X射线激光自支撑Mo滤光膜的制备及特性研究

用直流平面磁控溅射方法在抛光玻璃衬底上淀积Mo薄膜,将薄膜在真空环境中进行热处理,用扫描探针显微镜(SPM)方法观察了薄膜的表面形貌,X-射线衍射方法分析了薄膜中应力各向异性特征及其与淀积时溅射气体压强和真空热处理的关系.发现薄膜中晶粒具有明显的择优取向,内应力沿径向对称分布,切向应力比径向应力更具有压应力特性,应力的各向异性特征与溅射原子的入射方向有关.真空热处理对薄膜中压应力的释放作用不明显,然而能有效地释放薄膜中的张应力.用HF酸腐蚀衬底的方法制备了自支撑Mo薄膜,发现脱膜前后薄膜表面微观形貌未产生大的变化.     

X射线激光自支撑Mo滤光膜的制备及特性研究

用直流平面磁控溅射方法在抛光玻璃衬底上淀积Mo薄膜,将薄膜在真空环境中进行热处理,用扫描探针显微镜(SPM)方法观察了薄膜的表面形貌,X-射线衍射方法分析了薄膜中应力各向异性特征及其与淀积时溅射气体压强和真空热处理的关系.发现薄膜中晶粒具有明显的择优取向,内应力沿径向对称分布,切向应力比径向应力更具有压应力特性,应力的各向异性特征与溅射原子的入射方向有关.真空热处理对薄膜中压应力的释放作用不明显,然而能有效地释放薄膜中的张应力.用HF酸腐蚀衬底的方法制备了自支撑Mo薄膜,发现脱膜前后薄膜表面微观形貌未产生大的变化.     

热处理对离子束溅射Ta_2O_5薄膜特性的影响

利用离子束溅射沉积技术制备了Ta2O5薄膜,在100~600℃的大气氛围中对其进行热处理(步进温度为100℃),并对热处理后样品的光学常数(折射率、折射率非均匀性、消光系数和物理厚度)、应力、晶向和表面形貌进行了研究。研究显示,随着热处理温度增加,薄膜折射率整体呈下降趋势,折射率非均匀性和物理厚度呈增加趋势,结果有效地改善了薄膜的消光系数和应力,但薄膜的晶向和表面形貌均未出现明显的变化。结果表明:热处理可以有效改变薄膜特性,但需要根据Ta2O5薄膜具体应用综合选择最优的热处理温度。本文对离子束溅射Ta2O5薄膜的热处理参数选择具有指导意义。     

磁控溅射制备高聚物基TiO2-CeO2复合薄膜的组织和性能

采用磁控溅射技术在PET(聚对苯二甲酸乙二醇酯)衬底上制备了TiO2-CeO2复合薄膜;用X射线衍射仪、扫描电镜和UV-VIS分光光度计分析了薄膜的相组成、表面微观形貌和透射率.结果表明:溅射态的薄膜为非晶态;经150℃退火12 h后,薄膜表面有锐钛矿相颗粒析出;随着溅射功率的增加,薄膜表面的锐钛矿相颗粒数量明显增多,形状接近球形,在功率为100 W时,尺寸约为120 nm;随着溅射功率的增大,薄膜对紫外和可见光的透射率降低;另外,薄膜表面形貌和透射率也受溅射时间的影响.     

溅射气压和衬底温度对Si1-xGex薄膜结构和光吸收性能的影响

采用射频磁控溅射法沉积了Si1-xGex薄膜,研究了溅射气压、衬底温度对薄膜结构、厚度、表面形貌、表面成分及光吸收性能的影响。结果表明:薄膜均为微晶结构且相组成不随溅射气压和衬底温度的改变而改变;随着溅射气压升高,薄膜结晶性能降低,升高衬底温度使其结晶性能提高;随气压或温度的升高,薄膜厚度均先增大后减小,在1.0Pa或400℃达到最大值;随温度的升高,薄膜表面团簇现象消失并变得平整致密,气压为8.0Pa时,表面有孔洞和沟道;随气压升高,薄膜中锗含量降低,光吸收强度减小,光学带隙增大;衬底温度的变化对光学带隙影响不大。     

