基于衰变链计算的裂变产物缓发γ能谱分析

在军控核查技术中，缓发γ能谱是核材料的“指纹”。为计算和分析铀裂变产物的缓发γ能谱，本文将各种类型的衰变链简化为基态线性链和激发态线性链，推导了零时前后各级核素数目的变化公式，建构了计算缓发γ射线能谱的C语言程序代码，并通过实验对理论推导进行了验证。通过分析几种核素的缓发γ射线计数发现，计算结果与实验数据吻合较好。     

Effects of structural parameters on water film properties of transpiring wall reactor

Corrosion and salt deposition problems severely restrict the industrialization of supercritical water oxidation. Transpiring wall reactor can effectively weaken these two problems by a protective water film. In this work, methanol was selected as organic matter, and the influences of vital structural parameters on water film properties and organic matter removal were studied via numerical simulation. The results indicate that higher than 99% of methanol conversion could be obtained and hardly affected by transpiration water layer, transpiring wall porosity and inner diameter. Increasing layer and porosity reduced reactor center temperature, but inner diameter's influence was lower relatively. Water film temperature reduced but coverage rate raised as layer, porosity, and inner diameter increased. Notably, the whole reactor was in supercritical state and coverage rate was only approximately 85% in the case of one layer. Increasing reactor length affected slightly the volume of the upper supercritical zone but enlarged the subcritical zone.     

Spreading and Curing Behaviors of a Thermosetting Droplet-Silicone on a Heated Surface

Thermosetting materials are widely used as encapsulation in the electrical packaging to protect the core electronic components from external force, moisture, dust, and other factors. However, the spreading and curing behaviors of such kind of fluid on a heated surface have been rarely explored. In this study, we experimentally and numerically investigated the spreading and curing behaviors of the silicone(OE6550 A/B, which is widely used in the light-emitting diode packaging) droplet with diameter of ～2.2 mm on a heated surface with temperature ranging from 25 ℃ to 250 ℃. For the experiments, we established a setup with high-speed camera and heating unit to capture the fast spreading process of the silicone droplet on the heated surface. For the numerical simulation, we built a viscosity model of the silicone by using the Kiuna's model and combined the viscosity model with the Volume of Fluid(VOF) model by the User Defined Function(UDF) method. The results show that the surface temperature significantly affected the spreading behaviors of the silicone droplet since it determines the temperature and viscosity distribution inside the droplet. For surface temperature varied from 25 ℃ to 250 ℃, the final contact radius changed from ～2.95 mm to ～1.78 mm and the total spreading time changed from ～511 s to ～0.15 s. By further analyzing the viscosity evolution of the droplet, we found that the decreasing of the total spreading time was caused by the decrease of the viscosity under high surface temperature at initial spreading stage, while the reduction of the final contact radius was caused by the curing of the precursor film. This study supplies a strategy to tuning the spreading and curing behavior of silicone by imposing high surface temperature, which is of great importance to the electronic packaging.     

Numerical Investigation of the Capture of Polydisperse Particles by Charged Droplets

The capture of particles by charged droplets was simulated by considering the electrostatic interactions of droplet-droplet and droplet-particle. The results indicate that the electrostatic repulsion between droplets leads to a dynamic accumulation mode of particles. However, the droplet spacing has an insignificant effect on the capture efficiency when the electrostatic deposition predominates. The increase of droplet charge remarkably improves the capture efficiency, in which the capture of fine particles accounts for the largest proportion. Compared to the droplet charge, the droplet size shows a limited improvement in the capture efficiency. Reducing the droplet velocity prolongs the capture time instead of enhancing the capture capacity per unit time, thereby improving capture efficiency.     

