Effect of thermal treatment on ZnO substrate for epitaxial growth

ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. We developed a thermal treatment method to eliminate surface damage on the 0 face of ZnO (0 0 0 1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (0 0 0 1) annealed at 1050 °C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution X-ray diffraction measurements have been employed to investigate the effect of annealing on ZnO substrates.     

高阻值Cd1-xZnxTe晶体的生长及其性能测试

通过适当的工艺措施，采用Bridgman法生长了直径为30mm的X射线及γ射线探测器级的Cd.9Zn0．1Te晶锭．测试结果表明：该晶锭结晶质量良好，位错密度低，成分均匀，杂质含量低，红外透过率和电阻率都十分接近本征Cd.9Zn0．1Te的值．并从晶体的生长特性、缺陷和杂质的角度，分析了生长高性能晶体的条件，研究了生长Cdl-xZnxTe晶体的x值与缺陷和杂质浓度之间的关系．     

自适应密集预测的模型算法控制

本文中提出了一种新的预测控制策略:在一个模型采样周期内(本文中定义)进行数次预测控制。     

杭-宁输气管道工程定向钻穿越设计浅析

杭州-宁波天然气输气管道工程（简称杭-宁输气管道工程）是浙江省天然气长输管网主干线之一，根据工程河流穿越众多、渠塘穿越频繁的特点，对杭-宁输气管道工程水域穿越的特点和穿越方式作了总结；重点分析了水域定向钻穿越设计及需要注意的问题，为今后浙江省天然气管网建设的水域穿越设计作了探讨。     

Al/SiO_2/Si表面Al_2O_3纳米图形的AFM阳极氧化制备方法

采用AFM阳极氧化方法,在控制AFM探针尖端电压和扫描方式的条件下,在Al/SiO2/Si表面制备了Al2O3纳米图形,图形最小尺寸为70nm.研究了表面吸附水层存在下AFM阳极氧化机理.实验结果表明AFM阳极氧化是制备金属氧化物半导体纳米器件的较好方法     

Robust Digital Terrestrial TV Broadcasting System with Error-Resilient Schemes

In this paper, error-resilient schemes are proposed to support robust video transmission for digital terrestrial TV broadcasting (DTTB). In particular, a temporal error concealment incorporated with a low-complexity block-matching is developed, achieving an effective reception of predictive pictures in harsh terrestrial environment. Special algorithms are also designed for isolated I-pictures. Moreover, combined with an intra/inter case prediction, an adaptive error concealment scheme is further contrived to fit for different error conditions. Extensive simulations have been conducted under various DTTB channel conditions, even with a very high packet error rate, to verify the effectiveness of the proposed schemes.     

转动玻璃圆筒激光器

本文介绍了转动玻璃圆筒激光器的设计及实验结果,得到了脉冲能量为13J,重复频率为15Hz的激光输出。电光转换效率为2.2％,斜效率为3.4％。     

催化裂化干气回收乙烯用于制备环氧乙烷的研究

叙述了在YS型银催化剂作用下，利用催化裂化干气回收的乙烯制备环氧乙烷的实验研究。结果表明：在银催化剂上催化氧化生成环氧乙烷的过程中，使用回收的乙烯，催化剂的初选择性可达80％；在保持环氧乙烷时空产率不变，经过2000h催化剂稳定性试验后，选择性下降了3—4个百分点，反应温度上升约10℃，与用聚合级乙烯为原料进行比较，催化剂初选择性低2—3个百分点、稳定性略差。该结果为用回收乙烯生产环氧乙烷提供了试验依据。     

Preparation and gas-sensing characteristics of nanocrystalline spinel zinc ferrite thin films

Zinc ferrite is a promising sensor material. In this paper, thin films of nanocrystalline zinc ferrite were deposited on alumina substrates by nebulization of a 0.01-M solution of a mixture of ZnCl/sub 2/ and FeCl/sub 3/ in ethanol (Zn:Fe=1:2) followed by pyrolysis and annealing in flowing air. The resulting films were characterized by X-ray diffraction and scanning electron microscopy, and the gas-sensing properties of as-deposited films were also investigated.     

A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.