁控溅射法在玻璃衬底上制备出SnO2：Sb薄膜，研究了不同掺杂和退火对薄膜结构的影响。制备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄，晶粒生长的择优取向为（110）。室温下光致发光测量首次观测到392nm附近存在紫外-紫光发射，并对SnO2：Sb的光致发光机制进行了探索性研究。     

掺铁SnO2陶瓷及薄膜制备研究

采用PVA-粉体复合法制备SnO2粉末前驱体,固相反应法制备掺铁SnO2陶瓷,通过XRD、SEM和EDS分析表征材料的晶体结构、表面形貌和Fe元素的微区分布状态.考察了烧结温度和Fe掺杂量对制备工艺条件、陶瓷晶体和晶界结构的影响.结果表明,Fe元素的引入,有效降低了SnO2陶瓷的烧结温度,使主晶相和晶界的显微组织清晰;在最佳烧结温度1350℃下制备出了无杂相、致密的,且掺铁量为8at％的SnO2陶瓷;在衬底温度650℃、镀膜氧压4Pa的条件下制备出了质量较好的掺铁SnO,薄膜.     

沉积和退火温度对多晶ZnO薄膜结构特性的影响

采用RF反应溅射法在Si（111）衬底上制备出了沿C轴高度取向的多晶ZnO薄膜。通过对ZnO薄膜的X射线衍射（XRD）分析，研究了沉积温度及退火对多晶ZnO薄膜取向性、晶粒大小和应力的影响。结果表明，衬底温度和退火温度对多晶ZnO薄膜的晶体结构影响显著。适当的提高衬底温度或适当的增加退火温度都能有效地改善ZnO薄膜的结构特性，但增加退火温度更有优势。同时原子力显微镜观察表明，退火能有效地降低ZnO薄膜的表面粗糙程度。     

衬底温度对CuCrO_2薄膜结构及光电性能的影响

采用射频磁控溅射方法,在石英衬底上制备CuCrO_2薄膜。通过X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外吸收光谱以及电导率的测定,表征不同衬底温度沉积薄膜样品的结构与光电性能。结果表明:薄膜的结晶度、可见光透过率与室温电导率均随衬底温度的升高而增大。衬底温度升高至923 K后,薄膜由非晶转变为具有铜铁矿结构的单相CuCrO_2。1023 K沉积的薄膜光电性能最佳,其平均可见光透过率为50%,室温电导率为0.33 S/cm。在近室温区(150～300 K),1023 K沉积薄膜导电规律符合半导体热激活模式,激活能为0.04 eV。     

玻璃衬底温度对溅射制备SnO2-Al2O3双金属元素薄膜电学及光学特性的影响研究

采用射频(RF)磁控溅射法在玻璃衬底上制备了SnO₂-Al₂O₃ (SAO) 双金属元素薄膜. 通过扫描电镜(SEM)图像,X射线衍射(XRD)图谱,四探针测量,UV-IR及光致发光(PL)谱研究了衬底温度对薄膜表面形貌,晶体微结构,电学及光学特性的影响. 当衬底温度增加时,SAO薄膜的晶粒尺寸增大. SEM图像及XRD图谱所显示的均质表面结构及大晶粒尺寸表明薄膜具有良好的表面形貌和结晶度. 在400-800nm的可见光范围,薄膜的透射率可达~80%-90%, 计算得到薄膜的带隙约4.11-4.14eV, 表面电阻约7.0 -9.4 . 通过合理选择溅射温度, 薄膜的带隙可得到增宽, 表面电阻可被降低. 测量还发现所制备SAO薄膜的PL谱在UV及红光带发光. 这种多晶SAO薄膜可用于透明导电氧化物(TCO)薄膜, 太阳能电池窗, 传感器及光发射器.     

玻璃衬底温度对溅射制备SnO_2-Al_2O_3双金属元素薄膜电学及光学特性的影响（英文）

采用射频(RF)磁控溅射法在玻璃衬底上制备了SnO_2-Al_2O_3(SAO)双金属元素薄膜。通过扫描电子显微镜SEM,X射线衍射仪XRD、四探针测量,UV-IR及光致发光(PL)谱研究了衬底温度对薄膜表面形貌、晶体微结构、电学及光学特性的影响。当衬底温度升高时,SAO薄膜的晶粒尺寸增大。SEM及XRD结果显示的均质表面结构及大晶粒尺寸表明薄膜具有良好的表面形貌和结晶度。在400~800 nm的可见光范围,薄膜的透射率可达80%~90%,计算得到薄膜的带隙4.11~4.14 eV,表面电阻7.0×10~4~9.4×10~4W/。通过合理选择溅射温度,薄膜的带隙可得到增宽,表面电阻可被降低。测量还发现,所制备SAO薄膜的PL谱在UV及红光带发光,这种多晶SAO薄膜可用于透明导电氧化物(TCO)薄膜,太阳能电池窗、传感器及光发射器。     

