广播发射集散控制系统

本文介绍了广播发射台利用计算机技术、网络技术、遥控遥测技术、现代测试手段，对设备进行自动化控制与管理；实现设备技术指标自动测试，发射台无人值班、有人留守，建立机器的计算机档案制度，确保安全优质播出的方法和经验。     

Prenatal diagnosis of partial monosomy 13q associated with occipital encephalocoele in a fetus

The pre- and postnatal findings of a fetus with a de novo del(13)(pter-->q21:) and an occipital encephalocoele are described. Maternal serum alpha-fetoprotein (AFP) screening at 19 weeks' gestation demonstrated a high level of 2.5 multiples of the median (MOM) and ultrasonography at 27 weeks' gestation showed severe intrauterine growth retardation, cardiomegaly, an occipital encephalocoele, and a calvarial defect. Genetic amniocentesis revealed a karyotype of 46,XX,del(13)(pter-->q21:). The proband postnatally displayed additional abnormalities such as microphthalmia, hypertelorism, large low-set ears, and micrognathia. We discuss the association of central nervous system (CNS) malformations with 13q deletions and emphasize that pregnancies with neural tube defects warrant cytogenetic analysis, especially when additional fetal abnormalities and neonatal dysmorphism are observed.     

对氯甲苯氯化制2，4－二氯甲苯

用正交试验法研究了由对氯甲苯经催化氯化制取２，４－二氯甲苯的最佳反应条件。反应温度３３３Ｋ，催化剂《ＳｂＣｌ＿３）用量１．５％时，对氯甲苯转化率为５９．７％，２，４－二氯甲苯的收率为４５．１３％。     

标志树文法及其语法分析

树文法是一种高维文法，能够用来表达二维以上复杂对象的构造规则．在模式识别、图式语言等领域有着广泛的应用前景．本文在树文法有关概念基础上提出了标志树、连接标志、标志树文法等概念，构造了标志树的匹配和识别算法，并成功解决了标志树文法的语法分析器构造问题．     

核素心室造影舒张早期功能测定对冠心病估价

用平衡法核素心室造影自动左心室功能测定法检查了２３例正常人、３７例无心肌梗塞（ＣＡＤ－ＮＭＩ）和１４例有心肌梗塞（ＣＡＤ－ＭＩ）冠心病人左心室功能。结果表明，ＰＦＲ反映心肌缺血改变比其他心功能参数敏感。ＣＡＤ－ＮＭＩ组与正常对照组比较，ＰＦＲ的灵敏度为９４．５９％，Ｐ〈０．００１，其他参数的灵敏度依次为ＴＰＦＲ５４．０５％，Ｐ〈０．０１；ＰＥＲ５４．０５，Ｐ〈０．０１；ＴＰＥＲ４９．９５％，Ｐ〈０     

Process development and adhesion behavior of electroless copper on liquid crystal polymer (LCP) for electronic packaging application

Liquid crystal polymer (LCP) has potentially a very wide application as substrate material in electronic packaging applications because of its unique advantages. The work in this paper was performed to realize the metallization of LCP for the purpose of board fabrication, and to study the adhesion between deposited copper and LCP. A homogenous electroless plated copper layer on LCP with 4 to 5 /spl mu/m thickness was achieved, while it increased up to 40 /spl mu/m with the subsequent electroplating. The timescale of etching, deposit ion rate, and pH value were gradually changing during the plating process and the influences on copper layer quality were investigated. The adhesion force of the copper-LCP layer system was measured by a shear-off-method. Scanning electron microscopy (SEM) was used to check the surface morphology after etching and the interface after shearing on both the backside of the copper layer and the LCP side. The relationship between the shear-off adhesion of copper and the time of chemical etching before plating was examined, and the optimal etching time is discussed. Heat treatment after plating was used, and it was shown that this significantly improved the adhesion strength.     

前轮毂旋转弯曲疲劳断裂分析

采用化学分析，金相检验，力学性能测试及扫描电镜分析方法对轿车前轮毂早期断裂原因进行了分析。结果表明，冷却不足使组织中出现网状及小块状铁素体，导致硬度偏低，加之磨削加工痕迹较粗是引起前轮毂早期断裂的原因。     

Viterbi译码器的硬件实现

介绍了一种Vkerbi译码器的硬件实现方法。设计的基于硬判决的Viterbi译码器具有约束长度长（9)、译码深度深（64)的特点。为了兼顾硬件资源与电路性能两个方面，在设计中使用了4个ACS单元，并根据Xilinx Virtex系列FPGA的结构特点．利用FPGA内部的BlockRAM保存汉明距离和幸存路径，提高了译码速度。     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

An analytical grain-barrier height model and its characterizationfor intrinsic poly-Si thin-film transistor

An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range