碳化硅研抛加工过程中亚表面损伤的研究北大核心

碳化硅抛光加工中极易出现表面/亚表面损伤,使其应用受限。基于研抛加工中脆性材料去除机理,建立亚表面损伤深度(SSD)的理论模型。利用有限元仿真模拟了单颗粒抛光加工的过程,分析了不同研抛参数(抛光速度、抛光深度和磨粒顶角)对SSD的影响。结果表明,当加工深度大于脆性材料临界切削深度时,材料去除主要是脆性模式;SSD随着磨粒顶角以及抛光深度的增大而增大,随着抛光速度的增加而减小,但是抛光速度过高会不利于亚表面损伤的控制。由于抛光过程中运动学特性,抛光速度对SSD的影响大于抛光深度和磨粒顶角。     

线性液动压抛光加工的流场特性研究

分析了线性液动压抛光加工中液流对工件表面的作用形式，推导了黏性切应力和液动压力数学模型。对线性液动压抛光流场进行了数值模拟，剖析了抛光辊子尺寸以及抛光工艺参数对液动压和黏性切应力的数值及分布均匀性的影响规律。研究结果表明：液动压力和黏性切应力数值随辊子直径和辊子转速的增加而增加，与此同时其分布均匀性反而下降；抛光间隙值越小，液动压力和黏性切应力数值越大，且其分布均匀性越好。最后采用自制的线性液动压抛光实验平台，以K9玻璃为实验对象，探究了抛光加工表面形貌和表面粗糙度的创成过程。     

碳化硅研抛加工过程中亚表面损伤的研究

碳化硅抛光加工中极易出现表面/亚表面损伤,使其应用受限。基于研抛加工中脆性材料去除机理,建立亚表面损伤深度(SSD)的理论模型。利用有限元仿真模拟了单颗粒抛光加工的过程,分析了不同研抛参数(抛光速度、抛光深度和磨粒顶角)对SSD的影响。结果表明,当加工深度大于脆性材料临界切削深度时,材料去除主要是脆性模式;SSD随着磨粒顶角以及抛光深度的增大而增大,随着抛光速度的增加而减小,但是抛光速度过高会不利于亚表面损伤的控制。由于抛光过程中运动学特性,抛光速度对SSD的影响大于抛光深度和磨粒顶角。     

磁流变变间隙动压平坦化加工力特性研究

磁流变变间隙动压平坦化加工利用工件的轴向低频振动使磁流变液产生挤压强化效应,可以有效提高加工效果并使光电晶片快速获得纳米级表面粗糙度。通过旋转式测力仪试验研究不同变间隙参数对磁流变变间隙动压平坦化加工过程中抛光正压力的影响规律,结果表明,在工件轴向低频振动作用下,抛光正压力形成脉冲正值和负值周期性的动态变化过程;将工件轴向低频振动过程分解为下压过程与拉升过程,下压速度和拉升速度对动态抛光力有不同的响应特性;随着最小加工间隙的减小抛光正压力会急剧增大;设置最小加工间隙停留时间观察抛光正压力变化,可以发现在工件最小加工间隙停留期间抛光力从峰值逐渐衰减并趋于平稳;挤压振动幅值对抛光正压力影响较小。建立了磁流变变间隙动压平坦化加工材料去除模型,弄清了在动态压力作用下,磨料更新及其附加运动机制,研究了磁流变变间隙动压平坦化加工过程中磨料颗粒对工件表面柔性划擦和微量去除的作用机理,为磁流变变间隙动压平坦化加工的工艺优化提供了理论依据。     

高压处理对纳米碳化硅形貌的影响

纳米科学技术是21世纪的三大科学技术之一,纳米半导体的性质就特别引人瞩目.介绍了纳米碳化硅在冷高压条件下的表面特性以及晶体在透射电镜下的微观结构.结果表明,晶体粒径随压力的增大而增大,纳米碳化硅的致密性得到提高.     

Fe_3O_4基电流变液的抛光特性研究

利用Fe3O4基电流变液对玻璃材料进行抛光加工试验,考察了抛光截面的形状特征,研究了加工间隙、电场强度对玻璃工件的材料去除的影响.结果显示电流变效应微磨头定点抛光的加工痕迹呈近似"U" 形,材料去除率取决于磨料与工件表面的研磨压力和相对速度的共同作用,材料去除量随着外加电压的增大而呈线性增大,而随加工间隙的增大而线性减小.     