不同衬底上纳米晶WO3薄膜的光致发光特性

以偏钨酸铵为钨源,聚乙二醇(PEG)为聚合物合成前驱体溶胶,分别在FTO导电玻璃、石英玻璃和石墨衬底制备WO3薄膜,利用X射线衍射(XRD)、拉曼光谱(LRS)和场发射扫描电镜(FESEM)等手段对薄膜进行结构表征,研究衬底和热处理温度对WO3薄膜光致发光性能的影响,并探讨二者对WO3薄膜光致发光性能的影响机制.结果表明:随着热处理温度的升高,WO3薄膜光致发光性能显著提高;在相同热处理温度下,石墨衬底WO3薄膜具有最强的光致发光性能.     

Effect of process parameters on electrical, optical properties of IZO films produced by inclination opposite target type DC magnetron sputtering

IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment, in which a sintered oxide IZO target (doped with 10% ZnO, packing density of 99.99%) was used. The effects of total sputtering pressure and film thickness on IZO films properties were studied. All the films produced at room temperature have a amorphous structure, irrespective of the total sputtering pressure and film thickness. A resistivity of the order of 10⁻⁴ Ω·cm was obtained for IZO films deposited at lower pressure (film thickness of 190 nm). The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.     

Fabrication and characterization of ITO thin films on heat-resistant transparent flexible clay films

Transparent conductive indium tin oxide (ITO) thin films were deposited on transparent flexible clay films with heat resistant and high gas barrier properties by rf magnetron sputtering. The electrical, structural, and optical properties of these films were examined as a function of deposition temperature. A lowest resistivity of 4.2 × 10^− 4 Ωcm and an average transmittance more than 90% in the visible region were obtained for the ITO thin films fabricated at deposition temperatures more than 300 °C. It was found that ITO thin films with low resistivity and high transparency can be achieved on transparent flexible clay film using conventional rf magnetron sputtering at high temperature, those characteristics are comparable to those of ITO thin films deposited on a glass substrate.     

X-ray diffraction investigations of well-ordered sexithiophene films deposited on flexible substrates

Through optimizing deposition conditions such as substrate temperature and growth rate, well-ordered sexithiophene films were deposited on flexible substrates of insulating polyvinylpyrrolidone (PVP) and transparent conductive indium tin oxide (ITO). X-ray diffraction investigation showed that well-ordered sexithiophene films were deposited at substrate temperature of 90 °C and growth rate of 10 nm/min on PVP substrate with the main axis of sexithiophene molecules oriented parallel to the PVP surface and the crystallinity was declined with the decrease of substrate temperature. On ITO substrate, substrate temperature notably influenced the sexithiophene molecule orientation. There existed an inclined angle between the main axis of sexithiophene molecules and the ITO surface in the film deposited at room temperature. With the increase of substrate temperature, the main axis tended to parallel to the ITO surface and well-ordered sexithiophene film was deposited at 50 °C and 10 nm/min. Too slow or too rapid growth rate would lead to poor crystallinity of sexithiophene films on both PVP and ITO substrates.     

X-ray study of tin oxide films obtained by reactive DC sputtering from a metallic tin target in pure oxygen plasma

Tin oxide films deposited on glass substrates were prepared using a metallic tin target in a DC-magnetron sputtering system. Pure oxygen (99.9%) was used as oxidant and plasma gas. The experiments were carried out at a fixed current mode of the power supply and the cathode voltage was measured during 15 min, the first 5 min of pre-sputtering and the last 10 were used for film growth. The deposition was carried out under different conditions of current, oxygen pressure and substrate temperature. The crystalline phases present in the films were identified with an X-ray diffractometer, equipped with a grazing incidence attachment. The angle of incidence was 3°. The preferred orientation degree in the tin oxide films and the relative cassiterite (SnO₂) proportion for each reflection were calculated from the deconvoluted X-ray peaks. It was found that the synthesis conditions have a strong influence over the growth texture and the relative cassiterite proportion over romarchite formation (SnO). To obtain tin oxide films with a high SnO₂ proportion and a high texture in reactive oxygen sputtering, were necessary, relatively high values of substrate temperature, current and oxygen pressure.     

