Development of Ferroelectric Ceramics with High Dielectric Constant and Low Dissipation Factor for High-Voltage Capacitors

Both ferroelectric BaTiO₃-based and SrTiO₃-based dielectric ceramics with high dielectric constant and low dissipation factor have been successfully developed, and applied into mass production for high-voltage ceramic capacitors. Crystalline phases of the ceramics were identified by XRD. STEM study of the ceramics was also conducted. Based on the computer simulation of a shell-core and two-phase mixed structural model proposed, a novel processing method was employed to produce SrTiO₃-based ceramics with the following satisfactory dielectric properties: dielectric constant at room temperature _20C=2000, dissipation factor at room temperature D _20C=0.003, temperature coefficient of dielectric constant = –8% (–25°C to 85°C), and, breakdown electric field E _b=10kV/mm(dc). Optional composition of BaTiO₃-based ceramics has been obtained through the orthogonal design experimentation: BaTiO₃-xBaZrO₃-yBaSnO₃, where x = 8wt% and y = 6wt%, with minor additions of MnSiO₃, WO₃, CeO₂, Bi₂(SnO₃)₃ and ZnO. Its major properties are as follows: Curie temperature T _c = 21°C, _20C=18,000, D _20'C = 0.008, =–80% (–25°C+85°C) and E _b = 8kV/mm (dc).     

新型微波介质陶瓷材料与元件的研制

报告本课题组承担的863计划项目“新型微波介质陶瓷材料与元件的研制”，在实验工作中不仅采用传统的固相反应法而且利用共沉淀和水热合成等溶液反应技术，还采用凝胶浇注成型复杂形状的微波陶瓷元件，并利用流延成型技术制备大尺寸微波集成陶瓷基板等；研制成功具有高电容率和品质因子并接近于零的谐振频率温度系数的系列化微波介质陶瓷；开发成功多种微波介质元器件，包括：介质谐振器、介质滤波器、GPS片式天线、微波电容器、通信电缆滤波接头和微波集成基板等。     

High pass filter with above IC integrated SrTiO3 high K MIM capacitors

This paper describes realization and characterization of SrTiO₃ (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors in order to realize a high pass filter. Surface capacitance achieved is 10 nF/mm² with capacitance value of 1.2 nF. The process for STO MIM fabrication does not exceed 400 °C, which is compatible with interconnections. Typical K and dielectric losses values obtained are, respectively 110% and 2%. Yield obtained reaches 83% for capacitors. A functional high pass filter using these STO capacitors was realized in this study. It exhibits a cut-off frequency at 6.5 kHz and a constant gain at higher frequencies of −1.3 dB.     

并网风电机组补偿电容器投入过程研究

对风电场并联电容器的投入过程进行了仿真研究。着重研究了投入电容器时的高频涌流及过渡电压降低的现象并提出了有效的改善措施。     

Characterization of ferroresonant modes in HV substation with CB grading capacitors

This paper reports a ferroresonant experience involving inductive voltage transformers (VT's) in a 400 kV substation equipped with circuit breaker grading capacitors. Field measurements are presented and compared with ATP/EMTP simulation results, showing very good agreement. A parametric analysis has been performed to investigate the effect of the substation capacitance on the occurrence of ferroresonance. Fundamental frequency and sub-harmonic ferroresonant modes have been identified and compiled in a bifurcation diagram. The methodology presented can be used to create risk maps of avoidable switching operations or substation configurations.     

Synthesis and properties of manganese-doped barium titanate

An oxalate route for the production of BaTiO₃ has been modified to incorporate Mn (upto 2%) as a dopant and the reaction sequence has been studied. The resulting Mn-doped BaTiO₃ exhibits a dielectric constant with an increasing insensitivity to temperature and applied a.c. field as the Mn content is increased. These samples possess a high electrical resistivity even after treatment in hydrogen at 1100°C and are therefore suitable as dielectric for multilayer capacitors with base metal electrodes.     

Al2O3 deposited by the oxidation of trimethylaluminum as gate insulators in hydrogen sensors

It is known that stable hydrogen sensors can be made with palladium-aluminum oxidesilicon dioxide-silicon (PdMAOS) structures. An improved way of making thin aluminum oxide films on silicon dioxide is presented. It is based on the oxidation of trimethylaluminum in an argon/oxygen atmosphere at 300–400° C. The optical and electrical properties of Al₂O₃ films made with this metal-organic chemical vapor deposition (MOCVD) method are presented. Finally the properties of completed PdMAOS hydrogen sensors are briefly presented.     

Cycle stability of birnessite manganese dioxide for electrochemical capacitors

A combination of step potential electrochemical spectroscopy (SPECS) and electrochemical impedance spectroscopy (EIS) has been used to examine the electrochemical cycling behaviour of a well-characterized birnessite-phase manganese dioxide sample for use in electrochemical capacitors. The resistance and interfacial properties of the macroscopic electrode were found to be irreversible with cycling. However, the corresponding properties for the individual particles were more reversible, although they did show substantial hysteresis in their behaviour during cycling. This behaviour was discussed in terms of the structural, conductivity and morphological characteristics of the birnessite at different depths of discharge.     

The variation of the dielectric constant and loss index with temperature and draw ratio in α‐PVDF

In this study, the effect of measurement temperature and uniaxial drawing on the real (dielectric constant, ε′) and imaginary (loss index, ε″) parts of the complex dielectric constant of α‐crystalline phase poly(vinylidene fluoride) (PVDF) was investigated. The samples having different draw ratios (λ) were obtained by drawing the PVDF film at constant speed and temperature. The dielectric measurements were performed in the frequency range of 100 Hz–1 MHz and in the temperature range of 80–400 K. Although ε′ and ε″ were not affected by the orientation process during the β‐relaxation transition, it was observed that there were systematical variations for the α‐relaxation transition. ε′ and ε″ showed different behaviors depending on the draw ratio at different temperatures. Especially, ε″ was more affected by the orientation process at 380 K. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

Cathodic deposition and characterization of tin oxide coatings on graphite for electrochemical supercapacitors

Amorphous tin oxide (SnO_x) was cathodically deposited onto graphite electrode in a bath containing 0.1 M stannous chloride (SnCl₂), 0.5 M sodium nitrate (NaNO₃), and 0.4 M nitric acid (HNO₃) in an aqueous solution of 50% (v/v) ethanol. The SnO_x coatings grown on graphite were characterized as typical capacitive behaviors by cyclic voltammetry (CV), chronopotentiometric (CP) in 0.5 M KCl. Specific capacitance (in milli-farad per square centimeter, C_a) changes linearly with the deposition charge up to 4.5 C cm⁻², and a maximum of as high as 355 mF cm⁻² was obtained with the SnO_x coating grown at around 5 C cm⁻². For the SnO_x coating deposited at 0.2 C cm⁻², a maximum specific capacitance (in farad per gram, C_m) of 298 and 125 F g⁻¹ was achieved from CVs at a scan rate of 10, and 200 mV s⁻¹, respectively. The value of C_m significantly gets lower from 265 to around 95 F g⁻¹ when the deposition charge increases from 0.2 to around 6.0 C cm⁻². The long cycle-life and stability of the SnO_x coatings on graphite via the presented cathodic deposition were also demonstrated.