应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log I–V plot and the temperature-variable I–V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ∼10³ I_ON/I_OFF ratio, stable endurance cycles (10² cycles) and retention times (10⁴ s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ∼3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code.     

Narrow-band emitters in LED backlights for liquid-crystal displays

Over the last decade, narrow-band emitters have been recognized as key enablers for light emitting diodes (LEDs) backlights in liquid-crystal displays (LCDs) by competing with other display technologies. Today, efforts have been devoted to the exploration of narrow-band green/red luminescent materials with high quantum efficiency and excellent stability to optimize the performance of LED backlights. This review first presents an overview of the significant progress made in the development of narrow-band emitters used in LED backlights for LCDs with the emphasis on the versatile materials databases from doped phosphors to luminescent II–VI, III-V semiconductor quantum dots, and the recent halide perovskites nanocrystals and bulk metal halides. Subsequently, the correlation of structure-luminescence properties, and the device performance optimization of these emitters have been analyzed. The focus is placed on summarizing and comparing the remarkable examples of outdated and new narrow-band luminescent materials as potential candidates in LED backlights. Finally, the outlooks and challenges in discovering new narrow-band emitters have been proposed.     

半导体量子点中极化子的有效质量

研究了半导体量子点中极化子的有效质量.采用改进的线性组合算符方法,导出在电子-体纵光学声子(LO)强耦合时抛物量子点中极化子的振动频率、相互作用能和有效质量随受限强度和电子-声子耦合强度的变化.对RbCl晶体量子点进行了数值计算,结果表明,量子点受限越强,半导体量子点中强耦合极化子的振动频率和有效质量就越大;极化子的相互作用能随受限强度的增加先急剧增加,当达到极值后,随受限强度的增加而急剧减少     

半导体量子点最低导带态的量子限制效应

采用最新计算方法和半导体体材料传统量子计算结果,系统研究了14种半导体(Si,Ge,Sn,AlSb,GaP,GaAs,GaSb,InP,InAs,InSb,ZnS,ZnSe,ZnTe,CdTe)的立方量子点,得到了最低导带态的量子限制效应结果,我们把量子点对尺寸的依赖关系分为三类并详细讨论了它们的差别。     

磁场和库仑场对量子点中强耦合束缚极化子性质的影响

采用线性组合算符和幺正变换方法研究了磁场和库仑场对半导体量子点中强耦合极化子性质的影响.导出了强耦合束缚磁极化子的振动频率和基态能量与量子点的有效受限长度、库仑束缚势、磁场的回旋共振频率和电子-声子耦合强度的变化关系.数值计算结果表明:强耦合束缚磁极化子的振动频率和基态能量随量子点的有效受限长度的减小而迅速增大,随磁场的回旋共振频率的增加而增大.基态能量随电子-声子耦合强度和库仑束缚势的增加而减少.     

1.55μm Si基光电探测器的研究进展

从材料的生长、器件结构的选择等方面对1．55μm锗光电探测器的研究进展进行了综述，对Ge量子点共振腔增强型光电探测器的应用前景进行了探讨与展望。     

基于B点磁探针膛内电枢电弧长度与速度分布测量的计算机控制系统的研究

基于B点磁探针的测量原理，建立了电磁轨道炮膛内三维等离子体电枢电弧长度和电弧运动速度测量的数学模型，通过对该模型的分析给出了用于测量膛内电枢电弧长度和运动速度分布的相应推论。开发了用于测量膛内等离子体电枢电弧长度和速度的多通道计算机控制诊断系统，并进行了相应的试验研究。     

点阵汉字无级变倍算法

本文给出了由一种汉字字库得到任意大小汉字点阵的算法.该算法能对任意二值点阵图像进行放大平滑.简单放大是按字节进行运算,速度快;最佳平滑操作不是对简单放大后的点阵按位操作,而是根据原点阵的特性,在需要平滑的地方进行操作,需操作的位数不会超过图像总点数的5％.用该方法输出的汉字质量和速度都令人满意.     

CdSe量子点的制备与荧光特性研究

主要讨论了CdSe量子点的制备及荧光特性。CdSe量子点由化学方法制备，通过选择不同的反应时间得到不同尺度的量子点样品。用荧光方法研究了量子点样品在石英衬底和有机溶剂中的荧光特性。实验表明，这些量子点都有良好的荧光特性。还用无限深球方势阱模型分析了量子点样品的电子态，并根据荧光参数估算了量子点的尺度．各样品荧光峰具有一致的半峰宽，表明CdSe量子点的成核过程在反应开始时同时完成。