用化学腐蚀制备多孔硅太阳电池减反射膜的研究

采用HF HNO3溶液化学腐蚀 ,在硅片上制备减反射效果优良的多孔硅太阳电池减反射膜 ,借助原子力显微镜 (AFM)和X光电子谱 (XPS)对其表面形貌和成分进行观察 ,发现该膜与电化学阳极腐蚀得到的多孔硅具有相似性 ,其主要成分为非化学配比的硅的氧化物SiOx(X <2 )。采用带积分球的光度分光计 ,测得形成多孔硅减反射膜后 ,硅片表面反射率大大下降 ,,在波长 330～ 80 0nm范围反射率只有 1 5～ 2 9%。研究指出这种强减反射作用 ,与多孔硅具有合适的折射率及其多孔特性的光陷阱作用有关     

Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties

Light management and electrical isolation are essential for the majority of optoelectronic nanowire (NW) devices.Here,we present a cost-effective technique,based on vapor-phase deposition of parylene-C and subsequent annealing,that provides conformal encapsulation,anti-reflective coating,improved optical properties,and electrical insulation for GaAs nanowires.The process presented allows facile encapsulation and insulation that is suitable for any nanowire structure.In particular,the parylene-C encapsulation functions as an efficient antireflection coating for the nanowires,with reflectivity down to ＜1％ in the visible spectrum.Furthermore,the parylene-C coating increases photoluminescence intensity,suggesting improved light guiding to the NWs.Finally,based on this process,a NW LED was fabricated,which showed good diode performance and a clear electroluminescence signal.We believe the process can expand the fabrication possibilities and improve the performance of optoelectronic nanowire devices.     

高透钻面玻璃在线连续镀膜技术研究

使用立式连续直线镀膜生产线,采用真空磁控溅射技术在玻璃表面设计并镀制了Nb2O5/Si O2/Nb2O5/Si O2/CNx多层纳米硬质增透薄膜,并研究其透过率、硬度及理化性能。结果表明:通过引入线性阳极层离子源,控制并形成新的磁控溅射镀膜工艺,钻面玻璃产品的表面硬度达994.8 HV,是普通玻璃的2倍以上;在可见光透过率≥94%,具有一定的增透效果;经过酸/碱/溶剂/热处理后的透过率衰减ΔT0.1%,理化性能优良。     

Performance enhancement of multicrystalline silicon solar cells and modules using double‐layered SiNx:H antireflection coatings

Silicon nitride coating deposited by the plasma‐enhanced chemical vapor deposition method is the most widely used antireflection coating for crystalline silicon solar cells. In this work, we employed double‐layered silicon nitride coating consisting of a top layer with a lower refractive index and a bottom layer (contacting the silicon wafer) with a higher refractive index for multicrystalline silicon solar cells. An optimization procedure was presented for maximizing the photovoltaic performance of the encapsulated solar cells or modules. The dependence of their photovoltaic properties on the thickness of silicon nitride coatings was carefully analyzed. Desirable thicknesses of the individual silicon nitride layers for the double‐layered coatings were calculated. In order to get statistical conclusions, we fabricated a large number of multicrystalline silicon solar cells using the standard production line for both the double‐layered and single‐layered antireflection coating types. On the cell level, the double‐layered silicon nitride antireflection coating resulted in an increase of 0.21%, absolute for the average conversion efficiency, and 1.8 mV and 0.11 mA/cm² for the average open‐circuit voltage and short‐circuit current density, respectively. On the module level, the cell to module power transfer factor was analyzed, and it was demonstrated that the double‐layered silicon nitride antireflection coating provided a consistent enhancement in the photovoltaic performance for multicrystalline silicon solar cell modules than the single‐layered silicon nitride coating. Copyright © 2015 John Wiley & Sons, Ltd.     

光子晶体平板透镜表面减反结构

报道了用来抑制光子晶体平板透镜表面反射的优化表面结构.当入射角小于48°,透镜的表面反射率可降到0.3%以下.     

硫化锌基底上减反膜的镀制

硫化锌是红外波段重要的光学材料 ,在许多光电系统应用中 ,要求镀制适当的减反膜增加其透过率。介绍了硫化锌基底上的减反膜 ,该设计是用薄的氧化钇层作为与硫化锌的结合层 ,用一氧化硅和锗分别作为低、高折射率膜料的膜堆组成的。这种五层膜满足环境稳定性标准 ,在 3μm～ 5 μm波段的某应用范围内平均透过率即可达 96% ,并在 4.2 μm处有超过 98%的峰值透过率。     

低透煤层化学改性增透技术研究现状及展望

我国煤储层的赋存特征概括为微孔隙、强吸附、低渗透,这些赋存特征严重抑制了煤层气的开采,在此基础上,储层改造技术被广泛提出.针对低透气性煤层,国内外学者提出水力压裂、水力割缝、预裂爆破等储层增透技术,这些技术均存在增透范围小、裂隙闭合快、水锁效应等问题.有学者提出采用化学方法改造煤层,利用化学试剂改变煤层理化性质继而达到...     

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Several research groups are currently working on n‐ZnO/p‐Si heterojunction solar cell, and recently, Pietruszka et al [Sol. Energ. Mat. Sol. Cells 147 (2016) 164‐170] has reported the highest efficiency of 7.1% for this structure. The main challenge is to enhance the open circuit voltage up to theoretically predicted value of >0.6 V. This paper reports >20% improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by depositing amorphous‐ZnO at the interface at room temperature that possibly improves the passivation and/or avoids oxide formation at the interface during ZnO deposition. Two other materials, aluminum nitride and amorphous‐Si, have also been used as buffer layers to evaluate their effect on suppression of interface states. Furthermore, additional advantage of ZnO as an antireflector has been experimentally verified for different thicknesses of ZnO film.     

一种新型的光学增透膜——DLC及改性DLC薄膜

光学增透薄膜是一种很重要的光学材料，传统的MgF2和ZnS增透膜具有强度低的缺陷，已经不能满足现代科技进步的需要。回顾了近年来关于DLC薄膜和CN薄膜光学性能的研究情况，讨论了改性的DLC薄膜用做增透膜的可行性。从理论和实践两个方面进行了探讨，结果表明DLC薄膜和CN薄膜在光学增透领域具有广阔的应用前景。     

硅表面太赫兹抗反射亚波长结构设计

亚波长结构是特征尺寸小于工作波长的连续阵列浮雕结构,可看成是一层折射率均匀的介质层,仅存在零级的透射和反射衍射。基于等效介质理论和严格耦合波理论介绍了亚波长抗反射结构。为提高111μm波长太赫兹辐射(2.7THz)的透过率,在硅表面设计了亚波长抗反射结构。该结构的透射率和反射率由其浮雕结构的周期、高度和占空比确定。利用等效介质理论和严格耦合波理论对其结构参数进行了优化设计。当周期为27μm、高度为13μm、占空比为0.75时,得到了99.05%的太赫兹辐射透过率。