Al、Sn掺杂对于ZnO薄膜微结构及光学特性的影响

采用真空电子束蒸发金属薄膜及后续热氧化技术在石英衬底上分别制备出了ZnO、Al∶ZnO以及Sn∶ZnO薄膜。通过X射线衍射仪(XRD),紫外-可见分光光度计和原子力显微镜(AFM)等分析仪器对比研究了Al、Sn掺杂对ZnO薄膜结晶质量、光学性质及表面形貌的影响。测试结果表明,Al、Sn掺杂可以使薄膜结晶质量得到提高,薄膜应力部分释放,薄膜表面的粗糙度也相应增加,掺杂对薄膜光学带隙的影响在一定程度取决于金属薄膜的氧化程度,氧化充分可以使光学带隙变宽,反之则变窄。     

自动控制金属氧化物薄膜的真空淀积

最近几年,在生产光学和微电子学薄膜系统中,真空淀积金属氧化物的应用有了迅速的增长。其结果是,淀积过程控制设备的发展也有了进展,用化学性质活泼的材料生产可靠的薄膜常遇到的许多困难已被克服。监视和控制金属氧化镀层的先进的系统已由English、Pntnev和Holland研究成功,其最终目的是从淀积周期中去除操作者的误差。这项工作包括了在自动控制蒸发速率的条件下、金属氧化物反应蒸发的研究和实际经验。本文详细地介绍了这项工作和获得的某些结果。也讨论了用蒸发方法真空淀积金属氧化物的历史背景和最近十年来在控制方面的某些工作。     

ICPECVD法制备氧化硅薄膜的工艺研究

以SH_4和O_2作为反应气体,利用电感耦合等离子体增强型化学气相淀积(ICPECVD)技术制备了氧化硅薄膜,通过正交试验设计的方法研究了反应室压强、衬底温度和射频功率3个关键工艺参数对氧化硅薄膜淀积速率的影响及其显著性。实验结果表明:反应室压强和射频功率对淀积速率的影响具有高度显著性,各参数对刻蚀速率的影响程度依次为反应室压强射频功率衬底温度,并讨论了所选参数对淀积速率的影响机理。     

一氧化硅薄膜剩余应力的退火

郝兰(Holland)等(1960)曾经在对这个杂志的通讯备忘录中提出过,如果薄膜在700℃或以上的温度退火,或当淀积时基底温度是200℃或更高,那么淀积在碳酸钠石灰玻璃上的一氧化硅薄膜的内应力能够被消除。我们曾经对于一氧化硅的应力进行过研究(1961年真空讨论汇编),同时在这个备忘录中我们将描述退火过程的一些细节。     

伽伐尼电池式气敏元件的研制

本文报导用高频溅射的方法在聚四氟乙烯薄膜上淀积的铂膜，用电解法再制成铂黑膜。以硫酸为电解液，以铂黑膜和铂片为电极组成伽伐尼电池式气敏元件，对H2和CO具有较高的灵敏度和良好的选择性。     

Tribological properties of nanostructured DLC coatings deposited by C60 ion beam

The frictional and wear characteristics of nanostructured DLC films were investigated. The coatings were deposited on silicon substrates by irradiation of a mass-separated C₆₀ ion beam with 5 keV of energy and a deposition temperature ranging from 100 to 450 °C. The effects of deposition temperature on the surface morphology, nano-structure, mechanical properties and tribological characteristics of the coatings were assessed. Results showed that deposition temperature strongly affects the nanostructure and surface morphology of the coatings. Coatings deposited at temperatures exceeding 350–400 °C exhibited an increase in surface roughness as well as compressive stress due to the formation of graphite, which led to a significant increase in the friction coefficient and wear rate. Coatings deposited at 300 °C showed the best tribological properties.     

