Comparison between normal and reverse thin crystalline silicon solar cells

The newly developed ingot growing techniques, as the three-grain and the columnar multigrain ingot processes, are now offering the possibility of slicing thinner wafers (≤ 100 μm). In this paper we present the results obtained on p type large area (≥ 100 cm²) and 100 μm thick wafers by using both conventional and reverse cell manufacturing technologies.The conventional cells are provided with aluminium or boron BSF plus screen-printed silver mirror or a silver-aluminium net; the reverse cells have a FSF and the deep back junction completely covered by a screen-printed or CVD silver layer.The constructing parameters have been chosen on the base of one and two dimensions modeling and both raw material and devices have been completely characterized.This work shows that very thin wafers do not introduce serious problems for the conventional manufacturing of solar cells. The efficiencies of the normal and of the reverse cells are found to be comparable and are of the same order than those of thicker cells, however at a significant lower cost. The main obtained result has to be related to the demonstration of a cell manufacturing feasibility starting from very thin wafers.     

MOSFET亚阈特性分析与低温按比例缩小理论的研究

器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件限在一定的水平，本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器的优化设计，从而更大程度在提高电路与系统性能具有重要的指导意义。     

直读光度法测定钼铁中的硅

试样经草酸、双氧水分解后，以盐酸羟胺破坏掉多余双氧水。以标准样品作参比，在硫酸－柠檬酸介质中，用钼酸铵显色，抗坏血酸还原，生成稳定的硅钼蓝。此方法可测定１．０％以下的硅，具有快速、准确、灵敏度高等优点。     

Microstructure of Silicon Carbide Whiskers Synthesized by Carbothermal Reduction of Silicon Nitride

The microstructure of silicon carbide whiskers synthesized by carbothermal reduction of silicon nitride has been studied using transmission electron microscopy. All of the whiskers examined are single crystals, and grow in the (111) crystallographic direction. Two different forms of stacking faults and microtwins were observed; in one the planar defects are normal to the whisker growth direction, and the other has the defect planes at an angle of about 70° to the growth axis, while both forms of the defects are on the [111] closed-packed planes. Without the addition of catalyst, droplets containing metallic impurities were not found at the tips of the whiskers synthesized by the present process. A core and outer regions were observed in the single-crystal whiskers, which may be evidence that the whiskers were formed by a two-stage mechanism.     

湘潭新大粉末冶金设备制造有限公司的一体化真空烧结炉

简要介绍了湘潭新大粉末冶金设备制造有限公司研制的一体化真空烧结炉的炉子结构、脱蜡系统、工艺气体的引入系统、设备的控制系统以及炉子性能的鉴定结果。     

高速线材轧制用硬质合金轧辊的质量控制

通过对高速线材轧制用硬质合金轧辊 (轧槽 )失效机理的分析 ,提出了高速线材轧制用硬质合金轧辊质量控制的基本方法 ,认为轧辊质量控制的关键在于轧辊材料设计、生产工艺过程控制、轧制过程、轧机工况、轧辊储运装卸以及轧制环境因素的控制 ,并建议尽早制订相关的材料和产品质量标准。     

奥氏体耐热钢21-4N碳化物析出行为研究

通过对奥氏体耐热钢21-4N碳化物析出行为的研究,探讨了对性能的影响,提出了改善其综合性能的措施和方法.     

我国硬质合金工业发展现状与资源保护

分析了我国硬质合金工业的发展现状,论述了战略资源保护的重要性,提出了增强我国硬质合金企业核心竞争力的方法及途径。     

Silicon power MOSFET at low temperatures: A two-dimensional computer simulation study

Understanding how the structure of the unit-cell affects the cryogenic performance of a Si power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is an important step toward optimizing of the device for cryogenic operations. In this paper, numerical simulations of the Si power Double Diffused MOSFET’ (DMOS) are performed at room temperature and cryogenic temperatures. Physically based models for temperature dependent silicon properties are employed in the simulations. The performances of power DMOS’ with various unit-cell structures are compared at both room temperature and low temperatures. The effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for room temperature operation can be further optimized at cryogenic temperatures.     

大型预焙铝电解槽使用碳化硅砖与普通碳砖复合块的探讨

碳化硅砖和碳化硅砖与普通碳砖复合侧块，在上世纪末期我国铝电解槽上开始推广应用。使用后各厂家普遍发现碳化硅砖及碳化硅砖与普通碳块复合侧块均出现不同程度的断裂、上抬和脱落现象，该文对断裂、上抬和脱落原因进行了分析，并提出了改进措施。