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71.
Analysis of non-stationary electrochemical oscillations emerges utilization of the techniques allowing an observation of time evolution of their parameters such as instantaneous frequency, amplitude or frequency band. An algorithm of extraction of these parameters can be based on one of linear or quadratic time-frequency representations of oscillations record. In this paper, the authors present representatives of such transformations (Choi-Williams and Cone-shaped) originating from one of the most popular joint time-frequency energy distribution—Wigner-Ville distribution. Short introduction to the mathematics of the topic discussed is provided, then the authors present an example of application in the analysis of current oscillations of copper dissolution process. 相似文献
72.
73.
一种零电压转换有源功率因数校正电路的研究 总被引:1,自引:0,他引:1
提出了一种基于UC3854的零电压转换有源功率因数校正(ZVT-APFC)的控制电路实现方案,介绍了ZVT电路工作原理,着重分析了由分立元件构成的辅助开关管的驱动电路,通过实验证实了驱动电路的稳定性和可靠性,并通过效率比较验证了ZVT-APFC电路的优良性能。与采用UC3855的电路相比,该电路方案具有简单、可靠、成本低等优点。 相似文献
74.
The present empirical investigation had a 3-fold purpose: (a) to cross-validate L. R. Offermann, J. K. Kennedy, and P. W. Wirtz's (1994) scale of Implicit Leadership Theories (ILTs) in several organizational settings and to further provide a shorter scale of ILTs in organizations; (b) to assess the generalizability of ILTs across different employee groups, and (c) to evaluate ILTs' change over time. Two independent samples were used for the scale validation (N1 = 500 and N2 = 439). A 6-factor structure (Sensitivity, Intelligence, Dedication, Dynamism, Tyranny, and Masculinity) was found to most accurately represent ELTs in organizational settings. Regarding the generalizability of ILTs, although the 6-factor structure was consistent across different employee groups, there was only partial support for total factorial invariance. Finally, evaluation of gamma, beta, and alpha change provided support for ILTs' stability over time. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
75.
76.
通过对减振器结构设计的理论分析,建立了减振器的数学模型,同时通过设计的模拟装置对减振效果进行了实测,效果良好。 相似文献
77.
Oleuropein Inhibits LDL Oxidation Induced by Cooking Oil Frying By-products and Platelet Aggregation Induced by Platelet-Activating Factor 总被引:1,自引:0,他引:1
Oleuropein, a polyphenolic glucoside, constituent of olive fruit and oil, has been previously shown to exhibit, in vitro, potent properties as a biological antioxidant. In the present paper, two new properties are demonstrated in vitro as well, concerning its vascular protection activity, against the atheromatic lesion formation and its blood antithrombotic effect. Firstly, it was found that the oxidation of low-density lipoproteins (LDL), induced by different quantities of total polar materials (TPM), was inhibited by 10 μ M (final concentration) of oleuropein, revealing approx. 50% protection. Secondly, platelet-rich human plasma aggregation, induced by either the platelet-activating factor or adenosine diphospate or arachidonic acid, was inhibited by oleuropein. The 10 μ M (final concentration) of oleuropein was proven to be the most effective among the tested concentrations against LDL oxidation, while an IC50=0.41 mM was calculated for its inhibitory activity against platelet aggregation induced by 0.7 μ M platelet-activating factor. 相似文献
78.
79.
本文叙述了反应堆保护系统停棒与汽轮机降功率子系统的系统功能、保护参数和秦山核电站控制棒组插入监测器的设计与参数选择,确定了控制棒提升上极限值和在不同工况下棒插入低位、低-低位整定值,并在热态零功率条件下加以验证。试验证明参数选择是合理的,为功率运行阶段提供了数据。 相似文献
80.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献