Fast and Compact 16 by 16 Cellular Neural Network Implementation

The paper presents a Cellular Neural Network implementation based on a high gain sigmoid operation. The required simplifications to the original theory are described that allow the use of high gain. With this design black and white images can be processed. The basic building blocks in a cell are described. A 16×16 cells network has been designed and processed with 1.2 micron CMOS technology. Measurement results which show the operation of the network are presented.     

全双极WTA模型的改进及其实现

提出了一种相似度的新定义，使双极ＷＡＴ模型的实现更加简洁明了。增加一个阈值使系统能判别非存储模式或因其信息量过低而无法鉴定的输入模式，阈值的大小与要求的容错能力有关。双极相似度及阈值通过光学方法实现。阈值的光学实现使系统仍具有照明不变性。通过电路实现取及ＷＴＡ网络的迭代运算。     

动态分频器技术

本文介绍了动态分频器的基本原理；详细叙述了动态分频器电路及其主要工艺技术；综述了国外动态分频器的发展动态。     

宽带电流反馈运算放大器OPA623及其应用

以电流模技术和互补双极工艺制造的集成电路具有良好的高频性能，用其构成的电流反馈放大器频带宽，转换速率高，在视频和射频信号的放大和处理以及高速数字通信系统中都得到广泛的应用。通过OPA623集成“运放”，简要介绍电流反馈放大器的原理、性能及其在高清晰度电视及有线电视传输中的应用。     

A new alloy design concept for austenitic stainless steel with tungsten modification for bipolar plate application in PEMFC

The feasibility of a new alloy design concept utilizing the principle of ‘tungsten bronze effect’ is critically evaluated for the development of metallic bipolar plates for proton exchange membrane fuel cell (PEMFC). An austenitic stainless steel (ASS) is modified with W and La to improve the stability of the passive film in an acidic environment as well as to reduce the contact resistance by the tungsten bronze effect. The experimental ASS containing W and La was evaluated in a simulated PEMFC environment of H₃PO₄ and H₂SO₄ solutions at 80 °C, and the electrical property was evaluated by performing a contact resistance test. The test results show that the ASS modified with W and La has good passive film stability for corrosion resistance and low contact resistance. The X-ray photoelectron spectroscopy (XPS) analysis clearly suggests the possibility of the tungsten bronze effect from the change in valency state of W⁶⁺ to W⁵⁺ in the passive film formed on the modified ASS. The feasibility of a new alloy design concept utilizing the ‘tungsten bronze effect’ is well demonstrated; however, more study is highly required for the development of metallic bipolar plates of PEMFC.     

Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process

Through revising the process of charge collection for reversed drain-bulk junction,a bias-dependent SPICE model is proposed which includes the bipolar amplification effect that cannot be ignored in PMOS.The model can capture the plateau effect,and produce current and voltage pulse shapes and widths that are consistent with TCAD simulation.Considering the case of connecting load,it is still valid.For combination and sequential logic circuits,the SET pulsewidths and LET upset threshold from SPICE model are consistent with TCAD simulations.     

Influence of base resistance on extracting thermal resistance for SiGe HBTs

In this article, the influence of base resistance on extracting thermal resistance for SiGe heterojunction bipolar transistors is studied and an improved approach for determining the junction temperature and thermal resistance is presented. The proposed method for extracting thermal resistance is based on the temperature sensitivity of the base–emitter (B–E) voltage when the device is biased with a fixed emitter current density. This approach not only takes into account the self‐heating during the different ambient temperature measurement but also revises the empirical equation of B–E voltage due to the influence of base resistance during the power dissipation increment measurement. Results are obtained for devices with different emitter lengths and fingers. Compared with the conventional method, the thermal resistance is about up to 15% improvement for the device with 0.3 × 1.9 μm² emitter area and 13.8% for the device with 0.3 × 13.9 μm² emitter area. The accurate thermal resistance implemented in HICUM model has resulted in better fit for transistor output characteristics. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.     

直流预压对针板电极下XLPE中空间电荷及电树枝的影响

空间电荷是影响高压直流电缆绝缘电树枝特性的主要原因之一。基于双极性载流子输运模型,对±20 kV、±22.5 kV和±25 kV直流预压下3 600 s内二维针板电极模型空间电荷分布进行仿真分析,并对比分析空间电荷分布与直流接地电树枝引发特性。结果表明：空间电荷浓度及注入深度随预压幅值及时间的增加而增大;直流接地电树枝引发长度随预压时间及幅值的增加而增加。空间电荷注入深度与电树枝引发长度两者之间高度相似。接地电树枝引发特性存在差异的主要原因是针尖附近空间电荷的分布特性。     

IGBT串联均压方法综述

绝缘栅双极性晶体管IGBT(insulated gate bipolar transistor)在高电压场合应用时需串联使用满足电压需求。由于器件内部的性能差异和外围电路参数不一致等,引起IGBT模块之间电压不均衡问题,威胁其运行安全。综述了国内外IGBT串联均压方法的发展及其研究现状。根据均压方法机理的不同,将IGBT串联均压方法分为被动均压方法和主动均压方法两种,进一步将主动均压方法归纳为无源控制方法和有源控制方法两类。根据各类方法的基本电路拓扑分析了均压原理,梳理了不同方法在电路拓扑、参数选择和控制策略等方面的优化和最新进展。通过均压效果、附加损耗和可靠性等多方面对不同均压方法进行对比,被动均压方法拓扑简单不需外加控制电路更适合在低频应用场合,在高频应用场合中,准有源栅极控制法以单驱动与无源器件相结合的方式,具有良好的发展前景。最后对IGBT串联均压方法进行了展望。     

3种高电流密度离子膜电解槽的性能对比与介绍

目前离子膜电解槽的发展方向为复极、自然循环、高电流密度、低电耗，伍德诺拉公司BM2．7-Ⅲ型槽、美国西方化学公司ExL^B-65槽、日本氯工程公司BiTAC-858槽即具有这些先进性能。对这3种槽进行了介绍与对比。