无磨料超声抛光工艺参数优选试验研究

以45钢轴件为加工对象进行无磨料超声抛光工艺试验,优选工艺参数,探索各工艺参数对表面粗糙度的影响.试验结果表明,工艺参数对加工表面粗糙度影响顺序为进给量、超声波发生器的输出功率、抛光预压力和工具头半径;表面粗糙度值随进给量的增大而增大,而工具头半径、预压力和超声波发生器的输出功率对表面粗糙度的影响曲线为驼峰曲线,过大或过小的工艺参数均影响抛光效果.     

单晶硅同质互抛实验研究

以材料的去除率和表面粗糙度为评价指标设计对比实验,验证了硬脆材料互抛抛光的可行性,得到了抛光盘转速对硬脆材料互抛的影响趋势和大小。实验结果表明：当抛光压力为48 265 Pa（7 psi）、抛光盘转速为70 r/min时,自配抛光液互抛的材料去除率为672.1 nm/min,表面粗糙度为4.9 nm,与传统化学机械抛光方式的抛光效果相近,验证了硬脆材料同质互抛方式是完全可行的;互抛抛光液中可不添加磨料,这改进了传统抛光液的成分;采用抛光液互抛时,材料去除率随着抛光盘转速的增大呈现先增大后减小的趋势,硅片的表面粗糙度随着抛光盘转速的增大呈先减小后增大的趋势。     

集群磁流变效应平面抛光力特性试验研究

集群磁流变平面抛光加工硬脆材料可以高效率获得纳米/亚纳米级表面粗糙度,其中集群磁流变效应抛光垫对加工表面的作用力(抛光力)是材料去除的关键因素,搭建了集群磁流变平面抛光三向测力平台,对模拟的集群磁流变抛光加工过程抛光力(切向力F_t和法向力F_n)进行了系统试验研究。结果表明,2'单晶硅片试验条件下集群磁流变平面抛光切向力Ft最大达到32.25 N、法向力Fn最大达到62.35 N、F_t/F_n值为0.46~0.77;对抛光力影响最大的工艺参数是磁场强度和加工间隙,其次是羰基铁粉与磨料质量分数、磁流变液流量、抛光盘转速,工件摆幅与速率影响最小。集群磁流变平面抛光力大小以及Ft/Fn值随着工件材料硬度的增大而增大,具有低正压力高剪切力特征,有利于提高硬脆材料的超光滑平坦化抛光加工效果。     

纳米聚集氧化硅固定磨料抛光布的抛光特性

针对传统磨料的固定磨料抛光布容易在加工表面产生划伤,以及材料去除效率低等问题,提出了采用微米级球形聚集氧化硅粒子的固定磨料抛光布。将纳米聚集氧化硅粒子添加到抛光布中,用pH为10.5的碱性水溶液替代传统的抛光液,进行了Si基板的的抛光加工试验。与传统采用不规则形状天然氧化硅及球形熔融氧化硅固定磨料抛光布进行了比较,得到了纳米聚集氧化硅的固定磨料抛光布的加工特性,并讨论了它的基本参数对加工特性的影响。实验得到了与现行纳米抛光液(重量百分比为3%,pH=10.5)相同的材料去除率,加工表面粗糙度降低了约30%。与传统不规则形状天然氧化硅磨料抛光布相比,纳米聚集氧化硅抛光布的磨料为球形,弹性系数仅为其1.4%~60%,因此不易划伤抛光表面。与熔融氧化硅抛光布相比,纳米聚集氧化硅抛光布在pH为10.5的碱性水溶液中磨料表面可吸附的[-OH]离子提高了25倍,使得液相化学去除作用增大至去除率的70%以上。另外,随着纳米聚集氧化硅的微米粒径的增大,固定磨料抛光布的纳米级加工表面粗糙度几乎不变,但对前加工面表面粗糙度的去除能力明显增大,表现出微米粒径效应。     

Effect of extrusion pressure and number of finishing cycles on surface roughness in magnetorheological abrasive flow finishing (MRAFF) process

