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1.
Lindsey Yue Alicia Bayon Wojciech Lipiński 《American Institute of Chemical Engineers》2021,67(8):e17267
The effects of particle size and carbon dioxide concentration on chemical conversion in engineered spherical particles undergoing calcium oxide looping are investigated. Particles are thermochemically cycled in a furnace under different carbon dioxide concentrations. Changes in composition due to chemical reactions are measured using thermogravimetric analysis. Gas composition at the furnace exit is evaluated with mass spectroscopy. A numerical model of thermal transport phenomena developed previously is adapted to match the physical system investigated in the present study. The model is used to elucidate effects of reacting medium characteristics on particle temperature and reaction extent. Experimental and numerical results show that (1) an increase in particle size results in a decrease in carbonation extent, and (2) the carbonation step consists of fast and slow reaction regimes. The reaction rates in the fast and slow carbonation regimes increase with increasing carbon dioxide concentration. The effect of carbon dioxide concentration and the distinction between the fast and slow regimes become more pronounced with increasing particle size. 相似文献
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The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two
copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example
of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive
slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal
deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures
after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and
erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors
(ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements,
the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node. 相似文献
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Chemical mechanical polishing of polymer films 总被引:2,自引:0,他引:2
Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating
low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC
fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables
tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide
(ZrO2) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8.
In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance
of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information
presented in this paper is relevant to the CMP performance of many polymer dielectric materials. 相似文献
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用透射电子显微镜、扫描电镜对锑化镓材料切、磨、抛等加工工艺引入的表面损伤进行观察和检测。结果表明:切割加工是锑化镓单晶晶片表面损伤层引入的主要工序;锑化镓单晶切割片表面极不平整,有金刚砂所引起的较粗桔皮皱纹;其表面损伤层深度≤30μm;双面研磨的锑化镓晶片表面仍有较粗桔皮皱纹,但比切割片的要细,而且桔皮皱纹的深浅随磨砂(Al2O3)粒径的减小而变细变浅;晶片的表面损伤层深度(≤5μm)也随着磨砂粒径的减小而减小。一般情况下,其损伤层的深度约为磨砂粒径的1/2。机械化学抛光加工的锑化镓晶片表面的SEM像观察不到桔皮皱纹;其损伤层深度约55nm。 相似文献
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皮革去污上光用乳化蜡的研制 总被引:8,自引:0,他引:8
采用石蜡、微晶蜡为主要原料 ,经实验选出了以水为稀释剂的乳化型皮革去污上光蜡。实验优化的配方为石蜡 12 .5 g ,微晶蜡 8.0 g ,硬脂酸 8.5g ,三乙醇胺 5 .5 g ,水量 70 (涂用 )或 130 g(喷用 )。反应条件为乳化时间 4 0min ,搅拌速度 5 0 0~ 70 0r/min ,乳化温度 90℃。制得上光剂产品的去污性能可与用去污剂单独处理的效果相当 ,亮度可达 6 6 .7。 相似文献
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1 INTRODUCTIONThankstoitslowresistivityandhighelectromi grationresistance ,copperappearstobeaverypromisingsubstituteforaluminumininterconnec tions[1] .However ,copperisverydifficulttopattern ,andonlychemical mechanicalpolishing (CMP)tech nologycanresolvethisproblem[2 ] .CMPwasinitiallyinvestigatedandopenedoutfrom 1980soverseas[3] ,anditisthebestandonlyglobalplanarizationtech nologyatpresent ,butkeepsholdofbusinesssecretsallthetime .Fayolleetal[2 ] researchedCMPprocessofcopperwhereFe(… 相似文献