Amorphous hydrogenated carbon films for tribological applications I. Development of moisture insensitive films having reduced compressive stress

Although earlier investigations on the tribological behaviour of amcrphous hydrogenated carbon (AHC) films in sliding contact with steel showed encouraging results, four open issues were identified. They were: (a) dependence of friction and wear on humidity (i.e., the friction coefficient and the wear increased with humidity), (b) limitations on film thickness (i.e., films greater than 2 μm thick delaminated due to large compressive stress), (c) deposition of films on substrates other than silicon and (d) lubricant compatibility (i.e., formation of lubricant-derived antiwear films on AHC film surfaces). Steps were taken to address some of these open issues by incorporating silicon in AHC films. Friction and wear tests were conducted on AHC films containing various amounts of silicon. Incorporation of silicon in AHC films rendered the friction coefficients and the wear of a steel counterface insensitive to moisture. Silicon incorporation in AHC films also significantly reduced compressive stress. This allowed deposition of 10 μm thick films. These effects were achieved without any compromise with the friction coefficient and the film wear if the amount of silicon in the film was kept within a certain concentration range. In addition, silicon-containing AHC films were thermally more stable than silicon-free films. Experiments conducted with two lubricants resulted in significantly lower wear of the silicon-free AHC films than that obtained for unlubricated sliding. Similar friction coefficients were obtained for AHC film/steel and steel/steel combinations in lubricated sliding.     

Mechanical properties of amorphous carbon nitride thin films prepared by reactive magnetron sputter-deposition

Nanoindentation hardness and compressive stress in amorphous carbon nitride thin films prepared by unbalanced magnetron sputter-deposition were studied. The coating hardness and compressive stress were found to be strongly dependent on processing parameters such as substrate bias and nitrogen partial pressure. Under optimized deposition conditions, carbon nitride thin films with nanoindentation hardness about 25 GPa have been coated onto Si wafers and M2 steels. A strong correlation between coating hardness and compressive stress in the coating was observed.     

Vector control of induced magnetic anisotropy using an in situ quadrupole electromagnet in ultrahigh vacuum sputtering

We demonstrate the incorporation of a quadrupole electromagnet into an ultrahigh vacuum sputtering system for the vector control of induced magnetic anisotropy in magnetic thin-film heterostructures. A stationary quadrupole electromagnet is used to generate a magnetic field, which rotates synchronously with the physical axes of the substrate in situ during sputtering. An arbitrary anisotropy direction can be set for successive ferromagnetic layers by adjusting the phase difference of substrate and field rotation. The ability to rotate the substrate during deposition and change anisotropy without breaking vacuum enables the deposition of magnetically soft heterostructures with arbitrary in-plane anisotropy axes.     

Morphology and amine accessibility of (3-aminopropyl) triethoxysilane films on glass surfaces

3-Aminopropyl) triethoxysilane (APTES) is commonly used to functionalize glass substrates because it can form an amine-reactive film that is tightly attached to the surface. In this study, we investigated the morphology and chemical reactivity of APTES films prepared on glass substrates using common deposition techniques. Films were prepared using concentrated vapor-phase deposition, dilute vapor-phase deposition, anhydrous organic-phase deposition and aqueous-phase deposition. All films were annealed, or cured, at 150 degrees C. The morphology of the films was quantified by fluorescence and by atomic force microscopy (AFM). The optical equivalent of the AFM images was computed and then used to directly compare optical and AFM images. Reactive amine density was determined by a picric acid assay and by a method that employed N-succinimidyl 3-[2-pyridyldithio]-propionamido (SPDP) cross-linked rhodamine. Fluorescence and AFM images showed that silane films prepared from dilute vapor-phase and aqueous-phase deposition were more uniform and had fewer domains than those deposited by the other methods. The ratio of picric acid-accessible amino groups to SPDP cross-linked rhodamine-accessible groups varied with the preparation method, suggesting reactant size-dependent difference in amine accessibility. We found a larger number of accessible amino groups on films prepared by vapor-phase deposition than on those prepared from solution deposition. The dilute vapor-phase deposition technique produced relatively few domains, and it should be a good choice for bioconjugation applications. There were appreciable differences in the films produced by each method. We suggest that these differences originate from differences in film rearrangement during annealing.     

