InAIN薄膜MOCVD外延生长研究

为了研究不同压力和不同模板对InAlN薄膜外延生长的影响,分别选取以GaN为模板时生长压力为4.00、6.67和13.33 kPa,压力为4.00 kPa时模板为GaN和A1N这两组条件进行实验比较.研究发现,随着生长压力的增加,样品中In含量降低,样品的粗糙度则随压力的增加而增大;压力为4.00 kPa时,分别以摇摆曲线半高宽(FWHM)为86.97”的AIN和224.1”的GaN为模板,发现A1N模板上生长的InAIN样品(002)和(102)峰的FWHM值及表面粗糙度比上述GaN为模板生长的InAlN样品都要小很多.综合以上结果可初步得知:降低压力可以优化InAlN薄膜的表面形貌,增加In组分含量;采用高质量的AIN作模板能生长出晶体质量和表面形貌都比较好的InAlN薄膜.     

Influence of growth conditions on the V-defects in InGaN/GaN MQWs

The influence of the growth temperature,TMIn/TEGa andⅤ/Ⅲratio on the V-defects of InGaN/GaN multi-quantum wells（MQWs） has been investigated and discussed.When the TMIn flow increases from 180 to 200 sccm,the density of V-defects increases from 2.72×10¹⁸ to 5.24×10¹⁸ cm^-2,and the V-defect width and depth increase too.The density also increases with the growth temperature.The densities are 2.05×10⁸,2.72×10¹⁸ and 4.23×10⁸ cm^-2,corresponding to a growth temperature of 748,753 and 758℃respectively.When the NH₃ flows are 5000,6600 and 8000 sccm,the densities of the V-defects of these samples are 6.34×10¹⁸,2.72×10¹⁸ and 4.13×10¹⁸ cm^-2,respectively.A properⅤ/Ⅲratio is needed to achieve step flow growth mode.We get the best quality of InGaN/GaN MQWs at a growth temperature of 753℃TMIn flow at 180 sccm,NH₃ flow at 6600 sccm,a flatter surface and less V-defects density.The depths of these V-defects are from 10 to 30 nm,and the widths are from 100 to 200 nm.In order to suppress the influence of V-defects on reverse current and electro-static discharge of LEDs,it is essential to grow thicker p-GaN to fill the V-defects.     

插入n-AlGaN/GaN超晶格改善GaN基LED的droop效应

在GaN基LED的n-GaN和InGaN/GaN发光区之间插入n-AlGaN/GaN超晶格来改善其droop效应。注入电流低于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率低于没有插入层的LED。注入电流高于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率高于没有插入层的LED。插入n-AlGaN/GaN超晶格后,GaN基LED在-5V的反向电压下,漏电由2.568029μA减少到0.070543μA。人体模式下,插入n-AlGaN/GaN超晶格的LED在2000V的静电电压下的通过率从60%提高到了90%。LED droop效应的改善是因为n-AlGaN/GaN超晶格过滤了穿透位错并改善了电流扩展能力。     

Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer

With an n-AlGaN(4 nm)/GaN(4 nm) superlattice(SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer,the efficiency droop of GaN-based LEDs has been improved.When the injection current is lower than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL.However,as the injection current increases more than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency.The improvement of the efficiency droop of LEDs with n-AlGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities.The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543μA,and the electro-static discharge(ESD) pass yield of an LED at human body mode(HBM)-ESD impulses of 2000 V increases from 60%to 90%.     

P 型氮化镓层生长压力对InGaN/GaN基发光二极管性能的影响

The advantages of In Ga N/Ga N light emitting diodes(LEDs) with p-Ga N grown under high pressures are studied.It is shown that the high growth pressure could lead to better electronic properties of p-Ga N layers due to the eliminated compensation effect.The contact resistivity of p-Ga N layers are decreased due to the reduced donor-like defects on the p-Ga N surface.The leakage current is also reduced,which may be induced by the better filling of V-defects with p-Ga N layers grown under high pressures.The LED efficiency thus could be enhanced with high pressure grown p-Ga N layers.     

利用水平热壁CVD法生长的3C-SiC/Si的均匀性

利用新改进的水平低压热壁CVD设备,改变生长时的压力和H2流速,在50mm的Si(100)和(111)衬底上获得了3C-SiC外延膜,并对外延膜的结构均匀性、电学均匀性和厚度均匀性进行了分析.X射线衍射图中出现了强的3C-SiC的特征峰,其中3C-SiC的(200)和(111)峰的半高宽分别为0.41°和0.21°.3C-SiC外延膜方块电阻的均匀性最好可达2.15%.厚度均匀性可达±5.7%(σ/mean值).     

氮化物紫外LED研究与应用

随着Ⅲ-族氮化物材料与器件技术的不断发展,基于高Al组分氮化物的紫外LED受到广泛关注。本文主要介绍近年来紫外LED在外延、芯片及应用方面的研究进展。紫外LED的量子效率受晶体质量、掺杂效率、光提取等技术难题的制约,还有很大的发展潜力。随着研究的不断深入,紫外LED的性能将进一步提升,并在消毒净化、环境监测、光固化、无创光疗、非视距保密通信等领域得到广泛应用。     

RF-MBE生长的高Al势垒层AlGaN/GaN HEMT结构

采用RF-MBE技术,在蓝宝石衬底上生长了高Al组分势垒层AlGaN/GaN HEMT结构.用三晶X射线衍射分析得到AlGaN势垒层的Al组分约为43%,异质结构晶体质量较高,界面比较光滑.变温霍尔测量显示此结构具有良好的电学性能,室温时电子迁移率和电子浓度分别高达1246cm2/(V·s)和1.429×1013cm-2,二者的乘积为1.8×1016V-1·s-1.用此材料研制的器件,直流特性得到了提高,最大漏极输出电流为1.0A/mm,非本征跨导为218mS/mm.结果表明,提高AlGaN势垒层Al的组分有助于提高AlGaN/GaN HEMT结构材料的电学性能和器件性能.     

Ⅴ/Ⅲ比和生长温度对RF-MBE InN表面形貌的影响

由于生长InN所需平衡氮气压较高,而且InN分解温度比较低,因此在生长InN时In原子很容易在表面聚集形成In滴,使InN外延膜的表面形貌变差,影响InN外延膜质量的提高.通过研究Ⅴ/Ⅲ比和生长温度对RFMBE生长InN外延膜表面形貌的影响,发现Ⅴ/Ⅲ比和生长温度对InN外延膜表面In滴的量有重要影响.通过选择合适的Ⅴ/Ⅲ比和生长温度,得到了表面平整光亮、无In滴的InN外延膜.     

大功率氮化镓基LED关键技术研究

对大功率氮化镓基LED的关键技术,尤其是大芯片LED的结构设计,p电极的选择与制备,提取效率的提高以及倒装焊技术做了重点的介绍与讨论.