Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

We present electrical evidence on asymmetric metal-insulator-semiconductor (MIS) based test structures in support of the presence of two different independent switching mechanisms in a resistive random access memory (RRAM) device. The valid mechanism for switching depends on the compliance capping (I_gl) for forming/SET transition. Our results convincingly show that low compliance based switching only involves reversible oxygen ion drift to and from oxygen gettering gate electrodes, while high compliance switching involves formation and rupture of conductive metallic nanofilaments, as verified further by our physical analysis investigations. We have observed this unique dual mode switching mechanism only in NiSi-based gate electrodes, which have a moderate oxygen solubility as well as relatively low melting point.     

不同PVD技术沉积TiN涂层的形貌和力学性能研究

本文采用阴极弧沉积、中频磁控溅射及二者的复合技术在GCr15基底上制备了TiN涂层。通过扫描电镜、XRD谱、微米划痕测试、硬度测试以及摩擦磨损测试对涂层的组织结构和力学性能进行了表征及对比。结构表明,采用复合磁控阴极弧技术制备的TiN涂层具有较好的综合性能,如较光滑的表面、较高的结合力和硬度,故磨损率较低。