Magnetorheological abrasive flow finishing (MRAFF) was developed as a new precision finishing process for complicated geometries using smart magnetorheological polishing fluid. This process introduces determinism and in-process controllability of rheological behaviour of abrasive laden medium used for finishing intricate shapes. Magnetorheological polishing (MRP) fluid is comprised of carbonyl iron powder and silicon carbide abrasives dispersed in a viscoplastic base of grease and mineral oil and exhibits change in rheological behaviour in presence of external magnetic field. This smart behaviour of MRP fluid is utilized to precisely control finishing forces. The process performance in terms of surface roughness reduction depends on process variables like hydraulic extrusion pressure, magnetic flux density in the finishing zone, number of finishing cycles, and composition of MRP fluid. In the present work, experiments were conducted on a hydraulically powered MRAFF experimental setup to study the effect of extrusion pressure and number of finishing cycles on the change in surface roughness of stainless steel grounded workpieces. A new observation of “illusive polishing” action with the initial increase in number of finishing cycles is reported. The actual finishing action is possible only after removal of initial loosely held material remaining after grinding.     

抛光的几种工艺对比

对抛光的几种不同工艺进行了阐述、比对,分析指出了新的纳米抛光技术由于它的优点将被广泛应用,并将逐步替代传统的抛光工艺。     

纳米黏着接触行为及其压力分布和相变过程分析

运用分子动力模拟方法研究刚性球型探头与原子级光滑表面的黏着接触过程,分析接触过程的载荷-位移曲线、压力分布和相变情况;得到加载过程黏着接触的"突跳点"与"引力最大点",分别是由于探头与基体原子之间的范德华作用和键合作用导致;在卸载过程中引力最大时刻,探头与基体发生"颈缩"分离。在"突跳"点时,接触区原子处于受拉状态,在"突跳"过程后,接触区中心原子逐渐处于受压状态,接触边缘处于受拉状态;随着探头不断压入基底,接触区中心原子所受压力越来越大。在卸载过程中的引力最大时刻,接触区原子重新处于受拉状态。在加载过程中接触区内有高压相的产生,在卸载过程"颈缩"分离阶段,配位数为0的原子数目迅速增加,更多的原子粘附在探头上被带走。     

氮化硅陶瓷磨削温度与表面变质层的仿真与实验

为了揭示氮化硅陶瓷磨削温度分布规律以及其对表面成形的影响,首先,建立氮化硅陶瓷纳米级切削的分子动力学模型;其次,研究切削过程中切削参数对切削温度的影响,以及加工过程中切削表面变质层的形成过程;最后,对 K 型热电偶测温和表面能谱分析的仿真与实验结果进行对比分析.结果表明:随着金刚石磨粒切削深度和切削速度的增加,原子晶格发生变形和非晶相变过程中时释放的能量增多,从而使切削温度升高;切削高温会引起氮化硅陶瓷发生非晶相变现象,非晶态原子重新与已加工表面断裂的原子键结合形成表面变质层;分子动力学仿真模型可以用来预测氮化硅陶瓷材料实际磨削加工中磨削温度变化情况,对生产加工具有参考价值.     

典型碳化硅光学材料的超光滑抛光试验研究

研究了三种典型的碳化硅光学材料CVD SiC、HP SiC以及RB SiC的材料去除机理与可抛光性,并对其进行了超光滑抛光试验。在分析各种材料制备方法与材料特性的基础上,通过选择合理的抛光工艺参数,均获得了表面粗糙度优于Rq=2nm（采样面积为0.71mm×0.53mm）的超光滑表面。试验结果表明：研磨过程中,三种碳化硅光学材料均以脆性断裂的方式去除材料,加工表面存在着裂纹以及材料脱落留下的缺陷;抛光过程中,CVD SiC主要以塑性划痕的方式去除材料,决定表面粗糙度的主要因素为表面微观划痕的深度;HP SiC同时以塑性划痕与晶粒脱落的形式去除材料,决定表面粗糙度的主要因素为碳化硅颗粒大小以及颗粒之间微孔的尺寸;RB SiC为多组分材料,决定其表面粗糙度的主要因素为RB SiC三种组分之间的去除率差异导致的高差。
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化学机械抛光过程中护环对硅片表面接触压强分布和宏观轮廓的影响