MoSx/MoSx-Mo纳米多层膜的制备及其环境摩擦学特性

用直流磁控溅射在钢基体上交替溅射制备了MoSx/MoSx-Mo纳米多层膜。采用划痕仪测试薄膜与基体的结合力;采用SEM和XRD分析了纳米多层膜的形貌和显微结构;在球-盘式微摩擦试验机上测试了纳米多层膜在真空和潮湿空气中的摩擦学性能。结果表明,纳米多层膜的结合力优于纯MoS2膜。随着溅射沉积气压的升高,MoSx(002)面择优取向减弱,纳米多层膜的结合力下降。溅射气压0.24 Pa沉积的纳米多层膜在真空和潮湿空气中都呈现出最低的摩擦因数和磨损率,具有优异的环境摩擦磨损特性。     

负偏压对含氢类金刚石薄膜性能的影响

为了解决类金刚石(DLC)薄膜与金属基材间的界面结合强度问题,本研究采用直流等离子体增强化学气相沉积(DC-PECVD)技术,以等时长、不同偏压条件在45钢基材上沉积复合DLC薄膜.采用扫描电镜、原子力显微镜观察薄膜形貌;采用拉曼光谱仪分析薄膜成分;采用涂层附着力自动划痕仪测定膜基结合强度.结果表明:制备偏压从-600...     

微波等离子体CVD法在非平面基体上生长金刚石膜

介绍了在微波等离子体CVD装置中,用甲烷和氢气作为原料,在非平面基体(如钨丝、钻头、铣刀等)上生长金刚石薄膜的研究。在金刚石沉积过程中,由于"尖端效应",在基体的尖端很难沉积出金刚石膜。在采用金属丝屏蔽后,克服了"尖端效应",成功地在非平面基体上沉积出了金刚石膜。用扫描电镜(SEM)和激光拉曼光谱(Raman)分析了金刚石膜的形貌和质量。结果表明:非平面基体不同位置金刚石的晶形不同,晶粒比较细小,膜的质量较高。     

类富勒烯碳薄膜的结构演变及摩擦学性能研究

通过等离子体增强化学气相沉积技术,以不同沉积时间在硅表面上制备类富勒烯碳薄膜,探究类富勒烯碳薄膜结构演变和摩擦学性能随沉积时间变化规律。利用拉曼光谱和透射电子显微镜,考察类富勒烯碳薄膜微结构和表面形貌随沉积时间的变化。结果表明:碳薄膜内类富勒烯结构含量随沉积时间先增加后保持不变;采用沉积时间为3 h的类富勒烯碳薄膜组成摩擦配伍对,当载荷从8 N增加到14 N时,摩擦因数从0.013降至0.006,即随载荷的增加实现了由低摩擦向超滑的转变。这是因为摩擦诱使类富勒烯碳薄膜发生结构转变,并形成有利于减少摩擦的类球状或外部石墨壳层闭合的纳米颗粒。     

Influence of substrate orientation on the morphologyand orientation of LaNiO3 thin films

LaNiO₃ thin films were successfully prepared by a chemical method from citrate precursors. The LNO precursor solution was spin‐coated onto Si (100) and Si (111) substrates. To obtain epitaxial or highly oriented films, the deposited layers were slowly heated in a gradient thermal field, with a heating rate of 1° min^?1, and annealed at 700°C. The influence of different substrate orientations on the thin film morphology was investigated using atomic force microscopy and X‐ray diffraction analysis. Well‐crystallized films with grains aligned along a certain direction were obtained on both substrates. Films deposited on both substrates were very smooth, but with a different grain size and shape depending on the crystal orientation. Films deposited on Si (100) grew in the (110) direction and had elongated grains, whereas those on Si (111) grew in the (211) direction and had a quasi‐square grain shape.