几何设计约束的表示与满足问题研究

对于智能ＣＡＤ系统来说，具有解决几何设计约束的功能是重要的。本文提出了一种面向对象的几何设计约束表示方法，它可以通过两种方式来表达。文中给出了一个约束传播算法，用于解决约束满足问题。     

机器人离散滑模变结构—PI控制器

本文采用离散滑模变结构控制方法，针对机器人提出了一种滑模变结构——ＰＩ控制方案，给出了该控制方案滑模存在条件及控制器设计方案。该控制器将离散滑模变结构控制和ＰＩ控制两者的优点有机地结合起来，理论分析和仿真结果表明该控制器能使机器人在各种复杂非线性动力学情况下具有良好的性能指标。这种控制器输出切换小，可以投入应用。     

自韧Si3N4陶瓷的显微结构及其性能研究

利用热压的方法制得室温断裂韧性和抗弯强度分别为１１．２ＭＰａ·ｍ￣（１／２）、８２３ＭＰａ，高温（１３５０℃）断裂韧性和抗弯强度分别为２３．９ＭＰａ·ｍ￣（１／２）、６３０ＭＰａ的自韧Ｓｉ＿３Ｎ＿４陶瓷。研究了显微结构和力学性能之间的关系。结果表明：玻璃相的含量、β－Ｓｉ＿３Ｎ＿４的长径比等对性能有重要影响。分析了自韧Ｓｉ＿３Ｎ＿４陶瓷的增韧机理，通过ＳＥＭ明显观察到Ｓｉ＿３Ｎ＿４中存在裂纹偏转、分支和β－Ｓｉ＿３Ｎ＿４拔出现象。     

Ge/Pd/n-GaAs低阻欧姆接触的SIMS分析

采用Ge／Pd／GaAs结构和快速热退火在n－GaAs上形成了低阻欧姆接触。利用H次离子质谱（SIMS）技术揭示和讨论了低欧姆接触形成的机理。比较了采用X 和CsX 信号检测的Ge，Pd，Ga和As的深度分布。结果表明采用CSX 可以提供更准确的结果和成分信息。     

立方氮化硼（c－BN）膜的制备、性能及应用

本文综合分析了立方氮化硼（ｃ－ＢＮ）膜的制备方法，介绍了ｃ－ＢＮ膜的结构及其机械、电学、光学和热学性能。最后总结了ｃ－ＢＮ膜在机械和电子领域的应用概况。     

A study on the transient characteristics of a self-regulating Joule-Thomson cryocooler

An experimental and numerical study of transient characteristics for the self-regulating Joule-Thomson (J-T) cryocooler is developed in the present work. The modelling of the bellows control mechanism and the simulation of the cooler system are developed. It is proved by experiment that the most important transient behaviours can be accurately predicted by the present numerical simulation. In order to rectify the instability problem of the bellows controlled J-T cooler, this study also proposes a revised design to improve temperature stability. The revised dual-orifice J-T cooler can effectively reduce the phenomena of unstable temperature and mass flow rate, but sacrifices the expected gas consumption rise by approximately 5 percent. Through experimental evaluation, it becomes obvious that this revised type cooler would be a better design.     

The mixed-type integral equations for transient elastodynamic plane crack problems

In the present paper, by use of the boundary integral equation method and the techniques of Green fundamental solution and singularity analysis, the dynamic infinite plane crack problem is investigated. For the first time, the problem is reduced to solving a system of mixed-typed integral equations in Laplace transform domain. The equations consist of ordinary boundary integral equations along the outer boundary and Cauchy singular integral equations along the crack line. The equations obtained are strictly proved to be equivalent with the dual integral equations obtained by Sih in the special case of dynamic Griffith crack problem. The mixed-type integral equations can be solved by combining the numerical method of singular integral equation with the ordinary boundary element method. Further use the numerical method for Laplace transform, several typical examples are calculated and their dynamic stress intensity factors are obtained. The results show that the method proposed is successful and can be used to solve more complicated problems.     

Fundamental solutions for half plane with an oblique edge crack

An elastic half plane with an oblique edge crack is considered in this paper. A pair of concentrated forces or point dislocations is assumed to act at an arbitrary point in the half plane. The half plane with an edge crack is first mapped into a unit circle by a rational mapping function so that the following analysis can be carried out on the mapped plane analytically. Then the complex stress functions are derived by separating the whole problem into two parts; one is the principal part corresponding to the infinite plane acted on by concentrated forces or dislocations, the other is the holomorphic part, which can be determined by making use of the property of regularity of complex stress functions. The stress intensity factors of the crack can be calculated with different inclined angles of the crack, and the displacement and stress components at an arbitrary position in the half plane can be expressed explicitly.     

Low-voltage BiCMOS dynamic minimum circuit using a parallelcomparison algorithm for fuzzy controllers

The authors present a low-voltage BiCMOS dynamic minimum circuit using a parallel comparison algorithm for VLSI implementation of fuzzy controllers. Using low-voltage BiCMOS dynamic circuits and a parallel comparison algorithm, a four-4-bit-input minimum circuit designed, based on a 1μm BiCMOS technology, shows a 9.5ns comparison time, which is a ×2.5 improvement in speed as compared to that based on CMOS technology     

沉积方式与基体材料对TiN薄膜内应力的影响

本文研究了TiN薄膜在化学气相沉积、物理气相沉积(包括热灯丝离子镀和多弧离子镀)以及等离子增强化学气相沉积等不同生成条件下的内应力变化。并通过改变钢及硬质合金基体的化学成份和表面状态。考察了基体材料对薄膜应力的影响。在此基础上,对薄膜内应力的形成机制进行了分析讨论。