Identifying clinical syndromes in a community sample of elderly persons.

By a strategy suggested by E. H. Uhlenhuth et al (1983), Diagnostic and Statistical Manual of Mental Disorders (DSM-III) referenced syndrome classifications were derived on the basis of the Hopkins Symptoms Checklist—42 scores of 1,131 elderly community residents. Overall syndrome prevalence rates were consistent with other epidemiologic data: 3.9% for depression, 1.0% for agoraphobia-panic, 2.6% for other phobia, and 6.9% for anxiety. Prevalence rates reflected expected sex differences and showed an age trend for other phobias. Considerable comorbidity among syndromes was observed. The association of the syndromes with patterns of psychosocial risk factors, prior diagnoses, and medication suggests that some but not all of the identified syndromes reflect clinically relevant classifications. If further developed, syndrome classifications based on self-report scales can provide inexpensive and clinically relevant measures of caseness. Required refinements of this approach are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Maximizing multiprocessor performance with the SUIF compiler

This article describes automatic parallelization techniques in the SUIF (Stanford University Intermediate Format) compiler that result in good multiprocessor performance for array-based numerical programs. Parallelizing compilers for multiprocessors face many hurdles. However, SUIF's robust analysis and memory optimization techniques enabled speedups on three fourths of the NAS and SPECfp95 benchmark programs     

掺杂Si-Al-K对钼粉及其烧结制品组织、性能的影响

研究了不同含量掺杂元素对钼粉形貌、烧结坯及钼丝微观组织的影响。研究表明，随着掺杂元素含量的升高，钼粉粒度逐步细化：在烧结过程中，掺杂元素在烧结坯形成非晶相的第二相粒子，并且随着掺杂元素含量的升高，第二相粒子的分布密度增大，使烧结坯晶粒得到细化；在加工过程中，烧结坯中的第二相粒子碎化为粒子串，粒子串分布于纤维晶界处，可改善钼丝性能。     

智能仪表的USB接口设计

分析了USB接口的特点，提出了在智能仪器仪表接口设计中使用USB接口的一种方案。介绍了使用8位或16位单片机设计智能仪器仪表的USB接口的方法和过程，包括接口控制芯片的选择、固件程序的开发、计算机USB驱动程序和应用程序设计等几个方面，并以CH372芯片为例给出了设计过程。应用结果表明该方案在智能仪表USB接口设计中具有实现简单、传输速度快、成本低等优点。     

Effect of sintering temperature on the microstructure and mechanical properties of Ti(C, N)-based cermets

Ti(C, N)-based cermets are produced by vacuum sintering at 1420, 1430, and 1440°C. The effect of sintering temperature on the microstructure and properties of Ti(C, N)-based cermets is studied. The microstructure and fracture morphology are investigated with a scanning electron microscope; mechanical properties such as transverse rupture strength and hardness are measured. The results show that, with increasing sintering temperature, the microstructure of cermets became uniform, and the rim phase structure is gradually completed. When the sintering temperature reaches 1440 °C, the rim phase becomes thicker and more brittle, grains start growing, and the mechanical properties decrease, indicating that a sintering temperature of 1440°C is too high.     

3D optical vortices generated by micro-optical elements and its novel applications

In this paper we report on recent development in the areas of optical vortices generated by micro-optical elements and applications of optical vortices, including optical manipulation, radial polarization and secure free space optical communi- cation     

用于光伏电池上的新型高分子PPV材料

聚对苯乙烯撑(PPV)由于具有优良的光电性质,是研究最多也是最有希望的光伏材料之一.然而单纯PPV作为光伏材料存在对太阳光利用率不高、载流子迁移率较低、稳定性不高等缺陷,制约了其实际应用.因此在围绕提高光伏效率和材料稳定性等基础上,近几年出现了大量PPV改性光伏材料.分析了新型PPV的各种改性措施的目的和相应的分子结构修饰方法,同时探讨了PPV光伏材料尚存在的问题和它作为高分子光电池材料的发展前景.     

A randomized controlled trial of a peer support intervention targeting antiretroviral medication adherence and depressive symptomatology in HIV-positive men and women.

Objective: To determine the efficacy of a peer-led social support intervention involving support groups and telephone contacts compared with standard clinical care to enhance antiretroviral medication adherence. Design: Randomized controlled trial with follow-up. Participants were 136 HIV-positive indigent mainly African American and Puerto Rican men and women recruited from an outpatient clinic in the Bronx, New York. The 3-month intervention was delivered by other HIV-positive clinic patients trained in addressing barriers to adherence and sensitively providing appraisal, spiritual, emotional, and informational adherence-related social support. Main outcome measures: Medical chart-abstracted HIV-1 RNA viral load, antiretroviral adherence according to electronic drug monitoring and participant self-report, and social support and depressive symptomatology. All assessments conducted at baseline, 3 months, and 6 months. Results: Intent-to-treat and as-treated analyses indicated no between-conditions intervention effects on the primary outcome of HIV-1 RNA viral load or any of the secondary outcomes at immediate postintervention or follow-up. Post hoc analyses within the intervention condition indicated greater intervention exposure was associated with higher self-reported adherence, higher social support, and lower depressive symptomatology at follow-up, even after controlling for baseline adherence. Conclusion: Null findings, consistent with the limited literature on efficacious highly active antiretroviral therapy (HAART) adherence interventions, may be due to insufficient exposure to the intervention, its low intensity, or the nature of the sample-a heterogeneous HAART-experienced group of patients with high levels of substance use and multiple other competing stressors. Overall, findings highlight the need for more comprehensive and intensive efforts to battle nonadherence. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

热膨胀对Rogowski线圈测量准确度的影响

Rogowski线圈主要用在测量交流电流、脉冲电流、电力系统中的暂态电流等方面.它具有输出功率低、结构简单、线性度良好等优点.当周围温度变化,热膨胀会改变线圈的截面面积.为了分析热膨胀对Rogowski线圈测量准确度的影响,引入了一个描述单位温度变化线圈感应电压的比率误差的参数,得出了计算热膨胀引起的电压比率误差的数学模型,分析了矩形截面线圈和圆形截面线圈以便于比较热膨胀对不同截面形状线圈测量准确度的影响.试验数据表明,电压的比率误差随温度的变化趋势与理论分析一致;由线圈的缠绕线和骨架引起的误差总和包括在测量误差之内.这对于设计高准确度的Rogowski线圈是非常有用的.     

生长温度对RF-MBE外延InAlGaN的影响

利用射频等离子体辅助分子束外延(RF-MBE)技术在蓝宝石衬底上外延了铟铝镓氮(InAlGaN)薄膜,研究了生长温度对RF-MBE外延InAlGaN薄膜的影响.X射线衍射测量结果表明,不同生长温度下外延生长的InAl-GaN薄膜均为单一晶向.卢瑟福背散射(RBS)测量结果表明,随着生长温度的提高,InAlGaN外延层中In的组分单调降低,Al和Ga的组分都有所增加.扫描电镜(SEM)的测试结果表明,在较高温度下(600和590℃)生长的In-AlGaN存在裂纹,580℃生长的四元合金表面比较平整,在570℃温度下生长的InAlGaN表面存在很多颗粒状突起.