Alkylation of phenol with tert‐butyl alcohol over a catalyst synthesized from coal fly ash

The alkylation of phenol with tert‐butyl alcohol was carried out in a continuous flow reactor over a catalyst synthesized from fly ash. The activity of the synthesized catalyst was compared with those of other conventional zeolite catalysts such as 13X (NaX) and Hβ. Of all the catalysts tested, zeolite Hβ showed the highest activity in phenol conversion followed by the synthesized zeolite (HZOP‐31). The activity of commercial 13X zeolite was found to be same as that of HZOP‐31. Ce‐exchanged catalyst (CeZOP‐31) showed even better performance than 13X in the alkylation of phenol. The effects of different parameters such as reactant mole ratio, temperature and space velocity on phenol conversion and tert‐butyl phenol selectivity were studied. The effect of mass transfer resistance was found to be negligible within the feed rate range and particle size range studied. The apparent activation energy for the reaction of tert‐butyl alcohol over HZOP‐31 was determined as 30.1 kJ mol^?1. Copyright © 2006 Society of Chemical Industry     

Analysis of an Approximate Decorrelating Detector

In this paper an approximate decorrelating detector is analyzed on the basis of a first order approximation to the inverse crosscorrelation matrix of signature waveforms. The approximation is fairly accurate for systems with low crosscorrelations and is exact in the two-user synchronous case. We present an exact as well as approximate analysis of the bit-error-rate performance of this detector on a channel that is subject to flat fading, and also specifically for the case of random signature waveforms. The detector outperforms the conventional matched filter receiver in terms of BER. The approximate decorrelator (while not being near-far resistant like the decorrelating detector) is fairly robust to imperfections in power control. Power trade-off regions are identified which characterize the significant advantage that the approximate decorrelator provides over the matched filter receiver. The reduced complexity of the approximate decorrelator and performance gains over the conventional matched filter makes it a viable alternative for implementation in practical CDMA systems, in particular in those where the signature waveforms span many symbol intervals.     

Origin of room-temperature ferromagnetism in cobalt-doped ZnO

Thin films of ZnO doped with cobalt have been grown by the pulsed laser deposition (PLD) technique in different temperatures ranging from 500°C to 650°C. The films grown on sapphire c-plane single crystal were found to be highly epitaxial. Magnetic properties of these films were studied, and the films exhibited ferromagnetic characteristics at room temperature. Detailed structural and microstructural characterization was performed to correlate the fate of the magnetic impurities, i.e., cobalt, and the cause of magnetic properties. It is established from this work that the magnetic properties of these films are inherent to the system, and any presence of second phase/nanoclusters/precipitates are ruled out as the cause of magnetic properties. The techniques used to establish these were conventional and high-resolution transmission electron microscopy (HRTEM) along with electron-energy loss spectroscopy (EELS) and scanning transmission electron microscopy-atomic number (STEM-Z) contrast studies.     

Effect of UV/VUV enhanced RTP on process variation and device performance of metal gate/high-/spl kappa/ gate stacks for the sub-90-nm CMOS regime

We show that UV/VUV-enhanced rapid thermal processing (RTP) in combination with single-wafer processing using a single tool for the fabrication of metal gate/high-/spl kappa/ dielectric gate stacks not only improves overall device performance, but also leads to a significant reduction in process variation at the front end of the CMOS process flow for the sub-90-nm technology node. The gate stacks were fabricated under various UV/VUV conditions. Gate stacks processed under UV/VUV radiation during all processing steps displayed low leakage currents of the order of 10/sup -11/ A/cm/sup 2/. It is shown that the Al-Al/sub 2/O/sub 3/-Si gate stacks processed under UV/VUV conditions also display the lowest variations both in mean leakage current and mean capacitance, as compared to devices where UV/VUV was not used for all the processing steps. Therefore, it can be see that reliance on successive corrective iterations common to automatic process control or standard design simulation can be reduced significantly. As a result, UV/VUV-enhanced RTP has the potential to reduce the effect of process variations on overall device performance, thereby making the overall process more cost effective and time efficient and therefore improving yield and device reliability.     