Zn靶与掺铝ZnO靶共溅射制备ZnO:Al薄膜及其性能

采用Zn靶和ZnO(掺2%Al2O3(质量分数))陶瓷靶在玻璃衬底上共溅射沉积Al掺杂ZnO薄膜,即ZnO:Al透明导电薄膜,研究Zn靶溅射功率(0～90 W)和衬底温度(室温、100℃和200℃)对薄膜结构、形貌、光学和电学性能的影响。结果表明:按双靶共溅射工艺制备的ZnO:Al薄膜的晶体结构均为六角纤锌矿结构,且随着Zn靶溅射功率的增加,薄膜的结晶质量呈现出先改善后变差的规律,薄膜中的载流子浓度逐渐升高,电阻率逐渐降低,而薄膜的光学性能受其影响不大;随着衬底温度的升高,薄膜的结晶性能得到改善,薄膜的可见光透过率增强,电阻率降低。     

Effects of substrate temperature and annealing treatment on the microstructure and magnetic characteristics of TbDyFe films

A series of TbDyFe films were prepared by DC magnetron sputtering. The effects of substrate temperature and annealing temperature on the phase structure and the magnetic properties of the sample films were investigated. The an-nealing treatment has a significant influence on the microstructure and the magnetic properties of the sample. The results obtained by XRD indicate that the films deposited at a temperature lower than 525℃ are amorphous and have an easy magnetization direction perpendicular to the film plane. An RFe2 phase is formed in the sample annealed at 550℃ and the residual phases observed are Fe and rare earth oxide. The magnetic properties Hc and Mr/Ms of the film annealed at 550℃ obtain the maximum values,for which the formation of the RFe2 phase is mainly responsible. An annealing treatment leads to a rotation of the sample’s easy axis from being parallel to the film surface to becoming vertical.     

射频反应磁控溅射法制备ZnO:Al透明导电薄膜的光电性能

室温下采用射频(RF)反应磁控溅射技术在玻璃衬底上沉积具有(002)择优取向的透明导电Al掺杂ZnO(AZO)薄膜。XRD结果表明,制备的AZO薄膜为多晶,具有c轴择优取向。退火处理能提高其结晶度。在Al靶射频功率为40W,ZnO靶射频功率为250W,氩气流量为15mL/min的条件下,获得200nm厚的薄膜电阻率约3.8×10-3?·cm,在可见光范围内有很好的光透过率。     

Effects of the substrate temperature on the deposition of thin SiOx films by atmospheric pressure microwave plasma torch (TIA)

The effect of surface temperature on the deposition of silicon oxide (SiO_x) films with a non-thermal microwave axial injection torch (TIA) was investigated in an open air reactor. Argon was used as plasma gas and hexamethyldisiloxane (Si₂O₂C₆H₁₈) as silicon precursor. The parametric study reported here focuses on the influence of the substrate temperature on the morphological and chemical properties of the films deposited in the interval [0 °C–130 °C]. A similar effect of low and high surface temperature on the deposition process and on the microstructure of the deposited films was highlighted. Macroscopically, particles were promptly produced in the gas phase and incorporated to the film, which generates high surface roughness. Microscopically, FTIR results have shown a high carbon contamination of the deposited films at low and high temperatures, resulting in understoichiometric SiO_x films. They have also demonstrated that an optimum growth window for smooth and particle free SiO_x was to keep the surface temperature between 30 and 60 °C. Simple reaction mechanisms for powder formation and continuous silicon oxide thin films growth are suggested for each temperature ranges.     

LiCoO2 cathode thin film fabricated by RF sputtering for lithium ion microbatteries

Thin films of lithium cobalt oxide were deposited on Pt or Pt/Ti/quartz glass substrates by radio frequency (RF) magnetron sputtering at the substrate temperatures from room temperature to 500 °C. As the substrate temperature increased, the film structure changed from amorphous structure to crystallinity with a strong (003) texture as characterized by X-ray diffraction. The surface morphology and cross-section were observed using scanning electron microscopy. It was found that the films tended to crack at a high substrate temperature. Charge-discharge tests of these films were conducted and compared. The different electrochemical characteristics of these films were attributed to the modified crystallography, morphology, and thermal stress. The LiCoO₂ film deposited at 400 °C showed a well-defined 4.0 V voltage plateau on charge and a 3.9 V plateau on discharge, and delivered 54.5 μAh/cm² μm at the first discharge capacity, with good cycling performance, giving evidence that such films could be used as the thin film cathodes for lithium microbatteries.     

Fabrication of titanium oxide films at low temperature from aqueous solution

Titanium oxide thin films were prepared on self-assembled monolayers-coated silicon substrate using layer-by-layer self-assembly method and chemical bath deposition from an aqueous solution. The effects of temperature on structural properties, thickness and morphologies of titanium oxide thin films were investigated. The results show that the absorption peak of peroxo complexes of titanium at 410 nm decreases gradually with increasing the temperature. The deposited films consisting of titanium oxide nanocrystals are believed to be fully amorphous by XRD. Titanium oxide thin films fabricated at 60 °C for 2 h are continuous, dense and homogeneous with a size in the range of 20-40 nm by SEM. The chemical compositions of deposited thin films were studied by EDS, and the mole ratio of O to Ti is 2.2:1.