Utilization of carbon derived from mustard oil cake (CMOC) for the removal of bivalent metal ions: Effect of anionic surfactant on the removal and recovery

Effect of sodium dodecyl sulfate (SDS) on the adsorption of Zn(II) and Ni(II) on CMOC was investigated. Addition of SDS favored the adsorption process. Adsorption process was found to be dependent on concentration, pH, dose, contact time and temperature. Thermodynamic studies showed that the process is endothermic and spontaneous. The spontaneity increases with increase in temperature. D–R isotherm suggests that the adsorption is chemical in nature. Kinetics studies showed better applicability of pseudo second order model. Reichenberg equation showed that pore diffusion was not only the rate determining step but some other process like film diffusion was also involved in the adsorption. These metals could be desorbed (75–80%) with 0.1 M HCl as eluent.     

Blood flow interpretation in femoral pseudoaneurysm

A femoral artery pseudoaneurysm is one complication of vascular intervention, and the incidence is increasing. Early management is then needed to avoid potential dangers from it. It differs from a true aneurysm in that it doesn＇t include any component of the vascular wall, and is not studied as much as a true aneurysm. Here, a model of a femoral pseudoaneurysm was made and a Computational Fluid Dynamics（CFD） simulation was verified with PIV experiment. Afterwards, a CFD simulation with two different models was performed to look for any findings which may help in developing new treatment methods.     

High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping

Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe₂‐ and MoS₂‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 10¹¹ for octadecyltrichlorosilane (OTS) p‐doping and ≈10¹¹ for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm² V^?1 s in OTS/WSe₂ transistors and from 28.75 to 142.2 cm² V^?1 s in APTES/MoS₂ transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 10⁴ A W^?1) in the OTS/WSe₂ devices and by a factor of ≈26.4 (from 219 to 5.75 × 10³ A W^?1) in the APTES/MoS₂ devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe₂ devices and ≈24.5‐fold in the APTES/MoS₂ devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.