Wireless access to the World Wide Web in an integrated CDMA system

We propose a wireless access mechanism for web traffic packets in an integrated wireless code-division multiple-access system that has both voice and Web traffic. The proposed scheme is a medium-access control layer/link layer (MAC/LL) scheduling algorithm that consists of a two level control: admission control and packet scheduling. The admission control restricts the number of users in the system such that quality-of-service requirements [target signal-to-interference ratio (SIR) and delay] for both voice and Web traffic can be met. The packet scheduling balances the system interference on a slot-by-slot basis such that the target SIRs can be achieved for all users (voice and Web browsing sessions) with a higher scheduling priority for voice. Designing admission control for Web users based on the average offered rate per session is difficult due to the high variations in the offered load generated by heavy tailed distributions for Web traffic. To overcome this problem, we propose an admission control algorithm that adaptively estimates the aggregate average load based on load measurements using a sliding observation window.     

Diagnosis of Wireless Sensor Networks in Presence of Permanent and Intermittent Faults

In this paper we consider the problem of distributed fault diagnosis in Wireless Sensor Networks (WSNs). The proposed Fault Diagnosis Algorithm (FDA) aims to handle both permanent and intermittent faults. The sensor nodes with permanent communication faults can be diagnosed by using the conventional time-out mechanism. In contrast, it is difficult to detect intermittent faults due to their inherent unpredictable behavior. The FDA is based on the comparison of sensor measurements and residual energy values of neighboring sensor nodes, exploiting their spatial correlations. To handle intermittent faults, the comparisons are made for \(r\) rounds. Two special cases of intermittent faults are considered: one, when an intermittently faulty node sends similar sensor measurement and similar residual energy value to some of its neighbors in all \(r\) rounds; another, when it sends these values, either or both of which deviates significantly from that of some neighbors in all \(r\) rounds. Through extensive simulation and analysis, the proposed scheme is proved to be correct, complete, and efficient to handle intermittent faults and hence, well suited for WSNs.     

Compressive deformation behavior of Al 2024 alloy using 2D and 4D processing maps

The hot deformation behavior of Al 2024 was studied by isothermal hot compression tests in the temperature range of 250–500 °C and strain rate range of 10⁻³ to 10² s⁻¹ in a computer-controlled 50 kN servo-hydraulic universal testing machine (UTM). The results show that the flow stress of Al 2024 alloy increases with strain rate and decreases after a peak value, indicating dynamic recovery and recrystallization. The processing map exhibits two domains of optimum efficiency for hot deformation at different strains, including the low strain rate domain at 500 °C and between 10⁻² and 10⁻¹ s⁻¹ and the high strain rate domain in 250 and 300 °C in the strain rate range of 10¹ to 10² s⁻¹. An attempt has been made in this article to generate a new hybrid 4D process map which illustrates contours of power dissipation and instability in the 3D space of strain rate, temperature, and strain.     

Self-nanoscaling of the soft magnetic phase in bulk SmCo/Fe nanocomposite magnets

Fabrication of bulk nanocomposite materials, which contain a magnetically hard phase and a magnetically soft phase with desired nanoscale morphology and composition distribution has proven to be challenging. Here we demonstrate that SmCo/Fe(Co) hard/soft nanocomposite materials can be produced by distributing the soft magnetic α-Fe(Co) phase particles homogenously in a hard magnetic SmCo phase matrix through a combination of high-energy ball milling and a warm compaction. Severe plastic deformation during the ball milling results in nanoscaling of the soft phase with size reduction from micrometers to ~15 nm. Up to 35% of the soft phase can be incorporated into the composites without coarsening. This process produces fully dense bulk isotropic nanocomposite materials with remarkable energy-product enhancement (up to 300%) owing to effective inter-phase exchange coupling.     

Strategies for Fast‐Switching in All‐Polymer Field Effect Transistors

Low‐cost printable field effect transistors (FETs) are typically associated with slow switching characteristics. Dynamic response of polymer field effect transistors (PFETs) is a manifestation of time scales involved in processes such as dielectric polarization, structural relaxation, and transport via disordered‐interfacial states. A range of dielectrics and semiconductors are studied to arrive at a parameter which serves as a figure of merit and quantifies the different processes contributing to the switching response. A cross‐over from transport limiting factors to dielectric limiting factors in the dynamics of PFETs is observed. The dielectric limited regime in the PFET dynamics is tapped in to explore high speed processes, and an enhancement of switching speed by three orders of magnitude (from 300 μs to 400 ns) is observed at channel lengths which can be accessed by low cost printing methods. The device structure utilizes polymer‐ferroelectrics (FE) as the dielectric layer and involves a fabrication‐procedure which assists in circumventing the slow dynamics within the bulk of FE. This method of enhancing the dynamic response of PFETs is universally applicable to all classes of disordered‐FE.