气藏型储气库注气期试井分析探讨

针对气藏型储气库注采井注采过程中储层物性参数影响因素不明确、注采能力不对称的问题。基于相国寺储气库井下连续油管试井测试结果,提出储气库注气期“温降效应”、“变表皮效应”的概念,分析了储气库注采过程中温降效应、变表皮效应以及储层应力敏感对注采的影响。通过气藏型储气库注气期试井分析技术,研究各因素在试井曲线上的响应特征以及对试井解释参数的影响。结果表明:①相对于采气期试井测试,注气期测试得到的储层物性参数具有同样的参考价值;②储气库温降效应对于试井解释结果的影响可忽略不计,而在不同注采运行周期内,变表皮效应以及应力敏感效应影响差异较大;③编制储气库注采运行方案时应充分考虑变表皮效应与应力敏感的影响,在不同注采运行周期内开展试井测试获取准确的储层参数值。研究成果为储气库试井测试与解释提供了重要的研究依据和理论指导。     

Crystallographic characteristics and microwave dielectric properties of Ni-modified MgTa2O6 ceramics

Ni²⁺ modified MgTa₂O₆ ceramics with a trirutile phase and space group P4₂/mnm were obtained. The correlations between crystallographic characteristics and microwave dielectric performance of MgTa₂O₆ ceramics were systematically studied based on the chemistry bond theory (PVL theory) for the first time. The results indicate that the introduction of Ni²⁺ causes a change in polarizability and the Mg–O bond ionicity, which contributes to the variation of dielectric constant. Moreover, the lattice energy, and packing fraction, full width at half maximum of the Raman peak of Ta–O bond, as the quantitative characterization of crystallographic parameters, regulate the dielectric loss of MgTa₂O₆ ceramics in GHz frequency band. In addition, the study of sintering behavior shows that the densification and micromorphology are the crucial factors affecting the microwave dielectric performance. Typically, Ni²⁺ doping on the A-site of MgTa₂O₆ can effectively promote the Q × f values to 173,000 GHz (at 7.43 GHz), which ensures its applicability in 5G communication technology.     

Investigation of crystal characteristics,Raman spectra,and microwave dielectric properties of Mg1-xZnxTa2O6 ceramics

Mg_(1-x)Zn_xTa₂O₆ (x = 0.00?0.08) dielectric ceramics were synthesized via the traditional solid-state reaction method. We used XRD and Rietveld refinement to demonstrate that a pure Mg_(1-x)Zn_xTa₂O₆ phase with trirutile structure was formed. Zn²⁺ substitution helped to decrease the Raman full width at half width of the A_1g mode at 703 cm^?1, which resulted in an increase in the order and rigidity of the TaO₆ octahedron, this in turn contributed to improving the Q×f values. Additionally, the introduction of Zn²⁺ significantly promoted grain growth and increased the dense, and the molecular polarizability, these factors lead to a higher permittivity. Moreover, enhanced Ta-O bond energy resulted in a more stable TaO₆ octahedron in the Mg_(1?x)Zn_xTa₂O₆ system, which contributed to enhanced τ_f values via substitution of Zn²⁺ doped on the A-site. Correspondingly, the microwave dielectric properties were significantly improved for 0.04-doped samples, obtaining: ε_r = 27, Q × f = 185,000 GHz (at 7.47 GHz), τ_f =32 ppm/°C.     

Beam and image experiment of beam deflection electron gun for distributed X-ray sources

Distributed X-ray sources comprise a single vacuum chamber containing multiple X-ray sources that are triggered and emit X-rays at a specific time and location. This process facilitates an application for innovative system concepts in X-ray and computer tomography. This paper proposes a novel electron beam focusing, shaping,and deflection electron gun for distributed X-ray sources.The electron gun uses a dispenser cathode as an electron emitter, a mesh grid to control emission current, and two electrostatic lenses for beam shaping, focusing, and deflection. Novel focusing and deflecting electrodes were designed to increase the number of focal spots in the distributed source. Two identical half-rectangle opening electrodes are controlled by adjusting the potential of the two electrodes to control the electron beam trajectory, and then, multifocal spots are obtained on the anode target. The electron gun can increase the spatial density of the distributed X-ray sources, thereby improving the image quality. The beam experimental results show that the focal spot sizes of the deflected(deflected amplitude 10.5 mm)and non-deflected electron beams at full width at half maximum are 0.80 mm 90.50 mm and 0.55 mm 90.40 mm, respectively(anode voltage 160 kV; beam current 30 mA). The imaging experimental results demonstrate the excellent spatial resolution and time resolution of an imaging system built with the sources, which has an excellent imaging effect on a field-programmable gate array chip and a rotating metal disk.