为了获得单晶硅片化学机械抛光过程中护环对接触压强分布的影响规律,根据有护环化学机械抛光实际出发,建立了抛光过程的接触力学模型和边界条件,利用有限元的方法对有护环抛光接触状态接触压强分布进行了计算和分析,并利用抛光实验对计算获得结果进行了验证;获得了硅片与抛光垫间的接触表面压强分布形态,以及护环几何参数对压强分布的影响规律;结果表明护环抛光接触压强的分布也存在不均匀性,而且在硅片外径邻域内接触压强最大,这些也能导致被加工硅片产生平面度误差和塌边,选择合理地护环几何参量和负载比,可以改善接触压强场分布的均匀性。     

Wear transition diagram for silicon carbide

To obtain information on the tribological behaviour of silicon carbide at elevated temperatures, unlubricated ball-on-flat wear tests were conducted on sintered silicon carbide in self-mated sliding in air. The contact load was varied from 3.2 to 98.0 N, and a temperature range of 23°C to 1000°C was used. Scanning electron microscopy, Fourier transform infrared spectroscopy and energy-dispersive spectroscopy were used to elucidate the wear mechanisms. The results of the tests and observations were employed to construct a wear transition diagram, which provides a summary of tribological information including friction coefficient, wear coefficient and wear mechanisms as a function of temperature and load. The wear transition diagram for the sintered silicon carbide studied is divided into four regions plus one transition zone. At room temperature, under high loads and high environmental humidity, the tribological behaviour is controlled by tribochemical reactions between the silicon carbide surface and water vapour in the environment. Under low loads and at temperatures below 250°C, wear occurs by ploughing and polishing. At temperatures about 250°C and under low loads, tribooxidation and formation of cylindrical wear particles control the tribological behaviour. Wear occurs by microfracture when the load is increased above a critical value; and both the friction coefficient and the wear coefficient increase.     

粘结Fe＋SiC磁性磨料的研究

研究了粘结Fe SiC磁性磨料的成分、粒度以及研磨时间对几种钢件研磨表面粗糙度的影响,并通过扫描电镜分析研磨表面形貌,探讨了研磨机理。试验结果表明：该磁性磨料具有良好的研磨效果,而磨磨机理是SiC粒子对钢件表面的低应力磨料磨削。     

Effect of processing parameters of laser on microstructure and properties of cladding 42CrMo steel

Hard-inert materials such as diamond, silicon carbide, gallium nitride, and sapphire are difficult to obtain from the smooth and damage-free surfaces efficiently required by semiconductor field. Therefore, this study proposed a chemical kinetics model to evaluate the material removal rate of diamond in chemical mechanical polishing process and to investigate the material removal mechanism by examining the surface information with optical microscopy, surface profilometry, and atomic force microscopy as well as X-ray photoelectron spectroscopy. The theoretical and experimental results show that chemical and mechanical synergic effect may promote the diamond oxidation reaction in chemical kinetics. The material removal rate is acceptable when the mechanical activation coefficient is smaller than 0.48. The 2.5 μm B₄C abrasives, the polishing temperature of 50 °C, and the polishing pressure of 266.7 MPa are optimal parameters for diamond polishing with potassium ferrate slurry. It provides the highest material removal rate of 0.055 mg/h, the best surface finish (about Ra 0.5 nm) and surface quality (no surface scratches or pits). It then discusses how mechanical stress may promote the chemical oxidation of oxidant and diamond by forming “C-O,” “C=O,” and “O=C-OH” on diamond surface. The study concludes that chemical kinetics mechanism is effective for the investigation of the synergic effect in chemical mechanical polishing hard-inert materials.     

A study on the characteristics of a wafer-polishing process according to machining conditions

The polishing process for silicon wafers plays a key role in the fabrication of semiconductors, since a globally planar, mirrorlike wafer surface is achieved in the process. The surface roughness of the wafer depends on the surface properties of the carrier head unit, together with other machining conditions, such as working speed, type of polishing pad, temperature, and down force. In this paper, the results of several experiments are used to study silicon wafer surfaces. The experiments were designed to observe the down force and temperature when a wafer carrier head unit with wafer was pressed down onto a polishing pad. A load cell was employed to detect the applied pressure against the polishing pad, and the working temperature was measured with an infrared sensor. Wafer surface roughness was investigated according to several parameters and experimental data.